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1. 发明专利

JP2014092713A Polarization multiplex optical modulator device and integrated optical element 审中-公开
标题翻译：极化多光学调制器器件和集成光学元件
公开(公告)号：JP2014092713A
公开(公告)日：2014-05-19
申请号：JP2012243835
申请日：2012-11-05
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , KONO NAOYA , YAMAJI KAZUHIRO
IPC分类号： G02F1/01 , G02B6/42 , G02F1/017
摘要： PROBLEM TO BE SOLVED: To provide a polarization multiplex optical modulator device capable of reducing optical skew of optical multiplexing.SOLUTION: A third edge 13c and a fourth edge 13d of an integrated optical element 13 extend along an axis Ax3 crossing an axis Ax2. An optical input port 12c is positioned at the third edge 13c. An arrangement of interconnections of a second group and interconnections of a first group of the integrated optical element 13 causes electric skew between signal propagation from an input 14 of the first group to an optical modulator 31 of the first group and signal propagation from an input 16 of the second group to an optical modulator 33 of the second group. Interconnections defining the sign of the electric skew are arranged so as to reduce the optical skew. First to fourth inputs 14a to 14d are arrayed along the first edge 13a. The edge 13a where inputs of electric signals are arranged is different from the edge 13c where the optical input port 12c is positioned, so that the position of the optical input port 12c does not interfere with an arrangement of inputs of electric signals.
摘要翻译：要解决的问题：提供能够减少光学多路复用的光学偏斜的偏振复用光调制器件。解决方案：集成光学元件13的第三边缘13c和第四边缘13d沿着与轴线Ax2交叉的轴线Ax3延伸。光输入端口12c位于第三边缘13c处。集成光学元件13的第一组的互连布置和互连的布置导致从第一组的输入端14到第一组的光学调制器31的信号传播之间的电偏移以及来自输入端16的信号传播的第二组的光调制器33。定义电偏移的符号的互连被布置为减少光学偏斜。第一至第四输入14a至14d沿着第一边缘13a排列。布置电信号的输入端的边缘13a与光输入端口12c所在的边缘13c不同，使得光输入端口12c的位置不干扰电信号输入的布置。

2. 发明专利

JP2009224497A Manufacturing method of semiconductor laser element 审中-公开
标题翻译：半导体激光元件的制造方法
公开(公告)号：JP2009224497A
公开(公告)日：2009-10-01
申请号：JP2008066324
申请日：2008-03-14
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , KAI YOJI
IPC分类号： H01S5/028 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element capable of efficiently forming an end-face coating film having a desired reflection characteristic.
SOLUTION: In this manufacturing method of a semiconductor laser element, by forming the same antireflection films 11 on a plurality of samples 1 having oscillation wavelengths different from one another, the wavelength dependency of the antireflection film 11 can be obtained in a wide wavelength range over tens of nm unlike the conventional case where reflectivity of an antireflection film formed on a semiconductor laser element becoming a product is directly measured. Accordingly, by compensating a film formation condition of the antireflection film 11 on a distribution feedback type semiconductor laser element becoming a product by comparing a film structure of the antireflection film 11 determined from the wavelength dependency with a film structure at design, the antireflection film 11 having a desired reflection characteristic can be efficiently formed.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够有效地形成具有期望的反射特性的端面涂膜的半导体激光元件的制造方法。解决方案：在这种半导体激光元件的制造方法中，通过在具有不同的振荡波长的多个样品1上形成相同的抗反射膜11，可以获得宽反射膜11的波长依赖性波长范围在数十nm以上，这是与半导体激光元件上形成的抗反射膜成为产品的反射率直接测量的常规情况不同的。因此，通过将由波长依赖性决定的防反射膜11的膜结构与设计中的膜结构进行比较来补偿成为产品的分布反馈型半导体激光元件上的防反射膜11的成膜条件，抗反射膜11 可以有效地形成具有期望的反射特性。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008090177A Optical waveguide 审中-公开
标题翻译：光波导
公开(公告)号：JP2008090177A
公开(公告)日：2008-04-17
申请号：JP2006273191
申请日：2006-10-04
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： SEKI MORIHIRO , HATTORI TETSUYA , FUKUDA CHIE
IPC分类号： G02B6/122 , G02B6/13
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide that can reduce bending loss and that facilitates manufacturing. SOLUTION: In the optical waveguide 1, a core 12 rectangular in cross section is covered with a lower clad 11 and an upper clad 13 in its side faces. On each of the two opposing side faces 12S of the core 12, there is formed a segregation part S of GeO 2 enhancing a refractive index. Also, the core 12 is provided with a first range 12a in the center and a second range 12b including the ends. The core width of the first range 12a is narrower than that of the second range 12b, while each region of the segregation part S is approximately the same size in the first range 12a and in the second range 12b. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以减少弯曲损耗并且便于制造的光波导。解决方案：在光波导1中，横截面矩形的芯12在其侧面被下包层11和上包层13覆盖。在芯12的两个相对的侧面12S中的每一个上，形成增强折射率的GeO 2 的偏析部分S. 此外，芯部12设置有中心的第一范围12a和包括端部的第二范围12b。第一范围12a的芯部宽度比第二范围12b的纤芯宽度窄，而分隔部分S的每个区域在第一范围12a和第二范围12b中大致相同的尺寸。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2006287038A Optical waveguide and optical amplifier 审中-公开
标题翻译：光波导和光放大器
公开(公告)号：JP2006287038A
公开(公告)日：2006-10-19
申请号：JP2005106334
申请日：2005-04-01
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , KATSUYAMA TSUKURU
IPC分类号： H01S3/06
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide and an optical amplifier capable of amplifying and outputting light having various wavebands. SOLUTION: The optical amplifier 100 comprises the optical waveguide 10, and an excitation light source P for supplying an exciting light L1 to the waveguide 10. The waveguide 10 comprises a core 8, and a plurality of laminated bodies 12 distributed in the core 8. The bodies 12 comprise a first layer 14, a compound semiconductor layer 16 provided on the layer 14, and a second layer 18 provided on the layer 16. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够放大并输出具有各种波段的光的光波导和光放大器。解决方案：光放大器100包括光波导10和用于向波导10提供激发光L1的激发光源P.波导10包括芯8和分布在波导10中的多个层叠体12。主体12包括第一层14，设置在层14上的化合物半导体层16和设置在层16上的第二层18。版权所有（C）2007，JPO和INPIT

5. 发明专利

JP2006255664A Method for manufacturing micro flow passage device 审中-公开
标题翻译：制造微流量通气装置的方法
公开(公告)号：JP2006255664A
公开(公告)日：2006-09-28
申请号：JP2005080277
申请日：2005-03-18
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , HATTORI TETSUYA
IPC分类号： B01J19/00 , B81C1/00 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a micro flow passage device having a structure stable on a long-term basis.
SOLUTION: The method for manufacturing the micro flow passage device 10 comprises a film depositing step of depositing a silicon oxide film 3 on a groove 1-formed substrate 12 by using a plasma process so that a cavity 5 extending along the groove 1 is formed in the groove 1. Particularly, the silicon oxide film 3 is preferably deposited by using an inductively coupled plasma CVD method.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有长期稳定的结构的微型流路装置的制造方法。解决方案：微通道装置10的制造方法包括通过使用等离子体处理将氧化硅膜3沉积在形成槽1的基板12上的膜沉积步骤，使得沿槽1延伸的空腔5 形成在沟槽1中。特别地，优选通过使用电感耦合等离子体CVD方法来沉积氧化硅膜3。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005275300A Method for manufacturing optical waveguide device and the same 审中-公开
标题翻译：制造光波器件及其制造方法
公开(公告)号：JP2005275300A
公开(公告)日：2005-10-06
申请号：JP2004092394
申请日：2004-03-26
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , HATTORI TETSUYA , SEKI MORIHIRO
IPC分类号： G02B6/13 , G02B6/10 , G02B6/122 , G02B6/136
CPC分类号： G02B6/136
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide device with which the deviation of a refractive index profile of a core is reduced and a method for manufacturing the optical waveguide device. SOLUTION: A 1st clad 33 has grooves 39 and includes 1st dopant 41. A 2nd clad 37 is formed on the 1st clad 33 and a core and includes 2nd dopant 43. The insides of the grooves 39 are filled with the core 35. The 1st dopant 41 lowers the refractive index of the 1st clad substrate 33 smaller than that of pure quartz and the 2nd dopant 43 lowers the refractive index of the 2nd clad 37 smaller the refractive index of the pure quartz. Since the 1st and 2nd clads 33, 37 in the optical waveguide device 31 respectively include dopant components 41, 43 which can lower the refractive indexes, the dopant components 41, 43 in the 1st and 2nd clads 33, 37 can be utilized for obtaining a required specific refractive index difference among the core 35 and the clads 33, 37. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种光纤的折射率分布的偏差减小的光波导装置及其制造方法。解决方案：第一包层33具有凹槽39并且包括第一掺杂物41.第一包层37形成在第一包层33和芯上并且包括第二掺杂剂43。凹槽39的内部填充有芯35 第一掺杂物41降低第一包覆基板33的折射率比纯石英的折射率小，第二掺杂物43降低第二包层37的折射率，使纯石英的折射率更小。由于光波导装置31中的第1和第2包层33,37分别包含能够降低折射率的掺杂剂成分41,43，所以可以利用第1和第2包层33,37中的掺杂剂成分41,43来获得核心35和包层33,37之间所需的特定折射率差异。版权所有：（C）2006，JPO＆NCIPI

7. 发明专利

JP2004333851A Optical coupling device 审中-公开
公开(公告)号：JP2004333851A
公开(公告)日：2004-11-25
申请号：JP2003129345
申请日：2003-05-07
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HATTORI TETSUYA , YAMAZAKI KOICHIRO , FUKUDA CHIE , SEKI MORIHIRO
IPC分类号： G02B6/30 , G02B6/42
摘要： PROBLEM TO BE SOLVED: To provide an optical coupling device capable of reducing coupling loss more.
SOLUTION: An optical coupling device 10 is columnar on the whole; and the bottom surface 11 of the column on a 1st end side is flat and a recessed part 13 is formed in the top surface 12 of the column on a 2nd end side. A waveguide area part 14 is provided between the bottom surface 11 and a bottom part 13a of the recessed part 13. This waveguide area part 14 has a higher refractive index than a peripheral part 15 other than the waveguide area part 14, and can guide light from the 1st end (the bottom surface 11) side to the 2nd end (the bottom part 13a of the recessed part 13) side and from the 2nd end side to the 1st end side. Both the maximum width and minimum width of the section of an equivalent waveguide area continuously vary at respective positions on the optical path between the 1st end and 2nd end along the optical path. Refractive indexes at the respective positions on the optical path between the 1st end and 2nd end continuously vary along the optical path.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2014164243A Light modulation module, semiconductor light modulation element 有权
标题翻译：光调制模块，半导体灯调制元件
公开(公告)号：JP2014164243A
公开(公告)日：2014-09-08
申请号：JP2013037314
申请日：2013-02-27
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , KONO NAOYA , SEKI MORIHIRO , YAMAJI KAZUHIRO , YAMAUCHI YASUYUKI , TANAKA KEIJI , TATSUMI TAIZO , ITABASHI NAOKI
IPC分类号： G02F1/017 , G02B6/12
CPC分类号： G02F1/0121 , G02B6/29355 , G02F1/2257 , H04B10/556
摘要： PROBLEM TO BE SOLVED: To provide a light modulation module including a semiconductor light modulation element having a Mach-Zehnder modulator capable of reducing drive power.SOLUTION: A semiconductor light modulation element 13 comprises a first light modulator 20A including a Mach-Zehnder modulator. An electric circuit including a first arm waveguide and a second arm waveguide of the Mach-Zehnder modulator, an electric input, and a differential transmission path has differential impedance in the range of 80 Ω to 95 Ω. An electric circuit relating to each of a second light modulator 20B, a third light modulator 20C and a fourth light modulator 20D also has differential impedance in the range of 80 Ω to 95 Ω. The semiconductor light modulation element 13 provides a semiconductor light modulation element in which the first and second arm waveguides have higher impedance compared to the conventional light modulator and the differential impedance falls in the range of 80 Ω to 95 Ω. This reduces power consumption of a drive circuit that provides an electric signal to the electric input of the semiconductor light modulation element.
摘要翻译：要解决的问题：提供一种光调制模块，其包括具有能够降低驱动功率的马赫 - 曾德调制器的半导体光调制元件。解决方案：半导体光调制元件13包括包括马赫 - 曾德尔调制器的第一光调制器20A。包括马赫 - 曾德调制器的第一臂波导和第二臂波导的电路，电输入和差分传输路径具有在80°和OHgr范围内的差分阻抗; 至95＆OHgr。与第二光调制器20B，第三光调制器20C和第四光调制器20D中的每一个相关的电路也具有在80°和OHgr范围内的差分阻抗; 至95＆OHgr。半导体光调制元件13提供半导体光调制元件，其中第一和第二臂波导具有比常规光调制器更高的阻抗，并且差分阻抗落在80Ω和OHgr的范围内; 至95＆OHgr。这降低了向半导体光调制元件的电输入端提供电信号的驱动电路的功耗。

9. 发明专利

JP2012226162A Method for manufacturing mach-zehnder modulator, and mach-zehnder modulator 审中-公开
标题翻译：制造MACH-ZEHNDER调制器的方法和MACH-ZEHNDER调制器
公开(公告)号：JP2012226162A
公开(公告)日：2012-11-15
申请号：JP2011094297
申请日：2011-04-20
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE , KOYAMA KENJI
IPC分类号： G02F1/025
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a Mach-Zehnder modulator, which is capable of avoiding formation of a false mask and exposure of a clad layer from a contact layer.SOLUTION: In a Mach-Zehnder modulator 11, a first wing portion 47a has a semiconductor mesa edge 51a extending in a [1-10] direction of a fourth III-V compound semiconductor, and a second wing portion 47b has a semiconductor mesa edge 51b extending in the [1-10] direction, and a contact layer 47 has a semiconductor mesa edge 51c extending in the [1-10] direction. Therefore, a structure of a waveguide portion 13a is not disturbed due to formation of a false mask. The first wing portion 47a reaches an outer edge 23a of a first trench 23, and the second wing portion 47b reaches an outer edge 25a of a second trench 25. Therefore, a clad layer 45 is not exposed from the contact layer 47 because the contact layer 47 can be formed from a semiconductor layer having a width allowing formation of both of the wing portions.
摘要翻译：要解决的问题：提供一种制造马赫 - 曾德调制器的方法，该方法能够避免假掩模的形成和覆盖层从接触层的暴露。解决方案：在马赫 - 策德尔调制器11中，第一翼部47a具有在第四III-V族化合物半导体的[1-10]方向上延伸的半导体台面51a，第二翼部47b具有沿[1-10]方向延伸的半导体台面边缘51b和接触层47具有沿[1-10]方向延伸的半导体台面边缘51c。因此，由于形成假掩模，波导部分13a的结构不会受到干扰。第一翼部47a到达第一沟槽23的外缘23a，第二翼部47b到达第二沟槽25的外缘25a。因此，由于接触层47，接触层47不会露出接合层45 层47可以由具有允许形成两个翼部的宽度的半导体层形成。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2012118276A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2012118276A
公开(公告)日：2012-06-21
申请号：JP2010267649
申请日：2010-11-30
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： FUKUDA CHIE
IPC分类号： G02F1/01 , H01L31/10
摘要： PROBLEM TO BE SOLVED: To improve reliability of a waveguide type photodiode.SOLUTION: An optical semiconductor comprises an optical waveguide 50 made of a semiconductor and having a mesa type structure; and a photodiode 52 made of a semiconductor, connected to the optical waveguide 50 and including an optical waveguide structure with a wider mesa type structure than the optical waveguide 50. Since the waveguide of the photodiode 52 is wide, a light waveguide region may be protected even when a defect is caused in the vicinity of a side face of a core 20, and hence, the reliability of the photodiode 52 may be improved.

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