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1. 发明专利

JP2002071736A METHOD FOR MEASURING SURFACE LEAKAGE CURRENT OF SAMPLE 失效
公开(公告)号：JP2002071736A
公开(公告)日：2002-03-12
申请号：JP2000259869
申请日：2000-08-29
申请人： RIGAKU DENKI CO LTD , MITSUBISHI ELECTRIC CORP
发明人： HIRAYAMA YASUO , ITO KOICHIRO , HATTORI AKIRA , MIYAKUNI SHINICHI , NOTANI YOSHIHIRO , YAMAMOTO YOSHITSUGU
IPC分类号： G01R27/02 , G01N1/44 , G01N27/00 , G01N27/04 , G01Q60/00
摘要： PROBLEM TO BE SOLVED: To highly accurately measure a surface leakage current of a sample without removing an adhering substance on the sample surface at a different facility beforehand, and enable it to be confirmed whether or not the adhering substance on the sample surface is completely detached. SOLUTION: A pair of electrodes 52 and 54 are formed to the surface of the sample 50. In a state with a voltage impressed between the pair of electrodes 52 and 54, an energy ray 62 is irradiated to a region of the sample surface between the electrodes 52 and 52, whereby the adhering substance 60 is detached from the sample surface. A current flowing between the electrodes 52 and 54 is measured while the energy ray 62 is being irradiated. The surface leakage current flowing through the adhering substance 60 can be observed while the adhering substance 60 is present. The surface leakage current caused by the adhering substance 60 disappears when the adhering substance 60 is completely detached. Therefore, it can be confirmed that the adhering substance 60 is completely detached at a time point when the surface leakage current resulting from the adhering substance 60 disappears. Thereafter, the surface leakage current originating from the sample can be measured by stopping irradiating the energy ray 62.

2. 发明专利

JP2002071599A SAMPLE ASSEMBLY FOR THERMOELECTRIC MEASURING INSTRUMENT 失效
公开(公告)号：JP2002071599A
公开(公告)日：2002-03-08
申请号：JP2000259868
申请日：2000-08-29
申请人： RIGAKU DENKI CO LTD , MITSUBISHI ELECTRIC CORP
发明人： HIRAYAMA YASUO , ITO KOICHIRO , INAMI MASANOBU , MATSUO SHUICHI , HATTORI AKIRA , MIYAKUNI SHINICHI , NOTANI YOSHIHIRO , YAMAMOTO YOSHITSUGU
IPC分类号： G01R27/26 , G01N1/28 , G01N25/00 , G01N25/48
摘要： PROBLEM TO BE SOLVED: To reduce the contact electromotive force and thermoelectromotive force of a sample assembly for thermoelectric measuring instrument by improving the soaking property of the assembly by sticking the assembly to a substrate through an indium adhesive layer in a thermoelectric measuring instrument. SOLUTION: An aluminum nitride substrate 12 has an insulating property and good thermal conductivity. An intermediate layer 16 is formed at the center of the substrate 12, and relay terminal layers 24 and 26 are formed at both ends of the substrate 12. Each of the layers 16, 24, and 26 is formed in a three- layer structure of Ti, Mo, and Au layers from the substrate 12 side. A GaAs sample 14 is stuck to the upper surface of the intermediate layer 16 through an adhesive layer 18 composed of indium having good thermal conductivity. On the upper surface of the sample 14, a pair of electrode layers 20 and 22 is formed at an interval. Each of the electrode layers 20 and 22 is formed in a three-layer structure of AuGe, Ni, and Au layers from the sample 14 side. The electrode layers 20 and 22 of the sample 14 are respectively connected to the relay electrode layers 24 and 26 on the substrate 12 through Au wires 28 and 30.

3. 发明专利

JPH11195732A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11195732A
公开(公告)日：1999-07-21
申请号：JP108298
申请日：1998-01-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOTANI YOSHIHIRO
IPC分类号： H01L23/12 , H01L21/338 , H01L23/66 , H01L29/812 , H01P3/08 , H01P5/02 , H01P5/08
摘要： PROBLEM TO BE SOLVED: To prevent the increase in reflection loss, through impedance non- matching and to prevent parasitic oscillation. SOLUTION: A high frequency semiconductor chip 1 is provided with high frequency transmission lines L7a, and L7b of one surface and a ground conductor 5 of the other surface and a semiconductor package 8 is provided with the ground conductor 9 of one surface and the high frequency transmission lines L13a and L13b of the other surface. For this semiconductor device, the high frequency semiconductor chip 1 is loaded on the semiconductor package 8 and slots 4a, 10a, 4b and 10b are formed at the ground conductors 5 and 9 so as to respectively face each other and to face the high frequency transmission lines L7a, L13a, L7b and L13b and are electromagnetically connected between the high frequency transmission lines L7a and L13a and between the high frequency transmission lines L7b and L13b. Also, Ni conductors are formed on the ground conductor 5 which is positioned at the peripheral part of the slots 4a and 4b or the Ni conductors are formed on the ground conductor 9 positioned at the peripheral part of the slots 10a and 10b.

4. 发明专利

JPH1126645A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH1126645A
公开(公告)日：1999-01-29
申请号：JP17808297
申请日：1997-07-03
申请人： MITSUBISHI ELECTRIC CORP
发明人： HOSHI HIROYUKI , KATO TAKAYUKI , NOTANI YOSHIHIRO
IPC分类号： H01L21/60 , H01L23/28 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To avoid the decline of a gain, an output power, etc., which is caused by the adhesion of sealing agent to the surface of a semiconductor device and avoid the deterioration of high frequency characteristics. SOLUTION: Electrode metal bumps 13 which are formed at positions corresponding to electrode pads 14 on a multilayer MIC board 16 and a ring 12 which is formed outside the electrode metal bumps 13 and prevents sealing agent 19 from penetrating between a semiconductor device 11 and the multilayer MIC board 16 are provided on the mounting surface side of the semiconductor device 11. With this constitution, the penetration of the sealing agent 19 can be avoided and the adhesion of the sealing agent 19 to the surface of the semiconductor device 11 can be avoided. As a result, airtight flip-flop mounting which does not cause the deterioration of the performance in the high frequency range of the semiconductor device 11 can be realized.

5. 发明专利

JPH06181266A IC PACKAGE USED IN HIGH-FREQUENCY BAND 失效
公开(公告)号：JPH06181266A
公开(公告)日：1994-06-28
申请号：JP35308292
申请日：1992-12-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： KATO TAKAYUKI , NOTANI YOSHIHIRO
IPC分类号： H01L23/04 , H01L23/02 , H01L23/552 , H01L23/66 , H01P1/00 , H01P1/30 , H01P11/00
摘要： PURPOSE:To provide an IC package with small losses in reflection, conduction, and radiation, even in an ultra-high frequency band, especially a millimeter wave band above 30GHz. CONSTITUTION:By using a cap 20 made up of a ceiling part and a cavity wall 22 together in a body, an IC chip 8 mounted on a package body 1 is sealed so as to shorten a bonding wire and a transmission line 4. Moreover, a separation wall member 23 that is grounded is provided between the IC chips 8, and thereby isolation between chambers 25a and 25b can be improved.

6. 发明专利

JPH04312955A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04312955A
公开(公告)日：1992-11-04
申请号：JP6034391
申请日：1991-03-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOTANI YOSHIHIRO
IPC分类号： H01L21/301 , H01L21/78
摘要： PURPOSE:To prevent generation of cracks at the corner of a chip by eliminating mutual contact of the corners of the chips when a semiconductor wafer is separated from a chip separating line to obtain individual chips. CONSTITUTION:Grooves 3 or metal films 4 are respectively formed at intersections of chip separating lines 2 formed on a semiconductor wafer 1, and mutual contacts of the corners of chips 5 are eliminated to prevent extension of a crack of the corner of the chip.

7. 发明专利

JPH02122632A MANUFACTURE OF FIELD EFFECT TRANSISTOR 失效
公开(公告)号：JPH02122632A
公开(公告)日：1990-05-10
申请号：JP27798288
申请日：1988-11-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOTANI YOSHIHIRO
IPC分类号： H01L29/812 , H01L21/285 , H01L21/338 , H01L29/41
摘要： PURPOSE:To improve resistant pressure of a gate of a multilayer structure of FET by a method wherein evaporation of gate metal at the lowest layer in a multilayer gate is carried out from a slant direction. CONSTITUTION:After an n-type GaAs operation layer 2, a drain electrode 3, a source electrode 4 and a recess 5 are formed on a semi-insulating GaAs substrate 1, a resist 12 for forming a gate is applied, and gate metal A6 is deposited perpendicularly. Then, the gate metal A6 is evaporated in an evaporation direction D14 on only the resist 12 with an evaporation angle theta16 (approximately 45 deg. or smaller). Then, by evaporating the gate metal A6 from an evaporation direction E15 with the evaporation angle theta16 (approximately 45 deg. or smaller) only on the resist, the original resist 12 becomes a little larger due to the gate metal 6, to have opening width d17 reduced. Then, remaining gate metals B7 to D9 are deposited perpendicularly. This permits gate metals other than the gate metal A6 due to transfer of the resist or the like to be in contact with the n-type GaAs operating layer 2 preventing deterioration in gate resistant pressure and FET performance.

8. 发明专利

JP2006237226A High frequency semiconductor apparatus 有权
标题翻译：高频半导体器件
公开(公告)号：JP2006237226A
公开(公告)日：2006-09-07
申请号：JP2005049042
申请日：2005-02-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NOTANI YOSHIHIRO
IPC分类号： H01L27/04 , G01R31/26 , H01L21/82 , H01L21/822
CPC分类号： H01L27/0207 , H01L23/66 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05599 , H01L2224/0603 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48599 , H01L2224/49111 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/10161 , H01L2924/10162 , H01L2924/10329 , H01L2924/19051 , H01L2924/20752 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high frequency semiconductor apparatus of which degradation in high frequency characteristics at a wire bonding connection is reduced when operation frequency rises, without causing impedance mismatching.
SOLUTION: The high frequency semiconductor apparatus comprises a high frequency semiconductor device 1 formed on a semiconductor substrate 8, a high frequency signal transmission line 7 whose one end is connected to the high frequency semiconductor device 1, a high frequency signal inputting/outputting pad 2 connected to the other end of high frequency signal transmission line 7 so as to be vertical to the extension direction of the high frequency signal transmission line 7, and ground potential pads 4 and 5 formed on each side in lengthwise direction of the high frequency signal inputting/outputting pad 2. A dimension W
2 in widthwise direction of the high frequency signal transmission line 7 is preferred to substantially agree with a dimension W
1 in widthwise direction of the high frequency signal inputting/outputting pad 2, and a plurality of gold wires 3 and 3' are preferred to be connected in the lengthwise direction of the high frequency signal inputting/outputting pad 2.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种高频半导体装置，其在工作频率上升时降低了引线接合连接处的高频特性的劣化，而不会引起阻抗失配。解决方案：高频半导体装置包括形成在半导体衬底8上的高频半导体器件1，其一端连接到高频半导体器件1的高频信号传输线7，高频信号输入/ 与高频信号传输线7的另一端连接以便与高频信号传输线7的延伸方向垂直的输出焊盘2，以及形成在高频信号传输线7的长度方向两侧的接地电位焊盘4和5 频率信号输入/输出板2.在高频信号传输线7的宽度方向上的尺寸W 2 优选地与宽度方向上的尺寸W 1 ，并且多个金线3和3'优选地在高频信号输入/输出板2的长度方向上连接版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2000269282A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000269282A
公开(公告)日：2000-09-29
申请号：JP7399799
申请日：1999-03-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOTANI YOSHIHIRO
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device wherein characteristics is evaluated in wafer. SOLUTION: An IC pattern provided on a surface 50a of a substrate 1, recess 3 provided on a side surface while extending in the thickness direction of the substrate 1, signal input/output pad 2 connected to the IC pattern provided around the recess 3 on the surface, metal layer 4 formed at the recess 3 and conductive to the signal input/output pad 2, and ground conductor 7 formed on a backside 50b, are provided to a semiconductor device 50, wherein a signal is inputted/outputted to the IC pattern trough the metal layer 4 and signal input/output pad 2. Here, the metal layer 4 is so formed not to reach the backside 50b at the recess 3.

10. 发明专利

JPH1145909A MOUNTING STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1145909A
公开(公告)日：1999-02-16
申请号：JP19953797
申请日：1997-07-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NOTANI YOSHIHIRO , HOSHI HIROYUKI , KATO TAKAYUKI
IPC分类号： H01L21/60 , H01L23/12
摘要： PROBLEM TO BE SOLVED: To provide a mounting structure of a semiconductor device which realizes a microstrip transmission line structure effectively radiating the heat from a semiconductor device, and reduces the loss even at high frequency ranges, and allows the semiconductor device to be easily and accurately positioned. SOLUTION: The mounting structure mounts the surface 102 of a semiconductor device 101 outside. A ground surface 106 formed on the back side 103 of the semiconductor device 101 is electrically connected to the ground 110 of a board 108 through vias 104 and bumps 105 formed at the device 101, the bumps 105 being coupled with recesses 111 of the board 108.

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