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1. 发明专利

JP2014103188A Method of manufacturing epitaxial silicon carbide wafer 有权
标题翻译：制造外延硅碳膜的方法
公开(公告)号：JP2014103188A
公开(公告)日：2014-06-05
申请号：JP2012252887
申请日：2012-11-19
申请人： Nippon Steel & Sumitomo Metal , 新日鐵住金株式会社 , Nippon Steel Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社 , Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ITO WATARU , AISATO TAKASHI , HOSHINO TAIZO , TACHIKAWA AKIYOSHI , HIRAMATSU HIROO , FUKUDA MASANAO , HARA DAISUKE , SASAKI TAKASHI
IPC分类号： H01L21/205 , C01B31/36 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial SiC wafer which allows for epitaxial growth of a SiC single crystal thin film with excellent productivity while suppressing variation in doping density, by using a substrate processing apparatus of vertical arrangement structure.SOLUTION: In a method of manufacturing an epitaxial silicon carbide wafer, doping gas is supplied while mixing a rare gas as a carrier gas, when forming a silicon carbide single crystal thin film on the surface of each silicon carbide single crystal substrate by a thermal CVD method, where a silicon material gas, a carbon material gas, and a doping gas are introduced individually through a silicon material gas introduction pipe, a carbon material gas introduction pipe, and a doping gas introduction pipe arranged vertically in a growth chamber, and gas outlets are provided at positions corresponding to the gaps between the silicon carbide single crystal substrates where the gas introduction pipes are arranged vertically.
摘要翻译：要解决的问题：提供一种制造外延SiC晶片的方法，其通过使用垂直布置结构的基板处理装置，可以抑制掺杂密度的变化，从而以优异的生产率外延生长SiC单晶薄膜。解决方案：在制造外延碳化硅晶片的方法中，当通过热CVD法在每个碳化硅单晶衬底的表面上形成碳化硅单晶薄膜时，在混合稀有气体作为载气的同时供给掺杂气体，其中硅材料气体，碳材料气体和掺杂气体通过硅材料气体导入管，碳材料气体导入管和在生长室中垂直布置的掺杂气体引入管单独引入，气体出口是设置在与碳纳米管单晶基板之间的间隙对应的位置处，其中气体引入管道垂直排列。

2. 发明专利

JP2014123616A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2014123616A
公开(公告)日：2014-07-03
申请号：JP2012278100
申请日：2012-12-20
申请人： Nippon Steel & Sumitomo Metal , 新日鐵住金株式会社 , Nippon Steel Sumikin Materials Co Ltd , 新日鉄住金マテリアルズ株式会社 , Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： ITO WATARU , AISATO TAKASHI , HOSHINO TAIZO , TACHIKAWA AKIYOSHI , FUKUDA MASANAO , HARA DAISUKE , SASAKI TAKASHI , HIRAMATSU HIROO
IPC分类号： H01L21/205 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a vertical batch type SiC epitaxial growth apparatus properly controlling an impurity concentration of an SiC epitaxial growth film formed on a plurality of substrates.SOLUTION: A substrate processing apparatus includes a processing chamber in which substrates in a horizontal state are vertically arranged at predetermined intervals, a heating unit for heating the substrates stored in the processing chamber, a gas supply unit for supplying a gas into the processing chamber, and an exhaust unit for discharging the gas from the inside of the processing chamber. The gas supply unit includes a first gas supply nozzle having a gas supply hole for supplying a silicon atom-containing gas in the vertical substrate arrangement region, a second gas supply nozzle having a gas supply hole for supplying a carbon atom-containing gas and a reducing gas in the vertical substrate arrangement region, and a doping gas-dedicated nozzle having a gas supply hole for supplying a doping gas in a partial region of the vertical substrate arrangement region, and supplies the doping gas to at least one of the first gas supply nozzle and the second gas supply nozzle.
摘要翻译：要解决的问题：提供一种适当地控制形成在多个基板上的SiC外延生长膜的杂质浓度的立方批式SiC外延生长装置。解决方案：基板处理装置包括处理室，其中处于水平状态的基板以规定的间隔垂直配置，加热单元，用于加热存储在处理室中的基板;气体供给单元，用于向处理室供应气体;以及排气单元，用于从处理室的内部排出气体。气体供给单元包括具有用于在垂直基板排列区域供给含硅原子的气体的气体供给孔的第一气体供给喷嘴，具有供给含有碳原子的气体的气体供给孔的第二气体供给喷嘴和以及掺杂气体专用喷嘴，其具有用于在所述垂直基板排列区域的部分区域中供给掺杂气体的气体供给孔，并且将所述掺杂气体供给到所述第一气体中的至少一个供给喷嘴和第二气体供给喷嘴。

3. 发明专利

JP2014179550A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2014179550A
公开(公告)日：2014-09-25
申请号：JP2013053949
申请日：2013-03-15
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： IMAI YOSHINORI , SASAKI SHINYA , NISHIDO SHUHEI , HARA DAISUKE
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which suppresses deterioration of the inner surface of a treatment gas supply nozzle and have a gas supply nozzle endurable in stable use for a long period of time.SOLUTION: A substrate processing apparatus includes: a substrate holder 30 which holds a plurality of substrates 14 by laminating them in the vertical direction; a processing chamber 45 in which the substrate holder 30 is carried to process substrates 14; and a gas supply nozzle having gas supply holes through which treatment gas is supplied into the processing chamber 45. In the gas supply nozzle, on the nozzle inner surface, a protective film 84 is coated which is formed by Tac or thermal decomposition carbon.
摘要翻译：要解决的问题：提供一种抑制处理气体供给喷嘴的内表面劣化的基板处理装置，并且具有能够长时间稳定地使用的气体供给喷嘴。解决方案：基板处理装置包括：基板支架30，其通过在垂直方向上层叠多个基板14而保持多个基板14; 处理室45，其中承载衬底保持器30以处理衬底14; 以及具有供气孔的气体供给喷嘴，处理气体通过该供气孔供给到处理室45.在气体供给喷嘴中，在喷嘴内表面上涂覆由Tac或热分解碳形成的保护膜84。

4. 发明专利

JP2012195565A Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device 审中-公开
标题翻译：基板加工装置，基板加工方法及半导体装置的制造方法
公开(公告)号：JP2012195565A
公开(公告)日：2012-10-11
申请号：JP2012023305
申请日：2012-02-06
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： HARA DAISUKE , ITO TAKESHI , FUKUDA MASANAO , YAMAGUCHI TENWA , HIRAMATSU HIROO , NISHIDO SHUHEI , SASAKI TAKASHI
IPC分类号： H01L21/205 , C01B31/36 , C23C16/455
CPC分类号： H01L21/67109 , C23C16/325 , C23C16/4405 , C23C16/4412 , C23C16/455 , C23C16/458 , C23C16/4581 , C23C16/4582 , C23C16/4583 , C23C16/4584 , C23C16/4587 , C23C16/4588 , C23C16/46 , C30B25/08 , C30B25/14 , C30B29/36 , H01L21/67303 , H01L21/67309 , H01L21/67757
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which lowers a film-forming gas to a heatproof temperature of a manifold and improves the uniformity of the film quality when ultra high temperature processing, such as SiC epitaxial growth, is conducted at a temperature ranging from 1500°C to 1700°C.SOLUTION: A substrate processing apparatus includes: a reaction chamber 44 performing processing of multiple substrates 14; a substrate holder 15 holding the multiple substrates 14; and a heat exchange part 34 provided in the reaction chamber 44 and forming a passage narrower than a passage in the reaction chamber 44 where a film-forming gas flows. The substrate processing apparatus, having a space 340 below the substrate held by the lowermost part of the substrate holder 15, is used.
摘要翻译：要解决的问题：提供一种将成膜气体降低到歧管的耐热温度的基板处理装置，并且当进行超高温处理（例如SiC外延生长）时，提高膜质量的均匀性在1500℃至1700℃的温度范围内。解决方案：基板处理设备包括：执行多个基板14的处理的反应室44; 保持多个基板14的基板保持件15; 以及设置在反应室44中并形成比成膜气体流动的反应室44中的通道窄的通道的热交换部分34。使用在基板保持件15的最下部保持的基板的下方具有空间340的基板处理装置。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012175077A Substrate processing device, method of manufacturing substrate, and method of manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置，制造基板的方法和制造半导体器件的方法
公开(公告)号：JP2012175077A
公开(公告)日：2012-09-10
申请号：JP2011038805
申请日：2011-02-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： KURIBAYASHI YUKINAGA , ITO TAKESHI , HARA DAISUKE , YAMAGUCHI TENWA , SASAKI TAKASHI
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To suppress that, in a vertical tube processing device, a reaction gas ejected from a gas supply port provided to an uppermost part of a gas supply nozzle flows into a space above an upper surface of a wafer boat, which causes the change in the flow rate and the flow quantity of the reaction gas in a processing chamber.SOLUTION: A device has: a reaction chamber 44 for processing a plurality of substrates 14; a heating part 48 provided so as to surround the reaction chamber 44; a boat 30 holding the plurality of substrates 14 and put in the reaction chamber 44; gas supply nozzles 60 and 70 installed in the reaction chamber 44 and having a plurality of gas supply ports for supplying a deposition gas toward the plurality of substrates 14; air exhaust ports 90 and 390 exhausting an atmosphere in the reaction chamber 44; rectification walls provided so as to sandwich a lateral face of the boat 30; and a gas flow suppression part 310 provided above upper ends of the gas supply nozzles 60 and 70, and provided in a flow channel from the plurality of gas supply ports toward the air exhaust port 90 through a space above an upper end of the boat 30.
摘要翻译：解决的问题为了抑制在垂直管处理装置中，从设置在气体供给喷嘴的最上部的气体供给口喷射的反应气体流入晶片舟皿的上表面上方的空间，其导致处理室中的反应气体的流量和流量的变化。解决方案：装置具有：用于处理多个基板14的反应室44; 设置为围绕反应室44的加热部48; 保持多个基板14并放入反应室44中的船30; 气体供给喷嘴60和70安装在反应室44中并具有用于向多个基板14供给沉积气体的多个气体供给口; 排气口90和390排出反应室44中的气氛; 整流壁设置成夹着船30的侧面; 以及气体流动抑制部310，其设置在气体供给喷嘴60和70的上端的上方，并且设置在从多个气体供给口朝向排气口90的流路中，通过船30的上端上方的空间（C）2012年，JPO＆INPIT

6. 发明专利

JP2012175075A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2012175075A
公开(公告)日：2012-09-10
申请号：JP2011038803
申请日：2011-02-24
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO AKIHIRO , YAMAGUCHI TENWA , HARA DAISUKE
IPC分类号： H01L21/205 , C01B31/36 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To reduce a risk of damage of a gas nozzle and simplify the nozzle adjustment as there is a risk for the damage to the gas nozzle and it takes a fair amount of time to adjust the nozzle position and direction when the gas nozzle is connected to a gas supply port with a conventional gas nozzle fixing structure.SOLUTION: A gas supply nozzle structure has a gas supply port which is provided at the inner side of a processing chamber on an upper surface of a manifold and extends to the exterior of the processing chamber penetrating the manifold through a nozzle fixing plate. The gas supply nozzle is supported by the nozzle fixing plate while fitting therein.
摘要翻译：要解决的问题：为了降低气体喷嘴损坏的风险，简化喷嘴调整，因为有气体喷嘴损坏的风险，并且花费相当长的时间来调整喷嘴位置和方向当气体喷嘴连接到具有常规气体喷嘴固定结构的气体供给口时。气体供给喷嘴结构具有气体供给口，该气体供给口设置在歧管的上表面的处理室的内侧，并且延伸到处理室的外部，其通过喷嘴固定板。气体供给喷嘴在其中装配时由喷嘴固定板支撑。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011068965A Substrate treatment device and method for manufacturing semiconductor device 审中-公开
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：JP2011068965A
公开(公告)日：2011-04-07
申请号：JP2009222261
申请日：2009-09-28
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： NIIMURA NORIHIRO , MUROBAYASHI MASASUE , HARA DAISUKE
IPC分类号： C23C14/46 , H01L21/285 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device in which the angle of a target can be adjusted. SOLUTION: The substrate treatment device comprises: an ion source generating ions; a target to which an ion beam emitted by the ion source is emitted; a target holder holding the target; a substrate holder holding the substrate at a position to be deposited with target component grains sprung out from the target; and an angle adjustment part adjusting the angle of the target to the ion beam. The angle of the target held in the target holder is adjusted by an angle adjustment part, the ion beam emitted by the ion source is emitted to the target, and the target component sprung out from the target is deposited on the substrate held by the substrate holder. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以调节目标角度的基板处理装置。底物处理装置包括：产生离子的离子源; 由离子源发射的离子束发射的靶; 持有目标的目标持有人; 将基板保持在要从靶上弹出的靶成分颗粒沉积位置的基板保持架; 以及角度调整部，其将靶的角度调整为离子束。通过角度调节部来调整保持在目标支架上的目标的角度，由离子源发射的离子束向目标发射，并且从靶上弹出的目标成分被沉积在被基板保持的基板上持有人。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2013197474A Substrate processing method, semiconductor device manufacturing method and substrate processing apparatus 审中-公开
标题翻译：基板处理方法，半导体器件制造方法和基板处理装置
公开(公告)号：JP2013197474A
公开(公告)日：2013-09-30
申请号：JP2012065413
申请日：2012-03-22
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： SATO AKIHIRO , NISHIDO SHUHEI , SASAKI TAKASHI , HARA DAISUKE
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method, a semiconductor device manufacturing method, and a substrate processing apparatus which can uniformly deposit a plurality of substrates and reliably remove by-products in an exhaust pipe when performing SiC epitaxial film growth under a high temperature condition thereby to improve productivity and safety.SOLUTION: A substrate processing method comprises: a boat loading process of carrying in a plurality of substrates while being held by a boat into a reaction chamber; a gas supply process of supplying a gas to the substrates; an exhaust process of exhausting the gas supplied in the gas supply process from an exhaust pipe; and a cleaning gas supply process of supplying a cleaning gas for cleaning inside the exhaust pipe to a cleaning gas flow path in the exhaust pipe.
摘要翻译：要解决的问题：提供一种基板处理方法，半导体器件制造方法和基板处理装置，其可以在高速下进行SiC外延膜生长时能够均匀地沉积多个基板并可靠地除去排气管中的副产物温度条件，从而提高生产率和安全性。解决方案：一种基板处理方法，包括：在由船保持在反应室中的同时承载多个基板的船装载过程; 向基板供给气体的气体供给工序; 从排气管排出在供气过程中供应的气体的排气过程; 以及清洁气体供给处理，其将排气管内的清洗用清洁气体供给到排气管内的清洗气体流路。

9. 发明专利

JP2013187459A Substrate processing apparatus 审中-公开
标题翻译：基板加工设备
公开(公告)号：JP2013187459A
公开(公告)日：2013-09-19
申请号：JP2012052946
申请日：2012-03-09
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： MUROBAYASHI MASASUE , HARA DAISUKE , SATO AKIHIRO , SASAKI TAKASHI , KURIBAYASHI YUKINAGA
IPC分类号： H01L21/205 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To reduce the inclination of a gas supply nozzle when the gas supply nozzle is installed in a reaction chamber at a vertical type substrate processing apparatus which houses and processes multiple substrates in the reaction chamber.SOLUTION: A substrate processing apparatus includes: a reaction tube which forms a reaction chamber where substrates are processed and houses multiple wafers 23 in a reaction space 16 secured in the reaction chamber with the multiple wafers 23 vertically stacked; gas supply nozzles 21, 22 installed in the reaction space 16 so as to be arranged along a vertical direction; and inclination inhibition means inhibiting the inclination of the gas supply nozzles. The inclination inhibition means includes a nozzle fixing member 61 where a nozzle receiving part 63, receiving lower end parts of the gas supply nozzles 21, 22 with a receiving surface, is formed.
摘要翻译：要解决的问题：为了减小在气体供给喷嘴安装在反应室中的反应室中倾斜的倾斜，垂直型基板处理装置容纳并处理反应室中的多个基板。解决方案：基板处理装置包括反应管，其形成反应室，在反应室中处理基板，并且在垂直堆叠的多个晶片23的反应室内固定的反应空间16中容纳多个晶片23; 安装在反应空间16中以沿垂直方向布置的气体供给喷嘴21,22; 以及抑制气体供给喷嘴倾斜的倾斜抑制装置。倾斜抑制装置包括喷嘴固定部件61，其中形成有接收具有接收表面的气体供给喷嘴21,22的下端部的喷嘴接收部63。

10. 发明专利

JP2013175641A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2013175641A
公开(公告)日：2013-09-05
申请号：JP2012039964
申请日：2012-02-27
申请人： Hitachi Kokusai Electric Inc , 株式会社日立国際電気
发明人： YAMAGUCHI TENWA , HARA DAISUKE , NISHIDO SHUHEI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a technology which prevents the damage of a boat when the boat holding a substrate is carried into or out from a processing chamber.SOLUTION: According to this invention, an opening 93a or an opening 93b is formed at a center part of an upper plate 91a or a lower plate 91b of a boat 90. Thus, even if the upper plate 91a or the lower plate 91b of the boat 90 is rapidly heated or rapidly cooled, a temperature difference between an outer peripheral part and the center part is suppressed in the upper plate 91a or the lower plate 91b. Therefore, the structure prevents the damage of the upper plate 91a or the lower plate 91b of the boat 90 in a case where the boat 90 is carried into or out from the processing chamber when a temperature in the processing chamber is higher than a temperature in the exterior of the processing chamber.
摘要翻译：要解决的问题：提供一种技术，当将保持基板的船运送到处理室中时，防止船的损坏的技术。解决方案：根据本发明，开口93a或开口93b形成在船90的上板91a或下板91b的中心部分。因此，即使船90的上板91a或下板91b被快速加热或快速冷却，外周部和中心部分被抑制在上板91a或下板91b中。因此，当处理室中的温度高于处理室中的温度时，结构可以防止在船90被搬入或移出处理室的情况下船90的上板91a或下板91b的损坏处理室的外部。

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