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1. 发明专利

JP2004172564A Annealed wafer and its manufacturing method 审中-公开
公开(公告)号：JP2004172564A
公开(公告)日：2004-06-17
申请号：JP2003057633
申请日：2003-03-04
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide an annealed wafer of high quality wherein Grown-in defect is eliminated, an element active region is made non-defective and slip defect is not generated even in high temperature heat treatment forming a high density oxygen defect layer in a silicon wafer, and its manufacturing method. SOLUTION: The manufacturing method of an annealed wafer comprises a step for preheating a silicon wafer at about 500°C, a temperature-up step for raising the temperature in a heat treatment furnace to about 1,100°C or higher under atmosphere of an inert gas comprising argon gas or mixture gas of hydrogen gas and argon gas or the like, a heat treatment step for carrying out heat treatment keeping a fixed temperature of 1,100°C or higher for a fixed period of time and a temperature-down step for lowering the temperature to about 500°C. In the method, the initial oxygen concentration of the silicon wafer has a range of 11 to 14 ppma, the temperature-up and temperature-down velocity in the temperature-up step and the temperature-down step is 1 to 14°C/min in a temperature interval of 500 to 1,100°C, especially the temperature-up and temperature-down velocity is 1 to 7°C/min. COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2004072066A Method of manufacturing annealed wafer 审中-公开
标题翻译：制造退火波的方法
公开(公告)号：JP2004072066A
公开(公告)日：2004-03-04
申请号：JP2002381755
申请日：2002-12-27
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： H01L21/322 , H01L21/324
CPC分类号： H01L21/324 , H01L21/3221
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an annealed wafer for manufacturing a high-quality annealed wafer in which crystal defects do not exist in the silicon wafer and boron concentration is constant yielding uniform specific resistivity, for giving high heat treatment efficiency, and for reducing the manufacturing cost.
SOLUTION: The method contains a first heat treatment step in which a silicon wafer is preheated at approximately 500°C in a heat treatment furnace of a gas atmosphere of any one of argon gas, nitrogen gas, or an inert gas containing these, a second heat treatment step in which the wafer is heat treated by changing the gas atmosphere in the heat treatment furnace to 100% hydrogen gas atmosphere to remove adsorbed boron on the surface of the silicon wafer while raising the temperature to a constant temperature of approximately 850°C to 1150°C, a third heat treatment step in which the gas atmosphere in the heat treatment furnace to 100% argon atmosphere, and after the temperature is raised to approximately 1200°C, the wafer is heat treated keeping the temperature at that value for approximately 1 hour, and a temperature lowering step in which the temperature in the heat treatment furnace is lowered down to approximately 500°C or lower.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种制造用于制造硅晶片中不存在晶体缺陷的高质量退火晶片的退火晶片的方法，并且硼浓度恒定，产生均匀的电阻率，用于产生高热处理效率和降低制造成本。解决方案：该方法包括第一热处理步骤，其中在氩气，氮气或含有这些的气体的惰性气体中的任何一种的气体气氛的热处理炉中，将硅晶片预热约500℃ ，第二热处理步骤，其中通过将热处理炉中的气体气氛改变为100％氢气气氛来对晶片进行热处理，以除去硅晶片表面上的吸附的硼，同时将温度升高至大约的恒定温度 850℃至1150℃，第三热处理步骤，其中将热处理炉中的气体气氛加入到100％氩气氛中，并且在温度升高至约1200℃之后，将晶片进行热处理，将温度保持在该值约1小时，以及将热处理炉中的温度降低到约500℃以下的降温步骤。版权所有（C）2004，JPO

3. 发明专利

JP2003282577A Silicon semiconductor wafer and manufacturing method therefor 审中-公开
标题翻译：硅半导体晶片及其制造方法
公开(公告)号：JP2003282577A
公开(公告)日：2003-10-03
申请号：JP2002327248
申请日：2002-11-11
申请人： Siltron Inc , シルトロンインク
发明人： MUN YOUNG-HEE , KIM GUN , YOON SUNG-HO
IPC分类号： C30B5/00 , C30B29/06 , C30B33/00 , H01L21/02 , H01L21/322 , H01L21/324 , H01L21/76 , H01L29/167
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225
摘要： PROBLEM TO BE SOLVED: To form a wafer having no COP defect from the surface toward the predetermined depth of the same and BMD nuclei which exist in a lower region.
SOLUTION: The wafer is preheated to about 500°C in a diffusion furnace under an atmosphere of Ar, N
2 or an inert gas containing these gases, and thereafter, the temperature of the wafer is increased under an atmosphere of Ar or an inert gas containing the gas at a rate of 50-70°C/min at a temperature of 500-800°C, 50-10°C/min at 800-900°C, 10-0.5°C/min at 900-1,000°C and 0.1-5°C/min at 1,000-1,250°C, then, a high temperature is maintained for 1-120 min. at 1,200-1,250°C. Thereafter, the temperature is reduced under the atmosphere of Ar, N
2 or an inert gas containing these gases at a rate of 0.1-0.5°C/min at a temperature of 1,250-1,000°C, 10-0.5°C/min at 1,000-900°C, 50-10°C/min at 900-800°C and 50-70°C/min at 800-500°C.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：从表面向其预定深度形成没有COP缺陷的晶片，并且存在于下部区域中的BMD核。
解决方案：在Ar，N 2 或含有这些气体的惰性气体下，在扩散炉中将晶片预热至约500℃，此后晶片的温度为在500-800℃的温度下，在800-900℃的温度为50-10℃/分钟的条件下，在Ar气氛或含有气体的惰性气体中以50-70℃/ 在900-1,000℃下为0.5℃/分钟，在1,000-1,250℃下为0.1-5℃/分钟，然后保持高温保持1-120分钟。在1,200-1,250℃。之后，在温度1250〜1000℃，温度1250〜1000℃，温度12〜10℃，温度降低的条件下，在Ar，N，S，2气氛下，含有这些气体的惰性气体以0.1-0.5℃/ 在1000-900℃时为-0.5℃/ min，在900-800℃为50-10℃/ min，在800-500℃为50-70℃/ min。版权所有（C）2004，JPO

4. 发明专利

JP2002198375A METHOD OF HEAT TREATMENT OF SEMICONDUCTOR WAFER AND SEMICONDUCOR WAFER FABRICATED THERBY 审中-公开
公开(公告)号：JP2002198375A
公开(公告)日：2002-07-12
申请号：JP2001305633
申请日：2001-10-01
申请人： SILTRON INC
发明人： MUN YOUNG-HEE
IPC分类号： C30B29/06 , H01L21/208 , H01L21/322 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a method for fabricating a high quality wafer that has no thermal damage by high temperature heat treatment and efficiently removes the induced defects affecting the yield of a semiconductor device, impurities on process, and BMD presented in the active layer of a device. SOLUTION: In a single crystal growth, and ingot is formed by moving an OiSF ring from the center portion of the single crystal growth axis to a peripheral portion and extending the B and C regions. Then, the wafer formed from the ingot is carried out a first step heat treatment at a high temperature and a second step low temperature rapid heat treatment.

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