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1. 发明专利

JP2010010683A Information storage device and method of operating the same 审中-公开
标题翻译：信息存储装置及其操作方法
公开(公告)号：JP2010010683A
公开(公告)日：2010-01-14
申请号：JP2009150221
申请日：2009-06-24
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , BAE JI-YOUNG
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841
摘要： PROBLEM TO BE SOLVED: To provide an information storage device which is easy to record information, and to provide a method of operating the same.
SOLUTION: The information storage device includes: a magnetic layer having a plurality of magnetic domain regions and magnetic domain walls each interposed between the adjacent magnetic domains; a first unit which is disposed on a first region, which is one of the plurality of magnetic domain regions, and is for recording information to the first region; and a second unit which is connected to the first unit and is for inducing a magnetic field to record information to the first region.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种易于记录信息的信息存储装置，并提供一种操作该信息的方法。解决方案：信息存储装置包括：具有多个磁畴区域和磁畴壁的磁性层，每个磁畴区域插入相邻的磁畴之间; 第一单元，其设置在作为所述多个磁畴区域中的一个的第一区域上，并用于将信息记录到所述第一区域; 以及第二单元，其连接到第一单元并且用于感应磁场以将信息记录到第一区域。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010161362A Magnetic structure, method of forming the magnetic structure, information recording device including the magnetic structure, and method of manufacturing the same and method of operating the same 审中-公开
标题翻译：磁性结构，形成磁结构的方法，包括磁性结构的信息记录装置及其制造方法及其操作方法
公开(公告)号：JP2010161362A
公开(公告)日：2010-07-22
申请号：JP2009291225
申请日：2009-12-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , BAE JI-YOUNG
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/12
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1673 , G11C11/1675 , Y10T29/49069
摘要： PROBLEM TO BE SOLVED: To provide a magnetic structure, a method of forming the magnetic structure, an information recording device including the magnetic structure, and a method of manufacturing the same and a method of operating the same. SOLUTION: The information recording magnetic structure has: two magnetic domains which include a first part extending in a first direction in parallel with a substrate and second parts extending from both ends of the first part in a second direction perpendicular to the first direction, wherein the two magnetic domains are magnetized in mutually opposite directions; and a magnetic wall interposed between them. The information recording magnetic structure has a U-shaped or inverted-U-shaped form. The magnetic wall is disposed in the first part. The information recording magnetic structure has vertical magnetic anisotropy. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁性结构，形成磁性结构的方法，包括磁性结构的信息记录装置及其制造方法及其操作方法。信息记录磁性结构具有：两个磁畴，其包括与基板平行地沿第一方向延伸的第一部分和从第一部分的两端沿与第一方向垂直的第二方向延伸的第二部分，其中两个磁畴在相互相反的方向被磁化; 和夹在它们之间的磁壁。信息记录磁结构具有U形或倒U形形状。磁壁设置在第一部分中。信息记录磁结构具有垂直磁各向异性。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010141340A Magnetic track, information storage device including magnetic track, and method of operating information storage device 审中-公开
标题翻译：磁路，包括磁道的信息存储装置，以及操作信息存储装置的方法
公开(公告)号：JP2010141340A
公开(公告)日：2010-06-24
申请号：JP2009283152
申请日：2009-12-14
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SHIN JAI-KWANG , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , BAE JI-YOUNG
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a magnetic track, an information storage device including the magnetic track, and a method of operating the information storage device. SOLUTION: The magnetic track includes first and second magnetic domain regions which have different lengths and may have different magnetic domain wall movement speeds. Longer one of the first and the second magnetic domain regions may serve as an information read/write region. The magnetic domain wall movement speed in the first magnetic domain region is higher than that in the second magnetic domain region. A length l1 of the first magnetic domain region, a length l2 of the second magnetic domain region, a magnetic domain wall movement speed V1 in the first magnetic domain region, and a magnetic domain wall movement speed V2 in the second magnetic domain region satisfy V1=(l1/l2)×V2. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供磁轨，包括磁道的信息存储装置以及操作信息存储装置的方法。解决方案：磁道包括具有不同长度并且可具有不同磁畴壁运动速度的第一和第二磁畴区域。第一和第二磁畴区域中较长的一个可以用作信息读/写区域。第一磁畴区域中的磁畴壁移动速度高于第二磁畴区域中的磁畴壁移动速度。第一磁畴区域的长度l1，第二磁畴区域的长度l2，第一磁畴区域中的磁畴壁移动速度V1和第二磁畴区域中的磁畴壁移动速度V2满足V1 =（L1 / L2）×V2。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010135790A Information storage device using magnetic domain wall movement, and method of operating the same 有权
标题翻译：使用磁畴移动的信息存储装置及其操作方法
公开(公告)号：JP2010135790A
公开(公告)日：2010-06-17
申请号：JP2009272793
申请日：2009-11-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PI UNG-HWAN , PARK YOUNG-SOO , SEO SUN-AE , CHO YOUNG-JIN , LEE SUNG-CHUL , BAE JI-YOUNG
IPC分类号： H01L21/8246 , G11B5/02 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide an information storage device using magnetic domain wall movement, and to provide a method of operating the same.
SOLUTION: The information storage device includes a magnetic track 100 having many magnetic domains D and magnetic domain walls DW interposed between the magnetic domains, a magnetic domain wall moving means 150 coupled to the magnetic track, and an operation unit 200 of the size large enough to cover a plurality of magnetic domains corresponding to one bit. The magnetic domain wall moving means 150 can move the magnetic domains in the magnetic domain area D and the magnetic domain walls in the magnetic domain wall area DW in a predetermined direction by the current applied to the magnetic track 100.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用磁畴壁移动的信息存储装置，并提供其操作方法。解决方案：信息存储装置包括具有许多磁畴D和介于磁畴之间的磁畴壁DW的磁道100，耦合到磁道的磁畴壁移动装置150和尺寸足够大以覆盖对应于一位的多个磁畴。磁畴壁移动装置150可以通过施加到磁轨100的电流沿预定方向移动磁畴区域D中的磁畴和磁畴壁区域DW中的磁畴壁。版权所有： C）2010，JPO＆INPIT

5. 发明专利

JP2011086932A Magneto-resistive device, information storage device including the same, and method of operating information storage device 有权
标题翻译：磁电装置，包括其的信息存储装置和操作信息存储装置的方法
公开(公告)号：JP2011086932A
公开(公告)日：2011-04-28
申请号：JP2010218772
申请日：2010-09-29
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： BAE JI-YOUNG , LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , HEO JIN SEONG
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistive device, an information storage device including the same, and a method of operating the information storage device.
SOLUTION: The magneto-resistive device includes a free layer having an easily magnetizable axis that is non-parallel to the magnetization direction of a pinned layer. The easily magnetizable axis of the free layer is perpendicular to the magnetization direction of the pinned layer. Alternatively, the easily magnetizable axis of the free layer and the magnetization direction of the pinned layer may form an acute angle or an obtuse angle. Such a magneto-resistive device is applicable to an information device that uses the movement of a magnetic domain wall.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种磁阻装置，包括该磁阻装置的信息存储装置以及操作信息存储装置的方法。解决方案：磁阻装置包括具有易磁化轴线的自由层，其与被钉扎层的磁化方向不平行。自由层的易磁化轴垂直于被钉扎层的磁化方向。或者，自由层的易磁化轴和被钉扎层的磁化方向可以形成锐角或钝角。这种磁阻装置适用于使用磁畴壁移动的信息装置。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011044693A Track provided with magnetic layer and magnetic element provided with the track 有权
标题翻译：轨道提供有磁铁层和磁铁元素提供跟踪
公开(公告)号：JP2011044693A
公开(公告)日：2011-03-03
申请号：JP2010154693
申请日：2010-07-07
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , HEO JIN SEONG , BAE JI-YOUNG
IPC分类号： H01L27/105 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L43/08
CPC分类号： G11B5/72 , G11B5/7325 , G11C11/14
摘要： PROBLEM TO BE SOLVED: To provide a track provided with a magnetic layer and a magnetic element including the track. SOLUTION: A magnetic element includes a track having a plurality of magnetic domains and a domain wall between adjacent magnetic domains; a domain wall motion means connected to the track; and a read/write means for reproducing/recording information with respect to the track. The track includes a magnetic layer having the magnetic domains and the domain walls; a first non-magnetic layer formed on a first surface of the magnetic layer; and a second non-magnetic layer formed of a material different from that of the first non-magnetic layer on a second surface of the magnetic layer, and including at least a metal having an atomic number greater than or equal to 14 and magnesium. According to such a structure, the magnetic layer has high non-adiabatic coefficient (β). The magnetic element is, for example, used as an information storage element (memory). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供设置有磁性层的轨道和包括轨道的磁性元件。解决方案：磁性元件包括具有多个磁畴和相邻磁畴之间的畴壁的轨道; 连接到轨道的畴壁运动装置; 以及用于再现/记录关于轨道的信息的读/写装置。轨道包括具有磁畴和畴壁的磁性层; 形成在所述磁性层的第一表面上的第一非磁性层; 以及在所述磁性层的第二表面上由不同于所述第一非磁性层的材料形成的第二非磁性层，并且至少包括原子序数大于或等于14的金属和镁。根据这种结构，磁性层具有高的非绝热系数（β）。磁性元件例如用作信息存储元件（存储器）。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010153022A Information storage device and method of operating the same 有权
标题翻译：信息存储装置及其操作方法
公开(公告)号：JP2010153022A
公开(公告)日：2010-07-08
申请号：JP2009291226
申请日：2009-12-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , BAE JI-YOUNG , PI UNG-HWAN , SHIN HYUNG-SOON , LEE SEUNG-JUN
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/1657 , G11B2005/0002 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide an information storage device in which movement of a magnetic domain and a magnetic domain wall is utilized, and a method of operating the same. SOLUTION: The information storage device and the method of operating the same are disclosed. The information storage device can include a memory region including a magnetic track and a write/read unit, and a control circuit part connected to the memory region. Further the device is provided with a first switching element and a second switching element connected respectively to both ends of the magnetic track, and a third switching element connected to the write/read unit. The first switching element, the second switching element, and the third switching element are controlled by the control circuit part, an operation current is supplied to at least one of the magnetic track and the write/read unit. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种使用磁畴和磁畴壁的移动的信息存储装置及其操作方法。解决方案：公开了信息存储装置及其操作方法。信息存储装置可以包括包括磁道和写入/读取单元的存储区域，以及连接到存储器区域的控制电路部件。此外，该装置设置有分别连接到磁道的两端的第一开关元件和第二开关元件，以及连接到写入/读取单元的第三开关元件。第一开关元件，第二开关元件和第三开关元件由控制电路部分控制，操作电流被提供给磁道和写入/读取单元中的至少一个。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2011082499A Oscillator and method of operating the same 有权
标题翻译：振荡器及其操作方法
公开(公告)号：JP2011082499A
公开(公告)日：2011-04-21
申请号：JP2010183032
申请日：2010-08-18
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , KIM KWANG-SEOK , BAE JI-YOUNG
IPC分类号： H01L29/82 , H01L43/08 , H03B15/00
CPC分类号： H03B15/006
摘要： PROBLEM TO BE SOLVED: To provide an oscillator with high output power, and to provide its operating method. SOLUTION: The oscillator can include a plurality of free layers 10, 20 and a non-magnetic layer 15 in between them. The plurality of free layers can possess perpendicular or horizontal magnetic anisotropy, and a signal in a predetermined frequency band can be oscillated by the mode that a magnetizing direction in a plurality of free layers can be switched with a time interval. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高输出功率的振荡器，并提供其操作方法。解决方案：振荡器可以在它们之间包括多个自由层10,20和非磁性层15。多个自由层可以具有垂直或水平的磁各向异性，并且可以通过时间间隔切换多个自由层中的磁化方向的模式来振荡预定频带中的信号。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011029616A Oscillator utilizing magnetic domain wall, and method of operating the same 有权
标题翻译：使用磁畴的振荡器及其操作方法
公开(公告)号：JP2011029616A
公开(公告)日：2011-02-10
申请号：JP2010141812
申请日：2010-06-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , MATHIAS KLAUI , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , BAE JI-YOUNG , HEO JIN SEONG
IPC分类号： H01L43/08 , H01L29/82 , H03B15/00
CPC分类号： H03B15/006 , Y10T428/1121
摘要： PROBLEM TO BE SOLVED: To provide an oscillator utilizing a magnetic domain wall, and to provide a method of operating the same. SOLUTION: The oscillator is provided for generating signals by utilizing precession movement of magnetic moment of the magnetic domain wall. This oscillator can include a free layer having the magnetic domain wall and a fixed layer provided corresponding to this magnetic domain wall. Moreover, a non-magnetic isolating layer is provided between the free layer and the fixed layer. The free layer has vertical magnetic anisotropy, the fixed layer has horizontal magnetic anisotropy, and the isolating layer is formed as an insulating layer or a conductive layer. COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010218678A Information storage device and method of operating the same 有权
标题翻译：信息存储装置及其操作方法
公开(公告)号：JP2010218678A
公开(公告)日：2010-09-30
申请号：JP2010051552
申请日：2010-03-09
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SUNG-CHUL , SHIN HYUNG-SOON , LEE SEUNG-JUN , SEO SUN-AE , CHO YOUNG-JIN , PI UNG-HWAN , BAE JI-YOUNG , HEO JIN SEONG
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11B5/584 , G11B5/581 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide an information storage device utilizing movements of a magnetic domain and a magnetic domain wall, and to provide the method of operating the same. SOLUTION: This technology relates to the information storage device and the method of operating the same. The information storage device includes: a magnetic structure having a buffer track and a plurality of storage tracks connected thereto; a write/read unit disposed on the magnetic structure; and a plurality of switching elements respectively connected to the buffer track, the plurality of storage tracks and the write/read unit. The switching elements connected to the buffer track and the plurality of storage tracks can be connected to a same signal line. The device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供利用磁畴和磁畴壁的移动的信息存储装置，并提供其操作方法。
解决方案：该技术涉及信息存储设备及其操作方法。信息存储装置包括：具有缓冲轨道和连接到其上的多个存储轨道的磁结构; 设置在磁性结构上的写入/读取单元; 以及分别连接到缓冲磁道，多个存储轨道和写入/读取单元的多个开关元件。连接到缓冲磁道和多个存储磁道的开关元件可以连接到相同的信号线。该装置还包括被配置为向磁结构和写/读单元中的至少一个提供电流的电路。版权所有（C）2010，JPO＆INPIT

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