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1. 发明专利

JP2567446B2 失效
公开(公告)号：JP2567446B2
公开(公告)日：1996-12-25
申请号：JP6291588
申请日：1988-03-16
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJITA NOBUHIKO , FUJIMORI NAOHARU , ITOZAKI HIDEO , TANAKA SABURO , HARADA KEIZO , JODAI TETSUJI
IPC分类号： C23C14/08 , C01G1/00 , C01G3/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24

2. 发明专利

JP2567416B2 失效
公开(公告)号：JP2567416B2
公开(公告)日：1996-12-25
申请号：JP25318787
申请日：1987-10-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA SABURO , FUJITA NOBUHIKO , ITOZAKI HIDEO , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24

3. 发明专利

JP2544759B2 失效
公开(公告)号：JP2544759B2
公开(公告)日：1996-10-16
申请号：JP32238087
申请日：1987-12-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA SABURO , ITOZAKI HIDEO , HIGAKI KENJIRO , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C01G3/00 , C01G1/00 , C04B41/87 , C23C14/08 , C23C14/24 , C23C14/40 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/24

4. 发明专利

JP2519773B2 失效
公开(公告)号：JP2519773B2
公开(公告)日：1996-07-31
申请号：JP7126988
申请日：1988-03-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJIMORI NAOHARU , HARADA KEIZO , ITOZAKI HIDEO , TANAKA SABURO , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C01G3/00 , C01G1/00 , H01B12/12 , H01L39/12

5. 发明专利

JP2519736B2 失效
公开(公告)号：JP2519736B2
公开(公告)日：1996-07-31
申请号：JP18202687
申请日：1987-07-21
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TAKEDA YOSHINOBU , AMANO NOBUYA , YATSU SHUJI , JODAI TETSUJI
IPC分类号： B28B1/00 , C01G1/00 , C04B35/00 , C04B35/45 , H01B12/02 , H01B12/04 , H01B13/00

6. 发明专利

JP2514690B2 失效
公开(公告)号：JP2514690B2
公开(公告)日：1996-07-10
申请号：JP10932788
申请日：1988-05-02
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： YAMAMOTO SUSUMU , KAWABE NOZOMI , MURAI TERUYUKI , YATSU SHUJI , JODAI TETSUJI
IPC分类号： H01B12/02 , B28B1/00 , H01B13/00

7. 发明专利

JPH0244011A PRODUCTION OF SUPERCONDUCTING MEMBER 失效
公开(公告)号：JPH0244011A
公开(公告)日：1990-02-14
申请号：JP9978088
申请日：1988-04-22
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： IWATA KOICHI , FUJIKAWA HIROYUKI , YATSU SHUJI , JODAI TETSUJI
IPC分类号： H01L39/24 , C01B13/14 , C01G1/00 , C01G3/00 , C25D13/02 , H01B12/06 , H01B13/00
摘要： PURPOSE:To obtain a wire rod having highly stable superconducting characteristics and a freely selectable shape by depositing starting material powder of a compound oxide superconducting material dispersed in a liquid contg. an ionized carrier to a surface of a substrate by electrodeposition, then sintering the powder after evaporating the carrier. CONSTITUTION:At least a kind of starting material powder consisting of (i) constituting elements of a compound oxide for said superconducting material, (ii) compds. contg. at least one kind of constituting elements for said compound oxide, or (iii) that obtd. by sintering (i) or (ii) and pulverizing a sintered body obtd. thereby, is used. The starting material powder is dispersed in a liquid contg. an ionized carrier such as a soln. of methacrylic resin in an org. solvent. A substrate and an electrode confronting the substrate are dipped in the liquid, and said ionized carrier is deposited to the surface of the substrate by impressing a DC voltage across the substrate and the electrode. In this case, the substrate may be formed to an optional shape such as coil, etc. Then, the carrier is evaporated by heating off the substrate to which the starting material powder has been deposited, then the starting material powder layer is sintered to obtain thus a compound oxide layer.

8. 发明专利

JPH02391A SUPERCONDUCTIVE FIELD-EFFECT TRANSISTOR 失效
公开(公告)号：JPH02391A
公开(公告)日：1990-01-05
申请号：JP27862988
申请日：1988-11-04
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： FUJIMORI NAOHARU , HARADA KEIZO , YATSU SHUJI , JODAI TETSUJI , ITOZAKI HIDEO
IPC分类号： H01L21/28 , H01L29/43 , H01L29/78 , H01L29/786 , H01L39/22
摘要： PURPOSE:To obtain a high-speed three terminal element, operating speed of which is increased and density of which is elevated, by filling a channel between two electrodes of a composite oxide group superconductive material with a semiconductor layer and forming a third electrode for applying an electric field to the semiconductor layer. CONSTITUTION:A source electrode 3 and a drain electrode 1 are shaped onto the (100) face of an MgO or SrTiO3 single crystal substrate 4 by a composite oxide superconductor having oxygen deficiency type perovskite crystal structure such as Y1Ba2Cu3 O7-x. A semiconductor layer 5 composed of Si, GaAs, etc. is filled and formed into a channel region between the electrodes 1, 3, and an insulator layer 6 consisting of SiO2, etc., and a gate electrode made of Al are shaped. An element having such constitution is used as a high-speed three terminal element in which superconductive currents are made to flow into the semiconductor 5 by utilizing a superconductive proximity effect. Since the difference of the thermal expansion coefficients of the substrate 4 and the electrodes 1, 3 is diminished, the effect of heat history in a manufacturing process is reduced. Since the electrodes 1, 3 are shaped onto the (100) face of the substrate 4, the direction that currents are easy to flow can be made to run parallel with the surface, and critical current density JC can be increased.

9. 发明专利

JPH01280380A SEMICONDUCTOR SUBSTRATE HAVING SUPERCONDUCTOR LAYER 失效
公开(公告)号：JPH01280380A
公开(公告)日：1989-11-10
申请号：JP11002388
申请日：1988-05-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HARADA KEIZO , FUJIMORI NAOHARU , YATSU SHUJI , JODAI TETSUJI
IPC分类号： H01L39/02 , C01G1/00 , C04B41/89 , C23C14/08 , C23C16/30 , C30B29/22 , H01B12/06 , H01L21/84
摘要： PURPOSE:To obtain a semiconductor substrate having, on a semiconductor single-crystal substrate, a composite oxide superconductor thin-film layer whose superconducting characteristics including a critical temperature are excellent by a method wherein the thin-film layer composed of a composite oxide superconductor is formed on a substrate provided with a buffer layer composed of ZrO2 or MgO formed on a 3C-SiC single crystal. CONSTITUTION:A thin-film layer composed of a composite oxide superconductor is formed on a substrate provided with a buffer layer composed of ZrO2 or MgO formed on a 3C-SiC single crystal. It is desirable that the ZrO2 buffer layer or the MgO buffer layer is formed on a (100) plane of the 3C-SiC single- crystal substrate. In addition, it is desirable that the ZrO2 or MgO buffer layer is formed by using a method of sputtering, ion plating, molecular beam epitaxy, CVD or the like; it is desirable that its film thickness is 50 to 1000Angstrom . In addition, it is desirable that also the composite oxide superconductor layer is formed by using the method of sputtering, ion plating, molecular beam epitaxy, CVD or the like.

10. 发明专利

JPH01175115A SUPERCONDUCTIVE WIRE ROD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01175115A
公开(公告)日：1989-07-11
申请号：JP33230487
申请日：1987-12-29
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TANAKA SABURO , ITOZAKI HIDEO , HIGAKI KENJIRO , YATSU SHUJI , JODAI TETSUJI
IPC分类号： C04B41/87 , C01G1/00 , C04B35/45 , C30B29/22 , H01B12/04 , H01B13/00 , H01L29/12 , H01L39/12
摘要： PURPOSE:To increase the critical current density of superconductive wire rod by physically evaporating a composite oxide superconductive thin film, which mainly contains perovskite oxide or pseudo-perovskite oxide, on the core under the condition that the substantial portion of the thin film surface becomes smooth. CONSTITUTION:A composite oxide superconductor thin film, which mainly contains composite oxide as expressed in a formula 1, is formed on the peripheral surface of the core by physical evaporation. The physical evaporation is conducted under the condition that the substantial portion of the thin film formed becomes smooth. The smoothness of the thin film should be made such that when the roughness of the thin film surface Rmax (standard length is 100mum) is optically observed, it indicates 0.05mum or less. The composite oxide mentioned here includes HO1Ba2Cu3O7-x, Er1Ba2Cu3O7-x, Y1Ba2Cu3O7-x and Dy1Ba2Cu3O7-x (where x is the number which meets 0

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