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1. 发明专利

JP2013046066A Nonvolatile memory element and memory device including the same 审中-公开
标题翻译：非易失性存储器元件和包括其的存储器件
公开(公告)号：JP2013046066A
公开(公告)日：2013-03-04
申请号：JP2012179246
申请日：2012-08-13
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YI SUN-YEOL , KIM YOUNG-BAE , KIM CHANG-JUN , LEE MYOUNG-JAE , HUR JI-HYUN , LEE TOSHU , CHANG MAN , LEE CHANG-BUM , KIM KYUNG-MIN
IPC分类号： H01L27/105 , G11C13/00 , H01L21/329 , H01L27/10 , H01L29/861 , H01L29/866 , H01L29/868 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/12 , G11C2213/15 , G11C2213/32 , G11C2213/51 , G11C2213/55 , G11C2213/71 , G11C2213/72
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory element and a memory device including the same.SOLUTION: The nonvolatile memory element includes a memory layer between both electrodes, and the memory layer has a multi-layer structure. The memory layer includes a base layer and an ion species exchange layer, and has resistance change characteristics caused by movement of ion species therebetween. The ion species exchange layer has a multi-layer structure including at least two layers. The nonvolatile memory element has multi-bit memory characteristics by an ion species exchange layer of the multi-layer structure. The base layer is an oxide supply layer, and the ion species exchange layer is an oxygen exchange layer.
摘要翻译：要解决的问题：提供一种非易失性存储元件和包括该非易失性存储元件的存储器件。解决方案：非易失性存储元件包括两个电极之间的存储层，存储层具有多层结构。存储层包括基层和离子物种交换层，并且具有由它们之间的离子物质的移动引起的电阻变化特性。离子物种交换层具有包括至少两层的多层结构。非易失性存储元件通过多层结构的离子物质交换层具有多位存储特性。基层是氧化物供给层，离子物种交换层是氧交换层。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013045496A Method of operating semiconductor device including variable resistance element 有权
标题翻译：包括可变电阻元件的半导体器件的操作方法
公开(公告)号：JP2013045496A
公开(公告)日：2013-03-04
申请号：JP2012183075
申请日：2012-08-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： CHANG MAN , KIM YOUNG-BAE , KIM CHANG-JUN , LEE MYOUNG-JAE , PARK SEONG-JUN , HUR JI-HYUN , LEE TOSHU , LEE CHANG-BUM , YI SUN-YEOL
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C2013/0073 , G11C2013/0076
摘要： PROBLEM TO BE SOLVED: To provide a method of operating a semiconductor device having a variable resistance element.SOLUTION: A method of operating a semiconductor device having a variable resistance element includes the steps of: applying a first voltage to the variable resistance element to change a resistance value of the variable resistance element from a first resistance value to a second resistance value; sensing a first current flowing through the variable resistance element to which the first voltage is applied; determining a second voltage used for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value, on the basis of a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance element.
摘要翻译：解决的问题：提供一种操作具有可变电阻元件的半导体器件的方法。解决方案：一种操作具有可变电阻元件的半导体器件的方法包括以下步骤：向可变电阻元件施加第一电压以将可变电阻元件的电阻值从第一电阻值改变为第二电阻值; 感测流过施加有第一电压的可变电阻元件的第一电流; 基于感测到的第一电流的偏差，确定用于将可变电阻元件的电阻值从第二电阻值改变为第一电阻值的第二电压; 以及将所确定的第二电压施加到所述可变电阻元件。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012185159A Large-scale x-ray detector 有权
标题翻译：大规模X射线探测器
公开(公告)号：JP2012185159A
公开(公告)日：2012-09-27
申请号：JP2012043106
申请日：2012-02-29
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SANG-WOOK , KIM CHANG-JUN , PARK JAECHUL , KIM SUN-IL
IPC分类号： G01T1/24 , A61B6/00 , H01L27/14 , H01L27/144 , H01L27/146 , H01L31/09
CPC分类号： H01L27/14676 , H01L27/14618 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a large-scale X-ray detector.SOLUTION: A large-scale X-ray detector includes: a plurality of chips arranged on a printed circuit board; a plurality of pixel electrodes arranged above the plurality of chips corresponding to the plurality of chips; a redistribution layer electrically connecting the plurality of pixel electrodes and a plurality of pixel pads; a plurality of first electrode pads formed on a surface opposite to a surface of the plurality of chips where a plurality of pin pads are formed, on the redistribution layer; and a wire electrically connecting the plurality of first electrode pads and a plurality of second electrode pin pads, in which the wire is arranged in a gap between the chips.
摘要翻译：要解决的问题：提供大规模X射线检测器。解决方案：大规模X射线检测器包括：布置在印刷电路板上的多个芯片; 布置在与所述多个芯片对应的多个芯片上方的多个像素电极; 电连接所述多个像素电极和多个像素焊盘的再分配层; 多个第一电极焊盘，形成在与形成有多个焊盘的多个芯片的表面相反的表面上; 以及将多个第一电极焊盘和多个第二电极引脚焊盘电连接的导线，其中导线布置在芯片之间的间隙中。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2013061931A Light-sensing apparatus, method of driving light-sensing apparatus, and optical touch screen apparatus including light-sensing apparatus 有权
标题翻译：感光装置，驱动感光装置的方法，以及包括感光装置的光触控屏幕装置
公开(公告)号：JP2013061931A
公开(公告)日：2013-04-04
申请号：JP2012170916
申请日：2012-08-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： AHN SEUNG-EON , SONG I-HUN , JEON SANG-HUN , KIM YEONG , JEON YONG WOO , KIM CHANG-JUN
IPC分类号： G06F3/041 , G06F3/042
CPC分类号： H01L27/14609 , G06F3/0412 , G06F3/0421 , G06F2203/04103
摘要： PROBLEM TO BE SOLVED: To provide a light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is composed of an oxide semiconductor transistor that can sense light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus.SOLUTION: A light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in a plurality of rows and columns. Each of the light-sensing pixels includes a light sensor transistor and a switch transistor connected in series. Each row in the light-sensing pixel array includes a gate line connected to a gate of the switch transistor and a reset line connected to a gate of the light sensor transistor, and the reset line is connected to the gate line through a phase inverter. Thus, when a gate voltage is applied to the gate line, a reset signal with an inverted phase to the gate voltage is applied to the reset line.
摘要翻译：要解决的问题：提供一种感光装置，其中光感测像素中的光传感器晶体管由可感测光的氧化物半导体晶体管构成，驱动光感测装置的方法和包括光感测装置的光学触摸屏装置。解决方案：光感测装置包括具有布置成多行和多列的多个感光像素的感光像素阵列。每个感光像素包括串联连接的光传感器晶体管和开关晶体管。感光像素阵列中的每行包括连接到开关晶体管的栅极的栅极线和连接到光传感器晶体管的栅极的复位线，并且复位线通过相位逆变器连接到栅极线。因此，当栅极电压施加到栅极线时，将具有与栅极电压相反的相位的复位信号施加到复位线。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012231138A Optical sensing device and driving method for the same 有权
标题翻译：光学传感装置及其驱动方法
公开(公告)号：JP2012231138A
公开(公告)日：2012-11-22
申请号：JP2012091717
申请日：2012-04-13
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON SANG-HUN , SONG I-HUN , AHN SEUNG-EON , KIM CHANG-JUN , KIM YEONG
IPC分类号： H01L27/146 , H01L21/336 , H01L29/786 , H01L31/0264 , H04N5/374
CPC分类号： H01L27/14632 , H01L27/1446 , H01L27/14603 , H01L27/14623
摘要： PROBLEM TO BE SOLVED: To provide an optical sensing device and a driving method for the same.SOLUTION: In an optical sensing device, an optical sensor transistor and a switching transistor in an optical sensing pixel are each formed using an oxide semiconductor transistor with the same structure. A driving method for improving the operation reliability of the optical sensing device is also provided. In the optical sensing device, the optical sensor transistor and the switching transistor in the optical sensing pixel are formed adjacent to each other with the same structure on one substrate, and a light-blocking film is further provided for a light incidence surface of the switching transistor for preventing the light incidence into the switching transistor. According to the driving method for the optical sensing device, a negative (-) bias voltage is applied to the light-blocking film for preventing the shift of the threshold voltage of the switching transistor over time.
摘要翻译：要解决的问题：提供一种光学传感装置及其驱动方法。解决方案：在光学感测装置中，光学感测像素中的光学传感器晶体管和开关晶体管均使用具有相同结构的氧化物半导体晶体管形成。还提供了用于提高光学传感器件的操作可靠性的驱动方法。在光感测装置中，光感测像素中的光传感晶体管和开关晶体管在一个基板上以相同的结构彼此相邻地形成，并且还为切换的光入射表面设置了遮光膜晶体管，用于防止光入射到开关晶体管中。根据光学传感器件的驱动方法，对遮光膜施加负（ - ）偏压，以防止开关晶体管的阈值电压随时间偏移。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013047936A Optical touch screen apparatus capable of remote sensing and touch sensing 有权
标题翻译：适用于远程感应和触摸感应的光学触屏设备
公开(公告)号：JP2013047936A
公开(公告)日：2013-03-07
申请号：JP2012155288
申请日：2012-07-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON SANG-HUN , SONG I-HUN , AHN SEUNG-EON , KIM YEONG , KIM CHANG-JUN , JEON YONG WOO
IPC分类号： G06F3/042 , G06F3/041
CPC分类号： G06F3/042 , G06F3/0386 , H01L27/14679
摘要： PROBLEM TO BE SOLVED: To provide an optical touch screen apparatuses capable of performing both functions of remote sensing and touch sensing by using a light sensor transistor formed of an oxide semiconductor transistor.SOLUTION: The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected upon a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected to each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected to each other in series.
摘要翻译：要解决的问题：提供一种能够通过使用由氧化物半导体晶体管形成的光传感器晶体管来执行遥感和触摸感测功能的光学触摸屏设备。解决方案：光学触摸屏设备包括布置在多行和多列中的多个感测像素的像素阵列。每个感测像素包括用于感测由外部光源照射的光的感光像素和用于感测在屏幕触摸时反射的显示光的触摸感测像素。感光像素包括串联连接的第一光传感器晶体管和第一开关晶体管，并且触摸感测像素包括彼此串联连接的第二光传感器晶体管和第二开关晶体管。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013033923A Semiconductor devices including variable resistance material and methods of manufacturing the same 审中-公开
标题翻译：包含可变电阻材料的半导体器件及其制造方法
公开(公告)号：JP2013033923A
公开(公告)日：2013-02-14
申请号：JP2012099588
申请日：2012-04-25
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEON SANG-HUN , YOO IN-KYEONG , KIM CHANG-JUN , KIM YOUNG-BAE
IPC分类号： H01L27/105 , H01L21/336 , H01L21/8242 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L45/00 , H01L49/00
CPC分类号： H01L29/66621 , H01L29/66545 , H01L29/66969 , H01L29/685 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including a variable resistance material and a method of manufacturing the same.SOLUTION: The present invention relates to a semiconductor device including as a channel layer a variable resistance material whose resistance varies according to an applied voltage, a method of manufacturing the same, and a non-volatile memory device including the semiconductor device. The semiconductor device comprises: a channel layer disposed over an insulating substrate; a gate electrode disposed in the channel layer; a gate insulating layer surrounding the gate electrode; a source electrode and a drain electrode respectively disposed at opposing sides of the gate electrode on the channel layer; and a variable resistance material layer disposed between the insulating substrate and the gate electrode. By this, the semiconductor device can simultaneously perform a switching function and a non-volatile memory function.
摘要翻译：解决的问题：提供一种包括可变电阻材料的半导体器件及其制造方法。解决方案：本发明涉及一种半导体器件，其包括作为沟道层的电阻根据施加电压而变化的可变电阻材料，其制造方法以及包括该半导体器件的非易失性存储器件。半导体器件包括：设置在绝缘衬底上的沟道层; 设置在沟道层中的栅电极; 围绕所述栅电极的栅极绝缘层; 分别设置在沟道层上的栅电极的相对侧的源电极和漏电极; 以及设置在绝缘基板和栅电极之间的可变电阻材料层。由此，半导体器件可以同时执行开关功能和非易失性存储器功能。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012009124A Variable resistive element, semiconductor device including the variable resistive element and method for operating the semiconductor device 审中-公开
标题翻译：可变电阻元件，包括可变电阻元件的半导体器件和操作半导体器件的方法
公开(公告)号：JP2012009124A
公开(公告)日：2012-01-12
申请号：JP2011014987
申请日：2011-01-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM YONG-BE , LEE CHANG-BUM , LEE TOSHU , KIM CHANG-JUN , LEE MYOUNG-JAE , CHANG MAN , YI SUN-YEOL
IPC分类号： G11C13/00 , H01L27/105 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C13/0097 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32
摘要： PROBLEM TO BE SOLVED: To provide a variable resistive element, a semiconductor device including the variable resistive element and a method for operating the semiconductor device.SOLUTION: A method for operating the semiconductor device is disclosed. The method for operating the semiconductor device writes first data by applying at least one reset pulse voltage so as to switch the variable resistive element from a first resistor to a second resistor, and writes second data by applying at least one set pulse voltage so as to switch the variable resistive element from the second resistor to the first resistor. The magnitude of the at least one set pulse voltage is smaller than the magnitude of the at least one reset pulse voltage, and the second resistor is larger than the first resistor.
摘要翻译：要解决的问题：提供可变电阻元件，包括可变电阻元件的半导体器件和用于操作半导体器件的方法。
解决方案：公开了一种用于操作半导体器件的方法。用于操作半导体器件的方法通过施加至少一个复位脉冲电压来写入第一数据，以将可变电阻元件从第一电阻器切换到第二电阻器，并且通过施加至少一个设置的脉冲电压来写入第二数据，以便将可变电阻元件从第二电阻器切换到第一电阻器。所述至少一个设定脉冲电压的大小小于所述至少一个复位脉冲电压的幅度，并且所述第二电阻器大于所述第一电阻器。版权所有（C）2012，JPO＆INPIT

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