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1. 发明专利

JP2009218504A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009218504A
公开(公告)日：2009-09-24
申请号：JP2008063092
申请日：2008-03-12
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： DOBASHI HIROYUKI , SHIKANUMA YOICHI , YAMADA JUNJI , UEMOTO AKIRA , SAITO KIMIHIDE
IPC分类号： H01L21/3205 , H01L21/301 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To improve reliability by suppressing the penetration of cracks from a sidewall of a semiconductor chip in dicing.
SOLUTION: On an edge of the surface of a semiconductor chip region 10, a sealing ring 30 for crack stoppers is formed while surrounding an integrated circuit region 31. In the sealing ring 30 for crack stoppers, namely a laminated structure formed on a semiconductor substrate 11 outside the integrated circuit region 31, first, second, and third dummy metal layers 20, 21, 22 are laminated while sandwiching first, second, and third interlayer insulating films 12, 14, 16, respectively. The first, second, and third dummy metal layers 20, 21, 22 are electrically insulated from the semiconductor element and wiring of the integrated circuit region 31 by the first to third interlayer insulating films 12, 14, 16.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在切割中抑制来自半导体芯片的侧壁的裂纹的渗透来提高可靠性。解决方案：在半导体芯片区域10的表面的边缘上，形成用于防止裂缝的密封环30，同时围绕集成电路区域31.在用于裂缝阻挡物的密封环30中，即形成在在集成电路区域31的外侧的半导体衬底11，分别夹着第一，第二和第三层间绝缘膜12,16的层叠第一，第二和第三虚设金属层20,21,22。第一，第二和第三虚设金属层20,21,22通过第一至第三层间绝缘膜12,14,16与半导体元件和集成电路区域31的布线电绝缘。（版权所有： C）2009年，JPO＆INPIT

2. 发明专利

JP2009218503A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009218503A
公开(公告)日：2009-09-24
申请号：JP2008063091
申请日：2008-03-12
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： DOBASHI HIROYUKI , SHIKANUMA YOICHI , YAMADA JUNJI , SAITO KIMIHIDE
IPC分类号： H01L21/768 , H01L21/301 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L23/522 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To improve reliability by suppressing the penetration of cracks from a sidewall of a semiconductor chip in dicing.
SOLUTION: On the edge of the surface of a semiconductor chip region 10, a planarization insulation film region 30 is formed while surrounding an integrated circuit region 31. The planarization insulation film region 30 is formed by replacing a portion where a conventional dummy metal layer has been formed with a dummy insulation film. On a first interlayer insulating film 12 extended from the integrated circuit region 31, three dummy insulation film patterns 20 are formed at a fixed interval. Also, a second interlayer insulating film 14 extended from the integrated circuit region 31 covers the three dummy insulation film patterns 20, and three dummy insulation film patterns 21 are formed at a fixed interval also in the second interlayer insulation film 14. Furthermore, a third interlayer insulation film 16 extended from the integrated circuit region 31 covers the three dummy insulation film patterns 21, and three dummy insulation film patterns 22 are formed at a fixed interval also in the third interlayer insulation film 16.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在切割中抑制来自半导体芯片的侧壁的裂纹的渗透来提高可靠性。解决方案：在半导体芯片区域10的表面的边缘处，形成平坦化绝缘膜区域30，同时围绕集成电路区域31。平坦化绝缘膜区域30通过替换传统虚拟器件金属层已经形成有虚拟绝缘膜。在从集成电路区域31延伸的第一层间绝缘膜12上，以固定间隔形成三个虚拟绝缘膜图案20。此外，从集成电路区域31延伸的第二层间绝缘膜14覆盖三个虚拟绝缘膜图案20，并且在第二层间绝缘膜14中也以固定间隔形成三个虚拟绝缘膜图案21.此外，第三层从集成电路区域31延伸的层间绝缘膜16覆盖三个虚拟绝缘膜图案21，并且在第三层间绝缘膜16中以固定间隔形成三个虚拟绝缘膜图案22.（C） 2009年，JPO＆INPIT

3. 发明专利

JP2005217282A Method and apparatus for forming coating film 审中-公开
标题翻译：用于形成涂膜的方法和装置
公开(公告)号：JP2005217282A
公开(公告)日：2005-08-11
申请号：JP2004023730
申请日：2004-01-30
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , SAITO KIMIHIDE
IPC分类号： G03F7/16 , B05C5/00 , B05C11/08 , B05C11/10 , H01L21/027 , H01L21/31 , H01L21/316 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a coating film forming method and coating film forming apparatus in which a coating liquid is applied to the surface of a substrate, an air current flowing from the center to the outside is then formed along with the surface, and an intra-surface uniform coating film can be formed on the surface of the substrate, by controlling the flow of the coating liquid on the substrate when forming the film by drying the coating liquid under pressure reduction. SOLUTION: A liquid film is formed by supplying a coating liquid over the surface of a substrate so as to form a non-coated area all over the circumference at the edge of the substrate in the state of horizontally holding the substrate, the substrate is then carried into a treatment container, and pressure in the treatment container is reduced while confronting a rectifier plate to the surface of the substrate near the substrate, thereby forming an air current flowing from the center to the outside along with the surface of the substrate, and drying the liquid film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种涂膜形成方法和涂膜形成装置，其中将涂布液施加到基板的表面，然后与中心向外形成从中心向外部流动的气流表面，并且可以通过在通过在减压下干燥涂布液来形成膜时控制基板上的涂布液的流动，从而在基板的表面上形成表面内均匀的涂膜。解决方案：通过在基板的表面上提供涂布液以在水平保持基板的状态下在基板的边缘处在整个圆周上形成未涂覆区域而形成液膜，然后将基板输送到处理容器中，并且在将整流板面对基板附近的基板的表面的同时减小处理容器中的压力，从而形成从中心向外流动的气流以及底物，并干燥液膜。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005116553A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005116553A
公开(公告)日：2005-04-28
申请号：JP2003344753
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , SAITO KIMIHIDE , MIKATA YUICHI
IPC分类号： B05D1/26 , B05C5/00 , B05C13/00 , B05D7/00 , H01L21/31 , H01L21/312 , H01L21/768
CPC分类号： H01L21/6715 , G03F7/162 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To surely apply a coating liquid onto all the surface of a wafer so as to form a coating film when the coating liquid is applied on the surface of the wafer in a manner wherein a picture is drawn with a single stroke of the brush, while a coating liquid nozzle is made to scan the surface of the wafer in a lateral direction and while the wafer is intermittently moved in a longitudinal direction.
SOLUTION: The wafer is so oriented as to enable the scanning direction of the coating liquid nozzle 5 to intersect with any of dicing lines D cut in the surface of the wafer W to split the wafer W into discrete chips, then a liquid coating operation is carried out, and the wafer W is reoriented so as to recover its original orientation and then unloaded. The set angles of the wafers W of each type are previously written in their recipes in accordance with categoris the wafter W, and the orientation of the wafer W is set up by selection of the recipe.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了确保将涂布液施加到晶片的所有表面上，以便当涂覆液体以如下方式施加在晶片的表面上时形成涂膜，其中以同时使涂布液喷嘴在横向方向上扫描晶片的表面，同时晶片在纵向上间歇地移动。解决方案：晶片被定向成使得涂布液喷嘴5的扫描方向能够与在晶片W的表面上切割的任何切割线D交叉，以将晶片W分离成离散的芯片，然后将液体进行涂布操作，并且将晶片W重新定向以恢复其原始取向然后卸载。每种类型的晶片W的设定角度根据分类W预先写入其配方中，并且通过选择配方来建立晶片W的取向。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JPH11274100A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPH11274100A
公开(公告)日：1999-10-08
申请号：JP7878198
申请日：1998-03-26
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KITAGAWA KATSUHIKO , SAITO KIMIHIDE
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/768 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To achieve uniform distribution of impurity in a BPSG film and prevent eaves of a contact produced during annealing by providing an impurity implantation preventing film on the surface of the BPSG film, so that an impurity implanted to lower the contact resistance of a diffused region is not implanted into the BPSG film.
SOLUTION: A diffused region 22 is formed in a semiconductor substrate 21, on which gate insulating film, a TEOS film, a BPSG film, etc., are formed. An impurity implantation preventing film 25 is formed on a BPSG film 24. In general, although ions are implanted into contact holes 26 for the purpose to lower the contact resistance of the diffusion region 22, the impurity implantation preventing film 25 prevents the impurity from reaching the BPSG film 24 as well as makes a material with an etching rate which is faster than that of the BPSG film.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：为了实现BPSG膜中的杂质的均匀分布并且通过在BPSG膜的表面上提供杂质注入防止膜来防止在退火过程中产生的接触的檐，使得注入的杂质降低了接触电阻扩散区域不会植入到BPSG膜中。解决方案：扩散区域22形成在其上形成有栅极绝缘膜，TEOS膜，BPSG膜等的半导体基板21中。在BPSG膜24上形成杂质注入防止膜25.通常，为了降低扩散区22的接触电阻，将离子注入到接触孔26中，使杂质注入防止膜25防止杂质到达 BPSG膜24，并且制造具有比BPSG膜快的蚀刻速率的材料。

6. 发明专利

JP2005019475A Device and method for forming coating film 审中-公开
标题翻译：用于形成涂膜的装置和方法
公开(公告)号：JP2005019475A
公开(公告)日：2005-01-20
申请号：JP2003178625
申请日：2003-06-23
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , SAITO KIMIHIDE
IPC分类号： B05D3/00 , B05C9/12 , B05C11/00 , B05C13/02 , H01L21/027 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a device and method for forming coating film by which the vaporization of a solvent from a coating liquid applied to the surface of a substrate can be suppressed at the time of transporting the substrate coated with the coating liquid from a coating unit to the unit of the next step.
SOLUTION: A substrate transporting means 23 is provided with holding arms 41a-41c constituted in three stages, and a drying preventing plate 5 having a larger size than the substrate has above the lowest third holding arm 41c when the arm 41c is at the transporting position. At the time of transporting a wafer from the coating unit 24 which applies the coating liquid containing the components of the applied film and the solvent to the surface of the wafer to a low-pressure drying unit 25 which removes the solvent from the coating liquid applied to the surface of the wafer by vaporizing the solvent, the wafer is mounted on the third holding arm 41c and the whole surface of the wafer is covered with the drying preventing plate 5 through a space. Consequently, the thickness uniformity of the obtained applied film can be improved, because the vaporization of the solvent from the applied film formed on the surface of the wafer can be suppressed while the wafer is transported.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于形成涂膜的装置和方法，通过该装置和方法，可以在运送涂覆有涂层的基板时抑制涂布在基板表面上的涂布液的溶剂蒸发液体从涂层单元到下一步的单位。解决方案：基板传送装置23设置有三级构成的保持臂41a-41c，当臂41c处于位置时，具有比基板大的干燥防止板5在最低的第三保持臂41c的上方运输位置。在将包含涂膜和溶剂的成分的涂布液施加到晶片表面的涂布单元24的时候，由低压干燥单元25除去涂布液中的溶剂通过蒸发溶剂到晶片的表面，将晶片安装在第三保持臂41c上，并且通过空间将干燥防止板5覆盖晶片的整个表面。因此，可以提高所得涂膜的厚度均匀性，因为可以在输送晶片的同时抑制形成在晶片表面上的涂膜的溶剂蒸发。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005013787A Coating film-forming device and coating film-forming method 审中-公开
标题翻译：涂膜成膜装置和涂膜成膜方法
公开(公告)号：JP2005013787A
公开(公告)日：2005-01-20
申请号：JP2003178626
申请日：2003-06-23
申请人： Sanyo Electric Co Ltd , Tokyo Electron Ltd , Toshiba Corp , 三洋電機株式会社 , 東京エレクトロン株式会社 , 株式会社東芝
发明人： MIZUNO GOSHI , MIKATA YUICHI , SAITO KIMIHIDE
IPC分类号： B05D1/26 , B05C5/00 , B05C11/06 , B05C11/10 , G03F7/16 , H01L21/00 , H01L21/027 , H01L21/31
CPC分类号： H01L21/6715
摘要： PROBLEM TO BE SOLVED: To form an insulating film of in-plane uniformity on a substrate surface by controlling a drying state of a coating liquid applied on the substrate surface.
SOLUTION: While supplying the coating liquid from a coating liquid nozzle 4 onto a surface of a wafer W held by a substrate holding part for horizontally holding the substrate, the substrate holding part is relatively moved in the back and forth directions to the coating liquid nozzle 4 to apply the coating liquid onto the wafer W surface from a front end edge to a back end edge and whole surface of a region where the coating liquid is applied is covered with a drying prevention plate 6a (6b) provided by facing the surface parallel at a height position of ≤2mm from the wafer W surface. In this case, since a solvent atmosphere of high concentration is formed between the wafer W surface and the drying prevention plate 6a, a drying state of the coating liquid is adjusted within the wafer W surface and thereby the insulating film of uniform film thickness can be formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过控制施加在基板表面上的涂布液的干燥状态，在基板表面上形成面内均匀性的绝缘膜。解决方案：在将涂布液从涂液喷嘴4供给到由用于水平保持基板的基板保持部保持的晶片W的表面上时，基板保持部相对于前后方向相对移动涂布液喷嘴4将涂布液从前端边缘到后端边缘以及施加涂布液的区域的整个表面涂覆在晶片W表面上，用防干燥板6a（6b）覆盖，所述防干燥板6a 表面在与晶片W表面的≤2mm的高度位置平行。在这种情况下，由于在晶片W表面和防干燥板6a之间形成高浓度的溶剂气氛，因此在晶片W表面内调节涂布液的干燥状态，能够使膜厚均匀的绝缘膜形成。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005111295A Coating film formation method and coating film formation device 审中-公开
标题翻译：涂膜成膜方法和涂膜成膜装置
公开(公告)号：JP2005111295A
公开(公告)日：2005-04-28
申请号：JP2003344754
申请日：2003-10-02
申请人： Sanyo Electric Co Ltd , Seiko Epson Corp , Tokyo Electron Ltd , セイコーエプソン株式会社 , 三洋電機株式会社 , 東京エレクトロン株式会社
发明人： MIZUNO GOSHI , TAKEUCHI JUNICHI , SAITO KIMIHIDE
IPC分类号： G03F7/16 , B05C5/00 , B05C11/08 , B05D1/26 , H01L21/027 , H01L21/31 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a coating film formation device capable of forming a coating film having in-surface uniform property regarding film thickness when a surface of a substrate is coated with a coating liquid at a so-called picture drawn with a single stroke of the brush, and a coating film formation method. SOLUTION: First coating liquid lines L1 extending to left/right sides in a first coating step are successively formed on a surface of a wafer W from a front end side of the wafer W and thereafter, a second coating liquid line is formed between the first coating liquid lines L1 adjacent to each other in a second coating step from a rear end side or a front end side of the wafer W. Thereby, the coating liquid coated in the first coating step and the coating liquid coated in the second step are mixed, difference of dried degree of the coated coating liquid becomes small in the surface and film thickness of the coating film can be made uniform. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种涂膜形成装置，其能够形成在基板表面上涂覆有涂布液的表面均匀性的涂膜，所述涂布液以所谓的图片绘制，所述图像用刷子的单行程，以及涂膜形成方法。解决方案：从晶片W的前端侧在晶片W的表面上依次形成在第一涂覆步骤中向左/右侧延伸的第一涂布液体线L1，然后形成第二涂布液线在第二涂布步骤中，从晶片W的后端侧或前端侧彼此相邻的第一涂布液线L1之间。由此，涂布在第一涂布步骤中的涂布液和涂布在第二涂布液涂布涂布液的干燥程度的差异变小，涂膜的膜厚变得均匀。版权所有（C）2005，JPO＆NCIPI

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