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1. 发明专利

JP2010271732A Contact portion of semiconductor device and method of manufacturing the same, and thin-film transistor display panel for display device and method of manufacturing the same 有权
标题翻译：半导体器件的接触部分及其制造方法以及用于显示器件的薄膜晶体管显示面板及其制造方法
公开(公告)号：JP2010271732A
公开(公告)日：2010-12-02
申请号：JP2010161992
申请日：2010-07-16
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LIM SEUNG-TAEK , KO KOSHOKU , HAKU HANKI , KANG BONG-JOO , RHEE YOUNG-JOON , CHOI KWON-YOUNG , KIM WON-JOO
IPC分类号： G02F1/1345 , G02F1/1368 , G02F1/1343 , G02F1/1362 , H01L21/3205 , H01L21/3213 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L23/522 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： G02F1/13458 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/4908
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor display panel, including a contact portion having proper contact characteristics despite low resistivity, and also including a contact portion with superior contact characteristics, and to provide a method of manufacturing them. SOLUTION: The thin-film transistor display panel includes an insulating substrate; a gate line; a gate insulating layer; a semiconductor layer; a data line; a drain electrode separated from the data line; a protective film having a first contact hole covering the semiconductor layer and exposing the drain electrode, a second contact hole exposing a part of the gate line, a third contact hole exposing a part of the data line; a pixel electrode connected to the drain electrode through the first contact hole; a gate contact auxiliary member connected to the gate line through the second contact hole; and the data contact auxiliary member connected to the data line through the third contact hole, wherein the data contact auxiliary member has a recess and projection. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种薄膜晶体管显示面板，其包括具有良好接触特性的接触部分，尽管电阻率低，并且还包括具有优异接触特性的接触部分，并提供其制造方法。薄膜晶体管显示面板包括绝缘基板; 一条门线栅极绝缘层; 半导体层; 数据线与数据线分离的漏电极; 保护膜，其具有覆盖半导体层的第一接触孔和露出漏电极，露出栅极线的一部分的第二接触孔，暴露数据线的一部分的第三接触孔; 通过所述第一接触孔与所述漏电极连接的像素电极; 通过所述第二接触孔连接到所述栅线的栅极接触辅助构件; 以及通过第三接触孔连接到数据线的数据接触辅助构件，其中数据接触辅助构件具有凹部和突起。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2004280111A Liquid crystal display device and thin film transistor display plate used for the same 审中-公开
公开(公告)号：JP2004280111A
公开(公告)日：2004-10-07
申请号：JP2004072430
申请日：2004-03-15
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： LEE CHUNG HYO , LEE DONG-HO , RHEE YOUNG-JOON
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/1362 , G02F2001/136222
摘要： PROBLEM TO BE SOLVED: To provide a liquid crystal display device with a high utilization factor of the light and to improve an opening ratio of the liquid crystal display device. SOLUTION: Thin film transistors are formed on a lower insulating substrate and red, green, blue and transparent color filters are formed thereon. An organic insulating layer is formed on the color filters, and pixel electrodes are formed thereon. A black matrix and a common electrode are formed on an upper insulating substrate facing the lower insulating substrate. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2005148753A Thin-film transistor display panel for display unit 有权
标题翻译：显示单元的薄膜晶体管显示面板
公开(公告)号：JP2005148753A
公开(公告)日：2005-06-09
申请号：JP2004332573
申请日：2004-11-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： PARK MYUNG-JAE , KO KOSHOKU , PARK HYEONG-JUN , RHEE YOUNG-JOON
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/136 , G02F1/1362 , G09F9/30 , H01L29/786
CPC分类号： G02F1/136286 , G02F1/133707 , G02F2001/13625
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor display panel for a display unit capable of minimizing stitch defective or flicker. SOLUTION: A gate line including a gate electrode and a maintenance wire including a maintenance electrode are formed on an insulating substrate. A semiconductor layer and a resistive contact layer of doped amorphous silicon are formed on a gate insulating film covering them. A source electrode which is insulated from the gate line and comes into contact with the resistive contact layer while crossing it is provided on the gate insulating film, and a drain electrode which includes a part arranged on double lines through a bent part and faces the data line and source electrode is formed. A pixel electrode which is connected to the drain electrode through a contact hole is formed on a protection film covering them. At this time, a portion of the data line overlaps with a pixel electrode of an adjacent pixel. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于能够最小化针迹缺陷或闪烁的显示单元的薄膜晶体管显示面板。解决方案：在绝缘基板上形成包括栅电极和维护线的包括维护电极的栅极线。在覆盖它们的栅极绝缘膜上形成掺杂非晶硅的半导体层和电阻接触层。栅极绝缘膜上与栅极绝缘并与电阻接触层接触的源电极设置在栅极绝缘膜上，漏电极包括通过弯曲部布置在双线上并面向数据的部分形成线源电极。通过接触孔连接到漏电极的像素电极形成在覆盖它们的保护膜上。此时，数据线的一部分与相邻像素的像素电极重叠。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004096115A Contact of semiconductor device and its manufacturing method, and as thin film transistor display for display unit and its manufacturing method 审中-公开
公开(公告)号：JP2004096115A
公开(公告)日：2004-03-25
申请号：JP2003309757
申请日：2003-09-02
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： LIM SEUNG-TAEK , KO KOSHOKU , HAKU HANKI , KANG BONG-JOO , RHEE YOUNG-JOON , CHOI KWON-YOUNG , KIM WON-JOO
IPC分类号： G02F1/1345 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/3205 , H01L21/3213 , H01L21/336 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： G02F1/13458 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F2001/136236 , G02F2001/13629 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/4908
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor display, which comprises a contact having good contact property despite its low specific resistance and a contact with excellent contact property, and a manufacturing method of the display. SOLUTION: On a substrate, a gate line, a gate insulating film, an amorphous silicon layer, a doped amorphous silicon layer, a lower film made of chromium, and an upper film made of aluminum or an aluminum alloy are formed. In a light-sensitive film pattern, a first portion located at an area where a data line is formed has a greater thickness than that of a second portion located at a channel between the data line and a drain electrode. The entire light-sensitive film excluding the first and second portions is removed, and the exposed upper film is wet etched, then the lower film, the amorphous silicon layer, and the second portion of the light-sensitive film are removed by dry etching. After removing any film residues on the surface of the upper film by ashing, the upper and lower films and the underlying doped amorphous silicon layer in the channel are removed by etching to separate the data line from the drain electrode. COPYRIGHT: (C)2004,JPO

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