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1. 发明专利

JP2012004368A Solid state image pickup device and method of manufacturing the same 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：JP2012004368A
公开(公告)日：2012-01-05
申请号：JP2010138353
申请日：2010-06-17
申请人： Panasonic Corp , パナソニック株式会社
发明人： TSUJI SHOICHIRO , YAMASHITA KAZUHIRO
IPC分类号： H01L27/14 , H04N5/369 , H04N9/07
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14687
摘要： PROBLEM TO BE SOLVED: To provide a solid state image pickup device and a method of manufacturing the same that can enhance uniformity of sensitivity and reduce chip size.SOLUTION: In a solid state image pickup device in which a pixel region 103 and a peripheral circuit region 102 for performing driving control of the pixel region and signal processing on an image pickup signal are provided, a multilayered wiring layer 121 comprising wiring of plural layers and an interlayer film are provided on a semiconductor substrate, an optical waveguide 107 is provided in an area at least corresponding to the pixel region between the multilayered wiring layers, and a waveguide member for controlling incident light to a photoelectric conversion element and an optical structure member comprising at least one or more of a color filter member 114, a lens member 115 and a flattening member 116 are provided in the region at least corresponding to the pixel region on the multilayered wiring layer and in a solid state image pickup device in which a waveguide member and an optical structure member comprising at least one or more of a color filter member, a lens member and a flattening member are provided at a part on the peripheral circuit, a groove in which the waveguide member on the image pickup element region portion is omitted is provided.
摘要翻译：要解决的问题：提供一种固态图像拾取装置及其制造方法，其可以增强灵敏度的均匀性并减小芯片尺寸。解决方案：在设置用于执行像素区域的驱动控制的像素区域103和外围电路区域102以及对摄像信号进行信号处理的固态图像拾取装置中，包括布线的多层布线层121 并且在半导体基板上设置有层间膜，在至少对应于多层布线层之间的像素区域的区域和用于控制入射到光电转换元件的入射光的波导部件的区域中设置有光波导107，在至少对应于多层布线层上的像素区域和固态图像拾取器的区域中设置包括滤色器构件114，透镜构件115和平坦化构件116中的至少一个的光学结构构件装置，其中波导构件和光学构件构件包括滤色器构件，透镜构件a中的至少一个或多个在外围电路的一部分设置有平坦化构件，设置省略了摄像元件区域部分上的波导构件的槽。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011258884A Solid-state imaging device and manufacturing method thereof 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：JP2011258884A
公开(公告)日：2011-12-22
申请号：JP2010134189
申请日：2010-06-11
申请人： Panasonic Corp , パナソニック株式会社
发明人： YAMASHITA KAZUHIRO
IPC分类号： H01L27/14 , H04N5/369 , H04N101/00
摘要： PROBLEM TO BE SOLVED: To reduce ripple that causes color unevenness and sensitivity unevenness in a solid-state imaging device having a high-refractive index film on an interlayer insulating film.SOLUTION: The solid-state imaging device comprises: a semiconductor substrate 11 having a plurality of light-receiving elements 12 each forming a pixel formed on the surface; a plurality of wires 14, 16, and 18 laminated on the semiconductor substrate 11 via a plurality of interlayer insulating films 20, 21, and 22; a high-refractive index film 23 having a refractive index higher than that of the interlayer insulating films and formed on the interlayer insulating film 22 positioned on the uppermost layer among the plurality of interlayer insulating films 20, 21, and 22; and a color filter 25 arranged on the high-refractive index film 23 via a flattening film 24 and for selecting a wavelength of light to be received by the light-receiving elements 12. The film thickness of the high-refractive index film 23 differs according to the wavelength of light transmitted through the color filter 25.
摘要翻译：要解决的问题：为了减少在层间绝缘膜上具有高折射率膜的固态成像装置中的颜色不均匀性和灵敏度不均匀性的波动。固体摄像器件包括：具有多个受光元件12的半导体衬底11，每个光接收元件12形成在该表面上形成的像素; 通过多个层间绝缘膜20,21和22层叠在半导体衬底11上的多个电线14,16和18; 形成在多个层间绝缘膜20,21和22中位于最上层的层间绝缘膜22上的折射率高于层间绝缘膜的折射率的高折射率膜23; 以及通过平坦化膜24布置在高折射率膜23上并用于选择由光接收元件12接收的光的波长的滤色器25.高折射率膜23的膜厚度根据对于透过滤色器25的光的波长。（C）2012，JPO＆INPIT

3. 发明专利

JP2010238726A Solid-state image pickup device and manufacturing method of the same 审中-公开
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：JP2010238726A
公开(公告)日：2010-10-21
申请号：JP2009082134
申请日：2009-03-30
申请人： Panasonic Corp , パナソニック株式会社
发明人： YAMASHITA KAZUHIRO
IPC分类号： H01L27/14 , H04N5/335 , H04N5/357 , H04N5/359 , H04N5/369 , H04N5/374 , H04N9/07
摘要： PROBLEM TO BE SOLVED: To suppress the mixing of colors caused by flare generated by reflected light from a wiring region between pixels at the periphery of a light receiving part and crosstalk in which incident light between micro lenses leaks to the adjacent pixels at the periphery of the light receiving part, and to prevent the flare, and the improve color reproducibility without deteriorating an incident angle characteristic. SOLUTION: A black filter layer 10 (reflection preventing layer) being a light absorbing layer is arranged on wiring between the light receiving parts 2. Even if strong light is made incident on a solid-state image pickup element and a part thereof is reflected on a Cu wiring film, reflected light is reduced. Thus, the flare generated by reflecting reflected light again on the seal glass of the solid-state image pickup element and making it incident to the solid-state image pickup element can be prevented. The black filter layer 10 prevents light from passing through a gap between the color filters 12 and from being made incident to the adjacent light receiving part 2. The color filters 12 can be arranged without overlapping. A film thickness is made thin and the micro lens 14 is made low in height. The shading of the color filter 12 caused by slanting incident light is reduced and the incident angle characteristic can be improved. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了抑制由光接收部分周围的像素之间的布线区域的反射光产生的闪光引起的颜色的混合和微透镜之间的入射光泄漏到相邻像素的串扰光接收部分的周边，并且防止闪光，并且提高颜色再现性而不会使入射角特性恶化。解决方案：作为光吸收层的黑色滤光层10（防反射层）布置在光接收部分2之间的布线上。即使强光入射到固态图像拾取元件及其一部分上在Cu布线膜上反射，反射光减少。因此，可以防止通过将反射光再次反射在固态图像拾取元件的密封玻璃上并使其入射到固态图像拾取元件而产生的耀斑。黑色滤光层10防止光通过滤色器12之间的间隙并且被入射到相邻的光接收部分2.滤色器12可以不重叠地布置。薄膜厚度变薄，微透镜14的高度变低。由倾斜入射光引起的滤色器12的阴影减小，并且可以提高入射角特性。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010232387A Solid-state imaging element 审中-公开
标题翻译：固态成像元件
公开(公告)号：JP2010232387A
公开(公告)日：2010-10-14
申请号：JP2009077646
申请日：2009-03-26
申请人： Panasonic Corp , パナソニック株式会社
发明人： YOKOYAMA HARUHISA , SAKO HIROSHI , YAMASHITA KAZUHIRO , YASUHIRA MITSUO , HIROFUJI YUICHI
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14623 , H01L27/14627 , H01L27/1464 , H01L27/14656
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging element that prevents blooming. SOLUTION: An MOS-type solid-state imaging element 100 has a plurality of pixels arranged in a matrix, and includes: a semiconductor substrate 130; photodiodes 121 which are formed on the semiconductor substrate 130 and which convert the light emitted from the first main surface of the semiconductor substrate 130 into signal charges; transfer transistors 131 which are formed on the second main surface of the semiconductor substrate 130 and which transfer the signal charges converted by the photodiodes 121; a conductive light-blocking film 162 formed on the boundary between the plurality of pixels on the first main surface of the semiconductor substrate 130; overflow drain regions 134 which are electrically connected to the light-blocking film 162 and formed on the first main surface of the semiconductor substrate 130; and overflow barrier regions 136 which are formed between the overflow drain regions 134 and the photodiodes 121. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供防止起霜的固态成像元件。解决方案：MOS型固态成像元件100具有以矩阵形式布置的多个像素，并且包括：半导体衬底130; 形成在半导体衬底130上并将从半导体衬底130的第一主表面发射的光转换为信号电荷的光电二极管121; 传输晶体管131，其形成在半导体衬底130的第二主表面上，并传送由光电二极管121转换的信号电荷; 形成在半导体衬底130的第一主表面上的多个像素之间的边界上的导电阻挡膜162; 溢出漏极区134，其与遮光膜162电连接并形成在半导体衬底130的第一主表面上; 以及形成在溢流漏极区域134和光电二极管121之间的溢出屏障区域136.权利要求（C）2011，JPO＆INPIT

5. 发明专利

JP2009245986A Solid-state imaging device and method of manufacturing the same 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：JP2009245986A
公开(公告)日：2009-10-22
申请号：JP2008087640
申请日：2008-03-28
申请人： Panasonic Corp , パナソニック株式会社
发明人： YAMASHITA KAZUHIRO
IPC分类号： H01L27/14 , H04N5/335 , H04N5/357 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To suppress color mixture accompanied with diffraction phenomenon which is caused by the reduction of width of an opening corresponding to a light receiving part formed on a diffusion preventive film in a multilayer wiring layer through high pixel.
SOLUTION: The solid-state imaging device includes a light receiving part 2 for photoelectric conversion, a plurality of wiring layers 6, 9 and 12 stacked in peripheral areas of the light receiving part, diffusion preventive films 7, 10 and 13 which are formed on the respective wiring layers to prevent the diffusion of materials of the wiring layers, and interlayer dielectrics 4, 5, 8 and 11 which are provided among each layers of a plurality of the wiring layers. The diffusion preventive films has light receiving openings 18, 19 and 20 corresponding to the light receiving areas of the light receiving part. The thickness of the diffusion preventive films is determined so that a difference between the phase of a light passing through the diffusion preventive film and that of a light passing through the light receiving opening ranges from 90 degrees to 270 degrees.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：抑制伴随着通过高像素在多层布线层中形成在防扩散膜上的受光部分的开口的宽度减小引起的衍射现象的混合。解决方案：固态成像装置包括用于光电转换的光接收部分2，堆叠在光接收部分的周边区域中的多个布线层6,9和12，防扩散膜7,10和13，形成在各个布线层上，以防止布线层的材料的扩散，以及设置在多个布线层的各层之间的层间绝缘膜4,5,8和11。扩散防止膜具有对应于光接收部分的光接收区域的光接收开口18,19和20。确定防扩散膜的厚度，使得通过防扩散膜的光的相位与通过光接收开口的光的相位差在90度至270度之间。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009130305A Solid imaging device 审中-公开
标题翻译：固体成像装置
公开(公告)号：JP2009130305A
公开(公告)日：2009-06-11
申请号：JP2007306677
申请日：2007-11-28
申请人： Panasonic Corp , パナソニック株式会社
发明人： YAMASHITA KAZUHIRO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/3728
摘要： PROBLEM TO BE SOLVED: To provide a solid image sensor that reduces a smear caused by the multiple reflection of light between a light shielding metal film and substrate surface and the diffraction light from the opening of the light shielding metal film, relatively with ease but without deterioration in a characteristics.
SOLUTION: The smear can be reduced by elevating a potential barrier of a read gate 15 and channel separating area 16 on a central portion of a light receiving charge accumulation portion 2 higher than a read gate 15 and channel separating area 16 on a surrounding portion of the light receiving charge accumulation portion 2 without reducing its sensibility and output level.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种固体图像传感器，其减少由遮光金属膜和基板表面之间的多次反射引起的拖尾和来自遮光金属膜的开口的衍射光，相对地容易但不变质的特点。解决方案：通过将读取栅极15和沟道分离区域16的势垒升高到高于读取栅极15的光接收电荷累积部分2的中心部分和通道分离区域16上的通道分离区域16，可以减少污迹。光接收电荷累积部分2的周围部分，而不降低其感光度和输出电平。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009302483A Solid imaging device and method for manufacturing the same 审中-公开
标题翻译：固体成像装置及其制造方法
公开(公告)号：JP2009302483A
公开(公告)日：2009-12-24
申请号：JP2008158436
申请日：2008-06-17
申请人： Panasonic Corp , パナソニック株式会社
发明人： KATSUNO MOTONARI , YAMASHITA KAZUHIRO , SAEKI KOSAKU
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/374
CPC分类号： G02B3/02 , G02B3/0056 , G02B5/045 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14627 , H04N5/2254
摘要： PROBLEM TO BE SOLVED: To provide a solid imaging device that suppresses a variation of sensitivity between pixels. SOLUTION: In the solid imaging device 100 having a plurality of unit pixels 101 disposed in a matrix shape, each of the plurality of the unit pixels 101 includes a photodiode 111 for converting light into an electric signal, a top lens 210 for collecting incident light, and an intra level lens 206 for collecting the incident light collected by the top lens 210 into the photodiode 111. The gravity center 302 of the photodiode 111 is displaced to a first direction from the center 301 of the unit pixel 101. The top lens 210 is formed in an asymmetrical shape so that the gravity center 303 is displaced to the first direction from the center 301 of the unit pixel 101. The intra level lens 206 is formed so that the gravity center 304 is displaced to the first direction from the center 301 of the unit pixel 101. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抑制像素之间的灵敏度变化的固体成像装置。解决方案：在具有以矩阵形状设置的多个单位像素101的固体成像装置100中，多个单位像素101中的每一个包括用于将光转换成电信号的光电二极管111，用于将光转换成电信号的顶部透镜210 收集入射光，以及用于将由顶部透镜210收集的入射光收集到光电二极管111中的级内透镜206.光电二极管111的重心302从单位像素101的中心301移位到第一方向。顶部透镜210形成为不对称的形状，使得重心303从单元像素101的中心301移位到第一方向。内部水平透镜206形成为使得重心304移位到第一方向从单元像素101的中心301。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009289927A Solid-state imaging device and method of manufacturing the same 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：JP2009289927A
公开(公告)日：2009-12-10
申请号：JP2008140112
申请日：2008-05-28
申请人： Panasonic Corp , パナソニック株式会社
发明人： SAEKI KOSAKU , KATSUNO MOTONARI , YAMASHITA KAZUHIRO
IPC分类号： H01L27/14 , H01L31/10 , H04N5/335 , H04N5/365 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14627 , G02B3/0062 , G02B27/40 , H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H04N5/37457
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging device that suppresses variation in sensitivity among pixels.
SOLUTION: The solid-state imaging device 100 has a plurality of unit pixels 101 arrayed in a matrix form, and the plurality of unit pixels 101 each have a photodiode 111 which photoelectrically converts light into an electric signal, a top lens 210 which converges incident light, and an in-layer lens 206 which converges the incident light converged by the top lens 210 on the photodiode 111. The center 302 of gravity of the photodiode 111 shifts in a first direction from the center 301 of a unit pixel 101, the center of the top lens 210 shifts in the first direction of the center 301 of the unit pixel 101, and the center 304 of gravity of the in-layer lens 206 shifts in the first direction from the center 301 of the unit pixel 101.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供抑制像素之间的灵敏度变化的固态成像装置。解决方案：固态成像装置100具有以矩阵形式排列的多个单位像素101，并且多个单位像素101各自具有光电转换为电信号的光电二极管111，顶部透镜210 会聚入射光的聚酰亚胺透镜206和将由顶部透镜210会聚的入射光会聚在光电二极管111上的层内透镜206.光电二极管111的重心中心302从单位像素的中心301向第一方向移动如图101所示，顶部透镜210的中心在单位像素101的中心301的第一方向上移动，层内透镜206的重心的中心304从单位像素的中心301沿第一方向移动（C）2010年，JPO＆INPIT

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