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1. 发明专利

JP2013175263A Voltage generation part suitable for low external power source voltage 有权
标题翻译：电压发生器适用于低外部电源电压
公开(公告)号：JP2013175263A
公开(公告)日：2013-09-05
申请号：JP2013003386
申请日：2013-01-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE TOSHU
IPC分类号： G11C11/4074
CPC分类号： G11C11/4076 , G05F1/56 , G11C5/145 , G11C5/147 , G11C11/4074 , G11C11/4099 , G11C2207/2272 , H02M3/07
摘要： PROBLEM TO BE SOLVED: To provide a voltage generation part suitable for a low external power source voltage.SOLUTION: A voltage generation part is disclosed that generates a high target voltage level for a low external power source voltage. A reference voltage generation part includes a clamp control unit driven by a first power source voltage applied from outside and receiving a first voltage to generate a clamp voltage, and a level amplification unit driven by a second power source voltage higher than the first power source voltage and receiving the clamp voltage to generate a reference voltage. The clamp voltage is set to have a minimum voltage level to guarantee restoration operation of memory cell data in DRAM.
摘要翻译：要解决的问题：提供适合于低外部电源电压的电压产生部件。解决方案：公开了一种产生用于低外部电源电压的高目标电压电平的电压产生部件。参考电压产生部分包括由外部施加的第一电源电压驱动并接收第一电压以产生钳位电压的钳位控制单元，以及由比第一电源电压高的第二电源电压驱动的电平放大单元并接收钳位电压以产生参考电压。钳位电压被设置为具有最小电压电平以保证DRAM中存储器单元数据的恢复操作。

2. 发明专利

JP2012009124A Variable resistive element, semiconductor device including the variable resistive element and method for operating the semiconductor device 审中-公开
标题翻译：可变电阻元件，包括可变电阻元件的半导体器件和操作半导体器件的方法
公开(公告)号：JP2012009124A
公开(公告)日：2012-01-12
申请号：JP2011014987
申请日：2011-01-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM YONG-BE , LEE CHANG-BUM , LEE TOSHU , KIM CHANG-JUN , LEE MYOUNG-JAE , CHANG MAN , YI SUN-YEOL
IPC分类号： G11C13/00 , H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C13/0097 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element, a semiconductor device including the variable resistive element and a method for operating the semiconductor device.SOLUTION: A method for operating the semiconductor device is disclosed. The method for operating the semiconductor device writes first data by applying at least one reset pulse voltage so as to switch the variable resistive element from a first resistor to a second resistor, and writes second data by applying at least one set pulse voltage so as to switch the variable resistive element from the second resistor to the first resistor. The magnitude of the at least one set pulse voltage is smaller than the magnitude of the at least one reset pulse voltage, and the second resistor is larger than the first resistor.
摘要翻译：要解决的问题：提供可变电阻元件，包括可变电阻元件的半导体器件和用于操作半导体器件的方法。
解决方案：公开了一种用于操作半导体器件的方法。用于操作半导体器件的方法通过施加至少一个复位脉冲电压来写入第一数据，以将可变电阻元件从第一电阻器切换到第二电阻器，并且通过施加至少一个设置的脉冲电压来写入第二数据，以便将可变电阻元件从第二电阻器切换到第一电阻器。所述至少一个设定脉冲电压的大小小于所述至少一个复位脉冲电压的幅度，并且所述第二电阻器大于所述第一电阻器。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2013045496A Method of operating semiconductor device including variable resistance element 有权
标题翻译：包括可变电阻元件的半导体器件的操作方法
公开(公告)号：JP2013045496A
公开(公告)日：2013-03-04
申请号：JP2012183075
申请日：2012-08-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： CHANG MAN , KIM YOUNG-BAE , KIM CHANG-JUN , LEE MYOUNG-JAE , PARK SEONG-JUN , HUR JI-HYUN , LEE TOSHU , LEE CHANG-BUM , YI SUN-YEOL
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2013/0073 , G11C2013/0076
摘要： PROBLEM TO BE SOLVED: To provide a method of operating a semiconductor device having a variable resistance element.SOLUTION: A method of operating a semiconductor device having a variable resistance element includes the steps of: applying a first voltage to the variable resistance element to change a resistance value of the variable resistance element from a first resistance value to a second resistance value; sensing a first current flowing through the variable resistance element to which the first voltage is applied; determining a second voltage used for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value, on the basis of a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance element.
摘要翻译：解决的问题：提供一种操作具有可变电阻元件的半导体器件的方法。解决方案：一种操作具有可变电阻元件的半导体器件的方法包括以下步骤：向可变电阻元件施加第一电压以将可变电阻元件的电阻值从第一电阻值改变为第二电阻值; 感测流过施加有第一电压的可变电阻元件的第一电流; 基于感测到的第一电流的偏差，确定用于将可变电阻元件的电阻值从第二电阻值改变为第一电阻值的第二电压; 以及将所确定的第二电压施加到所述可变电阻元件。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011135071A Memory element, and method of operating the same 审中-公开
标题翻译：记忆元件及其操作方法
公开(公告)号：JP2011135071A
公开(公告)日：2011-07-07
申请号：JP2010276764
申请日：2010-12-13
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE MYOUNG-JAE , LEE TOSHU , LEE CHANG-BUM , LEE SEUNG-RYUL
IPC分类号： H01L27/105 , G11C13/00 , H01L29/47 , H01L29/861 , H01L29/872 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2013/0073 , G11C2213/31 , G11C2213/32 , G11C2213/72 , G11C2213/73 , G11C2213/74 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： PROBLEM TO BE SOLVED: To provide a memory element having bipolar characteristics, and to provide a method of operating the same. SOLUTION: The memory element includes a memory cell MC1. The memory cell includes a bipolar memory element and bidirectional switching elements. The bidirectional switching elements S1, S2 are connected to both ends of the bipolar memory element. The bidirectional switching elements include a first switching element and a second switching element. The first switching element is connected to one end of the bipolar memory element and may have a first switching direction. The second switching element is connected to the other end of the bipolar memory element and may have a second switching direction. The second switching direction can be opposite to the first switching direction. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有双极特性的存储元件，并提供其操作方法。存储元件包括存储单元MC1。存储单元包括双极存储元件和双向开关元件。双向开关元件S1，S2连接到双极存储元件的两端。双向开关元件包括第一开关元件和第二开关元件。第一开关元件连接到双极存储元件的一端，并且可以具有第一开关方向。第二开关元件连接到双极存储元件的另一端，并且可以具有第二开关方向。第二切换方向可以与第一切换方向相反。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2006134567A Voltage generating circuit and semiconductor memory device having the same 审中-公开
标题翻译：电压发生电路和具有该电路的半导体存储器件
公开(公告)号：JP2006134567A
公开(公告)日：2006-05-25
申请号：JP2005322719
申请日：2005-11-07
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE TOSHU
IPC分类号： G11C11/407 , G11C11/401
CPC分类号： G11C11/4074 , G11C5/14 , G11C11/4076
摘要： PROBLEM TO BE SOLVED: To provide a voltage generating circuit capable of detecting an operation requiring voltage of the prescribed level performed continuously, and compensating the voltage.
SOLUTION: The present invention provides the voltage generating circuit and the semiconductor memory device having the circuit. The voltage generating circuit is provided with an internal voltage generating portion for generating an internal voltage in response to a signal inputted from an external portion, a sensing portion for outputting a sensing signal when the signal inputted from the external portion is inputted continuously within a predetermined time period, a control signal generating portion for outputting a control signal in response to the sensing signal, and a compensating portion for compensating the internal voltage in response to the control signal.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够检测需要连续执行的规定电平的电压并进行补偿的电压产生电路。解决方案：本发明提供具有电路的电压产生电路和半导体存储器件。电压产生电路具有内部电压产生部分，用于响应于从外部输入的信号产生内部电压;当感测部分输出感测信号，当从外部部分输入的信号被连续地输入到预定的时间段，用于响应于感测信号输出控制信号的控制信号产生部分，以及用于响应于控制信号补偿内部电压的补偿部分。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2013046066A Nonvolatile memory element and memory device including the same 审中-公开
标题翻译：非易失性存储器元件和包括其的存储器件
公开(公告)号：JP2013046066A
公开(公告)日：2013-03-04
申请号：JP2012179246
申请日：2012-08-13
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YI SUN-YEOL , KIM YOUNG-BAE , KIM CHANG-JUN , LEE MYOUNG-JAE , HUR JI-HYUN , LEE TOSHU , CHANG MAN , LEE CHANG-BUM , KIM KYUNG-MIN
IPC分类号： H01L27/105 , G11C13/00 , H01L21/329 , H01L27/10 , H01L29/861 , H01L29/866 , H01L29/868 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/51 , G11C2213/55 , G11C2213/71 , G11C2213/72
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory element and a memory device including the same.SOLUTION: The nonvolatile memory element includes a memory layer between both electrodes, and the memory layer has a multi-layer structure. The memory layer includes a base layer and an ion species exchange layer, and has resistance change characteristics caused by movement of ion species therebetween. The ion species exchange layer has a multi-layer structure including at least two layers. The nonvolatile memory element has multi-bit memory characteristics by an ion species exchange layer of the multi-layer structure. The base layer is an oxide supply layer, and the ion species exchange layer is an oxygen exchange layer.
摘要翻译：要解决的问题：提供一种非易失性存储元件和包括该非易失性存储元件的存储器件。解决方案：非易失性存储元件包括两个电极之间的存储层，存储层具有多层结构。存储层包括基层和离子物种交换层，并且具有由它们之间的离子物质的移动引起的电阻变化特性。离子物种交换层具有包括至少两层的多层结构。非易失性存储元件通过多层结构的离子物质交换层具有多位存储特性。基层是氧化物供给层，离子物种交换层是氧交换层。版权所有（C）2013，JPO＆INPIT

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