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1. 发明专利

JP2000216491A DISTRIBUTION FEEDBACK RIDGE TYPE SEMICONDUCTOR LASER AND ITS MANUFACTURE 失效
公开(公告)号：JP2000216491A
公开(公告)日：2000-08-04
申请号：JP1545599
申请日：1999-01-25
申请人： PIONEER ELECTRONIC CORP
发明人： TAKEI KIYOSHI , CHIN NO , WATABE YOSHIAKI , CHIKUMA KIYOBUMI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/12 , H01S5/22 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To avoid the unneeded light absorption due to a metal electrode on a grating by forming an insulation layer on the entire surface of the grating, at the same time eliminating one portion of the flat parts at both sides from the insulation layer for exposing the grating, and forming a bus electrode on it by crossing. SOLUTION: An insulation layer 6 is formed on the entire surface of a plurality of metal stripes 7 on both parts on the flat part of a ridge stripe, and the plurality of metal stripes 7 are buried into the insulation layer 6. Then, a bus electrode 10 is connected onto the plurality of metal stripes 7 excluding the flat upper surface part of the ridge stripe and an area on grating by crossing. With this configuration, since the insulation layer 6 that is transparent to oscillation light exists on the plurality of metal stripes 7, light loss is eliminated and light absorption on an upper portion of the upper surface of grating can be avoided without changing the effect of distribution feedback due to the grating.

2. 发明专利

JPH11214793A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER 失效
公开(公告)号：JPH11214793A
公开(公告)日：1999-08-06
申请号：JP3054698
申请日：1998-01-28
申请人： PIONEER ELECTRONIC CORP
发明人： CHIN NOU , TAKEI KIYOSHI , WATABE YOSHIAKI , CHIKUMA KIYOBUMI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/22 , H01S5/223 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a distributed feedback (DFB) semiconductor laser having which is simple in structure and capable of making wavelength variable. SOLUTION: A distributed feedback semiconductor layer is provided with a semiconductor substrate 1, an active layer 4 formed on the substrate 1, and a ridge stripe formed on the active layer 4, where a periodic structure extends in a direction in which the ridge stripe extends. In this case, at least two p-type electrodes are provided to a plane in parallel with the active layer 4 of the ridge stripe and the growth layer of layers which form the ridge stripe, an n-type electrode is provided to the underside of the substrate 1, and the ridge stripe is, at least possessed of parallel sides whose widths vertical to the direction in which it extends are set different from each other.

3. 发明专利

JPH08181381A RESONATOR FORMING METHOD OF SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH08181381A
公开(公告)日：1996-07-12
申请号：JP32013294
申请日：1994-12-22
申请人： PIONEER ELECTRONIC CORP
发明人： WATABE YOSHIAKI , MIYAGUCHI SATOSHI , AMANO HIROSHI , AKASAKI ISAMU
IPC分类号： H01S5/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/323 , H01S3/18
摘要： PURPOSE: To provide a resonator forming method of a semiconductor laser device which can constitute a resonator when the crystal of a substrate and of the laser structure on the substrate has no cleavage properties. CONSTITUTION: The method contains the following: a protecting process wherein semiconductor laser structure which is formed on a substrate and has an end surface for forming a resonator is buried in uncured resin 5, or further the substrate is clamped together with the semiconductor laser structure by a dummy substrate 4, and the resin is cured, a polishing process wherein the end surface for forming the resonator is polished together with the cured resin and the dummy substrate, a process for forming a thin film on the polished end surface, and a process for eliminating the dummy substrate and the resin. Excepting the polished end surface for forming the resonator, the side surface of a laser waveguide and an electrode are buried in resin. In this state, a specified optical coat thin film is formed on the end surface, and then the surrounding resin is eliminated. Thereby an end surface mirror coating free from permeation of the optical coat into the waveguide 2 side surface can be formed.

4. 发明专利

JP2000269588A MANUFACTURE OF SEMICONDUCTOR LASER MODULE 失效
公开(公告)号：JP2000269588A
公开(公告)日：2000-09-29
申请号：JP7182899
申请日：1999-03-17
申请人： PIONEER ELECTRONIC CORP
发明人： CHIN NO , TAKEI KIYOSHI , WATABE YOSHIAKI , CHIKUMA KIYOBUMI
IPC分类号： G02B6/26 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/10
摘要： PROBLEM TO BE SOLVED: To properly position an optical fiber by forming a supporting groove part which supports an optical fiber in a substrate comprising an active layer between clad layers and forming an electrode in a substrate surface in an opposite part opposite to the supporting groove part. SOLUTION: An optical fiber supporting groove part 64 is formed in a substrate 30 comprising an active layer between a first clad layer 31 with specified crystal orientation consisting of n-type InP which is subjected to formation treatment of an insulation matter and a second clad layer 33 wherein InGaAsP is subjected to crystal growth by reactive ionization etching treatment to a specified depth. After a mask formed in an upper surface between a laser light emission part 61 and an insulation matter 50 formed in a side surface thereof is removed and an electrode contact layer 35 is exposed in an upper surface of the laser light emission part 61, an electrode is formed by depositing an electrode film and a manufacturing process of a semiconductor laser module is finished.

5. 发明专利

JP2000131542A OPTICAL TRANSMISSION AND RECEPTION MODULE 失效
公开(公告)号：JP2000131542A
公开(公告)日：2000-05-12
申请号：JP30735398
申请日：1998-10-28
申请人： PIONEER ELECTRONIC CORP
发明人： WATABE YOSHIAKI , TAKEI KIYOSHI , CHIN NO , CHIKUMA KIYOBUMI
IPC分类号： G02B6/12 , G02B6/293 , G02B6/32 , G02B6/34 , G02B6/42 , H04J14/02
摘要： PROBLEM TO BE SOLVED: To obtain an optical transmission and reception module which has a small loss by providing a dispersing and converging optical system composed of a diffraction grating which converges a light signal of 1st wavelength band emitted by a transmission part in the internal end part of an input/output waveguide. SOLUTION: The module has an input/output waveguide 20 which has an external end part 20a and an internal end part 20b, i.e., a common port, the dispersing and converging optical system comprising a reflection type plane diffraction grating 50 and condenser lenses 60, 70, and 80, a reception part 8 which receives the light signal fo the 1st wavelength band, and an output waveguide 30 having an external end part 30a for outputting a light signal of 2nd wavelength band and an internal end part 30b, i.e., a 1.55 output port. Then, the optical transmission and reception module of simple constitution of the diffraction grating 50 larger than beam spots of the light signals of the two wavelength bands and the lenses 60 to 80 branches superposed light signals. Thus, the 2nd wavelength band is outputted to the 1.55 output port 30 as it is and the light signal of the 1st wavelength band is received at the common port 20 and sent again.

6. 发明专利

JPH10200203A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JPH10200203A
公开(公告)日：1998-07-31
申请号：JP35888796
申请日：1996-12-27
申请人： PIONEER ELECTRONIC CORP
发明人： WATABE YOSHIAKI , TAKEI KIYOSHI , CHIN NOU , CHIKUMA KIYOBUMI
IPC分类号： H01L23/38 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To reduce the size by incorporating a Peltier effect element in a semiconductor laser element to directly cool heating parts. SOLUTION: A semiconductor laser element 120 comprises a p-clad layer 102, a guide layer 103, an active layer 104, a guide layer 105, an n-clad layer 106, a contact layer 107, and an emission driving electrode 108 on a p-type substrate 101. The n-clad layer 106 has ridges at the center and both ends on which a common electrode 109a and electrodes 109b, 109c to be driving anodes of a Peltier effect element are provided. A voltage V1 is applied to the electrode 108 and the common electrode 109a to drive the semiconductor laser element 120. A voltage V2 is applied to the common electrode 109a and electrodes 109b, 109c to flow a current I2 from the electrodes 109b, 109c to the common electrode 109a, resulting in a cooling action at the region of the common electrode 109a and heating action at the regions of the electrodes 109b, 109c due to the Peltier effect, thereby efficiently cooling a light emission part.

7. 发明专利

JP2000244055A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER ELEMENT AND FABRICATION THEREOF 失效
公开(公告)号：JP2000244055A
公开(公告)日：2000-09-08
申请号：JP3828199
申请日：1999-02-17
申请人： PIONEER ELECTRONIC CORP
发明人： TAKEI KIYOSHI , CHIN NO , WATABE YOSHIAKI , CHIKUMA KIYOBUMI
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/12 , H01S5/20 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To fabricate a distributed feedback semiconductor laser element easily through a simple process by a structure wherein an insulating layer has a through groove reaching a grating layer along the resonator forming direction of the laser element and an electrode layer abuts on the grating layer and a clad layer. SOLUTION: A lower clad layer 2 of n-InP, a lower guide layer 3, an upper clad layer 6, and the like, are laminated sequentially on a substrate 1. A contact layer 7 of InGaAs forms a grating layer 7a on the upper clad layer 6 and the grating layer 7a has a periodic structure in the direction where a plurality of ridges having substantially rectangular cross-section form the resonator of a laser. Two inorganic protective stripe layers 8 of silicide, e.g. water glass, having a through groove reaching the grating layer 7a are arranged on the grating layer 7a in parallel with the forming direction of resonator. At the through groove part, a metallic material composing an electrode layer 20 advances through the grating layer 7a and a part of the electrode layer 20 abuts on the upper clad layer 6.

8. 发明专利

JP2000131543A OPTICAL TRANSMISSION AND RECEPTION MODULE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000131543A
公开(公告)日：2000-05-12
申请号：JP30365198
申请日：1998-10-26
申请人： PIONEER ELECTRONIC CORP
发明人： TAKEI KIYOSHI , WATABE YOSHIAKI , CHIN NO , CHIKUMA KIYOBUMI
IPC分类号： G02B6/12 , G02B6/125 , G02B6/34
摘要： PROBLEM TO BE SOLVED: To obtain an optical transmission and reception module which is easily manufactured and has a small light loss by equipping the module with a 1st cleavable crystal substrate which has input and output waveguides and a 2nd cleavable crystal substrate which has a receiving waveguide having a transmission and reception waveguide. SOLUTION: A planar light wave circuit 100 is composed of the 1st substrate 101 which has the input and output waveguides 20 and 30 and the 2nd substrate 102 which has a transmitting and receiving waveguide 20a extending coaxially from the input/output waveguide 20 and has an interference filter 50 formed between cleavage surfaces of the 1st and 2nd substrates 101 and 102 in contact. In this case, the input and output waveguides 20 and 30 of the 1st substrate 101 are formed by extending at the same angle from the normals of the cleavage surfaces and crossing each other at a position 15 of intersection with the cleavage surface 101a. Then, the interference filter which contacts the cleavage surface at the intersection position 15 of the input/output waveguides reflects light of a 1.55 μm band from the input/output waveguide 20 to the output waveguide 30 and guides it.

9. 发明专利

JP2001284712A DISTRIBUTION FEEDBACK RIDGE TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JP2001284712A
公开(公告)日：2001-10-12
申请号：JP2000091734
申请日：2000-03-29
申请人： PIONEER ELECTRONIC CORP
发明人： WATABE YOSHIAKI , CHIN NO , TAKEI KIYOSHI , CHIKUMA KIYOBUMI
IPC分类号： H01S5/12 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a distribution feedback ridge type semiconductor laser by using a refractive index coupling and the gain coupling. SOLUTION: A distribution feedback ridge type semiconductor laser includes a semiconductor active layer 10, a ridge consisting of a clad layer and a contact layer projected on the semiconductor active layer and laminated mutually, and a grating consisted of a plurality of grating grooves 20 extending from each side face on both sides of the ridge to the semiconductor active layer and having a periodic structure in an extending direction of the ridge. In addition, an absorbing layer 40 for absorbing excitation light is provided in the adjoining grating groove in the distribution feedback ridge type semiconductor laser.

10. 发明专利

JPH10275959A MANUFACTURE OF DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER ELEMENT AND DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH10275959A
公开(公告)日：1998-10-13
申请号：JP9474397
申请日：1997-03-28
申请人： PIONEER ELECTRONIC CORP
发明人： TAKEI KIYOSHI , WATABE YOSHIAKI , CHIN NOU , CHIKUMA KIYOBUMI
IPC分类号： H01L21/027 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To enhance the production efficiency of a distributed feedback semiconductor laser element by a method wherein gratings are formed on a laser substrate, an etching is performed on the laser substrate formed with the gratings to form ridges in the directions of stripes and electrodes are formed. SOLUTION: Prescribed gratings are exposed and developed on a laser substrate coated with a resist by a two-luminous flux interference exposure method or the like to obtain the gratings, the gratings are transferred to a semiconductor layer and after a mask consisting of an oxide film, for ridge use is formed, the substrate is processed into a strip pattern and ridges and formed in the directions of stripes. Then, the mask consisting of the oxide film, for ridge formation use is removed to obtain a structure, wherein the gratings 109 are formed on a clad layer on the upper surfaces, both sidewalls and both sides of the ridges 110. An insulating protective film 112, such as a water-glass film or a polymide film, is buried in the upper parts of the gratings, the upper surfaces of the ridges 110 are made to expose by a dry etching, electrodes 113 are formed, the laser substrate is cleaved and a distributed feedback semiconductor laser element is completed. The productivity of the laser element can be greatly enhanced.

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