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    • 4. 发明专利
    • Led driving circuit and led array device
    • LED驱动电路和LED阵列设备
    • JP2012169683A
    • 2012-09-06
    • JP2012134573
    • 2012-06-14
    • Samsung Led Co Ltdサムソン エルイーディー カンパニーリミテッド.
    • LEE YONG JINMIN BYOUNG OWNPARK GIL HANONUSHKIN GRIGORY
    • H01L33/00
    • H05B33/0803H05B33/0821Y02B20/342Y10S362/80Y10S362/808
    • PROBLEM TO BE SOLVED: To provide an LED driving circuit and an LED array device in which the number of LEDs employed can be reduced by directly employing an AC voltage.SOLUTION: A ladder network LED circuit of the present invention includes three first branches connected to one another by first middle junction points c1 and c2 between first and second junction points a and b, and three second branches connected to one another by second middle junction points d1 and d2 between the first and second junction points a and b. The LED circuit includes two middle branches connected between the first and second middle junction points c1 and d1, and c2 and d2 of an identical sequence. Here, LED devices 8, 9, 10, 11, 12, 13, 14, and 15 are disposed on the first and second branches and the middle branches, respectively.
    • 要解决的问题:提供一种LED驱动电路和LED阵列器件,其中可以通过直接采用AC电压来减少使用的LED的数量。 解决方案:本发明的梯形网络LED电路包括通过第一和第二接合点a和b之间的第一中间连接点c1和c2彼此连接的三个第一分支,以及通过第二连接点彼此连接的三个第二分支 第一和第二连接点a和b之间的中间连接点d1和d2。 LED电路包括连接在第一和第二中间连接点c1和d1之间的两个中间分支,以及相同顺序的c2和d2。 这里,LED装置8,9,10,11,12,13,14和15分别设置在第一和第二分支和中间分支上。 版权所有(C)2012,JPO&INPIT
    • 8. 发明专利
    • Manufacturing method of light emitting diode and the light emitting diode manufactured by using the manufacturing method
    • 使用制造方法制造的发光二极管和发光二极管的制造方法
    • JP2012142581A
    • 2012-07-26
    • JP2012000735
    • 2012-01-05
    • Samsung Led Co Ltdサムソン エルイーディー カンパニーリミテッド.
    • LEE DONG JULEE HOON-HOSIM HYUN-UKKIM YONG-SUN
    • H01L33/32H01L21/205
    • H01L33/0075H01L33/007H01L33/32
    • PROBLEM TO BE SOLVED: To provide a manufacturing method which improves the operational capability and the productivity of a process system and also improves crystallinity of a semiconductor layer.SOLUTION: A manufacturing method of a light emitting diode includes: a stage where a first conductive type nitride semiconductor layer 102 and an undoped nitride semiconductor layer 103 are sequentially grown on a substrate 101 in a first reaction chamber; a stage where the substrate on which the first conductive type nitride semiconductor layer and the undoped nitride semiconductor layer are grown is transferred to a second reaction chamber; a stage where an additional first conductive type nitride semiconductor layer is grown on the undoped nitride semiconductor layer in the second reaction chamber; a stage where an active layer 105 is grown on the additional first conductive type nitride semiconductor layer; and a stage where a second conductive type nitride semiconductor layer 106 is grown on the active layer.
    • 要解决的问题:提供一种提高处理系统的操作能力和生产率并且还提高半导体层的结晶度的制造方法。 解决方案:发光二极管的制造方法包括:在第一反应室中在基板101上依次生长第一导电型氮化物半导体层102和未掺杂的氮化物半导体层103的阶段; 将第一导电型氮化物半导体层和未掺杂氮化物半导体层生长的基板转移到第二反应室的阶段; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层的阶段; 在附加的第一导电型氮化物半导体层上生长有源层105的阶段; 以及在有源层上生长第二导电型氮化物半导体层106的阶段。 版权所有(C)2012,JPO&INPIT