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1. 发明专利

JP2013223393A Power conversion circuit 审中-公开
标题翻译：电源转换电路
公开(公告)号：JP2013223393A
公开(公告)日：2013-10-28
申请号：JP2012095308
申请日：2012-04-19
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Toyohashi Univ Of Technology , 国立大学法人豊橋技術科学大学
发明人： FUJIKAWA KAZUHIRO , HATSUKAWA SATOSHI , SHIGA NOBUO , OHIRA TAKASHI
IPC分类号： H02M7/48
CPC分类号： H02M7/53871 , H02M7/538 , H02M7/5387
摘要： PROBLEM TO BE SOLVED: To make it possible to provide a power conversion circuit at a low price.SOLUTION: A power conversion circuit 1 according to an embodiment is a bridge type power conversion circuit which: comprises first and second switching elements 11 and 12 connected in series in order between a high voltage side input terminal and low voltage side input terminal, and third and fourth switching elements 13 and 14 connected in series in order between the high voltage side input terminal and low voltage side input terminal; and converts DC power input between the high voltage side input terminal and low voltage side input terminal to AC power by alternately switching a set of the first and fourth switching elements 11 and 14 and a set of the second and third switching elements 12 and 13 to an on-state, where any one set of a set of the first and third switching elements 11 and 13 and a set of the second and fourth switching elements 12 and 14 is controlled to be switched at a frequency higher than that of the other set.
摘要翻译：要解决的问题：使得可以以低价格提供电力转换电路。解决方案：根据实施例的电力转换电路1是桥式电力转换电路，其包括连接的第一和第二开关元件11和12 按照高压侧输入端子和低压侧输入端子之间的顺序串联连接的第三和第四开关元件13和14，高压侧输入端子和低压侧输入端子之间依次串联连接; 通过交替切换第一和第四开关元件11和14的一组以及第二和第三开关元件12和13的一组，将高压侧输入端子和低压侧输入端子之间的直流电力输入转换成交流电力，以导通状态，其中一组第一和第三开关元件11和13以及一组第二和第四开关元件12和14中的一组被控制为以比另一组更高的频率切换。

2. 发明专利

JP2011135357A Switching circuit, distributed constant type switching circuit, and envelope signal amplifier 审中-公开
标题翻译：切换电路，分布式恒定类型开关电路和信号放大器
公开(公告)号：JP2011135357A
公开(公告)日：2011-07-07
申请号：JP2009293257
申请日：2009-12-24
申请人： Sumitomo Electric Ind Ltd , Toyohashi Univ Of Technology , 住友電気工業株式会社 , 国立大学法人豊橋技術科学大学
发明人： OHIRA TAKASHI , WADA WASEN , NAKATA MITSUTOSHI , HATSUKAWA SATOSHI , SHIGA NOBUO
IPC分类号： H03F3/217 , H03F1/06
摘要： PROBLEM TO BE SOLVED: To provide a switching circuit with which higher frequency and larger power amplification is possible than with a push-pull amplifier using a switching element whose semiconductor material consists of silicon or gallium arsenide, by switching an inductance element with a single switching element, and to provide an envelope signal amplifier with the switching circuit.
SOLUTION: The switching circuit 33a is provided with: an input side transmission line in which gates of n transistors (FET) M1, M2 to Mn using silicon carbide (SiC) as the semiconductor material are cascade-connected via a coil L1; and an output side transmission line in which drains of the respective transistors M1, M2 to Mn are cascade-connected via a coil L2. The transistors Mm (m is an integer from 1 to n) are sequentially turned on by a PWM signal which is given from an input end 331 to be propagated on the input side transmission line, and current which flows in the drain of the transistors Mm is added to current which is propagated in a direction toward an output end 332 on the output side transmission line.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种与使用半导体材料由硅或砷化镓组成的开关元件的推挽放大器相比可以实现更高频率和更大功率放大的开关电路，通过将电感元件与单个开关元件，并且提供具有开关电路的包络信号放大器。解决方案：开关电路33a具有：输入侧传输线，其中使用碳化硅（SiC）作为半导体材料的n个晶体管（FET）M1，M2至Mn的栅极通过线圈L1级联 ; 以及输出侧传输线，其中各个晶体管M1，M2至Mn的漏极经由线圈L2级联连接。晶体管Mm（m是从1到n的整数）通过从输入端331输出的PWM信号顺序导通，以在晶体管Mm的漏极中流动的电流被添加到在输出侧传输线上朝向输出端332的方向传播的电流。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011250011A Switching circuit and envelope curve signal amplifier 有权
标题翻译：切换电路和包络线信号放大器
公开(公告)号：JP2011250011A
公开(公告)日：2011-12-08
申请号：JP2010119483
申请日：2010-05-25
申请人： Sumitomo Electric Ind Ltd , Toyohashi Univ Of Technology , 住友電気工業株式会社 , 国立大学法人豊橋技術科学大学
发明人： OHIRA TAKASHI , WADA KAZUYUKI , NAKADA MITSUTOSHI , HATSUKAWA SATOSHI , SHIGA NOBUO
IPC分类号： H03F3/217 , H03F1/02
CPC分类号： H03F1/0227 , H01L23/645 , H01L23/66 , H01L2223/6644 , H01L2224/48227 , H01L2924/13091 , H02M2003/1586 , H03F1/18 , H03F3/217 , H03F3/2176 , H03F3/2178 , H03F3/607 , H03F2200/102 , H03F2200/351 , H03F2200/366 , Y10T307/747 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a switching circuit which can synthesize PWM signals amplified by multiple switching elements with low loss and can demodulate a modulation signal, and to provide an envelope curve signal amplifier with the switching circuit.SOLUTION: The switching circuit 33 comprises a coil L2 having one end connected with a power supply Vdd, n transistors M1, ..Mn each having a coil L3 interposed between the other end of the coil L2 and the drain D1, ..Dn, and a connection circuit which cascades the gates G1, ..Gn via the coils L1, ..L1. The transistors M1, ..Mn are turned on sequentially by PWM signals provided from an input terminal 331 and propagating through the connection circuit. When the PWM signals output from the drains D1, ..Dn through respective coils L3 are added at the other end of the coil L2, fundamental-wave of pulse width modulation and harmonics of (n-1) and subsequent orders are canceled.
摘要翻译：要解决的问题：提供一种开关电路，其可以合成由多个开关元件以低损耗放大的PWM信号并且可以解调调制信号，并且提供与开关电路的包络线信号放大器。解决方案：开关电路33包括一个线圈L2，其一端与电源Vdd连接，n个晶体管M1，..Mn分别具有插入在线圈L2的另一端和漏极D1之间的线圈L3。 .Dn，以及通过线圈L1，..L1级联栅极G1，..Gn的连接电路。晶体管M1，..Mn由输入端子331提供的PWM信号依次导通，并通过连接电路传播。当在线圈L2的另一端添加从漏极D1，..Dn输出的各个线圈L3的PWM信号时，消除脉冲宽度调制的基波和（n-1）次序和后续阶数的谐波。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2013110680A Switching circuit and envelope signal amplifier 有权
标题翻译：切换电路和信号放大器
公开(公告)号：JP2013110680A
公开(公告)日：2013-06-06
申请号：JP2011256130
申请日：2011-11-24
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Toyohashi Univ Of Technology , 国立大学法人豊橋技術科学大学
发明人： HATSUKAWA SATOSHI , FUJIKAWA KAZUHIRO , CHIKUNO TAKASHI , SHIGA NOBUO , OHIRA TAKASHI , WADA KAZUYUKI , WUREN TUYA , TANIMURA KOTARO
IPC分类号： H03F1/02 , H03F3/217
CPC分类号： H03K17/687 , H02M1/08 , H02M3/158 , H03F1/0211 , H03F1/0222 , H03F3/16 , H03F3/217 , H03F3/45 , H03F3/55 , H03F3/607 , H03F2200/102 , H03F2200/351 , Y10T307/747
摘要： PROBLEM TO BE SOLVED: To provide a switching circuit that combines PWM signals amplified through a plurality of switching elements with a low loss to demodulate a modulated signal, and an envelope signal amplifier having the switching circuit.SOLUTION: A switching circuit 33 of an embodiment includes: a connection circuit cascade-connecting control terminals for controlling switching of N (N is an integer of two or greater) respective transistors M1-Mn via N-1 coils L1; and coils L3 connected between an end of a coil L2 having the other end electrically connected to a DC power supply and corresponding ends of the transistors M1-Mn, respectively. The switching elements M1-Mn are sequentially switched according to a PWM signal input into an input terminal of the connection circuit. The switching circuit 33 further includes a transistor M0 inserted on the one end or other end side of the coil L2 in cascade connection.
摘要翻译：要解决的问题：提供一种将通过多个开关元件放大的PWM信号与低损耗组合以解调调制信号的开关电路，以及具有开关电路的包络信号放大器。解决方案：实施例的开关电路33包括：连接电路，用于通过N-1线圈L1控制各个晶体管M1-Mn的N（N为2或更大的整数）的开关级联连接控制端子; 以及连接在具有与DC电源电连接的另一端的线圈L2的端部与晶体管M1-Mn的对应端之间的线圈L3。开关元件M1-Mn根据输入到连接电路的输入端的PWM信号依次切换。开关电路33还包括级联地插入线圈L2的一端或另一端侧的晶体管M0。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013009260A Switching circuit 有权
标题翻译：切换电路
公开(公告)号：JP2013009260A
公开(公告)日：2013-01-10
申请号：JP2011141988
申请日：2011-06-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , Toyohashi Univ Of Technology , 国立大学法人豊橋技術科学大学
发明人： HATSUKAWA SATOSHI , SHIGA NOBUO , FUJIKAWA KAZUHIRO , OHIRA TAKASHI , WADA KAZUYUKI , WUREN TUYA , ISHIOKA KAZUYA , SAWADA KAZUSHI
IPC分类号： H03F1/02 , H02M7/48 , H03F3/217 , H03K17/687
CPC分类号： H03K17/162 , H03F3/2171 , H03F3/2176 , H03F2200/507 , H03H7/0115 , H03H7/1708 , H03H7/1725 , H03H7/1758 , H03H7/1766 , H03H7/1775 , H03H7/1783 , H03H7/1791 , H03K2217/0036 , H03K2217/009
摘要： PROBLEM TO BE SOLVED: To provide a switching circuit with an improved power efficiency in which an excessive current caused by a signal component of integral times does not flow in a load circuit and a switching element.SOLUTION: A switching circuit 1 has: a switching element 10 having a first terminal 13 and a second terminal 11, and being driven by a pulse signal to switch a conduction state of the first terminal and the second terminal; a power supply part 30 supplying voltage to the first terminal 13 of the switching element; a load circuit 40 connected in parallel to the power supply part; a passive circuit part 50 connected between a connection point P between the power supply part and the load circuit and the first terminal of the switching element, and suppressing current flowing from the connection point to the switching element at a frequency of N times a clock frequency of the pulse signal (N is an integer equal to or more than one); and a resonance circuit part 60 connected between the passive circuit part and the connection point, and resonating at the frequency of N times.
摘要翻译：要解决的问题：提供一种具有提高的功率效率的开关电路，其中由积分时间的信号分量引起的过大电流不在负载电路和开关元件中流动。开关电路1具有：具有第一端子13和第二端子11的开关元件10，并由脉冲信号驱动以切换第一端子和第二端子的导通状态; 电源部分30，向开关元件的第一端子13提供电压; 与电源部并联连接的负载电路40; 连接在电源部分和负载电路之间的连接点P和开关元件的第一端子之间的无源电路部分50，并且以N倍的时钟频率抑制从连接点流向开关元件的电流的脉冲信号（N是等于或大于1的整数）; 以及连接在无源电路部分和连接点之间并以N次频率谐振的谐振电路部分60。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013108896A Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013108896A
公开(公告)日：2013-06-06
申请号：JP2011255264
申请日：2011-11-22
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HATSUKAWA SATOSHI
IPC分类号： G01R31/26 , H01L25/04 , H01L25/18
CPC分类号： H01L22/22 , H01L24/48 , H01L2224/0603 , H01L2224/48227 , H01L2224/48233 , H01L2224/49175 , H01L2924/00014 , H01L2924/12042 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a plurality of semiconductor elements which is capable of reducing a loss when detecting current flowing through the semiconductor devices; and a method of manufacturing the same.SOLUTION: A semiconductor device 1 according to one embodiment comprises: a wiring board 20 that has a wiring pattern 22; N (N is a natural number equal to or greater than 2) semiconductor elements 10 that are mounted on the wiring board; and current detecting units 30A and 30B mounted on the wiring board, which detects current flowing through m (m is a natural number that is 1 or greater and smaller than M) semiconductor elements 10 out of M (M is a natural number that is 1 or greater and N or smaller) semiconductor elements 10 which are selected from the N semiconductor elements. The M semiconductor elements are electrically parallel-connected via a wiring pattern and the m semiconductor elements are electrically parallel-connected to the other semiconductor elements out of the M semiconductor elements via the current detecting units.
摘要翻译：解决的问题：提供一种包括多个半导体元件的半导体器件，其能够在检测流过半导体器件的电流时减少损耗; 及其制造方法。解决方案：根据一个实施例的半导体器件1包括：具有布线图案22的布线板20; N（N是等于或大于2的自然数）半导体元件10，其安装在布线板上; 以及安装在布线板上的电流检测单元30A和30B，M检测从M（m是1以上且小于M的自然数）流过的电流（M为1的自然数）或更大和N个或更小的）半导体元件10，其选自N个半导体元件。 M个半导体元件经由布线图形电并联，并且m个半导体元件经由电流检测单元与M个半导体元件中的其它半导体元件并联连接。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2011254021A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011254021A
公开(公告)日：2011-12-15
申请号：JP2010128196
申请日：2010-06-03
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HATSUKAWA SATOSHI
IPC分类号： H01L25/07 , G01R31/26 , H01L25/18
CPC分类号： H01L22/10 , H01L22/14 , H01L22/20 , H01L23/24 , H01L24/48 , H01L25/072 , H01L25/50 , H01L2224/4824 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/014 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/12042 , H01L2924/1304 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device using small capacity chips.SOLUTION: The method of manufacturing a semiconductor device comprises: a step (S1) of mounting a plurality of SiC semiconductor chips on a mounting board; a step (S2) of applying voltage to the SiC semiconductor chips on the mounting board; a step (S3) of acquiring a temperature distribution image of a surface of the mounting board by a thermal video system such as a thermography or an infrared microscope, with the voltage applied; a step (S5) of judging the presence or absence of a defective chip by performing image analysis; and a step (S7) of rejecting the defective chip by cutting the wiring of the defective chip when there is a defective chip on the mounting board (S5:YES).
摘要翻译：要解决的问题：提供一种使用小容量芯片制造半导体器件的方法。解决方案：制造半导体器件的方法包括：将多个SiC半导体芯片安装在安装板上的步骤（S1）; 向所述安装基板上的所述SiC半导体芯片施加电压的步骤（S2）通过施加电压的方式，通过热像仪或红外显微镜等热像系统来取得安装板的表面的温度分布图像的步骤（S3）通过执行图像分析来判断有缺陷的芯片的存在或不存在的步骤（S5）; 以及当安装板上存在缺陷芯片时，通过切断有缺陷芯片的布线来拒绝有缺陷的芯片的步骤（S7）（S5：是）。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011040829A Power line communication device, power supply circuit with communication function, electrical appliance and control monitoring system 有权
标题翻译：电力线通信设备，具有通信功能的电源电路，电气设备和控制监控系统
公开(公告)号：JP2011040829A
公开(公告)日：2011-02-24
申请号：JP2009183745
申请日：2009-08-06
申请人： Kyoto Univ , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 国立大学法人京都大学
发明人： HIKIHARA TAKASHI , TAKUNO TSUGUHIRO , HIROTSU KENICHI , SHIMOKUCHI TAKASHI , SHIBATA TOSHIKAZU , CHIKUNO TAKASHI , HATSUKAWA SATOSHI
IPC分类号： H04B3/54 , H04Q9/00
CPC分类号： H04B3/56 , H04B3/54 , H04B2203/5416 , H04B2203/5458 , H04B2203/547
摘要： PROBLEM TO BE SOLVED: To achieve a transmission function in power line communication with a simpler and inexpensive circuit configuration in PLC (Power Line Communication) modems to be installed in electric appliances such as household electric appliances.
SOLUTION: A power line communication device is configured such that a semiconductor switching element Sx which exists on an electrical circuit connected to a power line is driven by a modulation unit 12. This modulation unit 12 outputs a modulated rectangular-wave communication signal to the power line for a prescribed period of time by controlling the on/off of the semiconductor switching element Sx.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：在PLC（电力线通信）调制解调器中以更简单且更廉价的电路配置实现电力线通信中的传输功能，以安装在诸如家用电器的电器中。解决方案：电力线通信装置被配置为使得存在于连接到电力线的电路上的半导体开关元件Sx由调制单元12驱动。该调制单元12输出调制的矩形波通信信号通过控制半导体开关元件Sx的导通/截止，将电力线延长规定时间。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2008308747A Vapor-phase deposition apparatus and vapor-phase deposition method 有权
标题翻译：蒸气相沉积装置和蒸发相沉积方法
公开(公告)号：JP2008308747A
公开(公告)日：2008-12-25
申请号：JP2007159106
申请日：2007-06-15
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HATSUKAWA SATOSHI
IPC分类号： C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor-phase deposition apparatus capable of suppressing distribution of gas between the surface side and the backside of a susceptor, and to provide a vapor-phase deposition method.
SOLUTION: The vapor-phase deposition apparatus has a susceptor as a rotating/revolving susceptor. The susceptor includes a susceptor body 5, an inner circumferential gear 7 and a soaking member 9. The susceptor body 5 revolves, and an opening part is formed therein. The inner circumferential gear 7 and the soaking member 9 are rotatably installed in the opening part of the susceptor body 5, and a substrate 26 is mounted thereon. The inner circumferential gear 7 has a gear part and a cover member 18. The gear part is formed on the outer circumferential part of a flange part of the inner circumferential gear 7, and driving force for rotating the inner circumferential gear 7 is transmitted thereto. The cover member 18 covers at least part of the upper surface of the flange part in the direction crossing the axis of rotation when the inner circumferential gear 7 rotates, and is projected in the direction crossing the axis of rotation from an outer edge on the side surface of an adjacent tooth of the gear formed on the outer circumferential part of the flange part.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供能够抑制基座的表面侧和背面之间的气体分布的气相沉积装置，并提供气相沉积方法。气相沉积装置具有作为旋转/旋转基座的基座。基座包括基座体5，内周齿轮7和均热构件9.基座体5旋转，并且在其中形成有开口部。内周齿轮7和均热部件9可旋转地安装在基座体5的开口部分中，并且基板26安装在基体26上。内周齿轮7具有齿轮部和盖部件18.齿轮部形成在内周齿轮7的凸缘部的外周部，并且使内周齿轮7旋转的驱动力被传递到内周齿轮7。当内周齿轮7旋转时，盖构件18在与旋转轴线交叉的方向上覆盖凸缘部的上表面的至少一部分，并且从侧面的外边缘沿与旋转轴线交叉的方向突出形成在凸缘部的外周部上的齿轮的相邻齿的表面。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008171933A Semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体制造设备
公开(公告)号：JP2008171933A
公开(公告)日：2008-07-24
申请号：JP2007002325
申请日：2007-01-10
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KURAMOTO TOSHIYUKI , UEDA TOSHIO , UENO MASANORI , SENDA HIROHIKO , HATSUKAWA SATOSHI , WATANABE YOKO
IPC分类号： H01L21/68 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus in which a higher processing temperature can be provided. SOLUTION: The semiconductor manufacturing apparatus includes a susceptor body 5 serving as a rotary susceptor that holds workpieces of substrates 26, and a rotating shaft 13 that transmits torque to the susceptor body 5. A rotating shaft connection is disposed on the front end of the rotating shaft 13 that faces the susceptor 5, and connecting members 15 are disposed at the center of main surface of the susceptor body 5 that faces the rotating shaft 13. The rotating shaft 13 is disposed above the center of main surface of the susceptor body 5 so that the rotation of the rotating shaft 13 causes the side face of the rotating shaft connection to press the side faces of the connecting members 15 to rotate the susceptor body 5. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种其中可以提供较高处理温度的半导体制造装置。解决方案：半导体制造装置包括用作保持基板26的工件的旋转基座的基座体5和将转矩传递到基座体5的旋转轴13.旋转轴连接设置在前端与基座5相对的旋转轴13，并且连接构件15配置在基座体5的与旋转轴13相对的主面的中心。旋转轴13设置在基座的主面的中心的上方使得旋转轴13的旋转使得旋转轴连接的侧面按压连接构件15的侧面以使基座体5旋转。版权所有（C）2008，JPO＆INPIT

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