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1. 发明专利

JP2014089792A Nonvolatile memory device using resistor, and method of driving the same 有权
标题翻译：使用电阻器的非易失性存储器件及其驱动方法
公开(公告)号：JP2014089792A
公开(公告)日：2014-05-15
申请号：JP2013217142
申请日：2013-10-18
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SEUNG-YEON , LEE YEONG-TAEK
IPC分类号： G11C13/00
CPC分类号： G11C13/004 , G11C11/16 , G11C11/1673 , G11C11/1693 , G11C11/5607 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/0061 , G11C2213/71 , G11C2213/72
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory device using a resistor, and a method of driving the same.SOLUTION: A nonvolatile semiconductor device comprises: a resistive memory cell; a first sense node; a first clamp section that is connected between the resistive memory cell and the first sense node and supplies a first clamp bias, which is changed with time, to the resistive memory cell; a first compensation section that provides a compensation current to the first sense node; and a first sense amplifier that is connected to the first sense node and senses variations of the level of the first sense node. As a response to first data that is stored in the resistive memory cell, an output value of the first sense amplifier transitions to another state after the first hour following the start of the first clamp bias; and as a response to second data that is stored in the resistive memory, the output value of the first sense amplifier transitions to the other state after the second hours following the start of the first clamp bias.
摘要翻译：要解决的问题：提供一种使用电阻器的非易失性存储器件及其驱动方法。解决方案：非易失性半导体器件包括：电阻性存储单元; 第一感知节点; 第一钳位部分，其连接在所述电阻存储器单元和所述第一感测节点之间，并将随时间改变的第一钳位偏压提供给所述电阻存储器单元; 向第一感测节点提供补偿电流的第一补偿部分; 以及第一感测放大器，其连接到第一感测节点并感测第一感测节点的电平的变化。作为对存储在电阻性存储单元中的第一数据的响应，第一读出放大器的输出值在第一钳位偏置开始之后的第一小时之后转变到另一状态; 并且作为对存储在电阻性存储器中的第二数据的响应，第一读出放大器的输出值在第一钳位偏置开始之后的第二小时之后转变到另一状态。

2. 发明专利

JP2010020893A Method of driving magnetic memory element 审中-公开
标题翻译：驱动磁记忆元件的方法
公开(公告)号：JP2010020893A
公开(公告)日：2010-01-28
申请号：JP2009163055
申请日：2009-07-09
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM KWANG-SEOK , SEO SUN-AE , KIM KEE-WON , HWANG IN-JUN , SHIN HYUNG-SOON , LEE SEUNG-YEON , LEE SEUNG-JUN
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16 , G11C11/1659 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a method of driving a magnetic memory element, in which symmetrical current driving is possible when recording or erasing information.
SOLUTION: There is provided a driving method of the magnetic memory element, in which current variation depending on the direction of the current is reduced by changing a gate voltage of a transistor when applying the current in order to record data to a magneto-resistance structure. By this method, the magnetic memory element is subjected to the symmetrical current driving, and therefore, a stable circuit design is made possible.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种驱动磁存储元件的方法，其中当记录或擦除信息时可以进行对称电流驱动。解决方案：提供了一种磁存储元件的驱动方法，其中当施加电流时，通过改变晶体管的栅极电压来减小依赖于电流的方向的电流变化，以便将数据记录到磁电阻结构。通过这种方法，对磁存储元件进行对称电流驱动，因此可以实现稳定的电路设计。版权所有（C）2010，JPO＆INPIT

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