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1. 发明专利

JPH11186623A MAGNETIC SENSOR 失效
公开(公告)号：JPH11186623A
公开(公告)日：1999-07-09
申请号：JP35742597
申请日：1997-12-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HISAGAI YUICHI , NAGAISHI RYUKI , ITOZAKI HIDEO
IPC分类号： B82B1/00 , G01R33/035 , H01L39/22 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a high-performance inexpensive magnetic sensor. SOLUTION: A magnetic sensor is provided with a magnetic flux transducer 2 having a superconducting thin film 2f formed on a sapphire substrate 2s and a superconducting quantum interference device (SQUID) 1 arranged on the transducer 2 in a state where the device 1 is faced oppositely to the transducer 2. Since the substrate 2s which can be increased in size is used for the transducer 2, the effective magnetic flux capturing area of the sensor can be increased by increasing the magnetic flux introduced to the SQUID 1 from the transducer 2 even when the size of the SQUID 1 is reduced. Therefore, the detecting ability of the sensor can be improved and, at the same time, the manufacturing cost of the sensor can be reduced by reducing the size of the SQUID 1.

2. 发明专利

JPH1197753A CHIP CARRIER FOR SUPERCONDUCTIVE CIRCUIT CHIP AND MEASURING DEVICE USING THE SAME 失效
公开(公告)号：JPH1197753A
公开(公告)日：1999-04-09
申请号：JP26002297
申请日：1997-09-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TOYODA HARUHISA , HIRANO TETSUYA , NAGAISHI RYUKI , ITOZAKI HIDEO
IPC分类号： G01R33/035 , A61B5/05 , H01L39/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To improve a cooling efficiency by positioning a metal plate between a metal block and a superconductive circuit chip so that it touches both the metal block and the superconductive circuit chip, allowing an insulator to have wiring being connected to the superconductive circuit element of the superconductive circuit chip and to be supported by a metal plate. SOLUTION: A chip carrier has a metal plate 3 that is provided between a metal block 8 and a superconductive circuit block 20 so that it directly touches both the metal block 8 and the superconductive circuit chip 20 and an insulator 4 being mounted to the metal plate 3. The pad electrode of the superconductive circuit block 20 is electrically connected to the connection part of wiring on the insulator 4 by a bonding wire 5. The connection part of the wiring is connected to a lead wire 7 via solder 6. Since the metal plate 3 (with better thermal conductivity than an insulator such as sapphire) that directly touches both the metal block 8 to be cooled and the superconductive circuit chip 20 is provided between them, a cooling efficiency can be improved.

3. 发明专利

JPH10170618A MAGNETIC SENSOR ELEMENT OPERATING CIRCUIT 失效
公开(公告)号：JPH10170618A
公开(公告)日：1998-06-26
申请号：JP34280596
申请日：1996-12-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TOYODA HARUHISA , NAGAISHI RYUKI , ITOZAKI HIDEO
IPC分类号： G01R33/035
摘要： PROBLEM TO BE SOLVED: To provide an operating circuit in which number of wires and the amount of evaporated coolant have been reduced by using two terminals to communicate signals with a SQUID(Superconductive Quantum Interference Device) which is used as a magnetic sensor. SOLUTION: In the magnetic sensor element operating circuit 2, two terminals t1 , t0 electrically connected to a bias current supply 22 are electrically connected to the both ends of a SQUID element 11 used as a magnetic element, and bias current is supplied to the SQUID element. A step-up transformer 22T is also connected between the two terminals t1 , t0 via a series resistance 22R. Because the series resistance 22R controls the flowing current of the step-up transformer 22T not to saturate a magnetic core, the step-up transformer effectively amplifies voltage outputted from the SQUID element 11.

4. 发明专利

JPH07318625A OXIDE SUPERCONDUCTING FLUX TRANSFORMER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07318625A
公开(公告)日：1995-12-08
申请号：JP4637695
申请日：1995-02-10
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HISAGAI YUICHI , NAGAISHI RYUKI
IPC分类号： G01R33/035 , H01F6/06 , H01L39/22
摘要： PURPOSE:To obtain a flux transformer in which the characteristics inherent to a thin film is utilized by laminating a plurality of oxide superconducting thin films directly onto a non-superconducting thin film except the parts immediately above and below the non-superconducting thin film. CONSTITUTION:An oxide superconducting thin film applied onto a substrate 10 is patterned to form a pattern of a first oxide superconducting thin film 11 collectively except the bridge part of a second connection line 4. A non- superconducting thin film 12 is then formed entirely on the substrate 10 and it is removed eventually except the intersection of the signal line. Subsequently, a second oxide superconducting thin film 13 having a pattern corresponding to the entire exposed region of the oxide superconducting thin film, when viewed from above, is formed thus completing an oxide superconducting flux transformer. The thin film 13 itself is patterned specifically after the oxide superconducting thin film is applied entirely onto the substrate 10. Consequently, two thin film layers 11, 13 are laminated on the substrate 10 in the region where the thin film 13 is formed.

5. 发明专利

JPH07240543A METHOD OF FORMING STEP IN FILM FORMING SUBSTRATE 失效
公开(公告)号：JPH07240543A
公开(公告)日：1995-09-12
申请号：JP5308894
申请日：1994-02-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , ITOZAKI HIDEO
IPC分类号： H01L21/302 , H01L39/24
摘要： PURPOSE:To form an excellent oxide superconductive thin film on a worked substrate without deteriorating the etched surface of the substrate by a method wherein the surface of the substrate where a film is formed is etched with a laser beam to form a step. CONSTITUTION:A beam expander 32, a beam homogenizer 33, a photomask 34, and a projecting lens 35 are successively disposed between an excimer laser emission source 31 and a SrTiO3 single crystal substrate 2 to be worked as aligned with the optical axis of the excimer laser emission source 31. The film forming surface of the SrTiO3 single crystal substrate 2 is etched in accordance with the photomask 34 as irradiated with an excimer laser beam. By this setup, an excellent oxide superconductive thin film can be formed on the worked substrate 2 without deteriorating the etched surface of the substrate. Moreover, an etching process takes place in the air, so that a substrate can be worked efficiently without the trouble of atmosphere control.

6. 发明专利

JPH05286717A 失效
公开(公告)号：JPH05286717A
公开(公告)日：1993-11-02
申请号：JP11304492
申请日：1992-04-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , NAKANISHI SHUSUKE , ITOZAKI HIDEO
IPC分类号： C01G1/00 , C01G3/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form the thin film excellent in surface properties and superconductivity with good reproducibility by irradiating a target with a laser beam via a through-hole slightly smaller than the beam in the laser vapor deposition process. CONSTITUTION:A vacuum vessel 1 consists of a substrate holder 2, a target holder 3 and a transparent window 4. A laser device 5 is provided with a laser beam focusing optical line 8 and a slit 9 furnished with a through-hole slightly smaller than the beam line. Consequently, only the center of the laser beam reaches a target 7, and the target is irradiated with a high and uniform beam. For example, a (100) substrate of an MgO single crystal is used as a substrate 6, and a multiple oxide sintered compact of YBa2Cu3O7 is used as the target 7. A 70X70mm brass sheet with 2mm thickness is used for the slit 9 and a 6X24mm through-hole is used. The temp. of the substrate is controlled to 700 deg.C, the gas pressure to 400m Torr and the energy density of the laser beam to 1.5-2.0J/cm , and a thin film having 2000Angstrom thickness is formed.

7. 发明专利

JPH04187507A PRODUCTION OF OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH04187507A
公开(公告)日：1992-07-06
申请号：JP31930290
申请日：1990-11-22
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , OTA YUKIHIRO , FUJIMORI NAOHARU
IPC分类号： C01B13/14 , C01G1/00 , C30B29/22
摘要： PURPOSE:To obtain through the laser ablation technique the title high-quality thin film excellent in superconducting characteristics without damaging the film formed, by passing an oxygen plasma in parallel with the film-forming plane of a substrate. CONSTITUTION:A stock target 6 is irradiated with laser beams from a laser generator 1 through a condensing lens 2 and a laser incident window 12 and the objective oxide superconductor thin film is produced on a substrate 4 set up against the target 6. In this case, when the target 6 is to be irradiated with the laser beams, an oxygen plasma from a plasma generator 8 is passed, close to the substrate 4, in parallel with the film-forming plane of the substrate 4.

8. 发明专利

JPH04179282A SUPERCONDUCTING ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04179282A
公开(公告)日：1992-06-25
申请号：JP30827090
申请日：1990-11-14
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , TANAKA SABURO , ITOZAKI HIDEO
IPC分类号： H01L39/22 , H01L39/24
摘要： PURPOSE:To integrally form the entire part for not only easy manufacture but also stable characteristics by forming a region, wherein ions of a substance which easily diffuse into an oxide superconductor and deteriorate superconductive characteristics of the oxide superconductor are implanted, into a part of an oxide superconducting thin film formed on a substrate. CONSTITUTION:An oxide superconducting thin film 10 having a junction layer 3, which is formed like a line along the entire width of a superconducting element by arsenic ion implantation, is formed as a Josephson element. A MgO single crystal substrate is used as a substrate and a Y1Ba2Cu3O7-X is used as an oxide superconductor. First, an oxide superconducting thin film 10 is formed on the MgO substrate 4. The oxide superconducting thin film 10 of C-axis orientation is grown and formed on the substrate 4 by the sputtering method with a sintered material including Y, Ba and Cu in terms of the atomic ratio of 1:2:4.5 used as a target. Next, photoresists 5, 6 are formed on the oxide superconducting thin film 10 with an interval of 0.5mum and the arsenic ions implanted into the oxide superconducting thin film 10. The arsenic ions are diffused into the region where the ions are implanted to form a junction layer 3 of 500 to 100nm in thickness and a superconducting junction is formed of a junction layer 3 between the superconducting layers 1 and 2.

9. 发明专利

JPH04152685A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH04152685A
公开(公告)日：1992-05-26
申请号：JP27849890
申请日：1990-10-17
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , TANAKA SABURO , ITOZAKI HIDEO
IPC分类号： H01L39/22
摘要： PURPOSE:To form the whole element integrally so as to enable it to be easily formed and stabilized in characteristic by a method wherein a layer of material which diffuses into an oxide superconductor to turn it into a non-superconductor is formed, and a non-superconducting layer is formed of an oxide superconductor which is turned non-superconductive by the diffusion of the material concerned. CONSTITUTION:A superconducting element is formed of an oxide superconducting thin film 10 provided onto a board 4 provided with an Si layer 40 on its surface. The oxide superconducting thin film 10 provided onto a part other than the Si layer 40 is formed into superconducting layers 1 and 2 made of crystal orientated in a C axis. Si atoms are diffused into the oxide superconducting thin film 10 adjacent to the Si layer 40 to partially turn the film 10 into a non-superconducting layer 3. The oxide superconducting thin film 10 is extremely small in thickness at a part 20 located on the side face of the Si layer 40, and the superconducting layers 1 and 2 are made to constitute a superconductive junction at the part 20 concerned. This superconducting element can be formed without laminating a non-superconducting thin film or the like on an oxide superconducting thin film. The superconducting element is formed of an oxide superconducting thin film originally formed in one piece, so that an interface between a superconducting layer and a non-superconducting layer can be formed very sharp.

10. 发明专利

JPH0445263A PRODUCTION OF THIN FILM WITH LARGE AREA 失效
公开(公告)号：JPH0445263A
公开(公告)日：1992-02-14
申请号：JP15420990
申请日：1990-06-13
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： NAGAISHI RYUKI , OTA YUKIHIRO , FUJIMORI NAOHARU
IPC分类号： C04B41/87 , B01J19/12 , C23C14/28
摘要： PURPOSE:To form a thin film having large area and reduced in film thickness distribution by carrying out vapor deposition while changing the part where a thin film is deposited by displacing a substrate in a laser vapor deposition method. CONSTITUTION:The inside of a chamber 1 is evacuated and an oxygen- containing gas is supplied via a nozzle 6, and then, a target 5 on a turntable 11 turning by means of a motor 14 is irradiated with pulse laser light generated in a laser device 10 via a condensing lens 9 and an entrance window 7. At this time, a control device 13 is constituted so that the end of a plume generated when the target 5 is irradiated with the pulse laser light is brought into contact with the different part of the substrate 2 with every pulse by sending a control signal to an XY stage 12 and displacing the substrate 2 on a substrate holder 3 with every pulse. By this method, the thin film having a large area and reduced in film thickness and film quality distributions can be formed on the substrate 2.

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