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1. 发明专利

JP2013211574A Plasma processing apparatus and electrode plate for plasma processing apparatus 有权
标题翻译：等离子体加工设备等离子体处理设备和电极板
公开(公告)号：JP2013211574A
公开(公告)日：2013-10-10
申请号：JP2013100660
申请日：2013-05-10
申请人： Okutekku:Kk , 株式会社オクテック , Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OKUMURA KATSUYA , HIMORI SHINJI , NAGASEKI KAZUYA , MATSUMARU HIROKI , MATSUYAMA SHOICHIRO , TAKAHASHI TOSHIKI
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To efficiently level plasma density by a plasma processing apparatus.SOLUTION: A plasma processing apparatus is provided with a dielectric 90 having a cavity 104, for example, on a main surface side in an upper electrode 38. Then the dielectric 90 is made thicker at a center portion of an upper electrode 39 than at an edge portion and a fluid dielectric substance NZ is put in the cavity of the dielectric 90 so that the substance NZ can be put out. Preferably, for example, a plurality of pipes 106, 108 may be connected to difference places (for example, a center portion and an edge portion) of the cavity 104 as ports for putting the dielectric fluid body NZ in and out of the cavity 104.
摘要翻译：要解决的问题：通过等离子体处理装置有效地提高等离子体密度。解决方案：等离子体处理装置设置有例如在上电极38的主表面侧上具有空腔104的电介质90.然后，电介质 90在上电极39的中心部比在边缘部处更厚，并且将流体介电物质NZ放入电介质90的空腔中，使得物质NZ可以被放出。优选地，例如，多个管106,108可连接到空腔104的不同位置（例如，中心部分和边缘部分），作为用于将介质流体主体NZ放入和流出空腔104的端口。

2. 发明专利

JP2004363552A Plasma treatment apparatus, electrode plate for plasma treatment apparatus and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置的电极板和电极板的制造方法
公开(公告)号：JP2004363552A
公开(公告)日：2004-12-24
申请号：JP2004025007
申请日：2004-02-02
申请人： Okutekku:Kk , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社オクテック
发明人： OKUMURA KATSUYA , HIMORI SHINJI , NAGASEKI KAZUYA , MATSUMARU HIROKI , MATSUYAMA SHOICHIRO , TAKAHASHI TOSHIKI
IPC分类号： H05H1/46 , B01J19/08 , C23C14/00 , C23F4/00 , C25D17/10 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： PROBLEM TO BE SOLVED: To efficiently uniformalize plasma density in a plasma treatment apparatus. SOLUTION: A projecting part 70 is protruded toward an upper electrode side, namely, toward a plasma side on the principal surface of a susceptor 12 electrically coupled with plasma with lower impedance than the bottom face 12a of the principal surface. Therefore, high-frequency power which is carried by a high frequency current flowing on a top face layer of the principal surface of the susceptor 12 is mainly discharged from the top face of the projecting part 70 to the plasma. In order to increase a ratio Z 12a /Z 70 between the impedance Z 70 of the projecting part 70 and the impedance Z 12a of the bottom face 12a on the principal surface of the susceptor 12, a dielectric 72 is provided around the projecting part 70 (on the bottom face 12a). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了有效地使等离子体处理装置中的等离子体密度均匀化。解决方案：突出部分70朝向上电极侧突出，即朝向与主表面的底面12a具有较低阻抗的等离子体电耦合的基座12的主表面上的等离子体侧。因此，在基座12的主面的顶面上流动的高频电流承载的高频电力主要从突出部70的顶面排出到等离子体。为了增加突出部分70的阻抗Z 70 与阻抗Z 12a之间的比值Z 12a / Z 70 在基座12的主表面上的底面12a的，在突出部70（底面12a）周围设置电介质72。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2010135813A Plasma processing apparatus and electrode plate therefor 有权
标题翻译：等离子体处理装置和电极板
公开(公告)号：JP2010135813A
公开(公告)日：2010-06-17
申请号：JP2010004960
申请日：2010-01-13
申请人： Okutekku:Kk , Tokyo Electron Ltd , 東京エレクトロン株式会社 , 株式会社オクテック
发明人： OKUMURA KATSUYA , HIMORI SHINJI , NAGASEKI KAZUYA , MATSUMARU HIROKI , MATSUYAMA SHOICHIRO , TAKAHASHI TOSHIKI
IPC分类号： H01L21/3065 , C23C14/34 , C23C16/509 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of effectively attaining uniformity in plasma density. SOLUTION: A dielectric material 90 disposed on the main surface of an electrode 38 has a flat first portion formed in the center of the electrode 38 so as to be in concentric configuration with a substrate in a processing vessel, with a first diameter larger than or equal to 1/10 of the gauge of the substrate and a first constant thickness, and a flat second portion formed in the side more outside than the first portion, with a second diameter larger than or equal to the first diameter and a second constant thickness thinner than the first constant thickness. The dielectric material has a thickness profile assimilated to an ideal thickness profile to perform a uniform processing operation to the workpiece. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够有效地获得等离子体密度的均匀性的等离子体处理装置。解决方案：设置在电极38的主表面上的电介质材料90具有平坦的第一部分，其形成在电极38的中心，以便与处理容器中的基板同心配置，第一直径大于或等于基板的规格的1/10和第一恒定厚度，以及形成在第一部分的外侧的平坦的第二部分，具有大于或等于第一直径的第二直径和第二恒定厚度比第一恒定厚度薄。电介质材料具有被吸收到理想厚度分布的厚度分布，以对工件进行均匀的加工操作。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2004342703A Device and method for plasma treatment 有权
公开(公告)号：JP2004342703A
公开(公告)日：2004-12-02
申请号：JP2003135092
申请日：2003-05-13
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HIMORI SHINJI , NAGASEKI KAZUYA , HAYASHI DAISUKE
IPC分类号： H05H1/46 , B01J3/00 , B01J19/08 , C23F4/00 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a device and method for a plasma treatment by which various kinds of plasma treatments can be made by easily controlling the state of the plasma in accordance with the treatment without extending the footprint even when the diameter of a vacuum chamber is increased. SOLUTION: In the vacuum chamber 1, a placing base 2 is provided for placing a semiconductor wafer W. Around the placing base 2, an annularly formed exhaust ring 16 is provided. Exhaust paths 17 composed of many circular holes etc., are formed in the exhaust ring 16 and an exhaust system 15 evacuates the vacuum chamber 1 to a vacuum through the exhaust paths 17. The exhaust ring 16 is connected to a driving mechanism 18 and constituted so that the ring 16 may be moved freely in the vertical direction. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2008251854A Plasma processor 有权
标题翻译：等离子体处理器
公开(公告)号：JP2008251854A
公开(公告)日：2008-10-16
申请号：JP2007091691
申请日：2007-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAHASHI SHUICHI , MATSUMARU HIROKI , NAKAO NOBUTAKA , KOMATSU KENJI
IPC分类号： H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H02N13/00 , Y10T279/23
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor which can adjust a temperature of a fringe of a wafer easily. SOLUTION: In the plasma processor 1, a board W is placed on a placing tray 11 in a processing chamber 10, a processing gas fed into the processing chamber 10 is ionized, and the board W is plasma-processed. The placing tray 11 comprises: a placing tray main body 12 which adjusts a temperature to a predetermined temperature; and an electrostatic chuck 13 disposed above the placing tray main body 12 for chucking the board W. A first heat conducting gas diffusion region 47 disposed at the center and a second heat conducting gas diffusion region 48 disposed at the fringe are formed on an upper face of the electrostatic chuck 13, and the placing tray 11 further comprises: a first heat conducting gas feeder 51 for feeding a heat conducting gas to the first heat conducting gas diffusion region 47; and a second heat conducting gas feeder 52 for feeding the heat conducting gas to the second heat conducting gas diffusion region 48. A volume ratio of the second heat conducting gas diffusion region 48 to the first heat conducting gas diffusion region 47 is equal to or less than 0.1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供可以容易地调节晶片的边缘的温度的等离子体处理器。解决方案：在等离子体处理器1中，将板W放置在处理室10中的放置托盘11上，供给到处理室10中的处理气体被离子化，并且板W被等离子体处理。放置托盘11包括：将温度调节到预定温度的放置托盘主体12; 以及设置在放置盘主体12上方用于夹持板W的静电卡盘13.设置在中心的第一导热气体扩散区域47和设置在边缘处的第二导热气体扩散区域48形成在上表面并且放置托盘11还包括：用于将导热气体供给到第一导热气体扩散区域47的第一导热气体供给器51; 以及第二导热气体供给器52，用于将导热气体供给到第二导热气体扩散区域48.第二导热气体扩散区域48与第一导热气体扩散区域47的体积比等于或等于比0.1。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2013042145A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2013042145A
公开(公告)日：2013-02-28
申请号：JP2012193364
申请日：2012-09-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TAKAHASHI SHUICHI , MATSUMARU HIROKI , NAKAO NOBUTAKA , KOMATSU KENJI
IPC分类号： H01L21/3065 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which easily adjusts a temperature of a peripheral part of a wafer.SOLUTION: A placement base 11 on which a substrate W to be subject to plasma processing is placed comprises: a placement base body 12 temperature-adjusted to a predetermined temperature; and an electrostatic chuck 13 placed on the placement base body 12 and used for attracting the substrate W. On an upper surface of the electrostatic chuck 13, a first heat transmission gas diffusion region 47 disposed at a center of the upper surface, and a second heat transmission gas diffusion region 48 disposed at a peripheral part are formed. A plasma processing apparatus includes a first heat transmission gas supply part 51 supplying a heat transmission gas to the first heat transmission gas diffusion region 47 and a second heat transmission gas supply part 52 supplying the heat transmission gas to the second heat transmission gas diffusion region 48. Cooling performance is arbitrarily set and separately controlled for the first heat transmission gas diffusion region 47 and the second heat transmission gas diffusion region 48. The second heat transmission gas diffusion region 48 is an annular recessed part formed at the peripheral part of the upper surface of the electrostatic chuck 13.
摘要翻译：要解决的问题：提供一种容易调节晶片的周边部分的温度的等离子体处理装置。
解决方案：放置基板11，其上放置待经受等离子体处理的基板W包括：温度调节到预定温度的放置基体12; 以及放置在放置基体12上并用于吸引基板W的静电卡盘13.在静电卡盘13的上表面上，设置在上表面的中心的第一透热气体扩散区域47，形成设置在周边部的传热气体扩散区域48。等离子体处理装置包括向第一传热气体扩散区域47供给传热气体的第一传热气体供给部51和向第二传热气体扩散区域48供给传热气体的第二传热气体供给部52 对于第一传热气体扩散区域47和第二传热气体扩散区域48，任意设定和分别控制冷却性能。第二传热气体扩散区域48是形成在上表面的周边部分的环形凹部的静电卡盘13.版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2008251676A Plasma treatment method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：JP2008251676A
公开(公告)日：2008-10-16
申请号：JP2007088664
申请日：2007-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUMARU HIROKI , NAKAO NOBUTAKA , KOMATSU KENJI , TAKAHASHI SHUICHI
IPC分类号： H01L21/3065 , H01L21/683
CPC分类号： H01L21/6833 , H01J37/32009 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment method that suppresses the accumulation of residual charges on a dielectric layer after a plasma treatment. SOLUTION: The plasma treatment method includes a dc voltage applying step of applying a dc voltage having a positive or negative polarity to an HV (High Voltage) electrode 20 of an electrostatic chuck 19 to be able to suck and hold a workpiece board, and a polarity changeover step of changing the polarity of the dc voltage applied to the HV electrode 20 of the electrostatic chuck 19 to the opposite polarity during a plasma treatment from a start to and end of the application of high-frequency power by high-frequency power sources 13 and 43. By changing the polarity of the dc voltage applied to the HV electrode 20 during the plasma treatment on the workpiece board, residual charges accumulated on the dielectric layer are eliminated during the plasma treatment. This reduces the residual charges accumulated on the dielectric layer during the plasma treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供等离子体处理之后抑制电介质层上的残留电荷积聚的等离子体处理方法。解决方案：等离子体处理方法包括直流电压施加步骤，将静电卡盘19的HV（高电压）电极20施加具有正或负极性的直流电压，以能够吸住和保持工件板以及极性切换步骤，通过高频功率的施加开始到结束，在等离子体处理期间将施加到静电卡盘19的HV电极20的直流电压的极性改变为相反极性，通过改变在等离子体处理期间对工件板施加到HV电极20的直流电压的极性，在等离子体处理期间消除了累积在电介质层上的残留电荷。这降低了等离子体处理期间在电介质层上累积的残余电荷。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2015012249A プラズマエッチング方法及びプラズマエッチング装置有权
标题翻译：等离子体蚀刻的方法和装置
公开(公告)号：JP2015012249A
公开(公告)日：2015-01-19
申请号：JP2013138558
申请日：2013-07-02
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： MATSUMARU HIROKI , SHIMODA MANABU , KANO MICHIHIRO
IPC分类号： H01L21/3065 , H05H1/46
摘要：【課題】シリコン膜を含む被エッチング膜のエッチング性能を向上させる。【解決手段】第1の電極と被処理体を載置する第2の電極とを有する処理室内にて被処理体をプラズマエッチングする方法であって、前記第1の電極又は前記第2の電極のいずれかに第1の高周波電力を印加し、前記第2の電極に第2の高周波電力を印加し、前記処理室内に臭化水素ガスHBrと酸素ガスO2とフッ素系ガスとを含む処理ガスを供給し、前記処理ガスから生成されたプラズマにより被処理体に形成された少なくともシリコン膜を含む被エッチング膜を所望のマスクパターンにエッチングするステップを有し、前記エッチングするステップでは、少なくとも前記第2の高周波電力を間欠的に印加するプラズマエッチング方法が提供される。【選択図】図4
摘要翻译：要解决的问题：提供一种用于等离子体蚀刻的方法和装置，其能够提高包含硅膜的待蚀刻膜的蚀刻性能。解决方案：提供了一种用于等离子体蚀刻待处理物体的方法，处理室具有放置待加工物体的第一电极和第二电极。该方法包括以下步骤：向第一电极或第二电极中的任一个施加第一高频功率; 向所述第二电极施加第二高频电力; 将含有溴化氢气体HBr，氧气O和氟系气体的处理气体供给到处理室内; 并且通过使用从处理气体产生的等离子体将至少包含形成在待处理对象物上的硅膜蚀刻成所需的掩模图案。在蚀刻步骤中，至少间歇地施加第二高频功率。

9. 发明专利

JP2006186323A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2006186323A
公开(公告)日：2006-07-13
申请号：JP2005330251
申请日：2005-11-15
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIMORI SHINJI , IMAI NORIAKI , HORIGUCHI KATSUMI , NEZU TAKAAKI , MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HAYAMIZU TOSHIYASU , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA , SUGIYASU YOSHIKAZU
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of capacity coupling type capable of forming uniform plasma efficiently, with a high uniformity within field of plasma treatment, and hardly causing charge up damage. SOLUTION: A plasma processing apparatus of capacity coupling type 100 comprises a chamber 1 held in vacuum atmosphere; a first and a second electrodes 2, 18 one side of which holds a processed substrate W by being arranged to face each other inside the chamber 1; a plasma generating arrangement 10 generating a plasma of processing gas, by forming high frequency field between the first and the second electrodes 2, 18; and a component 25 grounded in direct current by being arranged at an outside location of the processed substrate W in a plasma generating region R in the chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI

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