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1. 发明专利

JP2013236544A Switching power supply 有权
标题翻译：切换电源
公开(公告)号：JP2013236544A
公开(公告)日：2013-11-21
申请号：JP2013174944
申请日：2013-08-26
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , WAKAO SHUJI , SHIBATA AKIHIDE , IWATA HIROSHI
IPC分类号： H02M7/5387 , H02M1/08 , H02M3/155 , H02M3/28 , H02M7/537
CPC分类号： Y02T10/644 , Y02T10/7005 , Y02T10/7022 , Y02T10/7225 , Y02T10/7241 , Y02T90/127
摘要： PROBLEM TO BE SOLVED: To provide a highly efficient and low cost switching power supply.SOLUTION: An inverter includes high voltage resistant transistors 1, 3, 5, 7 and low voltage resistant transistors 2, 4, 6, 8. The transistors 1-8 respectively include parasitic diodes 1a-8a. For example, when a current is made to flow from an output node N1 to an output terminal 22, the low voltage resistant transistor 2 is switched off, whereas the high voltage resistant transistor 1 is switched on by means of a power supply which applies a higher voltage than the voltage of the output node N1 to the gate of the high voltage resistant transistor 1. Because a current hardly flows in the parasitic diode 1a of the high voltage resistant transistor 1, a recovery current of the high voltage resistant transistor 1 is small.
摘要翻译：要解决的问题：提供高效且低成本的开关电源。解决方案：逆变器包括耐高压晶体管1,3,5,7和耐低压晶体管2,4,6,8。晶体管1- 8分别包括寄生二极管1a-8a。例如，当使电流从输出节点N1流向输出端子22时，低电压晶体管2被断开，而耐高压晶体管1通过施加电压的电源来接通电压高于输出节点N1的电压到高耐压晶体管1的栅极。由于电流几乎不流过耐高压晶体管1的寄生二极管1a，所以耐高压晶体管1的恢复电流为小。

2. 发明专利

JP2013110928A Semiconductor device, inverter using the same, converter using the same, and power conversion apparatus using the same 有权
标题翻译：使用其的半导体器件，逆变器，使用该转换器的转换器和使用其的功率转换装置
公开(公告)号：JP2013110928A
公开(公告)日：2013-06-06
申请号：JP2011256182
申请日：2011-11-24
申请人： Sharp Corp , シャープ株式会社
发明人： WAKAO SHUJI , KOMIYA KENJI , KATAOKA KOTARO , NOMURA MASARU , OTA YOSHIJI , IWATA HIROSHI
IPC分类号： H02M1/08 , H01L21/822 , H01L27/04 , H02M3/155
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with a small variation in characteristics.SOLUTION: A semiconductor device includes a first switching element (a high-withstand-voltage transistor Q1) and a second switching element (a resistive element R1 and a low-withstand-voltage transistor Q2) that are connected in series between nodes N1 and N2, and a third switching element (a low-withstand-voltage transistor Q3) that is connected in parallel to the second switching element. When the transistor Q2 is turned on, the transistor Q1 turns on, and then when the transistor Q3 is turned on, a conductive state is established between the nodes N1 and N2. As a result, the first switching element having a high on-resistance value is turned on, and then the high-withstand-voltage transistor Q1 is turned on, thereby reducing the variation in turn-on time.
摘要翻译：要解决的问题：提供一种特性变化小的半导体器件。解决方案：半导体器件包括串联连接在节点之间的第一开关元件（高耐压晶体管Q1）和第二开关元件（电阻元件R1和低耐压晶体管Q2） N1和N2，以及与第二开关元件并联连接的第三开关元件（低耐压晶体管Q3）。当晶体管Q2导通时，晶体管Q1导通，然后当晶体管Q3导通时，在节点N1和N2之间建立导通状态。结果，具有高导通电阻值的第一开关元件导通，然后高耐压晶体管Q1导通，从而减小导通时间的变化。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2009122456A Semiconductor device, display device, and portable equipment 有权
标题翻译：半导体器件，显示器件和便携式设备
公开(公告)号：JP2009122456A
公开(公告)日：2009-06-04
申请号：JP2007297047
申请日：2007-11-15
申请人： Sharp Corp , シャープ株式会社
发明人： SHIOMI TAKESHI , IWATA HIROSHI , WAKAO SHUJI
IPC分类号： G09F9/00 , G02F1/13357
CPC分类号： H01L27/12 , B82Y10/00 , H01L27/11526 , H01L27/11573 , H01L29/78633
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory, and preventing storage information from being lost when irradiated with light. SOLUTION: The semiconductor device includes: an insulating substrate, the nonvolatile memory formed on the insulating substrate and having a memory storage part, and a light shielding body covering the memory storage part, provided on at least one of the upper side and lower side of the memory storage part. The at least one light shielding body is provided so that the degree of projection defined by (the length of the light shielding body protruded from the memory storage part)/(the distance between the light shielding body and the memory storage part) is 0.1 or more. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有非易失性存储器的半导体器件，并且防止在用光照射时存储信息丢失。解决方案：半导体器件包括：绝缘基板，形成在绝缘基板上并具有存储器存储部分的非易失性存储器和覆盖存储器存储部分的遮光体，设置在上侧和存储器部分的下侧。所述至少一个遮光体被设置为使得由遮光体从存储器存储部分突出的长度/遮光体和存储器存储部分之间的距离定义的突出度为0.1或更多。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2012227966A Semiconductor device, and inverter, converter and power conversion device using the same 有权
公开(公告)号：JP2012227966A
公开(公告)日：2012-11-15
申请号：JP2012175111
申请日：2012-08-07
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , WAKAO SHUJI , KATAOKA KOTARO , NOMURA MASARU , OTA YOSHIJI , IWATA HIROSHI
IPC分类号： H03K17/30 , H02M1/08 , H02M3/155 , H03K17/296 , H03K17/693 , H03K17/695
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that has a small variation in turn-on time.SOLUTION: The semiconductor device includes: a high breakdown voltage, high Gm transistor Q1 and a low breakdown voltage, low Gm transistor Q2 connected in series between nodes N1, N2; and a low breakdown voltage, high Gm transistor Q3 connected in parallel with the transistor Q2. When the transistor Q2 is turned on, the transistor Q1 is turned on, and when the transistor Q3 is next turned on, the nodes N1, N2 become conductive. Turning on the low breakdown voltage transistor Q2 to turn on the high breakdown voltage transistor Q1 reduces a variation in turn-on time.

5. 发明专利

JP2013085448A Switching power supply apparatus, and inverter, converter, air conditioner, solar power controller, and motor vehicle using the apparatus 有权
标题翻译：切换电源设备，逆变器，转换器，空调，太阳能电源控制器和电机使用设备
公开(公告)号：JP2013085448A
公开(公告)日：2013-05-09
申请号：JP2012144566
申请日：2012-06-27
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , WAKAO SHUJI , SHIBATA AKIHIDE , IWATA HIROSHI
IPC分类号： H02M3/155 , H02M3/28 , H02M7/48 , H02M7/5387
CPC分类号： H02M1/088 , H02M3/1582 , H02M3/1588 , H02M7/5387 , H02M2001/0051 , Y02B70/1466 , Y02T10/7258
摘要： PROBLEM TO BE SOLVED: To provide a switching power supply apparatus capable of achieving high efficiency and cost reduction.SOLUTION: The inverter includes high breakdown voltage transistors 1, 3, 5, 7 and low breakdown voltage transistors 2, 4, 6, 8. The transistors 1-8 include parasitic diodes 1a-8a. For example, a voltage higher than a threshold voltage is applied to gates of the transistors 1, 3, 5, 7, the transistors 2, 8 are turned off, the transistor 6 is turned on and the transistor 4 turned on/off. Few electric currents run through the parasitic diodes 1a, 3a of the high breakdown voltage transistors 1, 3; therefore, recovery currents of the high breakdown voltage transistors 1, 3 are small.
摘要翻译：解决的问题：提供能够实现高效率和降低成本的开关电源装置。
解决方案：逆变器包括高击穿电压晶体管1,3,5,7和低击穿电压晶体管2,4,6,8。晶体管1-8包括寄生二极管1a-8a。例如，将高于阈值电压的电压施加到晶体管1,3,5,7的栅极，晶体管2,8截止，晶体管6导通，晶体管4导通/截止。几个电流流过高击穿电压晶体管1,3的寄生二极管1a，3a; 因此，高击穿电压晶体管1,3的恢复电流很小。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010272147A Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：JP2010272147A
公开(公告)日：2010-12-02
申请号：JP2009120531
申请日：2009-05-19
申请人： Sharp Corp , シャープ株式会社
发明人： KOTAKI HIROSHI , OTA KEIJI , WAKAO SHUJI
IPC分类号： G11C13/00
CPC分类号： G11C7/02 , G11C7/12 , G11C13/00 , G11C13/0004 , G11C13/0026 , G11C13/0033 , G11C13/0069 , G11C2013/009 , G11C2213/79 , G11C2213/82
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device hat suppresses write disturbance without increasing a cell array area. SOLUTION: The semiconductor storage device comprises: a memory cell array 100 configured by arranging in matrix a plurality of memory cells each formed by connecting a two-terminal type storage element R and a selection transistor Q; a first voltage applying circuit 101 which applies a rewriting voltage pulse to the first bit line; and a second voltage applying circuit 102 which applies a precharge voltage to the first and second bit lines. In rewriting a memory cell, after the first voltage applying circuit 101 precharges both ends of the memory cell with the same voltage, the second voltage applying circuit 102 applies the rewriting voltage pulse via the first bit line directly connected with the selection transistor. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种半导体存储装置，可以在不增加单元阵列面积的情况下抑制写入干扰。解决方案：半导体存储装置包括：存储单元阵列100，其通过以矩阵方式布置多个存储单元，每个存储单元均通过连接两端型存储元件R和选择晶体管Q而形成; 第一电压施加电路101，向第一位线施加重写电压脉冲; 以及向第一和第二位线施加预充电电压的第二电压施加电路102。在重写存储单元时，在第一电压施加电路101以相同的电压对存储单元的两端进行预充电之后，第二电压施加电路102经由与选择晶体管直接连接的第一位线施加重写电压脉冲。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012227919A Semiconductor device, and inverter, converter and power conversion device using the same 有权
标题翻译：半导体器件及其逆变器，转换器和功率转换器件
公开(公告)号：JP2012227919A
公开(公告)日：2012-11-15
申请号：JP2012076613
申请日：2012-03-29
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , WAKAO SHUJI , KATAOKA KOTARO , NOMURA MASARU , OTA YOSHIJI , IWATA HIROSHI
IPC分类号： H03K17/12 , H02M3/155 , H03K17/687
CPC分类号： H03K17/302 , H02M1/088 , H02M3/158 , H03K17/102 , H03K17/122 , H03K17/145
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that has a small variation in turn-on time.SOLUTION: The semiconductor device includes: a high breakdown voltage, high Gm transistor Q1 and a low breakdown voltage, low Gm transistor Q2 connected in series between nodes N1, N2; and a low breakdown voltage, high Gm transistor Q3 connected in parallel with the transistor Q2. When the transistor Q2 is turned on, the transistor Q1 is turned on, and when the transistor Q3 is next turned on, the nodes N1, N2 become conductive. Turning on the low breakdown voltage transistor Q2 to turn on the high breakdown voltage transistor Q1 reduces a variation in turn-on time.
摘要翻译：要解决的问题：提供一种具有小的接通时间变化的半导体器件。解决方案：半导体器件包括：高击穿电压，高Gm晶体管Q1和低击穿电压，串联在节点N1，N2之间的低Gm晶体管Q2; 和低击穿电压，与晶体管Q2并联连接的高Gm晶体管Q3。当晶体管Q2导通时，晶体管Q1导通，当晶体管Q3接通时，节点N1，N2变为导通状态。接通低击穿电压晶体管Q2以导通高击穿电压晶体管Q1减小接通时间的变化。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010098054A Memory element, semiconductor storage device, display device, and portable electronic equipment 审中-公开
标题翻译：存储元件，半导体存储器件，显示器件和便携式电子设备
公开(公告)号：JP2010098054A
公开(公告)日：2010-04-30
申请号：JP2008266455
申请日：2008-10-15
申请人： Sharp Corp , シャープ株式会社
发明人： WAKAO SHUJI , KATAOKA KOTARO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide: a nonvolatile memory element which reduces a leakage current due to an end part of a channel region, is operated with a low voltage and has stable memory characteristics (write, erase, and read); a semiconductor storage device including the memory element; a display device; and portable electronic equipment including the display device. SOLUTION: A memory element 1 includes: a support substrate 10; a semiconductor layer 11 which is laminated on the support substrate 10 and has a source region 11s and a drain region 11d facing each other; a channel region 11c formed in the semiconductor layer 11 between the source region 11s and the drain region 11d; a first gate insulating film 13 which is laminated on the channel region 11c and has a charge storage function; a first gate electrode 17 covering the first gate insulating film 13; and a second gate insulating film 15 which covers an end part 11ct in a channel width direction Dcw of the channel region 11c and has a film thickness Tg2 different from a film thickness Tg1 of the first gate insulating film 13. The first gate electrode 17 covers the second gate insulating film 15. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决方案：提供：减少由于沟道区域的端部引起的漏电流的非易失性存储元件以低电压工作并具有稳定的存储特性（写入，擦除和读取）; 包括所述存储元件的半导体存储装置; 显示装置; 以及包括显示装置的便携式电子设备。存储元件1包括：支撑基板10; 层叠在支撑基板10上并具有彼此面对的源极区域11s和漏极区域11d的半导体层11; 形成在源极区域11s和漏极区域11d之间的半导体层11中的沟道区域11c; 第一栅极绝缘膜13，其层叠在沟道区域11c上并具有电荷存储功能; 覆盖第一栅极绝缘膜13的第一栅电极17; 以及第二栅极绝缘膜15，其覆盖沟道区域11c的沟道宽度方向Dcw的端部11ct，并且具有与第一栅极绝缘膜13的膜厚度Tg1不同的膜厚度Tg2。第一栅极电极17覆盖第二栅极绝缘膜15.版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009276388A Semiconductor device, display, and portable equipment 有权
标题翻译：半导体器件，显示器和便携式设备
公开(公告)号：JP2009276388A
公开(公告)日：2009-11-26
申请号：JP2008124867
申请日：2008-05-12
申请人： Sharp Corp , シャープ株式会社
发明人： WAKAO SHUJI , SHIOMI TAKESHI , KATAOKA KOTARO
IPC分类号： G09F9/00 , G02B5/00 , G02B5/04 , G02F1/1335 , G09G3/20 , G09G3/36 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/786 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing storage information from being lost by incidence of light. SOLUTION: Advancing directions of the lights are aligned to be directed to a normal direction of a lower side optical sheet 7 by the optical sheet 7, when the lights having the random advancing directions are get incident to the optical sheet 7 from a backlight module or a display element. The almost all lights emitted from a prism face of the lower side optical sheet 7 are thereby emitted within a range of a fixed emission angle ±θ° with respect to the normal of the lower side optical sheet 7, and are shielded surely by a lower side light shielding body 5, not to get incident turning in around an peripheral edge of the lower side light shielding body 5. Incident lights into an information storage holding part 3 are effectively reduced thereby, and the storage information is prevented from being lost out of the information storage holding part 3. Advancing directions of the incident lights are aligned to be directed to a normal direction of an upper side optical sheet 8 by the optical sheet 8, as to an upper side light shielding body 6 and the upper side optical sheet 8, and the lights are shielded surely by the upper side light shielding body 6. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止存储信息由于光的入射而丢失的半导体器件。解决方案：当具有随机前进方向的光从光学片7入射到光学片7时，通过光学片7将光的前进方向排列成朝向下侧光学片7的法线方向背光模块或显示元件。因此，从下侧光学片7的棱镜面射出的几乎所有的光在相对于下侧光学片7的法线的固定的发光角±θ°的范围内被发射，并被可靠地屏蔽不会使下侧侧遮光体5的周缘的周围转动。入射到信息存储保持部3中的入射光被有效地减少，并且防止了存储信息被丢失信息存储保持部3.入射光的前进方向通过光学片8对准上侧光学片8的法线方向，上侧遮光体6和上侧光学片 8，灯被上侧遮光体6确定地遮蔽。版权所有（C）2010，JPO＆INPIT

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