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1. 发明专利

JPH09251004A METHOD AND DEVICE FOR OPTICAL-ACOUSTIC ANALYZING 失效
公开(公告)号：JPH09251004A
公开(公告)日：1997-09-22
申请号：JP5896596
申请日：1996-03-15
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： ISHIZUKA MASUMI , HIROTA MOTOYA
IPC分类号： G01N29/00 , G01H3/00 , G01N21/00
摘要： PROBLEM TO BE SOLVED: To quantitatively analyze a sample without being affected by the amount of a sample filled in an optical-acoustic measurement cell, filling condition and fluctuation in irradiated light quantity, by irradiating the sample with the light of wave length which satisfies a specified condition. SOLUTION: The light of wavelength L and M which simultaneously satisfy conditional expressions I and II are selected and projected on a sample, an optical-acoustic signal intensity corresponding to the light of each wave length is detected, and, based on the ratio between detected optical-acoustic signal intensities, an analysis target is quantified. Iial and Iiam in the expression I are incident light intensity of wavelengths L and M poured on sample consisting only of an analysis target, and, Iibl and Iibm are incident light intensity of wave lengths L and M, poured on a sample of a composition wherein an analysis target is removed from a sample. Ial and Iam are optical-acoustic signal intensity detected when the sample consisting only of an analysis target is irradiated with the light of wavelengths L and M, and Ibl and Ibl are optical-acoustic signal intensity obtained when the sample clear of an analysis target is irradiated with the light of wavelengths L and M.

2. 发明专利

JP2007059384A Sample-cooling device and electron beam irradiation type analysis/observation apparatus having the same 有权
标题翻译：样品冷却装置和电子束辐照类型分析/观察装置
公开(公告)号：JP2007059384A
公开(公告)日：2007-03-08
申请号：JP2006195797
申请日：2006-07-18
申请人： Sumitomo Osaka Cement Co Ltd , 住友大阪セメント株式会社
发明人： ISHIZUKA MASUMI , KITANOBO TOSHISHIGE
IPC分类号： H01J37/20
摘要： PROBLEM TO BE SOLVED: To provide a sample-cooling device and an electron beam irradiation type analysis/observation apparatus having the same, which reduce deterioration, damages and the like of the sample, due to heating by an irradiation electron beam when analyzing and observing the sample of organic material, such as resin and the like deteriorating and damaged easily, by heating using an electron beam irradiation type analysis/observation apparatus, and enable to analyze and observe the sample without causing the flexibility of position, direction and the like of the sample to deteriorate.
SOLUTION: A sample stage 1 is constituted of a stage 2, a Peltier element 3 provided on a surface 2a of this stage 2, a pair of fixing arms 4 and 4 provided on both sides of the Peltier element 3, where the surface of the Peltier element 3 on the side of the sample 5 acts as a cooling surface for cooling the sample 5, its surface on the side of the stage 2 act as a heat generating surface, and the heat generated from the heat generating surface is released via the stage 2.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种样品冷却装置和具有该样品冷却装置的电子束照射型分析/观察装置，其通过照射电子束的加热减少样品的劣化，损伤等，通过使用电子束照射型分析/观察装置的加热来分析和观察诸如树脂等的有机材料的样品容易地劣化和损坏，并且能够分析和观察样品而不引起位置，方向和位置的柔性样品的样品变差。解决方案：样品台1由设置在该台2的表面2a上的台架2，珀耳帖元件3，设置在珀尔帖元件3的两侧的一对固定臂4和4构成，其中样品5侧的珀耳帖元件3的表面作为冷却样品5的冷却面，其台面2侧的表面作为发热面，发热面产生的热量为通过舞台2发行。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2001170858A MIRROR POLISHING METHOD FOR GRINDING SILICON WAFER 失效
公开(公告)号：JP2001170858A
公开(公告)日：2001-06-26
申请号：JP35560599
申请日：1999-12-15
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： KINOSHITA NOBORU , ANDO KAZUTO , YAMAMOTO YOSHITAKA , ISHIZUKA MASUMI , BIN ONKI , YASUNAGA NOBUO
IPC分类号： B24B37/00 , B24B37/20 , B24B37/24 , C09K3/14 , H01L21/304 , C08F299/06
摘要： PROBLEM TO BE SOLVED: To provide a mirror polishing method for grinding silicon wafer without causing machining damage such as scratching and forming a deteriorated layer by machining on a grinding silicon wafer surface, causing little surface roughness, generating little rolled edge, obtaining a high flatness easily, needing little amount of polishing, improving a throughput, having no problem in treating etching waste liquid and causing no damage to a polishing device and jigs. SOLUTION: This method is to mirror-polish a grinding silicon wafer by using a polishing slurry containing at least one type of barium carbonate particles, calcium carbonate particles and magnesium carbonate particles as grinding particles and a hard polishing pad with compressibility of 2% or less and with hardness of one of Asker hardness of 85 or more, JIS-A hardness of 85 or more or Shore D hardness of 40 or more.

4. 发明专利

JPH10142401A LOW-REFLECTIVITY TRANSPARENT CONDUCTIVE FILM AS WELL AS ITS PRODUCTION AND DISPLAY DEVICE 失效
公开(公告)号：JPH10142401A
公开(公告)日：1998-05-29
申请号：JP29551496
申请日：1996-11-07
申请人： SUMITOMO OSAKA CEMENT CO LTD
发明人： TAKAMIYA NAOKI , MORI KAZUMICHI , ISHIZUKA MASUMI
IPC分类号： G02B1/10 , B32B7/02 , B32B15/08 , C09D5/24 , C09D7/12 , G02B1/111 , G02B1/16 , G09F9/00 , H01J9/20 , H01J29/89
摘要： PROBLEM TO BE SOLVED: To obtain a low-reflectivity transparent conductive film which has extremely light transparency, is lessened in reflection, has the lessened color irregularity of reflected light and has excellent antistatic electromagnetic shielding properties by adopting the two-layered constitution composed of a transparent conductive film having a specific film thickness and a transparent thin film having the refractive index different from the refractive index of this conductive film. SOLUTION: This low-reflectivity transparent conductive film 4 is formed on the surface of the face panel 3 of a cathode ray tube 5. The low-reflectivity transparent conductive film 4 is constituted by forming the transparent thin film 2 having the refractive index different from the refractive index of the transparent conductive film 1, which contains silver as metal and is specified in its film thickness (h) to a range within >=5 to

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