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1. 发明专利

JP2004172564A Annealed wafer and its manufacturing method 审中-公开
公开(公告)号：JP2004172564A
公开(公告)日：2004-06-17
申请号：JP2003057633
申请日：2003-03-04
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide an annealed wafer of high quality wherein Grown-in defect is eliminated, an element active region is made non-defective and slip defect is not generated even in high temperature heat treatment forming a high density oxygen defect layer in a silicon wafer, and its manufacturing method. SOLUTION: The manufacturing method of an annealed wafer comprises a step for preheating a silicon wafer at about 500°C, a temperature-up step for raising the temperature in a heat treatment furnace to about 1,100°C or higher under atmosphere of an inert gas comprising argon gas or mixture gas of hydrogen gas and argon gas or the like, a heat treatment step for carrying out heat treatment keeping a fixed temperature of 1,100°C or higher for a fixed period of time and a temperature-down step for lowering the temperature to about 500°C. In the method, the initial oxygen concentration of the silicon wafer has a range of 11 to 14 ppma, the temperature-up and temperature-down velocity in the temperature-up step and the temperature-down step is 1 to 14°C/min in a temperature interval of 500 to 1,100°C, especially the temperature-up and temperature-down velocity is 1 to 7°C/min. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2005322875A Silicon wafer and method for manufacturing same 审中-公开
标题翻译：硅晶片及其制造方法
公开(公告)号：JP2005322875A
公开(公告)日：2005-11-17
申请号：JP2004286114
申请日：2004-09-30
申请人： Siltron Inc , シルトロンインク
发明人： YOON SUNG-HO , BAE SO IK , MUN YOUNG HEE
IPC分类号： H01L21/322 , C30B15/00 , C30B33/00 , H01L21/02
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer in which slip generation in a high temperature process is perfectly controlled, and uniform and sufficient DZ and COP free region are formed as the active region of an element, and a BMD with high density is secured in a bulk region; and to provide a method for manufacturing this silicon wafer.
SOLUTION: This silicon wafer having the front face, the rear face, the peripheral edge and a region between the front face and the rear face includes a first DZ without any COP (Crystal Originated Particle) defect formed from the surface to described depth of the front face of the wafer, a second DZ without any COP defect formed from the surface to described depth of the rear face of the wafer, and a bulk region formed between the first DZ and the second DZ with distribution in which the concentration profile of BMD (Bulk Micro Defect) is maintained constantly from the front face to rear face directions of the wafer. The silicon wafer has nitride concentration ranging from 1E12 atoms/cm
3 to 1E14 atoms/cm
3 .
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种硅晶片，其中高温工艺中的滑移产生被完全控制，并且形成均匀和足够的DZ和COP自由区域作为元件的有源区域，并且具有高的BMD 密度固定在大块区域; 并提供一种制造该硅晶片的方法。解决方案：具有前表面，后表面，周边边缘以及前表面和后表面之间的区域的硅晶片包括第一DZ，没有从所述表面形成的任何COP（晶体起始颗粒）缺陷晶片前表面的深度，从表面到晶片背面的描述深度形成的没有任何COP缺陷的第二DZ以及形成在第一DZ和第二DZ之间的体积区域，其中浓度 BMD（Bulk Micro Defect）的轮廓从晶片的正面到背面方向不断地保持。硅晶片的氮化物浓度范围为1E12原子/厘米3（SP 3）至1E 14原子/ cm 3。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2007318160A Silicon wafer 审中-公开
标题翻译：硅胶
公开(公告)号：JP2007318160A
公开(公告)日：2007-12-06
申请号：JP2007175211
申请日：2007-07-03
申请人： Siltron Inc , シルトロンインク
发明人： YOON SUNG-HO , BAE SO IK , MUN YOUNG HEE
IPC分类号： H01L21/322 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/02
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer in which slip generation in a high temperature process is perfectly controlled, and uniform and sufficient DZ and COP free region are formed as the active region of an element, and a BMD with high density is secured in a bulk region.
SOLUTION: This silicon wafer has a front face, a rear face, a peripheral edge and a region between the front face and the rear face as a typical configuration. The silicon wafer has nitride concentration ranging from 1E12 atoms/cm
3 to 1E14 atoms/cm
3 . A region formed from the surface of the front face and the rear face to at least the depth of 8 μm is measured, after the wafer is grinded to a given depth. The number of LPDN (Light Point Defect Non-cleanable) about a defect having a size of 0.065 μm or more, is 20 pieces or less per wafer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种硅晶片，其中高温工艺中的滑移产生被完全控制，并且形成均匀和足够的DZ和COP自由区域作为元件的有源区域，并且具有高的BMD 密度固定在大块区域。作为典型的结构，该硅晶片具有前表面，后表面，周边边缘以及正面和背面之间的区域。硅晶片的氮化物浓度范围为1E12原子/厘米3（SP 3）至1E 14原子/ cm 3。在将晶片磨削至给定深度之后，测量从前表面和后表面至少形成8μm深度的区域。关于尺寸为0.065μm以上的缺陷的LPDN（光点缺陷不可清洗）的数量为每片晶片20片以下。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2004072066A Method of manufacturing annealed wafer 审中-公开
标题翻译：制造退火波的方法
公开(公告)号：JP2004072066A
公开(公告)日：2004-03-04
申请号：JP2002381755
申请日：2002-12-27
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3221
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an annealed wafer for manufacturing a high-quality annealed wafer in which crystal defects do not exist in the silicon wafer and boron concentration is constant yielding uniform specific resistivity, for giving high heat treatment efficiency, and for reducing the manufacturing cost.
SOLUTION: The method contains a first heat treatment step in which a silicon wafer is preheated at approximately 500°C in a heat treatment furnace of a gas atmosphere of any one of argon gas, nitrogen gas, or an inert gas containing these, a second heat treatment step in which the wafer is heat treated by changing the gas atmosphere in the heat treatment furnace to 100% hydrogen gas atmosphere to remove adsorbed boron on the surface of the silicon wafer while raising the temperature to a constant temperature of approximately 850°C to 1150°C, a third heat treatment step in which the gas atmosphere in the heat treatment furnace to 100% argon atmosphere, and after the temperature is raised to approximately 1200°C, the wafer is heat treated keeping the temperature at that value for approximately 1 hour, and a temperature lowering step in which the temperature in the heat treatment furnace is lowered down to approximately 500°C or lower.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种制造用于制造硅晶片中不存在晶体缺陷的高质量退火晶片的退火晶片的方法，并且硼浓度恒定，产生均匀的电阻率，用于产生高热处理效率和降低制造成本。解决方案：该方法包括第一热处理步骤，其中在氩气，氮气或含有这些的气体的惰性气体中的任何一种的气体气氛的热处理炉中，将硅晶片预热约500℃ ，第二热处理步骤，其中通过将热处理炉中的气体气氛改变为100％氢气气氛来对晶片进行热处理，以除去硅晶片表面上的吸附的硼，同时将温度升高至大约的恒定温度 850℃至1150℃，第三热处理步骤，其中将热处理炉中的气体气氛加入到100％氩气氛中，并且在温度升高至约1200℃之后，将晶片进行热处理，将温度保持在该值约1小时，以及将热处理炉中的温度降低到约500℃以下的降温步骤。版权所有（C）2004，JPO

5. 发明专利

JP2007329488A Manufacturing method of silicon wafer 审中-公开
标题翻译：硅波的制造方法
公开(公告)号：JP2007329488A
公开(公告)日：2007-12-20
申请号：JP2007175212
申请日：2007-07-03
申请人： Siltron Inc , シルトロンインク
发明人： YOON SUNG-HO , BAE SO IK , MUN YOUNG HEE
IPC分类号： H01L21/322 , C30B15/00 , C30B29/06 , C30B33/00 , H01L21/02
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer by which occurrence of the slip due to high temperature process is perfectly controlled while an active region of element is provided with a uniform and sufficient DZ and COP-free region, and further a bulk region has a high-density BMD.
SOLUTION: This method includes: a step for maintaining a silicon wafer at a first temperature in an inert gas atmosphere while a specified time to preheat; a step for raising to a second temperature higher than the first temperature at a first pace of temperature rise in a hydrogen atmosphere; a step for raising to a third temperature higher than the second temperature at a second pace of temperature rise smaller than the first pace of temperature rise; a step for raising to a fourth temperature higher than the third temperature at a third pace of temperature rise in the inert gas atmosphere; and a step for heat-treating at the high temperature while keeping at the fourth temperature. The number of LPDN (Light Point Defects Non-cleanable) relating defects having the size of 0.065 μm or more which is measured after polishing the wafer to a specified depth descending the temperature to the first temperature is 20 or less per wafer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造硅晶片的方法，其中通过在元件的有源区域具有均匀且足够的DZ和无COP区域的情况下完美地控制由于高温处理而产生的滑移，并且进一步的体区具有高密度BMD。解决方案：该方法包括：在预定时间内将硅晶片保持在惰性气体气氛中的第一温度的步骤; 在氢气氛中以第一升温速度升高到高于第一温度的第二温度的步骤; 以比第一温度升高步长高的第二温度升高升高到第二温度的步骤; 在惰性气体气氛中以第三速度升高升至高于第三温度的第四温度的步骤; 以及在保持在第四温度下在高温下进行热处理的步骤。在将晶片抛光至从第一温度下降到特定深度之后测量的尺寸为0.065μm以上的尺寸为0.065μm以上的LPDN（光点缺陷不可清洗）的数量为每个晶片20个以下。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2003282577A Silicon semiconductor wafer and manufacturing method therefor 审中-公开
标题翻译：硅半导体晶片及其制造方法
公开(公告)号：JP2003282577A
公开(公告)日：2003-10-03
申请号：JP2002327248
申请日：2002-11-11
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： C30B5/00 , C30B29/06 , C30B33/00 , H01L21/02 , H01L21/322 , H01L21/324 , H01L21/76 , H01L29/167
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： PROBLEM TO BE SOLVED: To form a wafer having no COP defect from the surface toward the predetermined depth of the same and BMD nuclei which exist in a lower region.
SOLUTION: The wafer is preheated to about 500°C in a diffusion furnace under an atmosphere of Ar, N
2 or an inert gas containing these gases, and thereafter, the temperature of the wafer is increased under an atmosphere of Ar or an inert gas containing the gas at a rate of 50-70°C/min at a temperature of 500-800°C, 50-10°C/min at 800-900°C, 10-0.5°C/min at 900-1,000°C and 0.1-5°C/min at 1,000-1,250°C, then, a high temperature is maintained for 1-120 min. at 1,200-1,250°C. Thereafter, the temperature is reduced under the atmosphere of Ar, N
2 or an inert gas containing these gases at a rate of 0.1-0.5°C/min at a temperature of 1,250-1,000°C, 10-0.5°C/min at 1,000-900°C, 50-10°C/min at 900-800°C and 50-70°C/min at 800-500°C.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：从表面向其预定深度形成没有COP缺陷的晶片，并且存在于下部区域中的BMD核。
解决方案：在Ar，N 2 或含有这些气体的惰性气体下，在扩散炉中将晶片预热至约500℃，此后晶片的温度为在500-800℃的温度下，在800-900℃的温度为50-10℃/分钟的条件下，在Ar气氛或含有气体的惰性气体中以50-70℃/ 在900-1,000℃下为0.5℃/分钟，在1,000-1,250℃下为0.1-5℃/分钟，然后保持高温保持1-120分钟。在1,200-1,250℃。之后，在温度1250〜1000℃，温度1250〜1000℃，温度12〜10℃，温度降低的条件下，在Ar，N，S，2气氛下，含有这些气体的惰性气体以0.1-0.5℃/ 在1000-900℃时为-0.5℃/ min，在900-800℃为50-10℃/ min，在800-500℃为50-70℃/ min。版权所有（C）2004，JPO

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