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2. 发明专利

JP2005150752A Method of forming nickel silicide film and method of manufacturing semiconductor device using same 审中-公开
标题翻译：形成尼龙硅胶膜的方法和使用其制造半导体器件的方法
公开(公告)号：JP2005150752A
公开(公告)日：2005-06-09
申请号：JP2004333524
申请日：2004-11-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： KIM MIN-JOO , GU JIKIN , SAN MIN-CHUL , ROH KWAN-JONG
IPC分类号： H01L21/24 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/78
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a nickel silicide (NiSi) film for improving the thermal stability of the NiSi film, and further provide a method of manufacturing a thermally stable semiconductor device using it.
SOLUTION: The method comprises the steps of preparing an insulatiing film containing silicon and a substrate comprising a silicon region, depositing nickel on the substrate, making only an unreacted nickel film remain on the insulative region while selectively forming the NiSi film on the silicon region applying a first thermal treatment process at a first temperature of 300°C to 380°C onto the substrate having the deposited nickel, making only the NiSi film remain on the silicon region while selectively removing the unreacted nickel film and exposing the insulative region, and forming the thermally stable NiSi film without phase transition of the same by applying a second thermal treatment process at a second temperature higher than the first temperature onto the substrate from which the unreacted nickel film is removed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种形成用于提高NiSi膜的热稳定性的硅化镍（NiSi）膜的方法，并且还提供一种使用它来制造热稳定性半导体器件的方法。解决方案：该方法包括以下步骤：制备包含硅的绝缘膜和包含硅区域的衬底，在衬底上沉积镍，使得仅在非绝缘区域上保留未反应的镍膜，同时在硅区域在300℃至380℃的第一温度下对具有沉积的镍的衬底施加第一热处理工艺，使得仅在Ni衬底上保留NiSi膜，同时选择性地除去未反应的镍膜并暴露出绝缘区域并且通过在高于第一温度的第二温度下将第二热处理工艺施加到去除未反应的镍膜的基板上，形成不具有相变的热稳定的NiSi膜。版权所有（C）2005，JPO＆NCIPI

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