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1. 发明专利

JPS60165265A THERMAL HEAD 失效
公开(公告)号：JPS60165265A
公开(公告)日：1985-08-28
申请号：JP2050684
申请日：1984-02-07
申请人： OKI ELECTRIC IND CO LTD , NIPPON TELEGRAPH & TELEPHONE
发明人： ARAKI KENICHI , SHIBATA SUSUMU , NIHEI MASAYUKI , NOZAWA TOSHINORI
IPC分类号： H01L49/00 , B41J2/335 , H01L49/02
摘要： PURPOSE:To enable the manufacture simply with a greater yield by arranging a conductive layer in an Al single-layer structure or a multi-layer structure comprising an Al single layer and a conductive ground layer in a thermal head having a heat generating body made of a Zr-N thin film and a conductive layer. CONSTITUTION:This thermal head has a single-layer structure of an Al single layer 8 as a conductive layer electrically contacting a heat generating body 2, being a Zr-N resistor thin film. Because of such a layer structure of the thermal head, there is no Au layer such as electrically contacting the Zr-N resistor thin film 2, hence causing no sharp oxidation at the contact part between the Al layer and the resistor thin layer 2 during the high temperature heat treatment. Thus, this contact part will not be electrically defective in the conduction thereby providing a thermal head with a required conductive characteristic along with a greater yield in the manufacture.

2. 发明专利

JPH03296015A LIGHT CONTROL ELEMENT AND PRODUCTION THEREOF 失效
公开(公告)号：JPH03296015A
公开(公告)日：1991-12-26
申请号：JP9995590
申请日：1990-04-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUZUKI TOSHIO , JUMONJI HIROMICHI , NOZAWA TOSHINORI
IPC分类号： G02F1/035
摘要： PURPOSE:To prevent the generation of burring and peeling on a chip surface by providing grooves for cutting over the entire part of the surface of a substrate for shielding electrodes and forming a metallic conductor layer on the substrate, then cutting the part of the working grooves. CONSTITUTION:The grooves 10 for cutting are previously formed to enclose the respective recessed parts of the substrate 8 for shielding formed with the plural recessed parts 8a for forming an overlay layer 6 on the surface and the metallic conductor layer 7 is formed on the surface of the substrate 8; further, the substrate 8 is cut to chips by utilizing the grooves to obtain the shielding electrodes 9. The burring and peeling generated when the continuous shielding electrode material is cut to the chips are eventually taken to the inner side of the working grooves 10 for cutting. The surface of the chips having the recessed parts 7a of the shielding electrodes 9 in tight contact with the grounding electrodes of the optical device is not affected by the working. The working accuracy of the overlay layer 6 and the electrical characteristics of the device are improved in this way.

3. 发明专利

JPH03229213A OPTICAL CONTROL ELEMENT 失效
公开(公告)号：JPH03229213A
公开(公告)日：1991-10-11
申请号：JP2220790
申请日：1990-02-02
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NOZAWA TOSHINORI , KONO KENJI , JUMONJI HIROMICHI , SUZUKI TOSHIO
IPC分类号： G02F1/035
摘要： PURPOSE:To obtain the speed matching type high-speed and wide-band optical control element which relieves the band sine wave occurring in an increase in microwave loss by constituting a buffer layer of a material having the dielec tric constant lower than the dielectric constant of silicon dioxide. CONSTITUTION:the material having the dielectric constant lower than the dielectric constant of the silicon dioxide (SiO2:specific dielectric constant epsilon 3.9), for example, a resin such as 'Teflon(R)' resin (specific dielectric constant epsilon 1.0) is formed to =50GHz is realized.

4. 发明专利

JPH0251123A OPTICAL MODULATOR 失效
公开(公告)号：JPH0251123A
公开(公告)日：1990-02-21
申请号：JP20149188
申请日：1988-08-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KONO KENJI , KITO TSUTOMU , NOZAWA TOSHINORI , YANAGIBASHI MITSUAKI
IPC分类号： G02B6/12 , G02F1/03 , G02F1/035
摘要： PURPOSE:To suppress an increase in driving electric power and to enable fast, wide-band optical modulation by nearly equalizing the width of a center electrode to that of an optical waveguide and increasing the thickness of a buffer layer. CONSTITUTION:The thickness D of the buffer layer 2 is so set that the microwave effective refractive index of a substrate to a microwave signal for modulation applied to a coplanar waveguide electrode is close to the effective refractive index to light propagated in the optical waveguide 2. The width 2W of the center electrode 4 is nearly equal to the width of the optical waveguide 2 and the optical waveguide 2 is arranged below the center electrode 2. Therefore, even when the thickness D of the buffer layer is increased, deterioration in electric field intensity is suppressed small. Consequently, while the increase in the driving electric power of the microwave signal for modulation is suppressed small, the fast optical modulation is enabled.

5. 发明专利

JPH03229214A OPTICAL MODULATION ELEMENT 失效
公开(公告)号：JPH03229214A
公开(公告)日：1991-10-11
申请号：JP2220890
申请日：1990-02-02
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KONO KENJI , NOZAWA TOSHINORI , JUMONJI HIROMICHI , NOGUCHI KAZUTO , KITO TSUTOMU
IPC分类号： G02F1/035
摘要： PURPOSE:To remove a band limitation due to an increase in microwave propagation loss, and a band limitation resulting from that a microwave effective refractive index does not decrease by arranging a microwave electrode so that the electrodes is not brought into contact with a substrate. CONSTITUTION:The part of the substrate which is at least very close to the microwave electrode 7 is digged to reduce the substrate thickness and form the part of the substrate including an optical waveguide 2 in a projection shape, so that a thick buffer layer 3 which has a low dielectric constant is arranged right below the electrode 7. Therefore, lines of electric force connecting a center electrode 4 and an earth electrode 5 sense the thick buffer layer 3 with the low dielectric constant, so the microwave effective refractive index is reducible as well as a case wherein the buffer layer 3 is uniformly thick. The depth from the border surface between air and the buffer layer 3 is made small as compared with a case wherein the buffer layer 3 is uniformly thick. Consequently, a driving voltage is reducible while the speed of a microwave and light are matched with each other.

6. 发明专利

JPH02230218A OPTICAL SWITCH 失效
公开(公告)号：JPH02230218A
公开(公告)日：1990-09-12
申请号：JP5006589
申请日：1989-03-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MIYAZAWA HIROSHI , MITOMI OSAMU , NOZAWA TOSHINORI , JUMONJI HIROMICHI
IPC分类号： G02F1/313
摘要： PURPOSE:To enable fast switching operation with a low driving voltage by setting a propagation distance corresponding to the 1/2 wavelength of a signal wave equal to the complete coupling length of mode coupling between optical waveguides and setting the length of the proximity between the two optical waveguides to an integral multiple of the complete coupling length. CONSTITUTION:This optical switch is equipped with the two optical waveguides 11 and 12 and a signal electrode 14 formed on an optical substrate 10. Then the propagation distance corresponding to the 1/2 wavelength of the signal wave of the same frequency with a signal wave is equalized to the complete coupling length Lo of the mode coupling between the two optical waveguides 11 and 12 in a refractive index medium which has a value equal to the difference between the effective refractive index of the signal electrode 14 to the signal wave and the effective refractive index of the optical waveguides 11 and 12 to light. The length L of the proximity between the two optical waveguides 11 and 12 is set to the integral multiple of the complete coupling length Lo. The electrode length can, therefore, be increased by utilizing the phase speed difference between the signal wave and light. Consequently, the driving voltage can be reduced and the fast operation is enabled.

7. 发明专利

JPH01201609A OPTICAL DEVICE 失效
公开(公告)号：JPH01201609A
公开(公告)日：1989-08-14
申请号：JP2561788
申请日：1988-02-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MITOMI OSAMU , NOZAWA TOSHINORI , KONO KENJI , MIYAZAWA HIROSHI
IPC分类号： G02B6/122 , G02B6/12 , G02F1/035 , G02F1/31 , G02F1/313
摘要： PURPOSE:To reduce a driving voltage, and also, to execute a high speed operation by diffusing a diffusion substance from the surface of a substrate of the peripheral part of a ridge-shaped waveguide which has been formed on the surface of the substrate and making a refractive index in the substrate of the bottom part of an optical waveguide smaller than a refractive index of a core part of the optical waveguide. CONSTITUTION:In the optical device having a ridge-shaped optical waveguide 11 in the vicinity of one surface of a substrate 11, a ridge-shaped waveguide which has strengthened a confinement of light is used by diffusing impurities from the surface of the substrate except the optical waveguide 11 and making a refractive index of a core part of the optical waveguide 11 smaller than that of the vicinity of the center part of the optical waveguide 11. Therefore, a light spot size of the optical waveguide 11 is made smaller than that of an optical device made by a conventional technique, and a performance index can be made small. In such a way, by setting a driving voltage to the same degree as a conventional voltage, the optical device can be miniaturized and its high speed operation can be executed.

8. 发明专利

JPS645999A PRODUCTION OF THIN FILM OF FERROELECTRIC SINGLE CRYSTAL 失效
公开(公告)号：JPS645999A
公开(公告)日：1989-01-10
申请号：JP16216587
申请日：1987-06-29
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NOZAWA TOSHINORI , MIYAZAWA HIROSHI , SUZUKI TOSHIO
IPC分类号： C30B23/00 , C30B29/30
摘要： PURPOSE:To easily form a single crystal and to obtain the title thin film of a ferroelectric single crystal by depositing a thin single crystal film on a substrate substance through the thin film of an amorphous or polycrystal ferroelectric single crystal consisting of the same substance as the single crystal. CONSTITUTION:The thin film of an amorphous or polycrystal ferroelectric single crystal is deposited in specified thickness on the substrate substance. The thin film of a single crystal consisting of the same material as the above- mentioned thin film is deposited on the thin film while heating the single crystal. For example, a sapphire plate 1 is cleaned to obtain a clean surface, and amorphous lithium niobate is formed on the plate 1 in about 40-70mm thickness as a predeposited first layer 2 while keeping the plate 1 at a low temp. such as room temp. to mitigate the mismatching in the lattice constant between sapphire and lithium niobate. The sapphire plate 1 is then heated to about 500-600 deg.C, and a second layer 3 (thin single crystal film) of lithium niobate is formed. By this method, the thin film of a lithium niobate single crystal having good characteristics can be formed on the sapphire plate, etc., having the lattice constant highly mismatched with that of the thin film.

9. 发明专利

JPS61187380A AMORPHOUS SILICON PHOTOSENSOR 失效
公开(公告)号：JPS61187380A
公开(公告)日：1986-08-21
申请号：JP2783685
申请日：1985-02-15
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI MINORU , NOZAWA TOSHINORI , SUZUKI TOSHIO
IPC分类号： H01L31/0248 , H01L31/09 , H01L31/20
摘要： PURPOSE:To improve the ageing stability of electric characteristics by coating a thin amorphous Si film with a surface protective and photoconductive film made of a thin amorphous Si film at a temperature of the thin film forming temperature or lower. CONSTITUTION:A thin amorphous Si film 2 is formed by a glow discharge decomposing method using mixed gas of SiH4 and H2 on a substrate 1 heated to the prescribed temperature. An electrode 3 is formed by a vacuum depositing method using a mask. A protective and photoconductive film 4 is formed thereon by reducing only the temperature to the above temperature or lower by the same method as the formation of the film 2. With this construction, there is almost no possibility of cutting the Si-H bond of the film 2 of the layer layer when the film 4 is formed, and sufficiently high Si-H bond density can be maintained. The ageing stability of electric characteristics at high temperature and high temperature and high moisture preservation is improved.

10. 发明专利

JPS52101466A COAXIAL COMPOSITE CAPACITOR 失效
公开(公告)号：JPS52101466A
公开(公告)日：1977-08-25
申请号：JP1711376
申请日：1976-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE , NIPPON ELECTRIC CO , FUJITSU LTD , NITSUKO LTD
发明人： NOZAWA TOSHINORI , YOSHIDA YUUZOU , IMANISHI MASAHIRO , SEKINE EIJI
IPC分类号： H01G4/018 , H01G4/35 , H01G4/38

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