会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明专利
    • REFERENCE VOLTAGE GENERATING CIRCUIT
    • JPS58114109A
    • 1983-07-07
    • JP20971081
    • 1981-12-28
    • OKI ELECTRIC IND CO LTDNIPPON TELEGRAPH & TELEPHONE
    • MORI SHIGEKAZUKATAOKA MUTSUOUCHIMURA KUNIHARU
    • H03F1/26G05F3/30H03F1/30
    • PURPOSE:To make the MOS integration possible, by detecting voltages between respective bases and emitters of NPN transistors (TR) different in current density and the voltage difference between them to determine a reference voltage output and a temperature coefficient in a summing amplifier due to a capacity ratio. CONSTITUTION:NPN TRs 3 and 4 different in current density are connected between the first potential point VIN1 and an earth potential E, and emitters are connected to drains of MOSTRs 5 and 6. The emitter and the base of the TR4 are connected to the first capacity C1 through the first changeover switch S1, and emitters of TRs 3 and 4 are connected to the second capacity C2 through the second changeover switch S2, and capacities C1 and C2 are connected to the inverted terminal of a differential amplifier A2. The noninverted terminal of the amplifier A2 is grounded, and the thrid capacity C3 and a changeover switch S3 are connected between the output terminal and the inverted terminal of the amplifier A2, and the output of the amplifier A2 is applied to a differential amplifier A3 through the fourth changeover switch S4. These switches S1- S4 are operated by the control of a controlling circuit CC, and a reference voltage and a temperature coefficient are determined by the capacity ratio, thus making the MOS integration possible.