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    • 1. 发明专利
    • Solid-state image pickup device and method of manufacturing the same
    • 固态图像拾取装置及其制造方法
    • JP2012227474A
    • 2012-11-15
    • JP2011096166
    • 2011-04-22
    • Panasonic Corpパナソニック株式会社
    • TSUJI SHOICHIRO
    • H01L27/14G02B5/20
    • H01L27/14621G02B3/0056G02B5/201H01L27/14623H01L27/14627H01L27/14629
    • PROBLEM TO BE SOLVED: To provide an image pickup device that allows suppression of ununiformity of the film thickness of color filters and to provide a method of manufacturing the same.SOLUTION: A solid-state image pickup device comprises: a semiconductor substrate 21; a base layer (25) formed on the semiconductor substrate 21 and in which its top surface equivalent to a pixel region 3 is lower than its top surface equivalent to a peripheral circuit region 5; a plurality of color filters 27 arranged two-dimensionally on the top surface equivalent to the pixel region 3 of the base layer (25); and a partition wall 29 arranged between each of the color filters 27. In a cross section orthogonal to the top surface equivalent to the pixel region 3 of the base layer (25), the occupied area of the partition wall 29 arranged in an outside portion (9) in contact with the peripheral circuit region 5 is smaller than the occupied area of the partition wall 29 arranged in a center portion (11) of the pixel region 3.
    • 要解决的问题:提供一种允许抑制滤色器的膜厚不均匀性并提供其制造方法的图像拾取装置。 解决方案:固态图像拾取装置包括:半导体衬底21; 形成在半导体衬底21上并且其顶表面等于像素区域3的基底层(25)低于与外围电路区域5相当的顶表面; 在与基底层(25)的像素区域3相当的顶面上二维排列的多个滤色器27; 以及布置在每个滤色器27之间的分隔壁29.在与基底层(25)的像素区域3相当的顶表面正交的截面中,分隔壁29的被占据的区域布置在外部 (9)与外围电路区域5接触的面积小于被配置在像素区域3的中心部分(11)上的分隔壁29的占用面积。(C)2013,JPO&INPIT
    • 2. 发明专利
    • Solid state image pickup device
    • 固态图像拾取器件
    • JP2012227478A
    • 2012-11-15
    • JP2011096170
    • 2011-04-22
    • Panasonic Corpパナソニック株式会社
    • TSUJI SHOICHIRO
    • H01L27/14G02B5/20H04N5/225
    • H01L27/14621H01L27/14627H01L27/14629
    • PROBLEM TO BE SOLVED: To provide a solid state image pickup device with a color filter which hardly peels off from partition wall compared to conventional color filter.SOLUTION: The solid state image pickup device includes a semiconductor substrate 10 formed with a photodiode 12 therein; a wiring layer formed over the semiconductor substrate 10 having a laminate structure of an insulation film 20 and wirings 22 and 24; a partition wall 30 formed of an inorganic material, which is vertically formed at a position equivalent to a position between the neighboring photodiodes 12 on the wiring layer; color filters 50 and 52 formed of an inorganic material, which are formed between the neighboring partition walls 30 on the wiring layer; and a contact layer 40 formed of an inorganic material, which is formed between the side face of the partition wall 30 and the color filter 50, 52. The adhesion of the contact layer 40 to the color filters 50 and 52 is stronger than the adhesion of the partition wall 30 to the color filters 50 and 52, and the adhesion of the contact layer 40 to the partition wall 30 is stronger than the adhesion of the color filter 50, 52 to the partition wall 30.
    • 要解决的问题:提供一种具有与常规滤色器相比几乎不从分隔壁剥离的滤色器的固态图像拾取装置。 固态摄像装置包括在其中形成有光电二极管12的半导体衬底10; 形成在具有绝缘膜20和布线22和24的叠层结构的半导体衬底10上的布线层; 由无机材料形成的分隔壁30,其垂直形成在与布线层上的相邻光电二极管12之间的位置相当的位置; 由无机材料形成的滤色器50和52,其形成在布线层上的相邻分隔壁30之间; 以及由分隔壁30的侧面和滤色器50,52之间形成的由无机材料形成的接触层40.接触层40与滤色器50和52的粘附性比粘合力强 的分隔壁30与滤色器50,52的接触面40与分隔壁30的粘接强度比分隔壁30的粘合力强。 C)2013,JPO&INPIT
    • 3. 发明专利
    • Solid imaging element
    • 固体成像元件
    • JP2012010293A
    • 2012-01-12
    • JP2010146914
    • 2010-06-28
    • Panasonic Corpパナソニック株式会社
    • YASUHIRA MITSUOTSUJI SHOICHIRO
    • H04N5/374H01L27/146H04N5/359
    • H01L27/14616H01L27/14614H04N5/3597H04N5/374
    • PROBLEM TO BE SOLVED: To provide an MOS-type solid imaging element having a global electronic shutter capable of restraining a residual image.SOLUTION: A solid imaging element is provided with a plurality of pixel parts 100 aligned two-dimensionally. The pixel part 100 comprises a semiconductor substrate 1, a PD3 formed on the semiconductor substrate 1 and converting incident lights to signal loads by photoelectric transforming, an SD4 formed on the semiconductor substrate 1 and adjacent to the PD3 and temporarily accumulating the signal loads, an FD5 formed on the semiconductor substrate 1 and adjacent to the SD4, a first transfer gate 6 transferring the signal loads from the PD3 to the SD4 on the semiconductor substrate 1, and a second transfer gate 7 formed between the SD4 and the FD5 and on the semiconductor substrate 1 and transferring the signal loads temporarily accumulated in the SD4 to the FD5. The first transfer gate 6 is formed between the PD3 and the SD4 and above the SD4.
    • 要解决的问题:提供具有能够抑制残留图像的全局电子快门的MOS型固体摄像元件。 解决方案:固体成像元件设置有二维对准的多个像素部分100。 像素部分100包括半导体衬底1,形成在半导体衬底1上并通过光电转换将入射光转换为信号负载的PD3,形成在半导体衬底1上并与PD3相邻并临时累积信号负载的SD4 FD5形成在半导体衬底1上并且与SD4相邻,第一传输门6将信号负载从PD3传递到半导体衬底1上的SD4,以及形成在SD4和FD5之间的第二传输门7 半导体衬底1,并将临时累积在SD4中的信号负载传送到FD5。 第一传输门6形成在PD3和SD4之间以及SD4之上。 版权所有(C)2012,JPO&INPIT
    • 4. 发明专利
    • Solid state image pickup device and method of manufacturing the same
    • 固态图像拾取装置及其制造方法
    • JP2012004368A
    • 2012-01-05
    • JP2010138353
    • 2010-06-17
    • Panasonic Corpパナソニック株式会社
    • TSUJI SHOICHIROYAMASHITA KAZUHIRO
    • H01L27/14H04N5/369H04N9/07
    • H01L27/14685H01L27/14621H01L27/14627H01L27/14687
    • PROBLEM TO BE SOLVED: To provide a solid state image pickup device and a method of manufacturing the same that can enhance uniformity of sensitivity and reduce chip size.SOLUTION: In a solid state image pickup device in which a pixel region 103 and a peripheral circuit region 102 for performing driving control of the pixel region and signal processing on an image pickup signal are provided, a multilayered wiring layer 121 comprising wiring of plural layers and an interlayer film are provided on a semiconductor substrate, an optical waveguide 107 is provided in an area at least corresponding to the pixel region between the multilayered wiring layers, and a waveguide member for controlling incident light to a photoelectric conversion element and an optical structure member comprising at least one or more of a color filter member 114, a lens member 115 and a flattening member 116 are provided in the region at least corresponding to the pixel region on the multilayered wiring layer and in a solid state image pickup device in which a waveguide member and an optical structure member comprising at least one or more of a color filter member, a lens member and a flattening member are provided at a part on the peripheral circuit, a groove in which the waveguide member on the image pickup element region portion is omitted is provided.
    • 要解决的问题:提供一种固态图像拾取装置及其制造方法,其可以增强灵敏度的均匀性并减小芯片尺寸。 解决方案:在设置用于执行像素区域的驱动控制的像素区域103和外围电路区域102以及对摄像信号进行信号处理的固态图像拾取装置中,包括布线的多层布线层121 并且在半导体基板上设置有层间膜,在至少对应于多层布线层之间的像素区域的区域和用于控制入射到光电转换元件的入射光的波导部件的区域中设置有光波导107, 在至少对应于多层布线层上的像素区域和固态图像拾取器的区域中设置包括滤色器构件114,透镜构件115和平坦化构件116中的至少一个的光学结构构件 装置,其中波导构件和光学构件构件包括滤色器构件,透镜构件a中的至少一个或多个 在外围电路的一部分设置有平坦化构件,设置省略了摄像元件区域部分上的波导构件的槽。 版权所有(C)2012,JPO&INPIT