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    • 3. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2013251892A
    • 2013-12-12
    • JP2013094860
    • 2013-04-29
    • Semiconductor Energy Lab Co Ltd株式会社半導体エネルギー研究所
    • TANABE TORUMIYAKE HIROYUKI
    • H03K3/354H03K3/03
    • H01L27/0218H03K3/0315
    • PROBLEM TO BE SOLVED: To provide: a semiconductor device that does not require a circuit for generating a potential to be input to a back gate and has a small number of wirings even when an inverter comprises a transistor having the back gate; and a highly reliable semiconductor device.SOLUTION: The semiconductor device includes a plurality of circuits each provided with two inverters in parallel. The two inverters in any stage output respective signals of opposite polarities. This property is utilized for interchanging signals output from the inverters in the previous stage. Thus, inverted signals are input to back gates of transistors of the inverters in the subsequent stage.
    • 要解决的问题:提供:即使当逆变器包括具有后栅的晶体管时,也不需要用于产生输入到背栅的电位并且具有少数布线的电路的半导体器件; 和高度可靠的半导体器件。解决方案:半导体器件包括并联设置有两个反相器的多个电路。 任意级的两个反相器输出相反极性的相应信号。 该属性用于交换前一级逆变器输出的信号。 因此,反相信号被输入到后级的反相器的晶体管的后栅极。