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1. 发明专利

JP2008227504A Semiconductor device and method of forming semiconductor structure 审中-公开
标题翻译：半导体器件及形成半导体结构的方法
公开(公告)号：JP2008227504A
公开(公告)日：2008-09-25
申请号：JP2008063164
申请日：2008-03-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK YOUNG-SOO , KIN EINAN , LIM YOUNG-SAM , KIN KOSHO , KANG PIL KYU
IPC分类号： H01L21/322 , H01L21/8244 , H01L21/8247 , H01L27/11 , H01L27/115
CPC分类号： H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1104 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11551 , H01L2924/00011 , H01L2224/80001
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a gettering region applicable to a three-dimensional structure, such as, a laminated semiconductor package and/or element, and which minimizes contamination. SOLUTION: An embodiment of the semiconductor device includes a semiconductor substrate 100, a first insulating layer 150 formed over the semiconductor substrate 100, and a first semiconductor layer 200 formed over the first insulation layer 150. At least one gettering region 165, 165' is formed in at least one of the first insulating layer 150 and a second semiconductor layer 150'. The gettering region 165, 165' includes a plurality of gettering sites 170, 170', and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，其包括可应用于诸如层叠半导体封装和/或元件的三维结构的吸杂区域，并且使污染最小化。解决方案：半导体器件的实施例包括半导体衬底100，形成在半导体衬底100上的第一绝缘层150以及形成在第一绝缘层150上的第一半导体层200.至少一个吸杂区165， 165'形成在第一绝缘层150和第二半导体层150'中的至少一个中。吸气区域165,165'包括多个吸气部位170,170'，并且至少一个吸气部位包括沉淀物，分散质，与分散质的界面，堆垛层错和位错中的一个。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006270105A Wafer carrier for minimizing contact area with wafer and wafer washing method using it 审中-公开
标题翻译：使用WAFER和WAFER WASHING方法最小化接触区域的散热器
公开(公告)号：JP2006270105A
公开(公告)日：2006-10-05
申请号：JP2006081502
申请日：2006-03-23
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIN KOSHO , CHON SANG-MOON , KIN EINAN , KANG DAE-WON , LIM YOUNG-SAM
IPC分类号： H01L21/673 , H01L21/304
CPC分类号： H01L21/67313 , H01L21/67326
摘要： PROBLEM TO BE SOLVED: To provide a wafer carrier capable of minimizing a contact area with wafer and a wafer washing method using it. SOLUTION: A wafer carrier comprises a plurality of opening mouths 170. The carrier comprises a storing maintenance member 100 for receiving a plurality of wafers, and front end and back end clamping plates 150 and 160 arranged on the front and back ends of the storing maintenance member 100 and opposed to the surface of the sheet of wafer of the plurality of wafers at least. When the storing maintenance member 100 receives the wafer, peripheral portions of the left and light sides of wafer are exposed from the plurality of opening mouths 170. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够最小化与晶片的接触面积的晶片载体和使用其的晶片清洗方法。解决方案：晶片载体包括多个开口170.载体包括用于容纳多个晶片的存储维护构件100，以及布置在前端和后端的前端和后端夹持板150和160 存储维护部件100至少与多个晶片片的表面相对。当存储维护构件100接收晶片时，晶片的左侧和侧面的周边部分从多个开口170露出。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005138277A Apparatus and method for chemico-mechanical polishing using polishing surface having ununiform strength 有权
标题翻译：使用具有分辨率强度的抛光表面进行化学机械抛光的装置和方法
公开(公告)号：JP2005138277A
公开(公告)日：2005-06-02
申请号：JP2004310383
申请日：2004-10-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： YUN HYUN JOO , BOO JAE-PHIL , LIM YOUNG-SAM
IPC分类号： B24B37/20 , B24B37/24 , B24D13/14 , H01L21/304 , B24B37/00
CPC分类号： B24B37/26
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for chemico-mechanical polishing, by which a substantially uniform polished profile is obtained by polishing a wafer such that wear may uniformly occur on the portion of a pad to be brought into contact with the wafer. SOLUTION: The chemico-mechanical polishing apparatus includes a platen, a polishing pad attached to the surface of the platen, and a polishing head formed so as to hold and rotate the wafer during pushing the surface of the wafer rotating with respect to the polishing pad. A first portion of the polishing pad cooperating with the polishing head in the neighborhood of the edge portion of the wafer has a strength furthermore lower than a second portion of the polishing pad in contact with the portion on the surface of the wafer. For example, the polishing pad and/or the platen may have a recessed portion in the neighborhood of a travelling trajectory of the portion of the polishing head which supports the edge portion of the wafer, or may have other cushioning structures. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于化学机械抛光的装置和方法，通过该装置和方法通过抛光晶片获得基本均匀的抛光轮廓，使得磨损均匀地发生在待接触的垫的部分上与晶圆。解决方案：化学机械抛光装置包括压板，附着在压板表面的抛光垫，以及抛光头，其形成为在推动晶片表面期间保持和旋转晶片，所述表面相对于抛光垫。与晶片边缘部分附近的抛光头配合的抛光垫的第一部分的强度进一步低于与晶片表面上的部分接触的抛光垫的第二部分。例如，抛光垫和/或压板可以在支撑晶片的边缘部分的抛光头部分的行进轨迹附近具有凹部，或者可以具有其它缓冲结构。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005012182A Polishing table of chemical mechanical polishing device, method for monitoring chemical mechanical polishing process using the same, method for detecting termination using the same, and its manufacturing method 审中-公开
标题翻译：化学机械抛光装置的抛光表，使用该化学机械抛光装置的化学机械抛光方法的监测方法，使用该方法检测终止的方法及其制造方法
公开(公告)号：JP2005012182A
公开(公告)日：2005-01-13
申请号：JP2004124484
申请日：2004-04-20
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： LIM YOUNG-SAM , KANG KYOUNG-MOON , LEE DONG-JUN , KIM NAM-SOO , MOON SUNG-TAEK , SO JAE-HYUN
IPC分类号： B24B37/013 , B24B37/20 , B24B37/24 , B24D7/12 , C08J5/14 , C08L101/00 , H01L21/304 , B24B37/00 , B24B37/04
CPC分类号： B24B37/205 , B24B37/013
摘要： PROBLEM TO BE SOLVED: To provide a polishing table which detects a in-situ termination without reducing chemical mechanical polishing efficiency, its manufacturing method, and a method for monitoring a chemical mechanical polishing process using the method, and a method for detecting a termination of polishing process. SOLUTION: A polishing pad having a polishing layer 3 and a dummy aperture area 3a thinner than the polishing layer, and a platen having a hole H which is a penetration area in part and a transparent platen aperture 1a which closes it, are prepared. The polishing pad is attached on the platen so that the dummy aperture area 3a of the polishing pad and the platen aperture 1a face each other, and by monitoring the light which passes the dummy aperture area 3a, the termination of polishing is detected. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在不降低化学机械抛光效率的情况下检测原位终止的抛光台，其制造方法和使用该方法监测化学机械抛光工艺的方法，以及用于检测方法抛光过程终止。解决方案：具有抛光层3和比抛光层更薄的虚拟孔径区域3a的抛光垫以及部分具有穿透区域的孔H和将其封闭的透明压板孔1a的压板准备。抛光垫安装在台板上，使得抛光垫的虚拟孔径区域3a和压板孔1a彼此面对，并且通过监视通过虚拟孔径区域3a的光，检测到抛光的终止。版权所有（C）2005，JPO＆NCIPI

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