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1. 发明专利

JP2005191212A Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005191212A
公开(公告)日：2005-07-14
申请号：JP2003429510
申请日：2003-12-25
申请人： Semiconductor Energy Lab Co Ltd , Sharp Corp , シャープ株式会社 , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , SATO TOMOHIKO , SASAGAWA SHINYA , MATSUO TAKUYA , KITAKADO HIDETO
IPC分类号： H01L29/423 , H01L21/265 , H01L21/336 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/41 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor, in which generation of damage or contamination of semiconductor layer can be controlled, even when gate insulating films are formed into different thicknesses. SOLUTION: The semiconductor device is manufactured by forming semiconductor layers 3a, 3b on a substrate, forming first insulating films 4, respectively on the semiconductor layers 3a, 3b, forming a second insulating film 5 on the semiconductor layer 3b via the first insulating film 4, and forming a third insulating film 6 on the second insulating film 5. The first insulating film 4, formed on the semiconductor layer 3a, forms a first gate insulating film, and the first to third insulating films 4 to 6 formed on the semiconductor layer 3b form a second gate insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使当栅极绝缘膜形成为不同的厚度时，提供可以控制半导体层的损伤或污染的产生的半导体器件及其制造方法。解决方案：半导体器件通过在衬底上形成半导体层3a，3b来制造，分别在半导体层3a，3b上形成第一绝缘膜4，在半导体层3b上形成第二绝缘膜5，经由第一绝缘膜4，并且在第二绝缘膜5上形成第三绝缘膜6.形成在半导体层3a上的第一绝缘膜4形成第一栅极绝缘膜，形成在第一绝缘膜4上的第一至第三绝缘膜4至6 半导体层3b形成第二栅极绝缘膜。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005183773A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005183773A
公开(公告)日：2005-07-07
申请号：JP2003424364
申请日：2003-12-22
申请人： Semiconductor Energy Lab Co Ltd , Sharp Corp , シャープ株式会社 , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , ASANO ETSUKO , ARAO TATSUYA , YOKOSHIMA TAKASHI , MATSUO TAKUYA , KITAKADO HIDETO
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78621 , H01L27/1237 , H01L29/42384 , H01L29/49 , H01L29/66757
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can simplify a process by doping impurities at once, and to provide its manufacturing method.
SOLUTION: In the manufacturing method of the semiconductor device, semiconductor layers 3a, 3b are formed on a substrate 1; a first insulating film 4 is formed on the semiconductor layer; first and second conductive films 5a, 6b are formed thereon; a first gate electrode 8 consisting of the first and second conductive films is formed on the semiconductor film 3a via the first insulating film, so that a part of the first conductive film 5a is exposed from the second conductive film 6b; a second insulating layer 9 is formed on the first insulating film; third and fourth conductive films 10a, 11b are formed thereon; and a second gate electrode 13 consisting of the third and fourth conductive films and formed so that a part of the third conductive film 10a is exposed from the fourth conductive film 11b is formed on the semiconductor layer 3b via the first and second insulating films.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种通过一次掺杂杂质来简化工艺的半导体器件，并提供其制造方法。解决方案：在半导体器件的制造方法中，半导体层3a，3b形成在基板1上; 在半导体层上形成第一绝缘膜4; 在其上形成第一和第二导电膜5a，6b; 通过第一绝缘膜在半导体膜3a上形成由第一导电膜和第二导电膜构成的第一栅电极8，使第一导电膜5a的一部分从第二导电膜6b露出; 在第一绝缘膜上形成第二绝缘层9; 在其上形成第三和第四导电膜10a，11b; 以及由第三导体膜和第四导电膜构成的第二栅电极13，其通过第一绝缘膜和第二绝缘膜形成在半导体层3b上，从第四导电膜11b露出第三导电膜10a的一部分。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2015052786A 液晶表示装置有权
标题翻译：液晶显示装置
公开(公告)号：JP2015052786A
公开(公告)日：2015-03-19
申请号：JP2014186353
申请日：2014-09-12
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： FUJIKAWA SAISHI , KIMURA HAJIME
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/133512 , G02F1/136227
摘要：【課題】色むらを解消し、視認性が高く、高画質の液晶表示装置を提供する。【解決手段】薄膜トランジスタ101のソース領域105a又はドレイン領域105bと電気的に接続するためのコンタクトホール103と重なるように、遮光層109を選択的に設ける。あるいは、開口を有する着色層(カラーフィルター)の開口部分をコンタクトホールと重なるように配置する。【選択図】図1
摘要翻译：要解决的问题：通过消除颜色不规则性来提供具有高可见度和高图像质量的液晶显示装置。解决方案：遮光层109选择性地设置成与用于与源极电连接的接触孔103重叠区域105a或漏极区域105b。或者，设置具有开口的着色层（滤色器）的开口部分，以与接触孔重叠。

4. 发明专利

JP2014199928A 表示装置及び電子機器有权
标题翻译：显示设备和电子设备
公开(公告)号：JP2014199928A
公开(公告)日：2014-10-23
申请号：JP2014094925
申请日：2014-05-02
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： FUJIKAWA SAISHI , KUWABARA HIDEAKI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/3205 , H01L21/768 , H01L23/532
摘要：【課題】大画面化しても低消費電力、歩留まり及び信頼性の向上を実現するための半導体装置の構造及びその作製方法を提供する。【解決手段】画面で使われる画素薄膜トランジスタを逆スタガ型薄膜トランジスタで作製する。その逆スタガ型薄膜トランジスタにおいて、ソース配線、ゲート電極を同一平面上に作製する。また、ソース配線と逆スタガ型薄膜トランジスタ、画素電極と逆スタガ型薄膜トランジスタをつなぐ金属配線を同一工程で作製する。【選択図】図3
摘要翻译：要解决的问题：提供一种用于实现低功耗的半导体器件的结构，即使在屏幕扩大时也提高产量和可靠性，并提供其制造方法。解决方案：使用的像素薄膜晶体管通过使用反交错型薄膜晶体管产生屏幕。在反交错型薄膜晶体管中，在同一平面上制造源极线和栅电极。此外，在相同的步骤中制造连接在源极线和反向交错型薄膜晶体管之间以及像素电极和反向交错型薄膜晶体管之间的金属线。

5. 发明专利

JP2013042174A Display device 审中-公开
标题翻译：显示设备
公开(公告)号：JP2013042174A
公开(公告)日：2013-02-28
申请号：JP2012249214
申请日：2012-11-13
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , CHIBA YOKO
IPC分类号： H01L21/336 , G09F9/00 , G09F9/30 , H01L29/786
CPC分类号： H01L27/1214 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To simplify a manufacturing process and a manufacturing cost by reducing the number of photomasks in a method of manufacturing a liquid crystal display device which is driven in a fringe field switching mode.SOLUTION: A first transparent conductive film and a first metal film are successively formed and laminated on an insulating substrate having light transmissivity, the first transparent conductive film and the first metal film are subjected to shape processing by using a multi-gradation mask as a first photomask. An insulating film, a first semiconductor film, a second semiconductor film and a second metal film are successively formed and laminated, the second metal film and the second semiconductor film are subjected to shape processing by using a multi-gradation mask as a second photomask, and a protection film is formed. The protection film is subjected to shape processing by using a third photomask, a second transparent conductive film is formed, and the second transparent conductive film is subjected to shape processing by using a fourth photomask.
摘要翻译：要解决的问题：通过在边缘场切换模式下驱动的液晶显示装置的制造方法中减少光掩模的数量来简化制造工艺和制造成本。解决方案：第一透明导电膜和第一金属膜依次形成并层压在具有透光性的绝缘基板上，第一透明导电膜和第一金属膜通过使用多等级掩模进行形状处理作为第一个光掩模。依次形成绝缘膜，第一半导体膜，第二半导体膜和第二金属膜，层叠第二金属膜和第二半导体膜，通过使用多层次掩模作为第二光掩模进行形状处理，形成保护膜。通过使用第三光掩模对保护膜进行形状处理，形成第二透明导电膜，并且通过使用第四光掩模对第二透明导电膜进行形状处理。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2011258979A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011258979A
公开(公告)日：2011-12-22
申请号：JP2011182531
申请日：2011-08-24
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , KUWABARA HIDEAKI
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device and a method for manufacturing the same for lowering power consumption and improving yield and reliability even when a display is enlarged.SOLUTION: An inversely-staggered thin film transistor is manufactured as a pixel thin film transistor used for a display. In the inversely-staggered thin film transistor, a source wiring and a gate electrode are manufactured on the same surface. A metal wiring connecting the source wiring and the inversely-staggered thin film transistor and a metal wiring connecting a pixel electrode and the inversely-staggered thin film transistor are manufactured in the same process.
摘要翻译：要解决的问题：即使当显示器被放大时，提供半导体器件的结构及其制造方法，用于降低功耗并提高产量和可靠性。解决方案：制造反交错薄膜晶体管作为用于显示器的像素薄膜晶体管。在反交错薄膜晶体管中，在相同的表面上制造源极配线和栅电极。以相同的方法制造连接源极布线和反交错薄膜晶体管的金属布线以及连接像素电极和反交错薄膜晶体管的金属布线。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2005101571A Method for forming semiconductor device 有权
标题翻译：形成半导体器件的方法
公开(公告)号：JP2005101571A
公开(公告)日：2005-04-14
申请号：JP2004243673
申请日：2004-08-24
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： ISOBE ATSUO , SAITO AKIRA , FUJIKAWA SAISHI
IPC分类号： H01L21/28 , H01L21/027 , H01L21/20 , H01L21/336 , H01L29/423 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To form a CPU by using a TFT formed on a glass substrate, especially to form a CPU having a fine TFT whose gate length is at most 1 μm. SOLUTION: A conductive film 109 is formed on a crystalline semiconductor film formed on the glass substrate, a mask 110 having a taper is formed on the conductive film, the conductive film is etched by using the mask, and the TFT whose gate length is at most 1.0 μm is formed. Regarding the crystalline semiconductor film, an amorphous semiconductor film formed on the glass substrate through a base film is crystallized at low temperature by laser irradiation. As a result, following problems are solved. (1) It is necessary to make length of a gate (gate length) of the TFT smaller for realizing the CPU which is operated at high speed when the CPU etc. are formed by using the TFT formed on the glass substrate, however, since flexure of the glass substrate is large, a gate electrode cannot be etched into gate length of grade by which operation is performed as the CPU, and further, (2) sodium contained in glass contaminates surroundings, and a higher heat-resistant of glass itself is needed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过使用形成在玻璃基板上的TFT来形成CPU，特别是形成具有栅极长度最大为1μm的精细TFT的CPU。解决方案：在形成在玻璃基板上的结晶半导体膜上形成导电膜109，在导电膜上形成具有锥形的掩模110，通过使用掩模蚀刻导电膜，并且将栅极长度至多为1.0μm。关于结晶半导体膜，通过基膜在玻璃基板上形成的非晶半导体膜通过激光照射在低温下结晶化。结果，解决了以下问题。（1）通过使用形成在玻璃基板上的TFT来形成CPU等，为了实现高速运转的CPU，需要使TFT的栅极长度（栅极长度）变小，但由于玻璃基板的弯曲度大，栅电极不能蚀刻成作为CPU进行操作的等级的栅极长度，此外，（2）玻璃中含有的钠污染环境，玻璃本身的耐热性较高是需要的版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2014096600A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014096600A
公开(公告)日：2014-05-22
申请号：JP2013271863
申请日：2013-12-27
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , CHIBA YOKO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1214 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To simplify a manufacturing process and to reduce a manufacturing cost by reducing the number of photomasks in a method of manufacturing a liquid crystal display device which is driven in a fringe field switching mode.SOLUTION: A first transparent conductive film and a first metal film are successively formed and laminated on an insulating substrate having light transmissivity, and the first transparent conductive film and the first metal film are subjected to shape processing by using a multi-gradation mask as a first photomask. An insulating film, a first semiconductor film, a second semiconductor film and a second metal film are successively formed and laminated, the second metal film and the second semiconductor film are subjected to the shape processing by using the multi-gradation mask as a second photomask, and a protection film is formed. The protection film is subjected to the shape processing by using a third photomask, a second transparent conductive film is formed, and the second transparent conductive film is subjected to the shape processing by using a fourth photomask.
摘要翻译：要解决的问题：为了简化制造工艺，并且通过减少在边缘场开关模式下驱动的液晶显示装置的制造方法中的光掩模的数量来降低制造成本。解决方案：第一透明导电膜和依次形成第一金属膜并层压在具有透光性的绝缘基板上，并且通过使用多等级掩模作为第一光掩模对第一透明导电膜和第一金属膜进行形状处理。依次形成绝缘膜，第一半导体膜，第二半导体膜和第二金属膜，层叠第二金属膜和第二半导体膜，使用多层次掩模作为第二光掩模进行形状处理形成保护膜。通过使用第三光掩模对保护膜进行形状处理，形成第二透明导电膜，并且通过使用第四光掩模对第二透明导电膜进行形状处理。

9. 发明专利

JP2014089452A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014089452A
公开(公告)日：2014-05-15
申请号：JP2013241150
申请日：2013-11-21
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , HOSOYA KUNIO
IPC分类号： G02F1/1368 , G02F1/1339 , G09F9/30
CPC分类号： G02F1/13394 , G02F1/133512 , G02F1/1362
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display device that can achieve a higher aperture ratio and higher definition, and also provide a liquid crystal display device that can achieve high display quality under external light without increasing the number of steps.SOLUTION: Dummy layers 113, 114 are formed under a columnar spacer 112 formed in a position overlapping with a TFT. The dummy layers 113, 114 are located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of sticking a pair of substrates 100, 119 together is distributed and relieved. The dummy layers are formed of the same material as a pixel electrode 109 to be formed without increasing the number of steps.
摘要翻译：要解决的问题：提供一种能够实现更高的开口率和更高清晰度的液晶显示装置，并且还提供一种能够在外部光线下实现高显示质量而不增加步数的液晶显示装置。解决方案：虚拟层113,114形成在与TFT重叠的位置形成的柱状隔离物112的下方。虚设层113,114位于与TFT重叠的位置，从而在将一对基板100,119粘贴在一起的步骤中施加到TFT的压力被分配和释放。虚拟层由与要形成的像素电极109相同的材料形成，而不增加台阶数。

10. 发明专利

JP2011034108A Display device 有权
标题翻译：显示设备
公开(公告)号：JP2011034108A
公开(公告)日：2011-02-17
申请号：JP2010247134
申请日：2010-11-04
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： FUJIKAWA SAISHI , HOSOYA KUNIO
IPC分类号： G02F1/1368 , G02F1/1339 , G02F1/1345
CPC分类号： G02F1/13394 , G02F1/133512 , G02F1/1362
摘要： PROBLEM TO BE SOLVED: To solve such problems that, when a columnar spacer is disposed in a region overlapping with a TFT, pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming.
SOLUTION: A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题为了解决这样的问题，即当将柱状间隔物设置在与TFT重叠的区域中时，在将一对基板彼此连接时将施加压力，这可能导致TFT不利影响和裂缝形成。解决方案：虚拟层由位于与TFT重叠的位置形成的柱状间隔物下方的无机材料形成。虚设层位于与TFT重叠的位置，从而在安装一对基板的步骤中施加到TFT的压力被分配和释放。虚拟层优选由与像素电极相同的材料形成，使得其形成而不增加处理步骤的数量。版权所有（C）2011，JPO＆INPIT

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