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    • 6. 发明专利
    • COMPOSITE MATERIAL CONSISTING OF SILICON WAFER AND CARBON MATERIAL
    • JPH10233475A
    • 1998-09-02
    • JP36367997
    • 1997-12-16
    • SENTAN ZAIRYO KK
    • KAWAMURA NORIAKITSUSHIMA EIKI
    • C04B37/00C04B37/02H01L21/02H01L23/373
    • PROBLEM TO BE SOLVED: To prevent a defect, such as peeling and a crack, from being generated in a composite material to a thermal shock or the like in a semiconductor package manufacturing process and at the time of the use of a semiconductor package by a method wherein the composite material is formed into a structure wherein a flat plate consisting of a thermal stress relaxation carbon material is provided on the surface on one side of the surfaces of a silicon wafer or a compound semiconductor wafer via an adhesion layer. SOLUTION: A composite material is formed into a structure wherein a flat plate 3, which is sliced and is made of a thermal stress relaxation carbon material consisting of a carbon material, is bonded to the rear of a silicon wafer or a compound semiconductor wafer 1 prior to a pelletizing process via an adhesion layer. It is preferable that the thickness of the relaxation carbon material is 0.1 to 1.0mm so that the relaxation carbon material can fulfill the thermal stress relaxation function from the viewpoint of heat conductivity. Thereby, the thermal stress generated in the composite material, which consists of the silicon wafer 1 and the flat plate 3 consisting of the carbon material, is so low that it can be ignored even if a temperature rise due to the heat generation of a semiconductor element is generated and the composite material is never broken. Moreover, as the composite material rapidly dissipates heat, which is generated from the element, the flat plate 3 consisting of the relaxation carbon material and the element function, so to speak, as one body.