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1. 发明专利

JP2015043455A 半導体装置有权
标题翻译：半导体器件
公开(公告)号：JP2015043455A
公开(公告)日：2015-03-05
申请号：JP2014211594
申请日：2014-10-16
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： ARAI YASUYUKI , ISHIKAWA AKIRA , TAKAYAMA TORU , MARUYAMA JUNYA , GOTO YUGO , FUKUMOTO YUMIKO , EBATO YUKO
IPC分类号： H01L21/336 , G06K19/07 , G06K19/077 , H01L21/02 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/786
CPC分类号： G06K19/07749 , H01L27/12 , H01L27/1214 , H01L29/78603
摘要：【課題】シリコンウェハからなるICチップは厚いため商品容器自体に搭載する場合、表面に凹凸が生じ、デザイン性が低下してしまった。そこで非常に膜厚の薄い薄膜集積回路、及び薄膜集積回路を有するICチップ等を提供する。【解決手段】薄膜集積回路を有するICチップは、従来のシリコンウェハにより形成される集積回路と異なり、半導体膜を能動領域(例えば薄膜トランジスタであればチャネル形成領域)として備えることを特徴とする。このようなICチップは非常に薄いため、カードや容器等の商品へ搭載してもデザイン性を損ねることがない。【選択図】図6
摘要翻译：要解决的问题为了解决设计恶化和表面不规则的问题，当将由硅晶片制成的IC芯片安装在产品容器本身上时，由于IC芯片的厚度，提供具有薄膜集成电路的超薄膜的薄膜集成电路和具有薄膜集成电路的IC芯片。解决方案：具有薄膜集成电路的IC芯片包括半导体膜作为有源区（例如，在薄膜晶体管）与由硅晶片形成的常规集成电路不同。由于这种IC芯片非常薄，所以即使将IC芯片安装在诸如卡片和容器的产品上也不会受到损害。

2. 发明专利

JP2014096596A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014096596A
公开(公告)日：2014-05-22
申请号：JP2013254023
申请日：2013-12-09
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TAKAYAMA TORU , MARUYAMA JUNYA , MIZUKAMI MAYUMI , YAMAZAKI SHUNPEI
IPC分类号： H01L27/12 , H01L29/786 , G02F1/13357 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/762 , H01L21/77 , H01L21/84 , H01L51/50 , H05B33/02 , H05B33/04 , H05B33/10
CPC分类号： H01L27/1218 , G02F1/1339 , G02F1/1341 , G02F1/1362 , G02F2001/13613 , H01L21/2007 , H01L21/76251 , H01L27/1214 , H01L27/1248 , H01L27/1266 , H01L27/3262 , H01L29/24 , H01L29/7869 , H01L33/44 , H01L2227/326 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a separation method that does not damage a layer to be separated, and that can separate the entire surface of not only a small layer to be separated but also a large layer to be separated.SOLUTION: The method includes a step of forming a metal layer on a substrate, a step of forming an oxide layer on the metal layer, a step of forming an insulation layer on the oxide layer, a step of forming a thin film transistor on the insulation layer, a step of forming a light-emitting element on the thin film transistor, and a step of separating the thin film transistor from the substrate inside the oxide layer or at an interface of the oxide layer by using a human hand or a device for separating the thin film transistor.
摘要翻译：要解决的问题：提供不破坏待分离层的分离方法，并且可以分离不仅要分离的小层的整个表面，而且可以分离大的待分离层。解决方案：该方法包括在基板上形成金属层的步骤，在金属层上形成氧化物层的步骤，在氧化物层上形成绝缘层的步骤，在绝缘层上形成薄膜晶体管的步骤，步骤在薄膜晶体管上形成发光元件的步骤，以及通过使用人手或用于分离薄膜的器件将薄膜晶体管与氧化物层内的氧化物层或氧化物层的界面分离的步骤晶体管。

3. 发明专利

JP2014078010A Semiconductor device 有权
公开(公告)号：JP2014078010A
公开(公告)日：2014-05-01
申请号：JP2013224100
申请日：2013-10-29
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TAKAYAMA TORU
IPC分类号： G09F9/30 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a peeled layer is adhered to a base material having a curve surface, and a method of producing the same, especially, to provide a display having a curve surface, concretely, a light-emitting device having an OLED adhered to the base material having a curve surface, and a liquid crystal display device adhered to the base material having a curve surface.SOLUTION: When forming a peeled layer including elements on a substrate, all channel length directions of regions functioning as channels in the elements are arranged in the same direction. Laser beam scanning in the same direction as the channel length directions is radiated to complete the elements. Then, the peeled layer is adhered to a base material having a curve surface which is curved in a channel width direction, that is different from the channel length directions. Thus, a display having a curve surface is realized.

4. 发明专利

JP2014003307A Display device 有权
标题翻译：显示设备
公开(公告)号：JP2014003307A
公开(公告)日：2014-01-09
申请号：JP2013159341
申请日：2013-07-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： NISHI KAZUO , TAKAYAMA TORU , GOTO YUGO
IPC分类号： H01L27/146 , G09F9/00 , G09F9/30 , H01L21/02 , H01L21/20 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/522 , H01L27/12 , H01L27/144 , H01L29/786 , H01L31/10
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1446 , H01L29/66757 , H01L29/78675 , H01L2221/68368 , H01L2224/05001 , H01L2224/05008 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a display device including a plastic substrate.SOLUTION: A display device includes: a plastic substrate; a first semiconductor element; a second semiconductor element; first wiring electrically connected with the first semiconductor element; second wiring electrically connected with the second semiconductor element; third wiring provided on a printed wiring board; and fourth wiring provided on the printed wiring board. The first wiring is electrically connected with the third wiring through first connection wiring, and the second wiring is electrically connected with the fourth wiring through second connection wiring. The first connection wiring extends from an area on the first wiring to a region contacting with the plastic substrate, and the second connection wiring extends from an area on the second wiring to an area contacting with the plastic substrate.
摘要翻译：要解决的问题：提供一种包括塑料基板的显示装置。解决方案：显示装置包括：塑料基板; 第一半导体元件; 第二半导体元件; 与第一半导体元件电连接的第一布线; 与第二半导体元件电连接的第二布线; 设置在印刷电路板上的第三布线; 以及设置在印刷电路板上的第四布线。第一布线通过第一连接布线与第三布线电连接，第二布线通过第二连接布线与第四布线电连接。第一连接布线从第一布线的区域延伸到与塑料基板接触的区域，第二连接布线从第二布线的区域延伸到与塑料基板接触的区域。

5. 发明专利

JP2013235276A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2013235276A
公开(公告)日：2013-11-21
申请号：JP2013121806
申请日：2013-06-10
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TAKAYAMA TORU
IPC分类号： G09F9/00 , G02F1/1368 , H01L21/02 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide technique for manufacturing a flexible semiconductor device by using a flexible substrate, such as, a resin substrate.SOLUTION: A flexible display device using a resin substrate is manufactured by the following steps of: forming a resin substrate on a fixed substrate having a separation layer; forming at least a TFT element on the resin substrate; and peeling the resin substrate from the fixed substrate within a layer of the separation layer or at an interface of the separation layer, by irradiating the separation layer with a laser beam.
摘要翻译：要解决的问题：提供通过使用诸如树脂基板的柔性基板来制造柔性半导体器件的技术。解决方案：使用树脂基板的柔性显示装置通过以下步骤制造：将树脂基板形成在具有分离层的固定基板; 在树脂基板上形成至少一个TFT元件; 以及通过用激光束照射分离层，将树脂基板从分离层的层内或分离层的界面处的固定基板剥离。

6. 发明专利

JP2012190025A Vehicle 审中-公开
标题翻译：车辆
公开(公告)号：JP2012190025A
公开(公告)日：2012-10-04
申请号：JP2012092654
申请日：2012-04-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TAKAYAMA TORU , MARUYAMA JUNYA , GOTO YUGO , KUWABARA HIDEAKI , YAMAZAKI SHUNPEI
IPC分类号： G09F9/30 , H01L23/50 , B60R1/00 , G09F9/00 , H01L21/02 , H01L21/762 , H01L27/12 , H01L27/32 , H01L51/50 , H05B33/02
CPC分类号： H01L27/1266 , B60R1/00 , B60R11/0229 , B60R11/04 , B60R2011/004 , B60R2300/202 , B60R2300/802 , H01L21/6835 , H01L21/76251 , H01L27/1218 , H01L27/3244 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68386 , H01L2227/323 , H01L2227/326
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a separation layer attached to a base having a curved surface, and a manufacturing method for the semiconductor device, and particularly provide a display having a curved surface, more specifically a light-emitting device having an organic light-emitting element attached to a base having a curved surface.SOLUTION: A display having a curved surface is achieved by transferring to a film a separation layer including an organic light-emitting element provided for a substrate utilizing a stack of a first material layer including a metal layer or a nitride layer and a second material layer including an oxide layer and by curving the film and the separation layer.
摘要翻译：要解决的问题：为了提供一种具有附接到具有曲面的基底的分离层的半导体器件和用于半导体器件的制造方法，并且特别地提供具有弯曲表面的显示器，更具体地说，具有附接到具有弯曲表面的基底的有机发光元件的发光器件。解决方案：具有弯曲表面的显示器是通过使用包括金属层或氮化物层的第一材料层的堆叠将具有用于衬底设置的有机发光元件的分离层转移到膜来实现的，第二材料层包括氧化物层，并且通过弯曲膜和分离层。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012053471A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2012053471A
公开(公告)日：2012-03-15
申请号：JP2011212278
申请日：2011-09-28
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , KOYAMA JUN , TAKAYAMA TORU
IPC分类号： G09F9/30 , G02F1/1345 , G02F1/1368 , G09G3/32 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/156 , G09G3/32 , G09G3/3266 , G09G3/3275 , G09G2300/0408 , G09G2300/0809 , G09G2300/0842 , G09G2300/0857 , H01L27/3244
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive light-emitting device with bright image quality and an electric appliance including the light-emitting device.SOLUTION: A light-emitting device comprises a pixel portion and a driver circuit on one insulator. The entire pixel portion and driver circuit are formed using n-channel type semiconductor elements, so that their manufacturing processes are simplified. Since a light-emitting element provided for the pixel portion emits light in a direction away from the insulator, almost the entire pixel electrode (corresponding to a cathode of an EL element) serves as an effective light emission region. Therefore, the light-emitting device can be provided that is inexpensive and has bright image quality with a display region in which the area of the pixel electrode is effectively utilized.
摘要翻译：要解决的问题：提供具有鲜明图像质量的廉价的发光装置和包括该发光装置的电器。解决方案：发光器件包括一个绝缘体上的像素部分和驱动电路。整个像素部分和驱动电路使用n沟道型半导体元件形成，从而简化了其制造工艺。由于为像素部设置的发光元件沿远离绝缘体的方向发光，因此几乎整个像素电极（对应于EL元件的阴极）用作有效发光区域。因此，可以提供廉价且具有明亮的图像质量的发光装置，其中有效利用像素电极的面积的显示区域。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012043800A Manufacturing method of el display device 有权
标题翻译： EL显示装置的制造方法
公开(公告)号：JP2012043800A
公开(公告)日：2012-03-01
申请号：JP2011190293
申请日：2011-09-01
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , ARAI YASUYUKI , SUZAWA HIDEOMI , ONO KOJI , TAKAYAMA TORU
IPC分类号： H05B33/10 , G09F9/30 , H01L21/20 , H01L21/336 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide an EL display device with an opening ratio improved by optimizing a pixel structure.SOLUTION: An EL display device comprises: a semiconductor layer provided close to a gate electrode of a switching TFT; a semiconductor layer provided close to a gate electrode of a current control TFT; source wiring provided on the same plane as the gate electrode of the switching TFT and the gate electrode of the current control TFT; an insulation film covering the gate electrode of the switching TFT, the gate electrode of the current control TFT, and the source wiring; first connection wiring electrically connected to a semiconductor layer of the switching TFT and the source wiring; second connection wiring electrically connected to the semiconductor layer of the switching TFT and the gate electrode of the current control TFT; and an EL element including a pixel electrode electrically connected to a semiconductor layer of the current control TFT, a light-emitting layer, and an electrode facing the pixel electrode.
摘要翻译：要解决的问题：提供通过优化像素结构而提高开口率的EL显示装置。解决方案：EL显示装置包括：设置在开关TFT的栅电极附近的半导体层; 设置在电流控制TFT的栅电极附近的半导体层; 源极布线设置在与开关TFT的栅极电极和电流控制TFT的栅电极相同的平面上; 覆盖开关TFT的栅电极，电流控制TFT的栅电极和源极布线的绝缘膜; 电连接到开关TFT和源极布线的半导体层的第一连接布线; 电连接到开关TFT的半导体层和电流控制TFT的栅电极的第二连接布线; 以及包括电连接到电流控制TFT的半导体层的像素电极的EL元件，发光层和面向像素电极的电极。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012028793A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012028793A
公开(公告)日：2012-02-09
申请号：JP2011193912
申请日：2011-09-06
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TAKAYAMA TORU , SATO KEIJI , YAMAZAKI SHUNPEI
IPC分类号： H01L29/786 , C23C14/14 , C23C14/34 , G02F1/1345 , G02F1/1368 , H01L21/285 , H01L29/423 , H01L29/49
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high thin film transistor (TFT) characteristics.SOLUTION: A high-purity target is used as a target, a single gas of argon (Ar) is used as a sputtering gas, the substrate temperature is set to 300°C or less, the sputtering electric power is set to 1-9 kW, and the sputtering gas pressure is set to 1.0-3.0 Pa, whereby a film has a stress of -1×10to 1×10dyn/cm. By the use of a conductive film with low electrical resistivity (40 μΩ cm or less) containing 0.03 ppm or less, preferably 0.01 ppm or less, of sodium for a gate wiring material of a TFT or for another wiring material, a semiconductor device including the TFT can have drastically improved operation performance or reliability.
摘要翻译：要解决的问题：提供具有高薄膜晶体管（TFT）特性的半导体器件。解决方案：使用高纯度靶作为目标，使用氩气（Ar）的单一气体作为溅射气体，将基板温度设定为300℃以下，将溅射电力设定为 1-9kW，溅射气体压力设定为1.0〜3.0Pa，膜的应力为-1×10 10 10 dyn / cm 2 。通过使用对于TFT或其它配线材料的栅极配线材料含有0.03ppm以下，优选为0.01ppm以下的低电阻率（40μΩcm以下）的导电膜，包括： TFT可以显着提高操作性能或可靠性。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011124590A Method of manufacturing light emitting device 有权
标题翻译：制造发光装置的方法
公开(公告)号：JP2011124590A
公开(公告)日：2011-06-23
申请号：JP2011007139
申请日：2011-01-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TAKAYAMA TORU , MARUYAMA JUNYA , FUKUMOTO YUMIKO
IPC分类号： H01L27/12 , G02F1/1362 , H01L21/02 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L51/50 , H05B33/10
CPC分类号： H01L27/1266 , H01L23/291 , H01L27/1214 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer having a small layer to be peeled but also a layer having a large area to be peeled to be separated entirely in good yield, and further to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and also to provide a method of manufacturing the same. SOLUTION: When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided to be in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization to form a metal oxide layer 16, complete separation can be achieved inside the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12 through a physical means. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供不会对被剥离层造成损害的剥离方法，并且不仅允许具有小层的层被剥离，而且允许具有大的剥离面积的层是完全以良好的收率分离，并且进一步将要剥离的层粘合到各种基材上以提供更轻的半导体器件，并且还提供其制造方法。解决方案：当在基板上设置金属层11时，提供与金属层11接触的氧化物层12，形成被剥离层13，并且金属层11被照射激光束进行氧化以形成金属氧化物层16，可以通过物理手段在金属氧化物层12内部或金属氧化物层16和氧化物层12之间的界面处实现完全分离。版权所有（C）2011，JPO＆INPIT

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