专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2004281345A Discharge element and light emitting element having the same, and display device 审中-公开
公开(公告)号：JP2004281345A
公开(公告)日：2004-10-07
申请号：JP2003075011
申请日：2003-03-19
申请人： Sharp Corp , シャープ株式会社
发明人： HASHIMOTO TOMOSHI , SAKAI OSAMU
IPC分类号： G09G3/20 , G09G3/282 , G09G3/288 , G09G3/291 , G09G3/298 , H01J11/14 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/46 , H01J17/04 , G09G3/28 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To reduce influences of a plurality of wirings 25, 26 of discharge electrodes 23, 24 on discharge and to concentrate the discharge on a prescribed discharge region between the discharge electrodes 23, 24.
SOLUTION: A first insulating layer 31 and a second insulating layer 32 are laminated in order on a glass substrate 21, and a main through hole 34 which penetrates vertically respective insulating layers 31, 32 is formed. A first discharge electrode 23 is installed at the bottom of the main through hole 34, and a second discharge electrode 24 is installed on the top of the second insulating layer. Furthermore, first wiring 25 is provided between the first insulating layer 31 and the glass substrate 21, and second wiring 26 is provided between the first insulating layer 31 and the second insulating layer 32. Then, while the first wiring 25 is connected directly to the first discharge electrode 23, the second wiring 26 is connected to the second discharge electrode 24 through a second connecting part 28.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2004281344A Discharge element and light emitting element having the same, and display device 审中-公开
公开(公告)号：JP2004281344A
公开(公告)日：2004-10-07
申请号：JP2003075010
申请日：2003-03-19
申请人： Sharp Corp , シャープ株式会社
发明人： HASHIMOTO TOMOSHI , SAKAI OSAMU
IPC分类号： H01J17/49
摘要： PROBLEM TO BE SOLVED: To reduce influences of a plurality of wirings 25, 26 of discharge electrodes 23, 24 on discharge and to concentrate the discharge on a prescribed discharge region between the discharge electrodes 23, 24.
SOLUTION: A first insulating layer 31 and a second insulating layer 32 are laminated in order on a glass substrate 21, and the plurality of discharge electrodes 23, 24 are provided on the top of the second insulating layer 32. Furthermore, the wirings 25, 26 are arranged below the second insulating layer and are connected to respective discharge electrodes 23, 24 through connecting parts 27, 28 penetrating through the insulating layers 31, 32.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004186229A Chemical vapor growth device 审中-公开
公开(公告)号：JP2004186229A
公开(公告)日：2004-07-02
申请号：JP2002348647
申请日：2002-11-29
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO , SAKAI OSAMU
IPC分类号： C23C16/44 , C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor growth device with which a high quality film can be formed with high gas dissociation efficiency.
SOLUTION: The chemical vapor growth device is provided with a processing chamber 50 where a substrate to be processed 2 is placed inside, a gas introduction port 11 introducing material gas G into the processing chamber 50, and a first electrode 13 and a second electrode 14 which are arranged on one face side of the substrate to be processed. The first electrode 13 is provided with a catalyst function promoting resolution of material gas G.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2003073834A Plasma processing unit 有权
标题翻译：等离子体加工单元
公开(公告)号：JP2003073834A
公开(公告)日：2003-03-12
申请号：JP2001259977
申请日：2001-08-29
申请人： Sharp Corp , シャープ株式会社
发明人： SAKAI OSAMU
IPC分类号： H05H1/46 , C23C16/455 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing unit which can form and process a film of high quality in a stable condition.
SOLUTION: High-frequency voltage is applied to an aluminum plate part of an electrode substrate. Aluminum rods of 5 mm×10 mm×1,000 mm work as cathode electrodes 2a. Aluminum rods of 5 mm×5 mm×1,000 mm insulated to the cathode electrode 2a by an interelectrode insulating layer 3 work as anode electrodes 2b having a ground potential. A gas retention part 7 has a structure surrounded by the aluminum plate part of the electrode substrate and the other inner walls, are all composed of metals, and hence have the same electric potential to constitute the plasma processing unit.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种能够在稳定状态下形成和处理高质量的膜的等离子体处理单元。解决方案：将高频电压施加到电极基板的铝板部分。 5mm×10mm×1000mm的铝棒作为阴极2a工作。通过电极间绝缘层3与阴极电极2a绝缘的5mm×5mm×1,000mm的铝棒作为具有接地电位的阳极电极2b。气体保持部7具有由电极基板的铝板部和其他内壁包围的结构，全部由金属构成，因此具有构成等离子体处理单元的相同的电位。

5. 发明专利

JP2005134476A Display device, active element array substrate, and amplifying element 审中-公开
标题翻译：显示设备，主动元件阵列基板和放大元件
公开(公告)号：JP2005134476A
公开(公告)日：2005-05-26
申请号：JP2003367724
申请日：2003-10-28
申请人： Sharp Corp , シャープ株式会社
发明人： HASHIMOTO TOMOSHI , SAKAI OSAMU
IPC分类号： H01L51/50 , G09G3/20 , G09G3/282 , G09G3/296 , G09G3/30 , G09G3/36 , H05B33/14 , G09G3/28
摘要： PROBLEM TO BE SOLVED: To provide a display device that can be manufactured at low cost and increase in size is easy, and to provide an active element array substrate, used suitably for the display device, and to provide an amplifying element. SOLUTION: The display device comprises a substrate 30 having a plurality of pixels P arranged in to a matrix form, a drive circuit 50 for outputting a signal for driving the plurality of the pixels P, and a plurality of amplifying elements 10, provided on the substrate 30 and supplied to the plurality of the pixels P by amplifying the signal output from the drive circuit 50. Each of the plurality of the amplifying elements 10 includes a first electrode 1 and a second electrode 2, generating discharges mutually between them, and a third electrode 3 for controlling the magnitude of discharge current flowing between the first electrode 1 and the second electrode 2. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以以低成本制造并且尺寸增加的显示装置容易，并且提供适用于显示装置的有源元件阵列基板，并提供放大元件。解决方案：显示装置包括具有以矩阵形式布置的多个像素P的基板30，用于输出用于驱动多个像素P的信号的驱动电路50和多个放大元件10，设置在基板30上并通过放大从驱动电路50输出的信号而提供给多个像素P.多个放大元件10中的每一个包括第一电极1和第二电极2，在它们之间相互产生放电，以及用于控制在第一电极1和第二电极2之间流动的放电电流的大小的第三电极3。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2003282459A Plasma treatment apparatus and method of manufacturing substrate formed with thin film 审中-公开
标题翻译：等离子体处理装置和制造薄膜形成薄膜的方法
公开(公告)号：JP2003282459A
公开(公告)日：2003-10-03
申请号：JP2002086148
申请日：2002-03-26
申请人： Sharp Corp , シャープ株式会社
发明人： SAKAI OSAMU
IPC分类号： H05H1/46 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32009
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can conduct plasma treatment satisfactorily only on a part of a substrate to be treated, and also provide a method of manufacturing a substrate formed with a thin film. SOLUTION: The plasma treatment apparatus comprises treatment chamber 10 to place the substrate 50 to be treated inside thereof, a gas inlet port for introducing gas into the treatment chamber 10, and a plurality of plasma discharge generating sections 30, each having an anode 30a and a cathode 30b. The plasma treatment apparatus is used for conducting plasma treatment on the substrate 50 to be treated. The plurality of plasma discharge generating sections 30 selectively generates plasma discharge in only each corresponding part of a face to be treated of the substrate 50 to be treated. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够仅在待处理的基板的一部分上令人满意地进行等离子体处理，并且还提供了制造形成有薄膜的基板的方法。解决方案：等离子体处理装置包括处理室10以将待处理的基板50放置在其中，用于将气体引入处理室10的气体入口端口和多个等离子体放电产生部分30，每个等离子体放电产生部分具有阳极30a和阴极30b。等离子体处理装置用于对待处理的基板50进行等离子体处理。多个等离子体放电产生部分30仅选择性地在要处理的基板50的待处理面的相应部分中产生等离子体放电。版权所有（C）2004，JPO

7. 发明专利

JP2007241313A Display device 有权
标题翻译：显示设备
公开(公告)号：JP2007241313A
公开(公告)日：2007-09-20
申请号：JP2007147351
申请日：2007-06-01
申请人： Sharp Corp , シャープ株式会社
发明人： SAKAI OSAMU , OKAMOTO MASAYA
IPC分类号： G09F9/30 , G02F1/1333 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To provide a switching element easy to manufacture and a display device comprising the same. SOLUTION: This display device is constituted of a plurality of pixels arranged in a matrix form and the switching element 100 prepared for the plurality of pixels each and comprises: a first electrode 1 and a second electrode 2 provided apart from each other so as to run a discharge current between them; a switching element having a third electrode 3 configured to be capable of changing the difference in potential from at least one of the first and second electrodes 1, 2, and capable of controlling the magnitude of the discharge current running between the first and second electrodes 1, 2 by changing the potential difference; scanning wiring electrically connected to either the first electrode of switching element, or the second electrode; a signal wiring electrically connected to the third electrode of the switching element; a pixel electrode electrically connected to the other of the first and second electrodes of the switching element; a counter electrode 6 opposing the pixel electrode; and a display medium layer arranged between the pixel electrode and the counter electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供易于制造的开关元件和包括该开关元件的显示装置。解决方案：该显示装置由以矩阵形式布置的多个像素构成，并且为多个像素制备的开关元件100各自包括：彼此分开设置的第一电极1和第二电极2 以便在它们之间运行放电电流; 具有第三电极3的开关元件，其被配置为能够改变与第一和第二电极1,2中的至少一个电极的电位差，并且能够控制在第一和第二电极1之间的放电电流的大小，2通过改变电位差; 电连接到开关元件的第一电极或第二电极的扫描布线; 电连接到所述开关元件的第三电极的信号布线; 电连接到开关元件的第一和第二电极中的另一个的像素电极; 与像素电极相对的对置电极6; 以及布置在像素电极和对电极之间的显示介质层。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2004212949A Active device, light emitting device euipped with same, and display device 有权
公开(公告)号：JP2004212949A
公开(公告)日：2004-07-29
申请号：JP2003367769
申请日：2003-10-28
申请人： Sharp Corp , シャープ株式会社
发明人： HASHIMOTO TOMOSHI , SAKAI OSAMU , HATANO AKITSUGU
IPC分类号： G02F1/1333 , G02F1/1362 , G09F9/30 , H01J17/44 , H01J17/49 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide an active device which is suitably used for a large-sized flat panel display, a light emitting device equipped with the same, and a display device. SOLUTION: The active device is equipped with: a cathode electrode 1 and an anode electrode 2 which are arranged at predetermined intervals in a first direction D1 and between which discharge is caused; and a discharge control electrode 3 which controls the level of the discharge current flowing between the cathode electrode and anode electrode according to its potential. The discharge control electrode 3 is provided beside a path 101 of discharge caused between the cathode electrode 1 and anode electrode 2, and the magnitude of the effect of the potential of the discharge electrode 3 on a potential structure generated according to the potential difference between the cathode electrode 1 and anode electrode 2 varies in a second direction D2 which is nearly orthogonal to the first direction D1. COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2004158839A Electronic device, its manufacturing method, and plasma process unit 有权
公开(公告)号：JP2004158839A
公开(公告)日：2004-06-03
申请号：JP2003348303
申请日：2003-10-07
申请人： Sharp Corp , シャープ株式会社
发明人： MIYAZAKI ATSUSHI , HATANO AKITSUGU , SAKAI OSAMU
IPC分类号： H05B33/10 , C23C16/505 , H01L21/31 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To obtain a high-quality film even at a low temperature of a substrate to be treated, and to form the film with high efficiency of gas dissociation. SOLUTION: A plasma process unit performing plasma treatment to a substrate to be treated 4 is provided with a treatment chamber 5 mounting the substrate to be treated 4 inside, a gas inlet 6 introducing gas into the treatment chamber 5, and a plasma discharge generating part 15 provided in the treatment chamber 5. The plasma discharge generating part 15 has a first electrode 2a and a second electrode 2b provided more adjacently to the substrate to be treated 4 than the first electrode 2a. In the first electrode 2a and the second electrode 2b, only a surface that can be visually inspected from the normal line direction of the substrate to be treated 4 functions as a plasma discharge surface. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2003332247A Electrode substrate, plasma treatment apparatus using same, and plasma treatment method 审中-公开
标题翻译：电极基板，等离子体处理装置及其等离子体处理方法
公开(公告)号：JP2003332247A
公开(公告)日：2003-11-21
申请号：JP2002139311
申请日：2002-05-14
申请人： Sharp Corp , シャープ株式会社
发明人： NAKAMURA KENJI , SAKAI OSAMU
IPC分类号： H05H1/46 , B01J19/08 , C23C16/505 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an electrode substrate, by which only a necessary part can be treated on a surface of the substrate and a treated part can be readily changed, a plasma treatment apparatus, and a plasma treatment method. SOLUTION: A plasma CVD device generates plasma 8 with the supply of electrical energy applied by a power supply 6, places material gas into a plasma state, and treats the surface of a substrate 1 by decomposing the material gas into active species. A pair of electrode wires 2a and 2b is formed on the substrate 1. A distance between the electrode wires 2a and 2b is varied depending upon the point on the substrate 1. Electrical energy is applied to the electrode wires 2a and 2b, so that the surface of the substrate 1 is treated according to a distance between the electrode wires 2a and 2b while a part of the electrode wires 2a and 2b serves as a discharge electrode. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种电极基板，通过该电极基板，可以在基板的表面上仅处理必要部分，并且处理部分可以容易地改变，等离子体处理装置和等离子体处理方法。解决方案：等离子体CVD装置通过由电源6施加的电能的供给产生等离子体8，将原料气体置于等离子体状态，并通过将原料气体分解为活性物质来处理基板1的表面。一对电极线2a和2b形成在基板1上。电极线2a和2b之间的距离根据基板1上的点而变化。电能施加到电极线2a和2b，基板1的表面根据电极线2a和2b之间的距离进行处理，而一部分电极线2a和2b用作放电电极。版权所有（C）2004，JPO

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式