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1. 发明专利

JP2004310477A Memory card 有权
公开(公告)号：JP2004310477A
公开(公告)日：2004-11-04
申请号：JP2003103560
申请日：2003-04-08
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： SHINAGAWA CHIAKI , KANAMORI SAKAKI , SHIRAISHI ATSUSHI
IPC分类号： G06K19/07 , G06F12/00 , G06F12/02 , G11C16/16
CPC分类号： G11C16/107 , G11C16/16
摘要： PROBLEM TO BE SOLVED: To provide a memory card for accelerating the writing of data. SOLUTION: A memory card (1) comprises an erasable and writable nonvolatile memory (2) and a control circuit (5). The memory array of the above nonvolatile memory comprises an erasure table with a first flag to show whether or not the memory area is an empty area by every erasure unit. For example, when the number of memory areas in which data which can be erased are written reaches a certain number, the control circuit performs preliminary erasure control to preliminarily erase the data which can be erased from the memory areas corresponding to the first flag showing that the memory area is empty. Thus, the erasure processing is preliminarily performed to the empty memory area so that any necessity to insert erasure processing just before writing processing using the empty memory area can be decreased, and that the writing of data in the memory card can be accelerated. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005284700A Memory card 有权
标题翻译：存储卡
公开(公告)号：JP2005284700A
公开(公告)日：2005-10-13
申请号：JP2004097458
申请日：2004-03-30
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： ASARI SHINSUKE , SHINAGAWA CHIAKI , NAKAMURA YASUHIRO , KANAMORI SAKAKI , SHIRAISHI ATSUSHI
IPC分类号： G06F12/16 , G11C29/00 , G11C29/26
CPC分类号： G11C29/883 , G11C11/5635 , G11C16/04 , G11C29/26 , G11C29/76 , G11C29/88
摘要： PROBLEM TO BE SOLVED: To considerably lengthen the service life of a memory card following the occurrence of a defective block.
SOLUTION: A control logic searches the presence of an acquired defect in a block of a flash memory based on a defect factor code stored in a management information part of the flash memory, performs write/read comparison of data to the defective block in the case of detecting the defective block, and determines whether the block is normal. The block determined to be normal is registered as a normal block by rewriting a defect factor code of the corresponding block, and the registered block is stored as a writable block in a write management table of a management region. The originally normal block determined to be defective by an erratic error or the like can thereby be recovered.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在发生故障块后，显着延长存储卡的使用寿命。解决方案：控制逻辑基于存储在闪速存储器的管理信息部分中的缺陷因子代码来检测闪速存储器块中获得的缺陷，执行数据到缺陷块的写/读比较在检测到故障块的情况下，判断块是否正常。被确定为正常的块通过重写相应块的缺陷因子代码而被注册为正常块，并且将注册块作为可写入块存储在管理区域的写入管理表中。因此可以恢复由误差等错误确定的原始正常块。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004310650A Memory device 审中-公开
公开(公告)号：JP2004310650A
公开(公告)日：2004-11-04
申请号：JP2003106360
申请日：2003-04-10
申请人： Renesas Technology Corp , 株式会社ルネサステクノロジ
发明人： SHINAGAWA CHIAKI , SHIRAISHI ATSUSHI , KANAMORI SAKAKI
IPC分类号： G06F12/16 , G06F12/00 , G06F12/02 , G06K19/07 , G11C16/02 , G11C16/10 , G11C16/34
CPC分类号： G11C16/3495 , G06F12/0246 , G06F2212/1036 , G06F2212/7211 , G11C16/349
摘要： PROBLEM TO BE SOLVED: To preliminarily prevent any accident to change data due to the accumulated influence of disturbance in a memory area which rewriting dose not generate is prevented beforehand. SOLUTION: A memory device comprises an erasable and writable nonvolatile memory (2) and a control circuit (5). The control circuit is made possible to perform the replacing processing of a memory area in a predetermined timing. The replacing processing is performed by writing the stored data of a first memory area, which has relatively a fewer number of times of rewrite, in a second memory area which is not used and replaces the first memory area with the second memory area, where the data has been written, as a working area. Thus, a memory area which has a fewer number of times of rewrite is used as an object to be replaced with another memory area so that it is possible to preliminarily prevent any accident to change illegal data due to the accumulated influence of disturbance in a memory area which has no rewrite. COPYRIGHT: (C)2005,JPO&NCIPI

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