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1. 发明专利

JPH01286999A METHOD FOR EPITAXIAL GROWTH OF GALLIUM ARSENIDE 失效
公开(公告)号：JPH01286999A
公开(公告)日：1989-11-17
申请号：JP11647888
申请日：1988-05-13
申请人： RIKAGAKU KENKYUSHO , NIPPON STEEL CORP
发明人： NANBA SUSUMU , MORIYA AKIHIRO , AOYANAGI KATSUNOBU , IIMURA YASUFUMI , NAGATA AKIRA
IPC分类号： C30B23/08 , C30B29/42 , H01L21/203
摘要： PURPOSE:To reduce donor impurity concentration and increase mobility of positive holes, by introducing H2 or AsH3 gas into a vacuum vessel and controlling the interior of the vessel to a specific H2 gas partial pressure. CONSTITUTION:A substrate 6 arranged in a reaction vessel 5 kept at >=5X10 Torr vacuum degree is heated to Torr. Alternatively, AsH3 10 is introduced from a nozzle so as to keep hydrogen partial pressure produced therefrom at 1X5-10 Torr to epitaxially grow GaAs on the substrate 6.

2. 发明专利

JPH01238114A PREPARATION OF SEMICONDUCTOR QUANTUM FINE LINE 失效
公开(公告)号：JPH01238114A
公开(公告)日：1989-09-22
申请号：JP6504188
申请日：1988-03-18
申请人： RIKAGAKU KENKYUSHO
发明人： IIMURA YASUFUMI , SHIMOMURA SATORU , MIHARA MASARU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/203 , H01L21/20 , H01L21/302 , H01L21/3065 , H01L29/06
摘要： PURPOSE:To form a fine-gage wire onto a substrate in a quantum order with high accuracy by a method wherein a plurality of layers are shaped onto the substrate through an epitaxial method, the layers are treated together with the substrate so that fault planes appear, the appearing fault planes are etched selectively, and a layer is formed onto the fault planes. CONSTITUTION:An AlGaAs insulating film layer 12 is shaped onto a GaAs substrate 11 in a molecular-beam epitaxial device, a GaAs semiconductor thin-film layer 13 is formed in film thickness of 500Angstrom or less, an insulating film layer 14 is shaped again, the whole is extracted from the device, and cloven in the direction of a broken line, and the cross sections of laminating are exposed. The whole is set into the molecular-beam epitaxial device again, and only the GaAs semiconductor thin-film layer 13 is thermally etched selectively or only the GaAs semiconductor thin film layer 13 is chemically etched by using the mixed liquid of ammonia and hydrogen peroxide water on the outside of a vacuum device while the molecular beams of As are applied to a laminated-film structure element at a substrate temperature of 700 deg.C or more. A laminated film composed of GaAs and AlGaAs is grown on the whole of a cleavage plane after etching treatment. Accordingly, the quantum fine-gage wire 16 of GaAs is formed into a trench section from which GaAs is removed.

3. 发明专利

JPH02229425A DOPING OF III-V COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH02229425A
公开(公告)日：1990-09-12
申请号：JP4970189
申请日：1989-03-01
申请人： RIKAGAKU KENKYUSHO
发明人： IIMURA YASUFUMI , DEN SHOJI , NAGATA AKIRA , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01L21/205 , H01L21/203
摘要： PURPOSE:To control an amount of impurities in a crystal highly accurately and simply by a method wherein an energy and a density, i.e., a filament current and a grid voltage, of an electron beam which is applied to a Group III organic metal compound gas as a dopant gas containing dopant atoms are changed and a raw-material gas is operated. CONSTITUTION:When the Group III organic compound gas is passed inside a grid 18, it collides with thermoelectrons; its one part is decomposed and ionized and reaches a substrate 26. On the other hand, a Group V compound gas is pyrolyzed by using a heater 30; Group V atoms reach the substrate 26. A sufficient surface mobility is given to Ga and As which have reached the substrate 26; a growth film is heated so as to be transformed into a single crystal. In addition, an extraction electrode 32 and a quadruple pole 34 are installed between the grid 18 and the substrate 26. The Group V organic compound gas is decomposed and ionized inside the grid 18; after that, only ions containing carbon atoms are introduced into the quadruple pole 34 by using the extraction electrode 32; only desired ions are incident on the growth substrate 26. As a result, impurities can be controlled with a higher accuracy.

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