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1. 发明专利

JP2012068536A Heat-resistant light-shielding film and production method of the same, and diaphragm and diaphragm device for controlling light quantity using the heat-resistant light-shielding film 审中-公开
标题翻译：耐热遮光膜及其制造方法，以及使用耐热遮光膜控制光量的膜片和膜片装置
公开(公告)号：JP2012068536A
公开(公告)日：2012-04-05
申请号：JP2010214469
申请日：2010-09-24
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OKUBO KAZUHIKO , ONO KATSUSHI
IPC分类号： G03B9/02
摘要： PROBLEM TO BE SOLVED: To provide a light-shielding film having a fine rugged structure on the surface thereof and excellent heat resistance, to be used as a diaphragm vane for controlling the light quantity of a liquid crystal projector, the diaphragm vane exposed to high temperature of 200°C or higher, or as a shutter vane or a fixed diaphragm of a digital camera exposed to high temperature during processing.SOLUTION: The heat-resistant light-shielding film includes a laminated film comprising a light-shielding film (B) having a film thickness of 50 nm or more formed on a resin film substrate (A) having heat resistance at a temperature of 200°C or higher, by surface treating the surface of the resin film substrate by plasma treatment or ion irradiation treatment and then sputtering, and a metal oxide film (C) with low reflectivity formed by sputtering on the light-shielding film (B). The surface roughness of the surface of the resin film substrate (A) subjected to the surface treatment is, in terms of an arithmetic average height Ra, of 0.2 to 0.8 μm; and the surface roughness of the laminated film, in terms of the arithmetic average height Ra, of 0.1 to 0.7 μm.
摘要翻译：要解决的问题：为了提供一种在其表面上具有微细凹凸结构并具有优异耐热性的遮光膜，用作用于控制液晶投影仪的光量的隔膜叶片，该隔膜叶片暴露于200℃或更高的高温下，或作为处理期间暴露于高温的数码相机的快门叶片或固定振膜。解决方案：耐热遮光膜包括层压膜，其包含在具有耐热性的树脂膜基材（A）上形成的膜厚度为50nm以上的遮光膜（B）通过等离子体处理或离子照射处理然后溅射对树脂膜基板的表面进行表面处理，然后通过溅射在遮光膜（B）上形成具有低反射率的金属氧化物膜（C），其温度为200℃以上）。经表面处理的树脂膜基材（A）的表面的表面粗糙度为算术平均高度Ra 0.2〜0.8μm，并且在算术平均高度Ra方面，层压膜的表面粗糙度为0.1〜0.7μm。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010024474A Method for producing indium target 有权
标题翻译：生产目标的方法
公开(公告)号：JP2010024474A
公开(公告)日：2010-02-04
申请号：JP2008184351
申请日：2008-07-16
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ONO KATSUSHI , MORIMOTO TOSHIO
IPC分类号： C23C14/34 , C22C28/00
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive method for producing an indium target, which makes less indium oxide enter into an inner layer of a hot metal, and is suitable particularly for use in forming an indium film which is a light absorption layer formed of a stacked Cu-Ga/In precursor for a thin-film solar cell.
SOLUTION: In a process of producing the indium target by charging a raw indium material having a predetermined purity of 99.99% or more and an oxygen content of 0.001 wt.% or less into a mold which is mounted on a heating device and has been heated, so as to melt the charged indium material, removing floating indium oxide on the surface, cooling the material to form an ingot, and grinding the surface of the obtained ingot, this production method includes: charging a predetermined amount of the raw indium material into the mold through several divided times instead of charging the material at a time; removing formed indium oxide on the surface of the hot metal, each time; and then grinding the surface of the ingot which has been obtained by cooling the hot metal. The form of the raw material to be used may be any of an ingot, a ribbon shape and a powder.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种廉价的制造铟靶的方法，其使较少的氧化铟进入到铁水的内层中，并且特别适用于形成作为光吸收的铟膜由用于薄膜太阳能电池的堆叠的Cu-Ga / In前体形成的层。解决方案：在通过将预定纯度为99.99％以上且氧含量为0.001重量％以下的原料铟材料装入安装在加热装置上的模具中来制造铟靶的方法中，已经被加热，以便熔化带电的铟材料，去除表面上的漂浮的氧化铟，冷却材料以形成锭，并研磨所得锭的表面，该制造方法包括：将预定量的原料铟材料通过几次分开进入模具，而不是一次对材料充电; 每次在铁水表面去除形成的氧化铟; 然后研磨通过冷却热金属而获得的锭的表面。所使用的原料的形状可以是锭，带状，粉末中的任意一种。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2005163129A Ni-Cr-Si ALLOY BASED AND Ni-Cr-Si-Cu ALLOY BASED ELECTRODE FILM, AND SPUTTERING TARGET 审中-公开
标题翻译：基于Ni-Cr-Si合金和Ni-Cr-Si-Cu合金的电极膜和溅射靶
公开(公告)号：JP2005163129A
公开(公告)日：2005-06-23
申请号：JP2003405403
申请日：2003-12-04
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： WATANABE HIROYUKI , ENBOKU MASAKAZU , SUGIHARA MASAHIRO , ONO KATSUSHI
IPC分类号： C23C14/34 , C22C19/05
摘要： PROBLEM TO BE SOLVED: To provide an electrode film in which, compared with the conventional Ni-40 to 50 mass%Cr alloy film formed as a first layer in an internal electrode and the conventional Cr film formed as a first layer in an external electrode, electrical conductivity and adhesive strength are equal or more excellent, and the relaxation of the environmental problem caused by Cr is considered, and to provide a sputtering target used for forming the electrode film, and having excellent magnetic properties.
SOLUTION: An Ni-Cr-Si alloy having a composition comprising, by mass, 1 to 20% Cr and 1 to 10% Si, and the balance Ni, or is an Ni-Cr-Si-Cu alloy having a composition comprising 1 to 20% Cr, 1 to 10% Si and 1 to 10% Cu, and the balance Ni. Further, the saturation magnetization 4πI thereof is preferably controlled to ≤200 G.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电极膜，其中，与在内部电极中形成为第一层的常规Ni-40至50质量％的Cr合金膜和作为第一层形成的常规Cr膜相比，外部电极，导电性和粘合强度等同或更优异，并且考虑由Cr引起的环境问题的松弛，并且提供用于形成电极膜的溅射靶，并具有优异的磁性能。解决方案：一种Ni-Cr-Si合金，其组成包括质量为1至20％的Cr和1至10％的Si，余量为Ni，或者是具有组成包含1至20％的Cr，1至10％的Si和1至10％的Cu，余量为Ni。此外，其饱和磁化强度4πI优选控制在≤200G。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2014153522A Light-shielding film and production method of the same, and diaphragm, shutter blade and light quantity controlling diaphragm blade using the same 有权
标题翻译：其遮光膜及其制造方法及其相关的膜片，切片刀片和光控量控制片状叶片
公开(公告)号：JP2014153522A
公开(公告)日：2014-08-25
申请号：JP2013022958
申请日：2013-02-08
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ONO KATSUSHI
IPC分类号： G03B9/02 , G02B5/00 , G03B9/10
摘要： PROBLEM TO BE SOLVED: To provide a light-shielding film and a production method of the film excellent in light-shielding property, low reflection property, sliding property, conductivity, heat resistance and resistance to high temperature and high humidity, to be used for optical apparatus components such as a diaphragm, a shutter blade or a diaphragm blade of a mobile phone with a camera, a digital camera or a lens shutter of a digital video camera, or a light quantity controlling diaphragm blade of a projector.SOLUTION: The light-shielding film comprises: a resin film substrate (A) having a surface roughness of 0.2 to 2.2 μm in terms of an arithmetic average height Ra; a Ni-based metal film (B) having a film thickness of 50 to 250 nm formed on one surface or both surfaces of the resin film substrate (A) by a sputtering process; and a Ni-based metal oxide film (C) having a film thickness of 100 to 400 nm on the Ni-based metal film (B). The Ni-based metal film (B) has an oxygen content of 0.20 or less in terms of O/Ni atomic number ratio; and the Ni-based metal oxide film (C) has an oxygen content of 0.65 to 0.85 in terms of O/Ni atomic number ratio. The light-shielding film has a minimum optical density of 4 or more and a maximum regular reflectance of 0.4% or less at a wavelength of from 380 to 780 nm.
摘要翻译：要解决的问题：为了提供遮光性，低反射性，滑动性，导电性，耐热性和耐高温和高湿度优异的遮光膜和制造方法，可用于具有相机的移动电话的振膜，快门叶片或光圈叶片的光学装置部件，数字摄像机的数码相机或镜头快门，或投影仪的光量控制光圈叶片。解决方案：遮光膜包括：以算术平均高度Ra计的表面粗糙度为0.2〜2.2μm的树脂膜基板（A）通过溅射法在树脂膜基板（A）的一个表面或两个表面上形成膜厚度为50〜250nm的Ni基金属膜（B）和Ni基金属膜（B）上的膜厚为100〜400nm的Ni系金属氧化物膜（C）。 Ni基金属膜（B）的O / Ni原子数比的氧含量为0.20以下。 Ni基金属氧化物膜（C）的O / Ni原子数比的氧含量为0.65〜0.85。遮光膜的波长为380〜780nm时的最小光密度为4以上，最大规则反射率为0.4％以下。

5. 发明专利

JP2012203309A Heat-resistant light-shielding film 审中-公开
标题翻译：耐热遮光膜
公开(公告)号：JP2012203309A
公开(公告)日：2012-10-22
申请号：JP2011069719
申请日：2011-03-28
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： OKUBO KAZUHIKO , ONO KATSUSHI
IPC分类号： G02B5/00 , B32B9/00 , B32B15/088 , C23C14/06 , G03B9/02 , G03B9/10
摘要： PROBLEM TO BE SOLVED: To provide a heat-resistant light-shielding film having excellent heat resistance, high light-shielding property and low reflecting property to be used for components of optical apparatuses such as a shutter blade or a diaphragm blade used for a lens shutter of a digital camera or a digital video camera, a fixed diaphragm in a lens unit of a cell phone with a camera or of an in-vehicle monitor, and a diaphragm blade of a luminous energy control module of a liquid crystal projector.SOLUTION: The heat-resistant light-shielding film includes a metal light-shielding film (B) having a film thickness of 50 nm or more and a metal oxide film (D) having low reflecting property and a film thickness of 5 nm or more, formed by a sputtering method and layered on one surface or both surfaces of a resin film substrate (A) having heat resistance against 200°C or higher. In the heat-resistant light-shielding film, an antioxidation film (C) having a film thickness of 1 to 50 nm is formed by the sputtering method between the metal light-shielding film (B) and the metal oxide film (D).
摘要翻译：解决的问题：提供一种耐热性，高遮光性和低反射性的耐热遮光膜，用于光学设备例如快门叶片或所使用的光阑叶片的部件用于数码相机或数字摄像机的透镜快门，具有相机或车载监视器的手机的透镜单元中的固定光阑以及液晶的光能控制模块的光阑叶片投影机。解决方案：耐热遮光膜包括膜厚度为50nm以上的金属遮光膜（B）和具有低反射性和膜厚度为5的金属氧化物膜（D） nm以上，通过溅射法形成，并且层压在耐热性在200℃以上的树脂膜基板（A）的一个面或两面上。在耐热遮光膜中，通过金属遮光膜（B）和金属氧化物膜（D）之间的溅射法形成膜厚为1〜50nm的抗氧化膜（C）。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010001518A Method of manufacturing heat-resistant and light-shielding film, and heat-resistant and light-shielding film 有权
标题翻译：制造耐热和遮光膜的方法，耐热和遮光膜
公开(公告)号：JP2010001518A
公开(公告)日：2010-01-07
申请号：JP2008160192
申请日：2008-06-19
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ONO KATSUSHI , TSUKAGOSHI YUKIO , ABE TAKAYUKI
IPC分类号： C23C14/34
CPC分类号： Y02P20/52
摘要： PROBLEM TO BE SOLVED: To provide a heat-resistant and light-shielding film capable of suppressing abrupt deposition of an oxide layer on the surface of a metal target by a reactive gas, depositing the metal oxide film of the metal oxide composition with excellent reproducibility by reactive sputtering, and achieving high light-shielding property, low reflectance and low glossiness in a visible ray region of the wavelength of 380-780 nm. SOLUTION: In the manufacturing method of the heat-resistant and light-shielding film in which a metallic film is deposited on a heat-resistant resin film, and a metal oxide film is successively deposited on the metal film, after depositing the metal film, the initial stage pre-sputtering, the middle-stage pre-sputtering, and the final stage pre-sputtering are successively performed for the predetermined time with the predetermined ratio of the flow rate of the reactive gas to the sputtering gas for continuously depositing the metal oxide film without stopping the sputtering of the metal target used for the film deposition of the metal film, and the permanent sputtering is performed with the ratio of the gas flow rate when the final stage pre-sputtering is completed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供一种能够通过反应气体抑制金属靶的表面上的氧化物层的突然沉积的耐热和遮光膜，沉积金属氧化物组合物的金属氧化物膜通过反应溅射具有优异的再现性，并且在波长380-780nm的可见光区域中获得高的遮光性，低反射率和低光泽度。解决方案：在将金属膜沉积在耐热树脂膜上的耐热和遮光膜的制造方法中，并且金属氧化物膜依次沉积在金属膜上，金属膜，初始阶段预溅射，中间阶段预溅射和最后阶段预溅射，以连续地以反应气体与溅射气体的流量的预定比率连续进行预定时间沉积金属氧化物膜而不停止用于金属膜的沉积的金属靶的溅射，并且以最终级预溅射完成之后的气体流量比进行永久溅射。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2008216951A Heat resistant/light shielding film and its manufacturing method, and iris or light quantity control device using the same 有权
标题翻译：耐热/遮光膜及其制造方法以及使用其的IRIS或光数量控制装置
公开(公告)号：JP2008216951A
公开(公告)日：2008-09-18
申请号：JP2007109297
申请日：2007-04-18
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： ONO KATSUSHI , TSUKAGOSHI YUKIO , ABE TAKAYUKI
IPC分类号： G03B9/00 , G03B9/02 , G03B9/10 , G03B9/36
摘要： PROBLEM TO BE SOLVED: To provide heat resistant/light shielding film to be used as an optical equipment component such as a shutter blade and an iris blade of a digital camera, a lens shutter, etc. and an iris blade for an optical quantity controlling iris device of a projector and excellent in a light shielding property, heat resistivity, slidability, low glossiness, and conductivity, and to provide a manufacturing method of the heat resistant/light shielding film. SOLUTION: The heat resistant/light shielding film is composed of a laminated film of a resin film base material (A) having heat resistivity of ≥200°C, an N-group metallic film (B) formed one side or both sides of the resin film base material (A) by a sputtering method and having film thickness of ≥50 nm and a low reflective oxide film (C) containing an element selected from titanium, tantalum, tungsten, vanadium, molybdenum, cobalt, niobium, iron, copper, zinc, aluminum, silicon, tin, indium, gallium, and cerium, and the surface roughness of the laminated film is 0.1 to 0.7 μm. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用作光学设备部件的耐热/遮光膜，例如快门叶片和数码相机的光圈叶片，透镜快门等，以及用于投影机的光量控制光圈装置，遮光性，耐热性，滑动性，光泽度和导电性优异，并且提供耐热/遮光膜的制造方法。解决方案：耐热/遮光膜由热电阻率≥200℃的树脂膜基材（A），一侧形成的N族金属膜（B）或两面形成的层叠膜通过溅射法并且具有≥50nm的膜厚度的树脂膜基材（A）的侧面和包含选自钛，钽，钨，钒，钼，钴，铌等的元素的低反射氧化物膜（C）铁，铜，锌，铝，硅，锡，铟，镓和铈，层压膜的表面粗糙度为0.1〜0.7μm。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005171341A Ni alloy target and thin ni alloy film 审中-公开
标题翻译： NI合金目标和薄镍合金薄膜
公开(公告)号：JP2005171341A
公开(公告)日：2005-06-30
申请号：JP2003414662
申请日：2003-12-12
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： WATANABE HIROYUKI , ENBOKU MASAKAZU , SUGIHARA MASAHIRO , ONO KATSUSHI
IPC分类号： C23C14/34 , C22C19/03
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target having excellent target characteristics (saturation magnetization) and high utilization efficiency and a thin film having excellent electrode film characteristics (conductivity and adhesion strength). SOLUTION: The sputtering target has a composition containing 1 to 20 mass% Ti and 1 to 40 mass% Cu, and the balance substantially Ni. A two-layered electrode film is produced by forming a thin Ni alloy film on a ceramic substrate by a sputtering method which uses the target. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的靶特性（饱和磁化强度）和高利用率的溅射靶以及具有优异的电极膜特性（导电性和粘合强度）的薄膜。解决方案：溅射靶具有含有1〜20质量％Ti和1〜40质量％Cu的组成，余量基本上为Ni。通过使用靶材的溅射法在陶瓷基板上形成薄的Ni合金膜来制造双层电极膜。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004233385A Repulsion type 1.5-stage type optical isolator, repulsion type two-stage type optical isolator and their manufacturing methods 审中-公开
公开(公告)号：JP2004233385A
公开(公告)日：2004-08-19
申请号：JP2003018204
申请日：2003-01-28
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： NOGUCHI KENICHI , UEMURA MIKIO , ONO KATSUSHI , NUMAJIRI HIROO
IPC分类号： G02B27/28
摘要： PROBLEM TO BE SOLVED: To provide repulsion type 1.5-stage type and 2-stage type optical isolators and their assembling methods.
SOLUTION: The optical isolator is principally constituted of an almost cylindrical holder, an almost cartridge-shaped incident holder having an aperture part on its bottom part and provided with a polarizer and an FR film, and a polarizer if necessary on its inside in this order from the bottom part side, an almost cartridge-shaped emitting holder having an aperture part on its bottom part and provided with a polarizer, an FR film and a polarizer on its inside in this order from the bottom part side, a magnet for magnetizing the FR film in the incident holder, and a magnet for magnetizing the FR film in the emitting holder. The optical isolator is provided with the incident holder at one end of the holder and the emitting holder at the other end thereof, and the magnet for magnetizing the FR film in the incident holder between the incident holder and the holder and the magnet for magnetizing the FR film in the emitting holder between the emitting holder and the holder so as to repulse each other.
COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2014235196A 遮光フィルムとその製造方法、および、それを用いたフォーカルプレーンシャッター羽根有权
标题翻译：遮光膜及其制造方法及使用其的FOCAL PLANE SHUTTER BLADE
公开(公告)号：JP2014235196A
公开(公告)日：2014-12-15
申请号：JP2013114745
申请日：2013-05-31
申请人：住友金属鉱山株式会社 , Sumitomo Metal Mining Co Ltd
发明人： ONO KATSUSHI , OKUBO KAZUHIKO , NAKAYAMA NORIYUKI
IPC分类号： G02B5/00 , C23C14/06 , C23C14/20 , G03B9/36
摘要：【課題】デジタル一眼レフカメラのフォーカルプレーンシャッター羽根として用いられ、遮光性、低反射性、摺動性、導電性、耐熱性・耐高温高湿性、耐衝撃性に優れた遮光フィルムとその製造方法を提供する。【解決手段】樹脂フィルム(A)の両面上に、膜厚が40〜250nmの結晶相からなるNi系金属膜(B)を有し、さらに最表面に膜厚100〜400nmのNi系金属酸化物膜(C)を有する遮光フィルムであって、最表面の算術平均高さRaが両方とも0.1〜2.1μmであり、波長380〜780nmにおける光遮光性の指標である最小光学濃度が4を超え、最大正反射率が0.4%未満、曲げ剛性が2.0N・m2/m、引裂強度が6.0N/mm以上、動摩擦係数が0.2以下である遮光フィルムなどにより提供する。【選択図】図1
摘要翻译：要解决的问题：提供一种用于数字单镜头反光相机的焦平面快门叶片的遮光膜，并且具有优异的遮光性，低反射率，滑动性，导电性，耐热性和耐电阻性耐高温，高湿度，耐冲击性，并提供其制造方法。解决方案：遮光膜具有Ni基金属膜（B），其由具有膜厚度为在树脂膜（A）的两面上具有40-250nm，并且在其最外表面上具有膜厚度为100-400nm的Ni基金属氧化物膜（C）。最外表面的算术平均高度Ra都为0.1〜2.1μm，作为遮光性的指标，波长380-780nm的最小光密度超过4，最大规则反射率小于0.4％，弯曲刚性为2.0Nm / m，撕裂强度为6.0N / mm以上，动摩擦系数为0.2以下。

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