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    • 4. 发明专利
    • Heterojunction bipolar transistor
    • 异相双极晶体管
    • JP2009032869A
    • 2009-02-12
    • JP2007194664
    • 2007-07-26
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • KURITA YASUYUKIFUKUHARA NOBORU
    • H01L21/331H01L29/737
    • H01L29/737H01L29/0817H01L29/201H01L29/205H01L29/7304H01L29/7371
    • PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor (HBT) capable of improving a high-frequency characteristic.
      SOLUTION: An energy level Ec in the vicinity of an interface beween a graded layer 1G and a ballast resistor 1R related to the embodiment is smoothly continued. This is why an increase in n-type impurity concentration C
      ION in the vicinity of the interface provides the presence of an ionized doner (having a positive charge) in the vicinity of the interface. That is, the ion of the doner cancels a spike-like potential barrier ϕ
      BARRIER protruding in a negative direction of the potential in the vicinity of the interface. Therefore, a resistance value of the HBT at room temperature is lowered to improve the high-frequency characteristic.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供能够提高高频特性的异质结双极晶体管(HBT)。 解决方案:与实施例相关的梯度层1G和镇流电阻器1R之间的界面附近的能级Ec顺利地继续。 这就是为什么在界面附近的n型杂质浓度C ION 的增加是在界面附近存在电离二极管(正电荷)的原因。 也就是说,二者的离子抵消了在界面附近的电位的负方向上突出的尖状势垒S BARRIER 。 因此,HBT在室温下的电阻值降低,以提高高频特性。 版权所有(C)2009,JPO&INPIT
    • 5. 发明专利
    • Polymeric light emitter and polymeric light-emitting device using the same
    • 聚合物发光体和使用其的聚合物发光装置
    • JP2007277558A
    • 2007-10-25
    • JP2007101554
    • 2007-04-09
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • IKEHIRA HIDEYUKIKAMIOKA TAKAHIRODOI HIDEJIKURITA YASUYUKI
    • C09K11/06C07F15/00H01L51/50
    • PROBLEM TO BE SOLVED: To provide a new light emitter having a triplet light-emitting complex structure in the molecule and capable of forming a light-emitting layer by coating, a method for producing the light emitter, and a light-emitting device obtained by using the light emitter. SOLUTION: The polymeric light emitter has a polystyrene-reduced number-average molecular weight of 10 3 to 10 8 and has a metal complex structure exhibiting light emission from the excited triplet state in the main chain or in the side chain. The metal complex structure exhibiting light emission from the excited triplet state has a structure expressed by formula (6) (M is an atom having an atomic number of ≥50 and a metal capable of causing the interstate crossing between the singlet state and the triplet state by the spin-orbit interaction in the complex; Ar is a ligand which bonds M with at least one of nitrogen atom, oxygen atom, carbon atom, sulfur atom or phosphorus atom; and L is hydrogen atom, alkyl group, aryl group, heterocyclic ligand or the like). COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种在分子中具有三线态发光复合结构并能够通过涂布形成发光层的新的光发射体,制造发光体的方法和发光 通过使用光发射器获得的器件。 解决方案:聚合物发光体的聚苯乙烯换算的数均分子量为10 SP 3至10 SP 8,并且具有表现出来自 在主链或侧链中激发三线态。 表现出来自激发三重态的发光的金属络合物结构具有由式(6)表示的结构(M是原子序数≥50的原子和能够引起单重态和三重态之间的州际交叉的金属 通过络合物中的自旋轨道相互作用; Ar是将M与氮原子,氧原子,碳原子,硫原子或磷原子中的至少一个键合的配体; L是氢原子,烷基,芳基,杂环 配体等)。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Electron device
    • 电子设备
    • JP2009231313A
    • 2009-10-08
    • JP2008071110
    • 2008-03-19
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • KURITA YASUYUKITANAKA TOSHIHIKO
    • H01L51/40H01L29/86H01L51/05H01L51/42
    • Y02E10/549Y02P70/521
    • PROBLEM TO BE SOLVED: To provide an electron device which employs a conjugated system polymer as an active layer, allows easy industrial manufacturing and has high characteristics of carrier mobility or the like.
      SOLUTION: In the electron device composed by installing at least two electrodes in contact with the conjugated system polymer, the principal chain of the conjugated system polymer is oriented in the gap of at least two electrodes, and a hopping probability coefficient Z of the electron device indicated by an equation (1) Z=d
      min /L
      min is >1 and min is the number average molecular chain length of the conjugated system polymer, and d
      min is the minimum length among lengths of segments connecting one point of one of the two electrodes and one point of the other electrode.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种使用共轭体系聚合物作为活性层的电子器件,允许容易的工业制造并具有载流子迁移率等的高特性。 解决方案:在通过安装与共轭体系聚合物接触的至少两个电极组成的电子器件中,共轭体系聚合物的主链在至少两个电极的间隙中定向,跳跃概率系数Z为 由等式(1)表示的电子器件Z = d min / L min 为> 1和<10。 在该式(1)中,L min 是共轭体系聚合物的数均分子链长度,d min 是连接一个点的链段长度的最小长度 的两个电极中的一个和另一个电极的一个点。 版权所有(C)2010,JPO&INPIT
    • 8. 发明专利
    • Polymer illuminant and polymer luminous element using it
    • 聚合物照明和聚合物元素使用它
    • JP2008019443A
    • 2008-01-31
    • JP2007185416
    • 2007-07-17
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • IKEHIRA HIDEYUKIKAMIOKA TAKAHIRODOI HIDEJIKURITA YASUYUKI
    • C09K11/06C07D209/88C07D213/06C07D213/22C07D213/26C07F15/00C08G61/12C08L101/02H01L51/50H05B33/10
    • C08G2261/1526C08G2261/312C08G2261/3422C08G2261/374
    • PROBLEM TO BE SOLVED: To provide a novel illuminant which has a triplet photogenesis complex structure within its molecule and which can form an emitter layer by the application method, to provide a manufacturing method thereof and to provide a luminous element using the illuminant. SOLUTION: The polymer illuminant is characterized in that the number average molecular weight in terms of polystyrene is 10 3 -10 8 and in that the illuminant has a metal complex structure indicating the photogenesis from the triplet excited state at the side chain. In the polymer illuminant, the metal complex structure to indicate the photogenesis from the triplet excited state is represented by formula (6) wherein M denotes an atom having the atomic number 50 or more and denotes a metal to cause the intersystem crossing between the monoplet state and triplet state in the complex by spin-orbit interaction, Ar denotes a ligand to be bound with M using one or more of a nitrogen atom, an oxygen atom, a carbon atom, a sulfur atom and phosphorus atom, L denotes a hydrogen atom, an alkyl group, an aryl group or heterocyclic ring ligand and the like. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种在其分子内具有三线态光生复合结构并可通过应用方法形成发射极层的新型光源,以提供其制造方法并提供使用该光源的发光元件 。 解决方案:聚合物发光体的特征在于,以聚苯乙烯换算的数均分子量为10×SP 3,其中,发光体具有金属络合物 结构表示侧链上三重态激发态的光合作用。 在聚合物发光体中,表示来自三重态激发态的光生成的金属络合物结构由式(6)表示,其中M表示原子数为50以上的原子,表示导致单峰态之间的系间交叉的金属 并且通过自旋 - 轨道相互作用在络合物中的三重态,Ar表示使用氮原子,氧原子,碳原子,硫原子和磷原子中的一个或多个与M结合的配体,L表示氢原子 ,烷基,芳基或杂环配体等。 版权所有(C)2008,JPO&INPIT
    • 9. 发明专利
    • Simulation method of semiconductor device and simulation program thereof
    • 半导体器件的仿真方法及其仿真程序
    • JP2006302964A
    • 2006-11-02
    • JP2005118649
    • 2005-04-15
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • KURITA YASUYUKI
    • H01L29/00
    • PROBLEM TO BE SOLVED: To simply and highly accurately analyze electric characteristics for a semiconductor device containing a hetero interface.
      SOLUTION: In a simulation method of a semiconductor device containing a hetero interface in an information processing apparatus, a carrier current density in a vertical direction to the hetero interface in the vicinity of the hetero interface is calculated by weight-averaging a carrier current density represented based on a drift diffusion equation and a carrier current density represented based on a thermoelectronic emission condition or a thermoelectronic/field emission condition (S04, S05).
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:简单高效地分析含有异质界面的半导体器件的电特性。 解决方案:在信息处理设备中包含异质接口的半导体器件的仿真方法中,通过对载波的载波重量平均来计算在异质界面附近与异质界面垂直方向的载流子密度 基于漂移扩散方程和基于热电子发射条件或热电子/场发射条件表示的载流子密度表示的电流密度(S04,S05)。 版权所有(C)2007,JPO&INPIT
    • 10. 发明专利
    • Complex and method for producing the same
    • 复合体及其制造方法
    • JP2007182458A
    • 2007-07-19
    • JP2007101555
    • 2007-04-09
    • Sumitomo Chemical Co Ltd住友化学株式会社
    • IKEHIRA HIDEYUKIKAMIOKA TAKAHIRODOI HIDEJIKURITA YASUYUKI
    • C07F15/00
    • PROBLEM TO BE SOLVED: To provide a complex having a triple emission complex structure and used for producing new light emitters capable of forming light-emitting layers by coating methods. SOLUTION: This complex represented by the general formula (8) [L is H, an alkyl, an aryl, a heterocyclic ligand, carboxyl, a halogen atom, amide, imide, an alkoxy, an alkylmercapto, carbonyl ligand, an alkene ligand, an alkyne ligand, an amine ligand, an imine ligand, or the like; M is a metal which has an atomic number of ≥50 and can cause an intersystem crossing between a singlet state and a triplet state by a spin-orbit interaction in the present complex; Ar is a ligand to be bound to M with one or more of nitrogen atoms, oxygen atoms, carbon atoms, sulfur atoms or phosphorus atoms; (m) is an integer of 1 to 5; (o) is an integer of 0 to 5; X is a halogen atom, an arylsulfonyloxy, or an alkylsulfonyloxy]. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供具有三重发射复合结构的复合物,并用于制备能够通过涂布方法形成发光层的新型发光体。 解决方案:由通式(8)表示的络合物[L是H,烷基,芳基,杂环配体,羧基,卤素原子,酰胺,酰亚胺,烷氧基,烷基巯基,羰基配体, 烯烃配体,炔配体,胺配体,亚胺配体等; M是原子序数≥50的金属,并且可以通过本发明复合物中的自旋轨道相互作用而引起单重态和三态态之间的系间交叉; Ar是与M键合的配体,其中一个或多个氮原子,氧原子,碳原子,硫原子或磷原子; (m)为1〜5的整数。 (o)为0〜5的整数, X是卤素原子,芳基磺酰氧基或烷基磺酰氧基]。 版权所有(C)2007,JPO&INPIT