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1. 发明专利

JPS62299309A METHOD FOR MOLDING LAMINATED COMPOSITE BODY 失效
公开(公告)号：JPS62299309A
公开(公告)日：1987-12-26
申请号：JP14376286
申请日：1986-06-19
申请人： TAKAI OSAMU , FURUYA MOTOHIRO
发明人： TAKAI OSAMU , FURUYA MOTOHIRO
IPC分类号： B29C35/02 , B29C70/06 , B29K101/10 , B29L9/00 , B29L11/00
摘要： PURPOSE:To mold a laminated composite body simply and certainly, by heating the laminated composite body by a heating body, which is arranged along the surface of the laminated composite body which is processed into a predetermined shape so as to be contacted with said surface, to solidify the same. CONSTITUTION:A core material is held between skin materials impregnated with a thermosetting resin material from both sides thereof in a sandwich state, and the whole is fixed by adhesive material layers to form a laminated composite body 11, which is formed into a predetermined shape by bending processing. Subsequently, heat generators 12 are arranged along the outer surface of the composite body so as to be contacted therewith and a current is supplied to the heat generators 12 to enter a heating process. By this method, the laminated composite body 11 is cured under heating to be solidified into the predetermined shape. After molding is completed, the heat generators 12 are detached to take out a product. As each of the heat generators 12, a plane heat generator or a ribbon heater is used. Therefore, the molding of the laminated composite body can be simply and certainly performed by small-sized heat generators and a molded product having a shape of various kind can be prepared in an extremely economical and excellent state without irregularity by heating.

2. 发明专利

JPH1096083A FORMATION OF SILICON OXIDE-BASED FILM 失效
公开(公告)号：JPH1096083A
公开(公告)日：1998-04-14
申请号：JP25017896
申请日：1996-09-20
申请人： TAKAI OSAMU
发明人： TAKAI OSAMU , HOZUMI ATSUSHI
IPC分类号： C01B33/12 , B01J19/08 , B01J19/12 , C23C16/48 , C23C16/50
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide-based film contg. silicon and oxygen with a high purity and excellent in penetrability, wear resistance, heat resistance, corrosion resistance and electrical insulating property at a low temp. and at a high film-forming speed. SOLUTION: As for the method for forming a silicon oxide-based film, an organic silicon compound contg. oxygen is brought into chemical reaction in vapor phases by using low temp. plasma, and the reactant obtd. by the chemical reaction is deposited on a substrate to form the coating contg. oxygen and silicon. In this case, by this method for forming the silicon oxide-based film, excellent characteristics can be imparted to a substrate low in wear resistance, heat resistance, corrosion resistance, insulating properties or the like. Furthermore, since the low temp. formation of the coating is made possible, even in the case a substrate low in heat resistance is used, the denaturation of the quality caused by heat is not generated. Moreover, since the film-forming speed can be increased, the formation is made possible in a short time.

3. 发明专利

JP2001324816A PATTERN FORMING METHOD AND EXPOSURE DEVICE 失效
公开(公告)号：JP2001324816A
公开(公告)日：2001-11-22
申请号：JP2000143485
申请日：2000-05-16
申请人： NIKON CORP , SUGIMURA HIROYUKI , TAKAI OSAMU
发明人： SUGIMURA HIROYUKI , TAKAI OSAMU , NAKAGIRI NOBUYUKI
IPC分类号： G01N1/10 , B81C1/00 , C12M1/00 , C12N15/09 , G01N35/00 , G01N37/00 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a method capable of rapidly forming patterns without damaging organic molecules. SOLUTION: The vacuum UV light from an excimer lamp 1 transmits a quartz window 3a transparent to the vacuum UV light and arrives at a mask 5 through a cavity part A. Since the cavity part A is filled with nitrogen, the vacuum UV light is hardly absorbed and arrives at the mask 5. The light transmitted through the mask irradiates a substrate 6 on which an organic molecular film is formed and excites the oxygen in the air existing between the mask 5 and the substrate 6, thereby generating oxygen atom radicals. The oxygen atom radicals react with the carbon and hydrogen of the organic molecules of the substrate 6 and change these to CO2 and H2O. The organic monomolecular film 7 of the segment irradiated with the vacuum UV light in the manner described above is decomposed to gas which is then exhausted and therefore nothing remains after etching and there is no need for cleaning in later process steps.

4. 发明专利

JP2002210406A COATING PRE-TREATING METHOD, COATING METHOD, COATING PRE- TREATED MATERIAL TO BE COATED, AND COATING FILM FORMING MATERIAL TO BE COATED 失效
公开(公告)号：JP2002210406A
公开(公告)日：2002-07-30
申请号：JP2001008267
申请日：2001-01-16
申请人： NIPPON PAINT CO LTD , SUGIMURA HIROYUKI , TAKAI OSAMU
发明人： YOMOGIHARA MASANOBU , SUGIMURA HIROYUKI , TAKAI OSAMU
IPC分类号： B05D3/10 , B05D7/24
摘要： PROBLEM TO BE SOLVED: To provide a coating pre-treating method unnecessary for water liquid treatment, excellent in sanitary aspect and environmental aspect and exhibiting excellent adhesiveness, a coating method, a coating pre-treated material to be coated and a coating film forming material to be coated. SOLUTION: A molecular film is deposited on the surface of a material to be coated by the CVD method using an organosilane having at least one functional group of mercapto group and amino group as a gaseous starting material. At this time an oxane bond is formed by the reaction with OH group on the surface of the material to be coated and a SAM(Self Assembled Monolayer) is formed by the two-dimensional progress of the adsorption of the organosilane by the reaction with adsorbed water. When a coating film composed of an epoxy coating material or a polyurethane coating material is formed on the SAM, the functional group of the SAM and the functional group of the coating material react with each other to chemically bond.

5. 发明专利

JPH10130844A WATER-REPELLENT SILICON OXIDE FILM, PRODUCTION OF WATER-REPELLENT SILICON OXIDE FILM AND HARD WATER-REPELLENT SILICON OXIDE FILM 失效
公开(公告)号：JPH10130844A
公开(公告)日：1998-05-19
申请号：JP6876697
申请日：1997-03-21
申请人： TAKAI OSAMU
发明人： TAKAI OSAMU , HOZUMI ATSUSHI
IPC分类号： C23C16/42 , C23C16/50 , C23C16/511
摘要： PROBLEM TO BE SOLVED: To provide a method for easily forming a water-repellent silicon oxide film at a low temp. and with good adhesion to a base material. SOLUTION: This film consists of a silicon-contg. decomposition product formed by decomposing a silicon compd. in a gaseous phase and a fluorine-contg. reaction product formed by decomposing a fluorine compd. in a gaseous phase and contains silicon oxide and the fluorine and carbon bonded to each other. The water-repellent silicon oxide film is produced as follows. Namely, the gases of the silicon compd. and fluorine compd. at least one of which contains oxygen and at least one of which contains carbon are prepared and used as the raw gases, the silicon compd. and fluorine compd. contained in the raw gases are decomposed in a gaseous phase, and the decomposition product is deposited on the substrate to form a film. The hard water-repellent silicon oxide film consists of a water-repellent layer having the same composition as the water-repellent silicon oxide film and a hard layer consisting of a silicon oxide-base compd.

6. 发明专利

JPH1053496A COMPOSITE SEMICONDUCTOR, COMPOSITE SEMICONDUCTOR THIN FILM AND PRODUCTION OF COMPOSITE SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH1053496A
公开(公告)日：1998-02-24
申请号：JP21149496
申请日：1996-08-09
申请人： TAKAI OSAMU
发明人： TAKAI OSAMU
IPC分类号： C30B29/38 , C23C14/06 , C23C14/32 , C23C14/34 , C30B29/40 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To obtain a composite semiconductor and a composite semiconductor thin film utilizable as a material for optical function element in visible and near infrared region and to provide a process for the production of the composite semiconductor thin film. SOLUTION: This composite semiconductor is composed of indium (In), zinc (Zn) and nitrogen and has an Eg of 1.23-1.95eV. This composite semiconductor thin film is composed of a composite semiconductor composed of In, Zn and nitrogen and having an Eg of 1.23-1.95eV. This process for the production of the composite semiconductor thin film comprises the use of a plasma containing at least nitrogen, the evaporation of In and Zn from an evaporation source containing at least In and Zn or the evaporation of In and Zn respectively from an evaporation source containing at least In and an evaporation source containing at least Zn and the deposition of the evaporated In and Zn together with nitrogen in the plasma on a matrix to form the objective composite semiconductor thin film.

7. 发明专利

JP2002299339A SILICON NITRIDE FILM MANUFACTURING METHOD 失效
公开(公告)号：JP2002299339A
公开(公告)日：2002-10-11
申请号：JP2001134661
申请日：2001-03-27
申请人： TAKAI OSAMU , DAINIPPON PRINTING CO LTD
发明人： TAKAI OSAMU , SUGIMURA HIROYUKI , INOUE YASUSHI , TEJIMA KATSUYA
IPC分类号： B32B9/00 , C23C16/42 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film manufacturing method for manufacturing a silicon nitride film containing very little impurities, even if the film is formed at low temperatures by the plasma-enhanced CVD method. SOLUTION: The silicon nitride film manufacturing method uses a material gas containing at least an organic silicon gas and an oxygen atom-containing gas for forming the silicon oxide film on a base in a reaction chamber by the plasma-enhanced CVD method. The base is located apart from the plasma center, as far as forming a silicon nitride film on the base surface and the base surface temperature is controlled to be higher than the inner wall temperature of the reaction chamber for forming the film.

8. 发明专利

JPH1025565A PRODUCTION OF HEAD THIN FILM AND HARD THIN FILM 失效
公开(公告)号：JPH1025565A
公开(公告)日：1998-01-27
申请号：JP18364496
申请日：1996-07-12
申请人： TAKAI OSAMU
发明人： TAKAI OSAMU , TAKI YUSUKE , KITAGAWA TOSHIHISA
IPC分类号： C01B31/02 , C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a method for producing hard thin film having high hardness and utilizable as a hard material and a superhard material at a high speed and at a low cost and to provide the hard thin film having high hardness. SOLUTION: As for the method for producing hard thin film, a cathode incorporated with a carbon source at least contg. carbon and a base metal are used, and hard thin coating is produced by an arc ion plating method. In this case, negative bias voltage is applied to the base metal to regulate the base metal to the negative potential, and the space between the cathode and base metal is provided with a protective body preventing molten carbon grains having >=0.1μm grain diameter among the carbon evaporated from the carbon source from depositing on the base metal. By this producing method, the hard thin film having high hardness can be produced, and this thin film is excellent as a hard material and a superhard material.

9. 发明专利

JP2000222945A LOW INTERFACE REFLECTION CONDUCTIVE FILM 失效
公开(公告)号：JP2000222945A
公开(公告)日：2000-08-11
申请号：JP1951999
申请日：1999-01-28
申请人： NIPPON PAINT CO LTD , TAKAI OSAMU
发明人： YOMOGIHARA MASANOBU , TAKAI OSAMU , SUGIMURA HIROYUKI , UNO HITOSHI
IPC分类号： G06F3/041 , B32B7/02 , B32B9/00 , G06F3/033 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To provide a material having excellent interference reflecting characteristics in a low interface reflection conductive film. SOLUTION: The low interface reflection conductive film comprises an intermediate film formed on a substrate having a refractive index ns and a transparent conductive film formed thereon, and the transparent conductive film having a refractive index n1 and the intermediate film having a refractive index n2 are formed so as to satisfy a relation of ns

10. 发明专利

JPH11263860A WATER REPELLENT SILICON OXIDE FILM 失效
公开(公告)号：JPH11263860A
公开(公告)日：1999-09-28
申请号：JP6590298
申请日：1998-03-16
申请人： TAKAI OSAMU
发明人： TAKAI OSAMU , KONDO TAKAHIRO , SUGIMURA HIROYUKI
IPC分类号： C08J7/04 , C08J7/00 , C08J7/06 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a silicon oxide film which is formed at nearly an ordinary temperature, does not contain fluorine, has a good transparency and has a high water repellency. SOLUTION: This film is formed by building up a reaction product, which is prepared using a low temperature plasma using an organosilicon compound gas, on the surface of a substrate, mainly comprises silicon oxide and has a surface form wherein the maximum level difference of irregularity is within the range of 50 to 330 nm and the value of the average-square surface roughness is within the range of 8 to 45 nm The organosilicon compound is an organosilane which is free of fluorine, and the organosilane is preferably at least one of tetramethylsilane, trimethylmethoxysilane, dimethyldimethoxysilane, hexamethyldisilane or hexamethyldisiloxane.

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