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    • 3. 发明专利
    • Method of forming hetero-junction in organic semiconductor polymer
    • 在有机半导体聚合物中形成异质结的方法
    • JP2006332636A
    • 2006-12-07
    • JP2006123033
    • 2006-04-27
    • Seiko Epson Corpセイコーエプソン株式会社
    • NEWSOME CHRISTOPHERKUGLER THOMASLI SHUNPURUSSEL DAVID
    • H01L51/40B41M5/00B41M5/50B41M5/52H01L21/368H01L29/786H01L33/00H01L51/00H01L51/05H01L51/42H01L51/50H05B33/10
    • H01L51/0005H01L51/0007H01L51/424Y02E10/549
    • PROBLEM TO BE SOLVED: To provide a method of forming a hetero-junction of adjacent first and second organic semiconductor polymer layers.
      SOLUTION: First, a first organic semiconductor polymer layer 12 is formed on a substrate 10. Then, the solution of a film formation material is deposited on it. Since the first organic semiconductor polymer 12 is insoluble to this solution, it is not influenced. A temporary film 14 having a thickness of 20 nm is formed by drying. Then, the solution 16 of the second organic semiconductor polymer dissolved in an organic solvent is deposited on the above temporary film 14, and is made to dry. The thickness of the above temporary film 14 is set so that a part for the thickness may be permeated between the time durations by which the solution 15 of the above second organic semiconductor polymer is dried. Thereby, the temporary film 14 is decomposed without giving a damage to the first organic semiconductor polymer layer 12, and the second organic semiconductor layer 19 is formed so that it may touch on the above first organic semiconductor polymer layer 12.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 解决的问题:提供形成相邻的第一和第二有机半导体聚合物层的异质结的方法。 解决方案:首先,在基板10上形成第一有机半导体聚合物层12.然后,在其上沉积成膜材料的溶液。 由于第一有机半导体聚合物12不溶于该溶液,因此不受影响。 通过干燥形成厚度为20nm的临时膜14。 然后,将溶解在有机溶剂中的第二有机半导体聚合物溶液16沉积在上述临时膜14上,使其干燥。 上述临时膜14的厚度被设定为使得可以在上述第二有机半导体聚合物的溶液15干燥的时间间隔之间渗透厚度部分。 因此,临时膜14不会对第一有机半导体聚合物层12造成损害而分解,并且形成第二有机半导体层19,使得其可以接触上述第一有机半导体聚合物层12。版权所有: (C)2007,JPO&INPIT
    • 4. 发明专利
    • Method of manufacturing semiconductor element from dispersed particle of semiconductor
    • 从半导体分散粒子制造半导体元件的方法
    • JP2006041495A
    • 2006-02-09
    • JP2005180203
    • 2005-06-21
    • Seiko Epson Corpセイコーエプソン株式会社
    • KUGLER THOMASNEWSOME CHRISTOPHERRUSSEL DAVIDLI SHUNPU
    • H01L29/786H01L21/208H01L21/336H01L21/368H01L51/00H01L51/05H01L51/50H05B33/10
    • H01L21/02568H01L21/0256H01L21/02576H01L21/02579H01L21/02601H01L21/02628H01L51/0003H01L51/0037H01L51/0053H01L51/007H01L51/0545
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor elements from dispersed particles of a semiconductor.
      SOLUTION: This invention is a method of manufacturing semiconductor elements, such as films or the like. The method comprises a first process (i) of laminating a suspension containing first semiconductor particles and a solution containing a second semiconductor or its precursor on the surface of a board so as to produce a mixture containing the first semiconductor particles suspended in a liquid phase containing the second semiconductor or its precursor on the board and a second process (ii) of solidifying the mixture so as to form semiconductor elements containing the first semiconductor particles in a second semiconductor matrix which electrically connects the first semiconductor adjacent particles together. The first and second semiconductor are of the same conductivity type and formed of the same or other materials. The semiconductor elements are high enough in bulk charge carrier mobility and suitable for use in a microprocessor or other high-performance electric devices even when they are not subjected to sintering after lamination.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供从半导体的分散颗粒制造半导体元件的方法。 解决方案:本发明是制造诸如膜等的半导体元件的方法。 该方法包括在板的表面上层压包含第一半导体颗粒的悬浮液和含有第二半导体或其前体的溶液的第一工艺(i),以产生包含悬浮在液相中的第一半导体颗粒的混合物 第二半导体或其前体,以及使混合物固化的第二工艺(ii),以便在将第一半导体相邻颗粒电连接在一起的第二半导体矩阵中形成包含第一半导体颗粒的半导体元件。 第一和第二半导体具有相同的导电类型并且由相同或其它材料形成。 半导体元件在体积电荷载流子迁移率方面足够高,并且即使在层压之后它们不经历烧结时也适用于微处理器或其它高性能电子器件。 版权所有(C)2006,JPO&NCIPI