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    • 1. 发明专利
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2008153533A
    • 2008-07-03
    • JP2006341646
    • 2006-12-19
    • Seiko Epson Corpセイコーエプソン株式会社
    • KATO JURIOKA HIDEAKIUEHARA MASAMITSU
    • H01L21/306
    • H01L21/3141H01L21/187H01L21/2007H01L21/823481H01L21/84
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing deterioration in the etching selection ratio of SiGe to Si when etching the SiGe formed on the Si.
      SOLUTION: An SiGe layer 11 is formed on an Si substrate 1 and an Si layer 13 is formed on the SiGe layer 11. The Si layer 13 and an SiGe layer 11 are etched partially, a groove H exposing the side of the SiGe layer 11 is formed, and a dummy pattern DP, which exposes at least one surface of the Si substrate 1 and the Si layer 13 from a part under the SiGe layer 11, is formed. After that, the SiGe layer 11 is wet-etched via the groove H, thus forming a cavity 25 between the Si substrate 1 and an Si layer 13. In the process for forming the cavity 25, the SiGe layer 11 is etched while etchant is in contact with the dummy pattern DP.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 解决的问题:提供一种制造半导体器件的方法,当蚀刻形成在Si上的SiGe时,能够抑制SiGe与Si的蚀刻选择比的劣化。 解决方案:在Si衬底1上形成SiGe层11,并且在SiGe层11上形成Si层13. Si层13和SiGe层11被部分蚀刻,暴露在 形成SiGe层11,并且形成从SiGe层11下面的部分露出Si衬底1和Si层13的至少一个表面的虚拟图案DP。 之后,通过槽H对SiGe层11进行湿蚀刻,从而在Si衬底1和Si层13之间形成空腔25.在形成空腔25的工艺中,刻蚀SiGe层11,蚀刻剂为 与虚拟图案DP接触。 版权所有(C)2008,JPO&INPIT
    • 4. 发明专利
    • 4-phenylbenzophenone derivative and method for producing 4-phenylbenzophenone derivative
    • 4-苯基苯并噻吩衍生物和生产4-苯基苯并噻吩衍生物的方法
    • JP2004307369A
    • 2004-11-04
    • JP2003100929
    • 2003-04-03
    • Seiko Epson Corpセイコーエプソン株式会社
    • TERAO KOICHIUEHARA MASAMITSU
    • C07C205/45C07B61/00C07C201/12C07C209/36C07C211/50C07C211/52
    • PROBLEM TO BE SOLVED: To obtain a 4-phenylbenzophenone derivative which can suitably be used as a raw material monomer for polymer materials having excellent light resistance, especially orientation materials for liquid crystals, and to provide a method for producing the 4-phenylbenzophenone derivative.
      SOLUTION: The 4-phenylbenzophenone derivative is represented by formula (II) (R
      1 , R
      2 and R
      3 are each independently H, a 1 to 5C linear or branched alkyl, or a fluorinated alkyl group in which at least a part of hydrogen atoms constituting the alkyl group is substituted with one or more fluorine atoms). The method for producing the 4-phenylbenzophenone derivative comprises a coupling process for reacting a benzophenone derivative with an arylboric acid derivative in the presence of a catalyst in a basic solution.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了获得适合用作耐光性优异的聚合物材料的原料单体的4-苯基二苯甲酮衍生物,特别是用于液晶的取向材料的方法, 苯基二苯甲酮衍生物。 解决方案:4-苯基二苯甲酮衍生物由式(II)表示(R SB 1,R SB 2,R SB 3,R SB 3,各自独立地表示) H,1〜5的直链或支链烷基,或其中至少一部分构成烷基的氢原子被一个或多个氟原子取代的氟代烷基)。 4-苯基二苯甲酮衍生物的制造方法包括使二苯甲酮衍生物与芳基硼酸衍生物在催化剂存在下在碱性溶液中反应的偶联方法。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Electronic device and electronic equipment
    • 电子设备和电子设备
    • JP2007027529A
    • 2007-02-01
    • JP2005209549
    • 2005-07-20
    • Seiko Epson Corpセイコーエプソン株式会社
    • UEHARA MASAMITSU
    • H01L51/50H01L51/42H05B33/10
    • H05B33/14C09K11/06C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1029H01L51/0039H01L51/0058H01L51/006H01L51/0072H01L51/5048Y02E10/549
    • PROBLEM TO BE SOLVED: To provide an electronic device which comprises an intermediate layer enabling smooth transfer of carriers between layers and has an excellent characteristic, and also reliable electronic equipment using the device. SOLUTION: The electronic device comprises a pair of electrodes and a laminate 9 disposed therebetween. The laiminate 9 has a hole transfer layer (first organic semiconductor layer) 4, a luminous layer (second organic semiconductor layer) 6, and an intermediate layer 5 provided between the layers 4 and 6 to be contacted with the both layers. The intermediate layer 4 is made of a compound expressed by formula A 1 -B-A 2 as its main material. In the formula, A 1 and A 2 independently denote a group containing at least one of first to third class amino groups, a hydroxyl group, a carbonyl group, and a carboxyl group. Either one of A 1 and A 2 is only required. B denotes a group containing a fluorene ring. In the compound, the groups A 1 and A 2 are orientated toward the hole transfer layer 4, and the group B is orientated toward the luminous layer 6. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种电子设备,其包括能够平滑地传递层之间的载体并具有优异特性的中间层,以及使用该设备的可靠的电子设备。 解决方案:电子设备包括一对电极和设置在它们之间的层压体9。 引物9具有空穴转移层(第一有机半导体层)4,发光层(第二有机半导体层)6和设置在与层之间接触的层4和6之间的中间层5。 中间层4由作为其主要材料的由式A -B-A 2 表示的化合物制成。 在该式中,A 1 和A 2 独立地表示含有至少一个第一至第三类氨基,羟基,羰基和羧基的基团 组。 只需要A 1 和A 2 中的任何一个。 B表示含有芴环的基团。 在化合物中,基团A 1 和A 2 朝向空穴转移层4取向,并且组B朝向发光层6取向。 (C)2007,JPO&INPIT
    • 7. 发明专利
    • Positive hole transportation material and refining method of positive hole transportation material
    • 正交孔运输材料的正交孔材料和精炼方法
    • JP2005044615A
    • 2005-02-17
    • JP2003206953
    • 2003-08-08
    • Seiko Epson Corpセイコーエプソン株式会社
    • SHINOHARA YUJIISHII TAKASHISHIMAZU MASAMITSUUEHARA MASAMITSU
    • C09K11/06H01L51/30H01L51/40H01L51/50H05B33/22H05B33/14
    • H01L51/0037H01L51/0003H01L51/5048
    • PROBLEM TO BE SOLVED: To provide a positive hole transportation material capable of restraining attenuation of emission luminance of an organic EL element; and to provide a refining method of the positive hole transportation material. SOLUTION: In the organic EL element 1, when a current is carried (a voltage is applied) between a positive electrode 3 and a negative electrode 5, positive holes and electrons are moved in a positive transportation layer 41 and in an electron transportation layer 43, respectively, and the positive holes and electrons are recombined with each other in a luminescent layer 42. In the luminescent layer 42, excitons are generated by energy emitted in the recombination, and energy (fluorescence and phosphorescence) is emitted when the excitons return to a base state. The positive hole transportation material is used for the positive hole transportation layer 41, and the content of cationic impurity and the content of anionic impurity are held down. Thereby, the attenuation of the emission luminance of the EL element 1 can be restrained. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供能够抑制有机EL元件的发光亮度衰减的空穴传输材料; 并提供空穴传输材料的精制方法。 解决方案:在有机EL元件1中,当在正极3和负极5之间承载电流(施加电压)时,正空穴和电子在正性传输层41和电子中移动 传输层43,并且正空穴和电子在发光层42中彼此重新组合。在发光层42中,通过在复合中发射的能量产生激子,并且当发射层42中的能量(荧光和磷光) 激子返回基地状态。 正空穴传输材料用于空穴传输层41,阳离子杂质含量和阴离子杂质含量被抑制。 由此,可以抑制EL元件1的发光亮度的衰减。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Method to predict behavior of injected atom and defective ingredient
    • 预防注射原位和缺陷成分行为的方法
    • JP2004312015A
    • 2004-11-04
    • JP2004109359
    • 2004-04-01
    • California Inst Of TechnologySeiko Epson Corpカリフォルニア・インスティテュート・オブ・テクノロジーCalifornia Institute Of Technologyセイコーエプソン株式会社
    • SATO YUZURUUEHARA MASAMITSUHWANG GYEONG SWILLIAM A GODDARD
    • H01L21/22G06F17/50H01L21/265
    • H01L21/26513G06F17/5018G06F2217/10
    • PROBLEM TO BE SOLVED: To provide a method to predict behavior of injected atoms and defective ingredients in a substrate lattice formed from substrate material to improve electronic device performance.
      SOLUTION: This is a technique to predict behavior of injected atoms and defective ingredients in a substrate lattice formed from substrate material to obtain basic data for micro process aggregation that may be generated at the time of one or more material process operations. The data include those showing the energetics and structure of a certain status that may be generated at the time of process kinetics and material process operations in micro process aggregation. From the basic data and external conditional aggregation, the distribution of injected atoms and defective ingredients in the substrate lattice is predicted. The distribution of one or more high-speed ingredients is predicted after the concentration of each specific high-speed ingredient is calculated by solving a primary relation in the time period before the high-speed ingredient reaches its pseudo-steady status, and the concentration of the high-speed ingredient is calculated by solving a secondary relation based on other ingredients following the foregoing time period. The pseudo-steady status of the high-speed ingredient means that the concentration of the high-speed ingredient is determined by the concentration of other ingredients.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于预测由衬底材料形成的衬底格子中注入的原子和有缺陷的成分的行为以提高电子器件性能的方法。 解决方案:这是一种技术,用于预测由衬底材料形成的衬底晶格中的注入原子和有缺陷成分的行为,以获得可在一个或多个材料工艺操作时产生的微过程聚集的基本数据。 数据包括显示在微过程聚合过程动力学和材料过程操作时可能产生的某些状态的能量和结构的那些数据。 从基础数据和外部条件聚合可以预测衬底晶格中注入的原子和缺陷成分的分布。 通过在高速成分达到其稳定状态之前的时间段内解决主要关系来计算每个特定高速成分的浓度之后,预测一种或多种高速成分的分布, 通过在上述时间段之后解决基于其他成分的二次关系来计算高速成分。 高速成分的伪稳态意味着高速成分的浓度由其他成分的浓度决定。 版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • Substrate for electronic device, its manufacturing method, electronic device and electronic apparatus
    • 电子设备用基板及其制造方法,电子设备及电子设备
    • JP2007005420A
    • 2007-01-11
    • JP2005181568
    • 2005-06-22
    • Seiko Epson Corpセイコーエプソン株式会社
    • UEHARA MASAMITSU
    • H01L51/50H05B33/10
    • H01L51/005H01L51/0012H01L51/0043H01L51/0065H01L51/0096H01L51/50H01L51/5048H01L51/5088H01L51/5221H01L2251/308H05B33/22Y02E10/549Y02P70/521Y10T428/266
    • PROBLEM TO BE SOLVED: To provide a substrate for an electronic device exhibiting excellent carrier transportability and its manufacturing method, and to provide an electronic device excellent in characteristics and a highly reliable electronic apparatus employing such a substrate for the electronic device. SOLUTION: The substrate for the electronic device comprises a light emitting layer 5 (organic semiconductor layer), a cathode 7 (inorganic layer), and an intermediate layer 6 formed between the light emitting layer 5 and the cathode 7 to touch both of them. The intermediate layer 6 principally comprises a compound (1) represented by a general formula R-X-O-M wherein a hydrocarbon group R is oriented to the light emitting layer 5 side and an atom M is oriented to the cathode 7 side along the thickness direction of the intermediate layer 6. In the general formula, R represents a hydrocarbon group, X represents one of a single bond, a carbonyl group or a sulfonyl group, and M represents either of a hydrogen atom or a metal atom. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种具有优异的载体输送性的电子器件的基板及其制造方法,并且提供一种具有优异的特性的电子器件和使用这种用于电子器件的基板的高可靠性的电子设备。 解决方案:用于电子器件的衬底包括发光层5(有机半导体层),阴极7(无机层)和形成在发光层5和阴极7之间的中间层6以接触两者 的他们。 中间层6主要包括由通式RXOM表示的化合物(1),其中烃基R取向于发光层5侧,原子M沿着中间层的厚度方向定向到阴极7侧 在通式中,R表示烃基,X表示单键,羰基或磺酰基之一,M表示氢原子或金属原子。 版权所有(C)2007,JPO&INPIT
    • 10. 发明专利
    • Manufacturing method for substrate for electron device, substrate for electron device, electron device and electronic equipment
    • 电子设备用基板,电子设备用基板,电子设备及电子设备的制造方法
    • JP2007005057A
    • 2007-01-11
    • JP2005181570
    • 2005-06-22
    • Seiko Epson Corpセイコーエプソン株式会社
    • UEHARA MASAMITSU
    • H05B33/10C09K11/06H01L51/50
    • H05B33/10H01L51/0006H01L51/0043H01L51/0068H01L51/0071H01L51/0072H01L51/5088H01L2251/308H05B33/22
    • PROBLEM TO BE SOLVED: To provide a manufacturing method for a substrate for an electron device with which the substrate for the electron device having excellent carrier transferring ability is manufactured, and also to provide the substrate for the electron device having the excellent carrier transferring capability, the electron device provided with the substrate for the electron device and having excellent characteristics, and reliable electronic equipment. SOLUTION: The manufacturing method for the substrate for the electron device of the present invention is a manufacturing method for the substrate for the electron device having: an organic semiconductor layer; an electrode (positive electrode 7); and an intermediate layer 4 provided between the organic semiconductor layer and the positive electrode 7 to contact both of them and using an organic substance having a function to transport a carrier as a main material. The manufacturing method for the substrate for the electron device comprises processes of: forming the intermediate layer 4 by collecting the organic substance charged in the liquid in the positive electrode 7 by applying voltage to the liquid with the positive electrode 7 as one electrode in such a state that the positive electrode 7 contacts the liquid containing the organic substance; and providing an organic semiconductor layer in a surface of the intermediate layer 4 opposite to the positive electrode 7. COPYRIGHT: (C)2007,JPO&INPIT
    • 解决问题的方案为了提供制造具有优异载流子传输能力的电子器件用基板的电子器件用基板的制造方法,还提供具有优良载体的电子器件用基板 具有电子器件用基板的电子器件,具有优异的特性,可靠的电子设备。 解决方案:本发明的电子器件用基板的制造方法是具有:有机半导体层的电子器件用基板的制造方法, 电极(正电极7); 以及设置在有机半导体层和正电极7之间以与它们接触并使用具有作为主要材料输送载体的功能的有机物质的中间层4。 用于电子器件的衬底的制造方法包括以下处理:通过以正电极7作为一个电极向液体施加电压而收集在正极7中的液体中的有机物质来形成中间层4 表示正极7接触含有有机物质的液体; 并在中间层4的与正电极7相对的表面上提供有机半导体层。(C)2007,JPO&INPIT