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1. 发明专利

JP2005314216A Method for manufacturing substrate wafer for low-defect semiconductor component, component obtained by the same, and its use 审中-公开
标题翻译：用于制造低缺陷半导体元件的基板波形的方法，由其获得的元件及其使用
公开(公告)号：JP2005314216A
公开(公告)日：2005-11-10
申请号：JP2005055656
申请日：2005-03-01
申请人： Schott Ag , ショットアクチエンゲゼルシャフト
发明人： CLAUDIO GORGONI , SPEIT BURKHARD , KOEHLER INGO , GUINCHARD JAQUES , BLAUM PETER , BEIER WOLFRAM
IPC分类号： B28D5/00 , C30B29/20 , C30B33/00 , C30B33/02 , H01L21/20
CPC分类号： C30B29/20 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide an electronic component of which growth defects produced by crystallographic defects, especially pin holes, nanopipes and/or pits and hilogs are less than those of a currently known electronic element.
SOLUTION: The method for manufacturing a substrate wafer for a low-defect semiconductor component includes (a) a process for forming a single crystal having a [0001] plane perpendicular to a c-axis thereof, (b) a process for dividing the single crystal into thin disks each having at least one disk surface to be coated, (c) a process for smoothing at least one disk surface and (d) a process for tempering at least one thin disk at a temperature higher than 1770 K.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种电子部件，其中由晶体缺陷，特别是针孔，纳米管和/或凹坑和hilog产生的生长缺陷小于目前已知的电子元件的电子部件。解决方案：用于制造用于低缺陷半导体部件的衬底晶片的方法包括（a）用于形成具有垂直于其c轴的[0001]面的单晶的工艺，（b）将单晶分成具有至少一个要涂覆的盘表面的薄盘，（c）使至少一个盘表面平滑的工艺和（d）在高于1770K的温度下回火至少一个薄盘的工艺（C）2006年，JPO＆NCIPI

2. 发明专利

JP2005260225A Method for manufacturing wafer with few surface defects, wafer obtained by said method, and electronic component made of the wafer 有权
标题翻译：用于制造具有较少表面缺陷的波形的方法，由该方法获得的波形和该波形的电子元件
公开(公告)号：JP2005260225A
公开(公告)日：2005-09-22
申请号：JP2005055622
申请日：2005-03-01
申请人： Schott Ag , ショットアーゲーSchott AG
发明人： BLAUM PETER , SPEIT BURKHARD , KOEHLER INGO , RUDINGER BERND , BEIER WOLFRAM
IPC分类号： B24B1/00 , B24B37/04 , H01L21/304 , H01S5/02
CPC分类号： B24B37/30 , B24B37/042
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing wafer substrates, which allows semiconductor components of which semiconductor layers have low-level defects at most and which have no pits especially on their surfaces.
SOLUTION: A method for manufacturing wafer substrates comprises: a process (a) of polishing at least one of active surfaces, which is to be coated, of a wafer by using a polishing means including polishing components in order to smooth the at least one of the active surfaces; and a process (b) of changing the polishing direction of a polishing tool which polishes the at least one of the active surfaces so that each area or each position of the at least one of the active surfaces is uniformly polished by polishing action of the polishing tool which covers 360° statistically during polishing operation. To eliminate almost all of the surface defects on the at least one of the active surfaces, the at least one of the active surfaces is coated.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造晶片基板的方法，其允许半导体层最多具有低水平缺陷并且其表面上没有凹坑的半导体元件。解决方案：一种用于制造晶片衬底的方法包括：通过使用包括抛光组分的抛光装置来抛光晶片的待涂覆的活性表面中的至少一个的工艺（a），以使光滑至少一个活动表面; 以及改变研磨工具的抛光方向的方法（b），抛光工具抛光至少一个活性表面，使得至少一个活性表面的每个区域或每个位置通过抛光的抛光作用被均匀抛光在抛光操作期间统计地覆盖360°的工具。为了消除至少一个活性表面上的几乎所有的表面缺陷，至少一个活性表面被涂覆。版权所有（C）2005，JPO＆NCIPI

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