专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2012142581A Manufacturing method of light emitting diode and the light emitting diode manufactured by using the manufacturing method 有权
标题翻译：使用制造方法制造的发光二极管和发光二极管的制造方法
公开(公告)号：JP2012142581A
公开(公告)日：2012-07-26
申请号：JP2012000735
申请日：2012-01-05
申请人： Samsung Led Co Ltd , サムソンエルイーディーカンパニーリミテッド.
发明人： LEE DONG JU , LEE HOON-HO , SIM HYUN-UK , KIM YONG-SUN
IPC分类号： H01L33/32 , H01L21/205
CPC分类号： H01L33/0075 , H01L33/007 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the operational capability and the productivity of a process system and also improves crystallinity of a semiconductor layer.SOLUTION: A manufacturing method of a light emitting diode includes: a stage where a first conductive type nitride semiconductor layer 102 and an undoped nitride semiconductor layer 103 are sequentially grown on a substrate 101 in a first reaction chamber; a stage where the substrate on which the first conductive type nitride semiconductor layer and the undoped nitride semiconductor layer are grown is transferred to a second reaction chamber; a stage where an additional first conductive type nitride semiconductor layer is grown on the undoped nitride semiconductor layer in the second reaction chamber; a stage where an active layer 105 is grown on the additional first conductive type nitride semiconductor layer; and a stage where a second conductive type nitride semiconductor layer 106 is grown on the active layer.
摘要翻译：要解决的问题：提供一种提高处理系统的操作能力和生产率并且还提高半导体层的结晶度的制造方法。解决方案：发光二极管的制造方法包括：在第一反应室中在基板101上依次生长第一导电型氮化物半导体层102和未掺杂的氮化物半导体层103的阶段; 将第一导电型氮化物半导体层和未掺杂氮化物半导体层生长的基板转移到第二反应室的阶段; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层的阶段; 在附加的第一导电型氮化物半导体层上生长有源层105的阶段; 以及在有源层上生长第二导电型氮化物半导体层106的阶段。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012222362A Nitride semiconductor light-emitting element 审中-公开
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2012222362A
公开(公告)日：2012-11-12
申请号：JP2012089430
申请日：2012-04-10
申请人： Samsung Led Co Ltd , サムソンエルイーディーカンパニーリミテッド.
发明人： SIM HYUN-UK , YOON SUK HO , TAN SAKONG , KIM JE WON , KIM KI-SUN
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element.SOLUTION: A nitride semiconductor light-emitting element includes: n-type and p-type nitride semiconductor layers; an active layer formed between the n-type and p-type nitride semiconductor layers; and an electron injection layer formed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure in which three or more layers with different band gap energies are stacked. The multilayer structure is repeated twice or more. At least one layer of the layers included in the multilayer structure has smaller band gap energy as getting closer to the active layer. The layer with the smallest band gap energy in the layers included in the multilayer structure is thicker as getting closer to the active layer.
摘要翻译：要解决的问题：提供一种氮化物半导体发光元件。解决方案：氮化物半导体发光元件包括：n型和p型氮化物半导体层; 形成在n型和p型氮化物半导体层之间的有源层; 以及形成在n型氮化物半导体层和有源层之间的电子注入层。电子注入层具有堆叠具有不同带隙能量的3层以上的多层结构。多层结构重复两次以上。包含在多层结构中的至少一层层随着越来越接近有源层而具有较小的带隙能量。包含在多层结构中的层中具有最小带隙能的层随着越来越接近活性层而变厚。版权所有（C）2013，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式