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1. 发明专利

JP2000256858A PLASMA CHEMICAL VAPOR PHASE GROWTH DEVICE 失效
公开(公告)号：JP2000256858A
公开(公告)日：2000-09-19
申请号：JP6132499
申请日：1999-03-09
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI
IPC分类号： H01L21/31 , C23C16/50 , C23C16/505 , G02B6/13
摘要： PROBLEM TO BE SOLVED: To provide a plasma chemical vapor phase growth device capable of buring recessed parts with a quartz film of dense and uniform film quality even if rugged parts are present at fine intervals on the surface of a substrate. SOLUTION: In a plasma chemical vapor phase growth device provided with an upper electrode 5 and a lower electrode 3 arranged mutually oppositely prescribed intervals and also parallel in a chamber, on the space between the upper electrode 5 and the lower electrode 3, a mesh board 105 is arranged, moreover, the lower electrode 3 serves also as a substrate stage, furthermore, a high-frequency power source is connected to the lower electrode 3, and the upper electrode 5 and the chamber are grounded.

2. 发明专利

JPH098157A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH098157A
公开(公告)日：1997-01-10
申请号：JP15309195
申请日：1995-06-20
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI
IPC分类号： H01L21/8247 , G11C16/02 , G11C16/04 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE: To provide a nonvolatile semiconductor memory device which holds electrons stored in a floating gate surely and increases a storage characteristic. CONSTITUTION: A silicon oxide film 11 in, e.g. 100nm is formed on the surface of a silicon wafer 10. Then, bron ions (B ) only in a prescribed amount are implanted through the silicon oxide film 11. After theroxide film 11 has been removed, a tunnel oxide film 12 in a film thickness of about 5nm is formed. Then, the wafer 10 is installed inside a reaction furnace, and a floating gate by a polysilicon film 13 is formed on the surface of the tunnel oxide film 12. In the polysilicon film 13, the impurity concentration of an intermediate part 132 is formed to be higher than that in a shallow part 133 and a deep part 131. Instead of this, the impurity concentration may be changed continuously.

3. 发明专利

JPH03283610A FORMATION OF SILICON SINGLE CRYSTALLINE FILM 失效
公开(公告)号：JPH03283610A
公开(公告)日：1991-12-13
申请号：JP8447490
申请日：1990-03-30
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI , FUKUDA HISASHI
IPC分类号： H01L21/205
摘要： PURPOSE:To acquire an Si single crystalline film of little defect by attracting an element of organic raw gas including Si to a foundation in a first heating treatment process and by forming Si on the foundation making Si remain on the foundation in a second heating treatment process. CONSTITUTION:A valve 27 is closed, valves 28, 53, 55 are opened, and heat treatment is carried out in an organic raw gas atmosphere including Si by a heating part 12; thereby, organic raw gas element including Si is attracted on a surface of a substrate 15 by monoatomic layer. Then, the valve 55 is closed to stop supply of raw gas, and the valves 28, 53 are closed and the valve 27 is opened to carry out second heating; thereby, Si alone of element including Si remains and Si of monoatomic layer is formed. Since an Si single crystalline film of a desired thickness is formed by repeating the attraction and release, it is possible to control a film thickness on an atomic layer level and to form an Si single crystalline film of little defect. It is desirable to heat the substrate 15 by infrared irradiation.

4. 发明专利

JPH03160720A FORMATION OF INSULATING FILM 失效
公开(公告)号：JPH03160720A
公开(公告)日：1991-07-10
申请号：JP29954689
申请日：1989-11-20
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI , FUKUDA HISASHI
IPC分类号： H01L21/316 , H01L21/28 , H01L21/306 , H01L21/314 , H01L29/51
摘要： PURPOSE:To improve controllability with respect to film thickness and dielectric breakdown strength by performing heat treatment in an atmosphere of an oxidizing gas which does not contain nitrogen after performing heat treatment one after another in an atmosphere of a reduction gas or in an atmosphere of a reactive gas as a cleaning measure for a silicon substrate and then, forming a 2nd insulating film on a 1st insulating film by treating the insulating film with heat in an atmosphere of dinitrogen monoxide. CONSTITUTION:Heat treatment is performed in an atmosphere of a reduction gas as a cleaning measure for a silicon substrate and then, a natural oxidation film is reduced by the reduction gas. As heat treatment is performed in an atmosphere of a reactive gas, the reactive gas that is thermally activated chemically reacts to impurities attached to the substrate and then, volatilization of its gas is performed. Since 1st and 2nd insulating films, further, are formed on the silicon substrate, for free bonds existing in the oxide film, i.e., the 1st insulating film, nitrogen atoms which exist in nitrogen oxide film, i.e., the 2nd insulating film enter into the oxide film, then newly Si-N bonding and O-N bonding are generated and the free bonds decrease. In this way, the insulating films which are superior in controllability with respect to film thickness, dielectric breakdown strength, and thin film quality are obtained.

5. 发明专利

JPH03154340A FORMATION OF INSULATING FILM 失效
公开(公告)号：JPH03154340A
公开(公告)日：1991-07-02
申请号：JP29367089
申请日：1989-11-10
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI , FUKUDA HISASHI
IPC分类号： H01L21/316
摘要： PURPOSE:To form an insulating film that is superior in film quality by forming the insulating film which has specific film thickness at a base after performing heat treatment in an atmosphere of an oxidizing gas and after that, in a state that a certain heat treatment temperature is maintained, by performing heat treatment continuously in an atmosphere of an inactive gas. CONSTITUTION:An oxidizing gas, e.g. an oxygen gas is supplied in a reaction furnace 10 in order to form an insulating film having a film thickness of less than about 100Angstrom on a substrate 18 by performing heat treatment in an atmo sphere of the oxidizing gas and an oxide film is formed on the surface of the substrate after heating the substrate 18 by giving heat treatment to a heating part 16. Then, an inactive gas, e.g. an Ar gas is supplied in the reaction furnace 10 in a state that a certain heat treatment temperature in the case of forming the oxide film is maintained for the substrate 18 on which the oxide film is formed and heat treatment is carried out for hours desired. As a result, after insulating films are formed, the insulating films which are not bonded yet and have weak bonding are lessened by heat treatment in an atmosphere of the inactive gas. Each insulating film which has the film thickness of less than about 100Angstrom and is superior in film quality is thus formed.

6. 发明专利

JP2004055717A Variable light gain control device 审中-公开
公开(公告)号：JP2004055717A
公开(公告)日：2004-02-19
申请号：JP2002209235
申请日：2002-07-18
申请人： Oki Electric Ind Co Ltd , 沖電気工業株式会社
发明人： ARAKAWA TOMIYUKI
IPC分类号： H01S3/10 , G02B6/12 , G02B6/122 , G02B6/28 , H01S3/06 , H01S3/063 , H01S3/16
CPC分类号： G02B6/2852 , G02B6/122 , G02B2006/121 , G02B2006/12159 , H01S3/063 , H01S3/1608 , H01S3/2308 , H01S3/2383
摘要： PROBLEM TO BE SOLVED: To provide a variable light gain control device wherein light intensity does not attenuate, while controlling the light intensity. SOLUTION: An optical circuit 100 is formed on a planar surface substrate, and provided with an input port 121 for inputting an input optical signal 122, an input port 123 for inputting a pumping laser light, a first directional coupler 125 for combining the input optical signal 122 with the pumping laser light 124, an optical intensity control part 106 for controlling the intensity of the optical signal combined with the pumping laser light 124, a second directional coupler 126 for isolating the pumping laser light 124 from the optical signal, an output port 127 for outputting a controlled optical signal, and an output port 129 for outputting the pumping laser light 124. An optical waveguide 110 is doped with rare earth elements, and the variable light gain control device is obtained which amplifies and outputs the optical signal by the action of the pumping laser light 124. COPYRIGHT: (C)2004,JPO

7. 发明专利

JPH11231160A MANUFACTURE OF OPTICAL WAVEGUIDE 失效
公开(公告)号：JPH11231160A
公开(公告)日：1999-08-27
申请号：JP5290298
申请日：1998-02-17
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI
IPC分类号： G02B6/13
摘要： PROBLEM TO BE SOLVED: To provide an optical waveguide manufacturing method which can easily embed an upper clad even when the ratio of the height of a core and the distance between the cores is large and can manufacture a high-precision optical waveguide. SOLUTION: This method for manufacturing the optical waveguide in which cores and a clad layer surrounding the cores are formed on a substrate includes a process for forming a lower clad layer on the substrate 11, a process for forming the core layer over the entire top surface of the lower clad layer, a process for forming the cores of the core layer, a process for forming a 1st upper clad layer 16 of specific thickness over the entire top surface of the lower clad layer and cores, a process for forming an inorganic SOG(spin on glass) film 17 in a groove 16a formed between the cores, and a process for forming a 2nd upper clad layer 18 over the entire top surface of the 1st upper clad layer and inorganic SOG film. Since the inorganic SOG film is formed, the ratio of the width and height of the groove is decreased to reduce the tilt of a side wall part.

8. 发明专利

JPH1123877A FORMATION OF QUARTZ FILM AND MANUFACTURE OF QUARTZ-BASED OPTICAL WAVEGUIDE 失效
公开(公告)号：JPH1123877A
公开(公告)日：1999-01-29
申请号：JP18162697
申请日：1997-07-07
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI
IPC分类号： G02B6/13 , G02B6/132 , G02B1/10
摘要： PROBLEM TO BE SOLVED: To obtain the optical waveguide of high quality by making it possible to form a quartz film at lower temperature than before. SOLUTION: On the main surface 18 of a silicon wafer 10, a silicon oxide film 12 is formed. Silicon is vapor-deposited obliquely on the main surface 18 of the silicon wafer 10. Then a polycrystalline silicon film 14 is formed on the top surface of the silicon oxide film 12. Then the polycrystalline silicon film 14 is subjected to heat oxidation to obtain the quartz film 20 as a clad layer.

9. 发明专利

JPH09307006A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH09307006A
公开(公告)日：1997-11-28
申请号：JP12119496
申请日：1996-05-16
申请人： OKI ELECTRIC IND CO LTD
发明人： ARAKAWA TOMIYUKI
IPC分类号： G11C17/00 , G11C16/02 , G11C16/04 , G11C16/06 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of storing calculation results and process even after power is turned off by providing first nonvolatile memory cells having floating gates and second nonvolatile memory cells having control gates and laminated floating gates connected to the floating gates of the first cells. SOLUTION: N floating gates gf1 '-gfn ' extending from input cells a1 -1n are laminated between a tunnel oxide film 3 and control gate 2 of an output cell(s) and isolated by a layer insulating film 4 of the output cell(s). Charges q1 -qn corresponding to the respective input voltages or applied times are injected to the floating gates gf1 '-gfn ' of the cells a1 -an and charges q1 +...+qn with addition of these charges are stored in the floating gates gf1 '-gfn ' of the output cell(s). As the result, the threshold voltage of the cell(s) has a value corresponding to q1 +...+qn , this enabling the addition/subtraction of multi-input analog values.

10. 发明专利

JPH03134153A METHOD AND DEVICE FOR FORMING OXIDE FILM 失效
公开(公告)号：JPH03134153A
公开(公告)日：1991-06-07
申请号：JP26975989
申请日：1989-10-17
申请人： OKI ELECTRIC IND CO LTD
发明人： FUKUDA HISASHI , ARAKAWA TOMIYUKI
IPC分类号： C23C8/12 , F27D7/02 , H01L21/31 , H01L21/316
摘要： PURPOSE:To form an oxide film having excellent film quality at a desired film thickness by incorporating gaseous ozone into an oxidating gas at the time of introducing the oxidizing gas into a reaction furnace and subjecting a substrate to a rapid heating treatment. CONSTITUTION:The gas for purging (inert gas, etc.) is introduced from a gas source 14a into the reaction furnace 10 and the substrate 18 subjected to cleaning after oxidizing is is fixed onto a base 20 of a lifting member 10c. The inside of the reaction chamber 10 is evacuated to a vacuum by a discharge means 12 and an ozone generator 51 is operated to supply gaseous oxygen from an oxidizing gas source 14b to introduce the oxidizing gas contg. the gaseous ozone into the reaction furnace 10, by which the prescribed reduced pressure state is maintained. The substrate 18 is heated in this state by an IR lamp 16a of a heating section 16 to form the oxide film on the surface of the substrate 18; thereafter, the heating of the substrate 18 is stopped and the substrate is cooled. The substrate is then taken out of the reaction furnace 10. The desired oxide film is obtd. at about 1000 deg.C and the generation of a slip in the substrate 18 is obviated.

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