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    • 5. 发明专利
    • Memory element, memory device, and method of operating memory device
    • 存储器元件,存储器件以及操作存储器件的方法
    • JP2011187925A
    • 2011-09-22
    • JP2010261517
    • 2010-11-24
    • Sony Corpソニー株式会社
    • OBA KAZUHIROMIZUGUCHI TETSUYAYASUDA SHUICHIROARAYA KATSUHISASHIMUTA MASAYUKIKOUCHIYAMA AKIRAOGASAWARA MAYUMI
    • H01L27/105H01L45/00H01L49/00
    • H01L45/145G11C11/16G11C11/161G11C13/0011H01L27/2436H01L27/2472H01L45/085H01L45/1233H01L45/1253H01L45/1266H01L45/146H01L45/1633
    • PROBLEM TO BE SOLVED: To provide a memory element capable of improving repetition durability, and to provide a memory device. SOLUTION: A resistance change layer 22 contains aluminum oxide (AlOx) and transition metal oxide having low resistance relative to that of the aluminum oxide. Specifically, the resistance change layer 22 has a structure where a first layer 22A formed of the transition metal oxide and a second layer 22B containing the aluminum oxide as a main constituent are laminated in an order from the side of a lower electrode 10. When a positive voltage is applied to this element, voltage bias is hardly applied to the first layer 22A. Thereby, even when the element comes into a write state (low-resistance state), the first layer 22A is not reduced and the oxide film is kept formed on the lower electrode 10. Accordingly, an unnecessary oxidation reaction between a chalcogen element included in an ion source layer 21 and the lower electrode 10 is prevented from occurring with repetition of write and erasure. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够提高重复耐久性的存储元件,并提供存储器件。 解决方案:电阻变化层22包含相对于氧化铝具有低电阻的氧化铝(AlO x)和过渡金属氧化物。 具体而言,电阻变化层22具有从下部电极10的侧面依次层叠由过渡金属氧化物形成的第一层22A和含有氧化铝作为主要成分的第二层22B的结构。当 对该元件施加正电压,几乎不向第一层22A施加电压偏置。 因此,即使当元件进入写入状态(低电阻状态)时,第一层22A也不会减小,并且氧化膜保持形成在下部电极10上。因此,包含在第二层22A中的硫属元素之间的不必要的氧化反应 防止重复写入和擦除而发生离子源层21和下部电极10。 版权所有(C)2011,JPO&INPIT
    • 7. 发明专利
    • Magnetic recording medium
    • 磁记录介质
    • JP2003006836A
    • 2003-01-10
    • JP2001185030
    • 2001-06-19
    • Sony Corpソニー株式会社
    • OGASAWARA MAYUMITAKEDA TSUTOMUSAGANE MASAYOSHI
    • C10M105/54C10M105/58C10M107/38C10N30/00C10N40/18G11B5/72G11B5/725G11B5/84
    • PROBLEM TO BE SOLVED: To provide a magnetic recording medium, in which the lubrication effect lasts for a long period of time, and in which the excellent running property and the durability are realized by enhancing the close adhesion between a protective film and a lubricant.
      SOLUTION: The magnetic recording medium 1 is provided with a magnetic layer 3 on a nonmagnetic supporting body 2, the protective film 4, and the lubricant 5, in this order. The surface of the protective film 4 (the contact surface with the lubricant 5) is treated in a plasma atmosphere of an inert gas. The lubricant 5 held on the protective film 4 includes a compound of HOOC-CF
      2 (OC
      2 F
      4 )
      p (OCF
      2 )
      q OCF
      2 -COOH which is the bifunctional perfluoropolyether having carboxyl groups at the terminals and a octadecylamine (NH
      2 C
      18 H
      37 ), for example, and C
      9 F
      19 -COOC
      18 H
      37 .
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供润滑效果持续很长时间的磁记录介质,并且通过增强保护膜和润滑剂之间的紧密粘合力来实现优异的流动性和耐久性。 解决方案:磁记录介质1依次在非磁性支撑体2,保护膜4和润滑剂5上设置有磁性层3。 保护膜4的表面(与润滑剂5的接触面)在惰性气体的等离子体气氛中进行处理。 保持在保护膜4上的润滑剂5包括HOOC-CF 2(OC 2 F 4)p(OCF 2)q OCF 2 -COOH,其末端具有羧基的双功能全氟聚醚和十八烷基胺(NH 2 C 18 H 37) ,和C9 F19 -COOC18 H37。