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1. 发明专利

JP2005260186A Plasma process apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：JP2005260186A
公开(公告)日：2005-09-22
申请号：JP2004073496
申请日：2004-03-15
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO
IPC分类号： H05H1/46 , C23C16/509 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a plasma process apparatus capable of giving different plasma energy according to the kind of gas for plasma treatment. SOLUTION: The invention comprises a gas supply portion for supplying gas G1 and G2 for plasma treatment to a vacuum container 50 and a plasma generation portion 15 for generating plasma in the vacuum container 50. In a plasma CVD apparatus 60 for applying the plasma treatment to a deposition substrate 2 in the vacuum container 50, the plasma generation portion 15 is provided on a position away from the deposition substrate 2 such that a plurality of plasma regions 10a and 10b different in region area are formed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够根据等离子体处理用气体的种类给出不同等离子体能量的等离子体处理装置。解决方案：本发明包括一个气体供应部分，用于向真空容器50供给用于等离子体处理的气体G1和G2，以及用于在真空容器50中产生等离子体的等离子体产生部分15.在等离子体CVD装置60中，在真空容器50中对沉积基板2进行等离子体处理，等离子体产生部分15设置在远离沉积基板2的位置，使得形成区域区域不同的多个等离子体区域10a和10b。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004186229A Chemical vapor growth device 审中-公开
公开(公告)号：JP2004186229A
公开(公告)日：2004-07-02
申请号：JP2002348647
申请日：2002-11-29
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO , SAKAI OSAMU
IPC分类号： C23C16/44 , C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a chemical vapor growth device with which a high quality film can be formed with high gas dissociation efficiency.
SOLUTION: The chemical vapor growth device is provided with a processing chamber 50 where a substrate to be processed 2 is placed inside, a gas introduction port 11 introducing material gas G into the processing chamber 50, and a first electrode 13 and a second electrode 14 which are arranged on one face side of the substrate to be processed. The first electrode 13 is provided with a catalyst function promoting resolution of material gas G.
COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2007047602A Wiring board and manufacturing method thereof 审中-公开
标题翻译：接线板及其制造方法
公开(公告)号：JP2007047602A
公开(公告)日：2007-02-22
申请号：JP2005233624
申请日：2005-08-11
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO
IPC分类号： G09F9/30 , G02F1/1345
摘要： PROBLEM TO BE SOLVED: To provide a wiring board and a manufacturing method thereof capable of forming wiring with an influence of variance in landing or spread of liquid drops suppressed without increasing steps of patterning etc. when forming inter-layer connection wiring by a method of selectively applying a liquid material, such as an ink jet method, and to provide an electronic device and a display device which are obtained by using them.
SOLUTION: The wiring board includes a lower layer conductive part, an insulating layer, and an upper layer conductive part on a substrate in this order, and the upper layer conductive part has a structure wherein an inside area and an outside area isolated from each other by openings are connected through at least one conduction part, and the insulating layer has a through hole connected to at least one of openings of the upper layer conductive part. and the circuit board has the lower layer conductive part and the upper layer conductive part connected through the inter-layer connection wiring formed in at least the through hole of the insulating layer and openings of the upper layer conductive part.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种布线基板及其制造方法，其能够在形成层间连接布线时形成层间连接布线时，在不增加图案化步骤的情况下，在不增加图案化步骤的情况下，形成具有方差的着色或扩散的变化的影响的布线选择性地施加诸如喷墨法的液体材料的方法，并提供通过使用它们获得的电子设备和显示装置。解决方案：布线板依次包括在基板上的下层导电部分，绝缘层和上层导电部分，并且上层导电部分具有隔离的内部区域和外部区域的结构通过开口彼此连接通过至少一个导电部分，并且绝缘层具有连接到上层导电部分的至少一个开口的通孔。并且电路板具有通过至少形成在绝缘层的通孔和上层导电部分的开口中的层间连接布线连接的下层导电部分和上层导电部分。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004147102A Device and method for image reading 有权
标题翻译：用于图像读取的装置和方法
公开(公告)号：JP2004147102A
公开(公告)日：2004-05-20
申请号：JP2002309967
申请日：2002-10-24
申请人： Sharp Corp , シャープ株式会社
发明人： IZUMI YOSHIHIRO , TERANUMA OSAMU , UEHARA KAZUHIRO , ODA TOMOHIKO
IPC分类号： H01L27/146 , H01L27/14 , H04N1/028 , H04N1/031 , H04N1/04 , H04N5/335 , H04N5/369 , H04N5/376 , H04N5/378
CPC分类号： H04N1/0318 , H01L27/14676
摘要： PROBLEM TO BE SOLVED: To provide an image reader where variation of TFT characteristic (resistance value) for photodetection seen in a short period is suppressed. SOLUTION: The reader is provided with a sensor substrate 20 as a light quantity conversion element having a TFT 7 for photodetection and a pixel capacitance 17, and a drive IC 19 which drives the TFT 7 to an on state or an off state by applying voltage to the gate electrode of the TFT 7. The drive IC 19 applies voltage of polarity inverse to that of the average of voltage which makes the TFT 7 be in off state with respect to the gate electrode of the TFT 7 in an optional period. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种在短时间内看到的用于光电检测的TFT特性（电阻值）的变化被抑制的图像读取器。解决方案：读取器设置有作为具有用于光电检测的TFT7和像素电容17的光量转换元件的传感器基板20，以及驱动IC7将TFT7驱动为导通状态或断开状态通过向TFT 7的栅电极施加电压。驱动IC19施加极性的电压与电压平均值的电压相反，使得TFT7相对于TFT7的栅电极处于关闭状态，期。版权所有（C）2004，JPO

5. 发明专利

JP2006173242A Catalyst contact radical creation equipment, semiconductor device and liquid crystal display 审中-公开
标题翻译：催化剂联系雷达创造设备，半导体器件和液晶显示器
公开(公告)号：JP2006173242A
公开(公告)日：2006-06-29
申请号：JP2004361244
申请日：2004-12-14
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO
IPC分类号： H01L21/31 , C23C16/448 , G02F1/13 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a catalyst contact radical creation equipment arranged to introduce a plurality of kinds of material gas into a reaction chamber and to dissociate the material gas through contact with a catalyst in which the material gas can be dissociated with a high decomposition rate as compared with prior art.
SOLUTION: The catalyst contact radical creation equipment comprises a plurality of gas introduction means 50-1 and 50-2 for introducing a plurality of kinds of material gas G-1 and G-2, respectively, into a reaction chamber 40, catalysts 13-1 and 13-2 provided one or more for each gas introduction means 50-1, 50-2 in the reaction chamber 40 and capable of dissociating the material gas G-1, G-2 introduced into the reaction chamber 40 by the gas introduction means 50-1, 50-2, and a means 14 for suppressing contact between the catalyst 13-1 (or 13-2) provided for each gas introduction means 50-1 (or 50-2) and the material gas G-2 (or G-1) introduced into the reaction chamber 40 by the other gas introduction means 50-2 (or 50-1) different from the one gas introduction means 50-1 (or 50-2).
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得催化剂接触基团产生装置，其被布置成将多种材料气体引入反应室中，并且通过与材料气体可以与其中的物质气体分离的催化剂接触而解离材料气体，与现有技术相比高的分解速率。解决方案：催化剂接触基产生设备包括分别将多种材料气体G-1和G-2引入反应室40的多个气体引入装置50-1和50-2，催化剂13-1和13-2为反应室40中的每个气体引入装置50-1,50-2提供一个或多个，并且能够通过引入反应室40中的原料气体G-1，G-2分解气体引入装置50-1,50-2和用于抑制为每个气体导入装置50-1（或50-2）设置的催化剂13-1（或13-2）和材料气体之间的接触的装置14 通过与一个气体引入装置50-1（或50-2）不同的另一个气体引入装置50-2（或50-1）将G-2（或G-1）引入到反应室40中。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005353636A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2005353636A
公开(公告)日：2005-12-22
申请号：JP2004169570
申请日：2004-06-08
申请人： Sharp Corp , シャープ株式会社
发明人： ODA TOMOHIKO
IPC分类号： C23C16/455 , C23C16/509 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To improve utilization efficiency of radicals generating in a plasma area and the accuracy of plasma processing and to enhance utilization efficiency of energy required for plasma processing.
SOLUTION: The plasma processing apparatus is provided with a processing chamber wherein a substrate 4 to be processed, a gas inlet 6 to introduce a gas into the inside of the chamber, and a plasma discharge generator 15 to form a plasma area in an area away from the substrate 4 by generating plasma discharge within the chamber, and it is used to apply plasma processing to the substrate 4. The plasma discharge generator 15 is provided with an electrode structure to generate an electric field parallel to the substrate 4 uniformly in the plasma area.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提高等离子体区域中产生的自由基的利用效率和等离子体处理的精度，并提高等离子体处理所需的能量的利用效率。解决方案：等离子体处理装置设置有处理室，其中待处理的基板4，将气体引入室内的气体入口6和等离子体放电发生器15以形成等离子体区域通过在室内产生等离子体放电而离开基板4的区域，并且其用于对基板4施加等离子体处理。等离子体放电发生器15设置有电极结构，以均匀地产生平行于基板4的电场在等离子体区域。版权所有（C）2006，JPO＆NCIPI

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