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1. 发明专利

JPH10256137A ELECTRON BEAM EXPOSURE MASK WITH HOLDER 失效
公开(公告)号：JPH10256137A
公开(公告)日：1998-09-25
申请号：JP6101097
申请日：1997-03-14
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE
IPC分类号： G03F1/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide an electron beam exposure mask with a holder so as to ground electrons irradiating portions other than an opening pattern of the electron beam exposure mask via the holder, and precisely align the electron beam exposure mask with the holder. SOLUTION: An electron beam exposure mask 100 consisting of an opening pattern 104 and a support frame portion 101 is formed using a silicon wafer bonded together, and an indium metal foil approximately 50 microns thick ×200 microns wide is placed on the top surface of a holder 21 with positioning pins 25 made separately to set the electron beam exposure mask 100, and the electron beam exposure mask 100 is aligned by the positioning pins 25. Furthermore, an indium foil is filled between the side surfaces of the electron beam exposure mask 100 and the holder 21, and the holder 21 is then placed in a glass chamber to interchange the air with nitrogen gas, heated up to 180 degrees and cooled down, thereby bonding layers 23 and 24 are formed to obtain an electron beam exposure mask with a holder.

2. 发明专利

JPH06252035A MANUFACTURE OF X-RAY MASK 失效
公开(公告)号：JPH06252035A
公开(公告)日：1994-09-09
申请号：JP3325493
申请日：1993-02-23
申请人： TOPPAN PRINTING CO LTD
发明人： OKUBO KINJI , MATSUO TADASHI , UEYAMA KOUSUKE
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To provide an X ray mask for a microgap by a method comprising the steps of dry-etching the pripheral part of the front for microgap formation and the window portion of the back for back-etching simultaneously and back- etching an X-ray mask where an X-ray transmission film is formed on the surface. CONSTITUTION:A silicon nitride X-ray transmission films 2, to serve as X-ray transmission films are formed on both sides of a silicon wafer 1 by a low- pressure CVD method. Photoresist of 12mum thickness are formed on the X-ray transmission films on both surfaces of the water. A back-etching window resist pattern corresponding to the front-surface pattern formation part is formed on the back side. On the front side is formed a pattern such that only the peripheral part of the resist for microgap formation is removed. After the removal of the resist, the wafer is placed in a barrel type plasma etching device, where only SiNx and Si on both sides are etched by a thickness of 11mum and a pattern 4 for microgap and a back etching window pattern 5 are formed.

3. 发明专利

JPH06120124A MASK FOR X-RAY EXPOSURE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06120124A
公开(公告)日：1994-04-28
申请号：JP26845092
申请日：1992-10-07
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , MATSUO TADASHI , OKUBO KINJI , FUKUHARA NOBUHIKO
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To obtain a high quality X-ray mask and its manufacture wherein the parallelism of an X-ray mask with a reinforcing frame is high, the warp due to the strain caused by bonding is restrained, and flatness is high, and to make it possible for the X-ray mask to exhibit excellent performance when it is practically used as an original sheet for replication. CONSTITUTION:Penetrating holes 10 are formed in a reinforcing frame 5 or a mask substrate 1 for X-ray exposure. The frame 5 and the mask substrate 1 are mutually linked on a bonding surface, and the sectional area is wide on the bonding surface. In other case, a trench 9 having a part protruding outside from the region where the mask substrate 1 is arranged is formed in the sticking surface of the reinforcing frame 5, and the frame 5 and the mask substrate 1 are mutually linked on the bonding surface. At the time of bonding, adhesive agent is injected from the penetrating holes 10 or the trench 9.

4. 发明专利

JPH05113656A PHASE SHIFT MASK AND PRODUCTION THEREOF AND BLANK FOR PHASE SHIFT MASK TO BE USED THEREIN 失效
公开(公告)号：JPH05113656A
公开(公告)日：1993-05-07
申请号：JP27548091
申请日：1991-10-23
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To decrease the fluctuations in the thicknesses of phase shifter layer patterns so that a phase shift effect can be utilized to the max. possible extent and overlap photolithographing is well executed by forming conductive layers and an etching stopper layer. CONSTITUTION:The films of the etching stopper layer 2, conductive layers 3, phase shifter layers 4 and light shielding layers 5 are first formed. The etching stopper layer 2 at the time of forming the phase shifter layer patterns for applying a phase difference is provided and the conductive layers 3 for preventing the charge-up at the time of electron beam lithographing is provided. The etching stopper layer 2 is provided to stop the etching of the phase shifter layers 4 so as not to etch a substrate 1 and is required to have high transparency and to enable taking of a sufficient selection ratio with SiO2 at the time of etching of the phase shifter layers 4. The conductive layers 3 are required to have sufficient transmittability of light at the time of using the phase shift mask and, therefore, a metallic thin film, org. conductive material, etc., are preferably used for these layers.

5. 发明专利

JPH05113655A PRODUCTION OF PHASE SHIFT MASK AND BLANK FOR PHASE SHIFT MASK 失效
公开(公告)号：JPH05113655A
公开(公告)日：1993-05-07
申请号：JP27547991
申请日：1991-10-23
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027
摘要： PURPOSE:To decrease the fluctuations in the thicknesses of phase shifter layer patterns so that a phase shift effect can be utilized to the max. possible extent and overlap photolithographing is well executed by forming conductive layers and an etching stopper layer. CONSTITUTION:The etching stopper layer 2 at the time of forming the phase shifter layer patterns for applying a phase difference is provided and the conductive layer 6 for preventing the charge-up at the time of electron beam lithographing is provided in the case of production of the phase shift mask for applying the phase difference to the illuminating light transmitted through apertures. The etching stopper layer 2 is provided to stop the etching of the phase shifter layers 3 so as not to etch a substrate 1 and is required to have high transparency and to enable taking of a sufficient selection ratio with SiO2 at the time of etching of the phase shifter layers 3. The conductive layers 6 are merely required to have the electrical conductivity for preventing charge-up at the time of the overlap plotting by electron beams. A metallic thin film, org. conductive material, etc., are usable for this layer.

6. 发明专利

JPH0580490A PHASE SHIFT MASK AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0580490A
公开(公告)日：1993-04-02
申请号：JP24080391
申请日：1991-09-20
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , FUKUSHIMA YUICHI , KONISHI TOSHIO
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027
摘要： PURPOSE:To stably produce the phase shift mask which is formed to allow the end point of the dry etching of shifters to be easily obtd., prevents charge-up in a stage for electron beam plotting, consequently decreases the fluctuations in the thickness of the shifters, can utilize the effect of shifting the phases to the max. extent and is good in overlap plotting. CONSTITUTION:The phase shift mask successively formed with light shielding layer patterns 2, a conductive layer 3, an etching stopper layer 4, and phase shifter layer patterns 5 on a substrate 1 is produced by the production process having a stage for successively providing the conductive layer 3, the etching stopper layer 4, the shifter layer 5, and a resist on the substrate 1 formed with the light shielding layer patterns, a stage for drying etching the shifter layer 5 after forming resist patterns and a stage for peeling the resist patterns.

7. 发明专利

JPS62180377A LITHOGRAPHIC PLATE 失效
公开(公告)号：JPS62180377A
公开(公告)日：1987-08-07
申请号：JP2309386
申请日：1986-02-05
申请人： TOPPAN PRINTING CO LTD
发明人： TAGUCHI TAKAO , KUMAGAI KOJI , UEYAMA KOUSUKE , HAMADA NOBUHIRO , INABA YOSHIMI
IPC分类号： B41N1/14 , G03G13/28
摘要： PURPOSE:To eliminate fogging at a non-image part and to improve brush resistance and eliminate the need for water to wet by forming the no-image part on an organic photoconductor layer by using a developer consisting principally of a (meth)acrylate polymer or copolymer which contains fluorine atoms. CONSTITUTION:A lithographic plate 1 consists of a conductive substrate 2, an organic photoconductor layer 3, an image part 4, and the no-image part 5. The no-image part 5 consists of the developer consisting principally of the polymer or copolymer of (meth)acrylate containing fluorine atoms. An original plate provided with the organic photoconductor 3 on the conductive substrate 2 is corona-discharged in darkness, image exposure is carried out by scanning semiconductor laser light, etc., and toner development and heat fixation are performed. Consequently, no developer sticks on the exposed part to form an image part 4 and the developer sticks on the unexposed part to form the no- image part 5. Thus, ink sticks on the organic photoconductor layer without any wetting water and does not stick on the no-image part at all to obtain a print of high quality.

8. 发明专利

JPH10301499A BLANKS OR BLACK MATRIX AND THEIR PRODUCTION 失效
公开(公告)号：JPH10301499A
公开(公告)日：1998-11-13
申请号：JP10491897
申请日：1997-04-22
申请人： ULVAC SEIMAKU KK , TOPPAN PRINTING CO LTD
发明人： HONDA SATOSHI , SASAKI TAKAHIDE , TOKU AKIHIKO , TANAKA KEIJI , UEYAMA KOUSUKE
IPC分类号： G02F1/1335 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To provide a black matrix which less affects the environment, has chemical resistance and heat resistance, allow the pattern formation by a conventional Cr wet etching soln., provides excellent productivity and has high light shieldability and excellent low reflectiveness. SOLUTION: The light shielding films 2 or antireflection films 3a, 3b of the black matrix consisting of the light shielding films 2 or the light shielding films 2 and antireflection films 3a, 3b formed in direct or indirect adhesion onto the surface of a transparent substrate 1 are formed as thin films consisting of essentially metal components of Mo and Ni. The transparent substrate 1 is installed in a vacuum chamber and the light shielding films 2 are formed thereon by a sputtering method by using a sputter target consisting of the Mo and Ni as the essential components of the metallic components and using a gaseous mixture formed by adding gaseous Ar to an atmosphere gas or adding at least one reactive gas among O2 , N2 , NO, CO2 and CH4 to this gaseous Ar.

9. 发明专利

JPH06120204A BACK ETCHING EQUIPMENT 失效
公开(公告)号：JPH06120204A
公开(公告)日：1994-04-28
申请号：JP26844992
申请日：1992-10-07
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUHARA NOBUHIKO , MATSUO TADASHI , UEYAMA KOUSUKE
IPC分类号： G03F1/22 , H01L21/027 , H01L21/306 , G03F1/16
摘要： PURPOSE:To prevent etching of a part not requiring corrosion even when etching solution leaks, and enable stable back etching, by installing liquid-stopping packings double on the inside and the outside, and installing a vacuum trap linked with the space between the packings and a vacuum pump. CONSTITUTION:Material part constituting the other surface side of a substratum 8a on which a thin film is formed is etched and eliminated, and a membrane retained by the substratum 8a is formed. In this back etching equipment, packings 7 which are interposed at least at the part where the surface to be etched of the substratum 8a is fixed to a penetrating aperture part 5 of an etching liquid reservoir 1 are installed double on the inside and the outside. A space constituted of the part between the packings 7 and a pressure reducing groove 6 arranged around the aperture part 5 is formed. A vacuum trap 3 for leak etching liquid and a vacuum pump 4 are installed which trap is linked with the space. For example, the substratum 8a is an X-ray mask intermediate.

10. 发明专利

JPH06112189A BACK-ETCHING APPARATUS 失效
公开(公告)号：JPH06112189A
公开(公告)日：1994-04-22
申请号：JP25634692
申请日：1992-09-25
申请人： TOPPAN PRINTING CO LTD
发明人： UEYAMA KOUSUKE , MATSUO TADASHI , OKUBO KINJI , FUKUHARA NOBUHIKO
IPC分类号： G03F1/22 , H01L21/027 , H01L21/306 , G03F1/16
摘要： PURPOSE:To form a membrane easily and stably by holding a back-etching inner reservoir filled with etching solution with at least a part of it being soaked in a liquid. temperature maintaining outer reservoir filled with medium for maintaining liquid temperature. CONSTITUTION:A back-etching inner reservoir 7 is soaked into temperature maintaining solution 17 in a liquid temperature maintaining outer reservoir 9. The liquid temperature of etching solution 18 is maintained so that etching may not be inhomogeneous in a plane to perform stable etching. The temperature maintaining solution 17 is put into the liquid temperature maintaining outer reservoir 9 to an approximately same height as the etching solution, so that pressures of the etching solution 18 and the temperature maintaining solution 17 are approximately balanced at a part of a leakage preventing packing 5. Thus leakage of the etching solution 18 is reduced, and leakage solution if any may diffuse into the temperature maintaining solution 17 to give little influence to a pattern face 4. Thus homogeneity in etching speed can be maintained, thereby preventing a problem such as breakage of a membrane.

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