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1. 发明专利

JP2005283259A Sensor using pressure sensitive material and its manufacturing method 有权
标题翻译：传感器使用压力敏感材料及其制造方法
公开(公告)号：JP2005283259A
公开(公告)日：2005-10-13
申请号：JP2004096178
申请日：2004-03-29
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： MIYAKE KOJI , TSUKAGOSHI KIYOMI , MIZUTANI WATARU , ISHIDA TAKAO
IPC分类号： G01L1/24 , G01K11/12 , G01N21/70
摘要： PROBLEM TO BE SOLVED: To amplify and improve mechanically and structurally pressure measuring sensitivity by microprocessing a pressure sensitive material including a pressure-sensitive coloring matter to form fine self-standing bodies.
SOLUTION: In this sensor comprising a material including the pressure-sensitive coloring matter, the pressure sensitive material is used, characterized by being equipped with fine self-standing slices or fine membranous or beam-shaped structures having the maximum external dimension of 1-500 μm. Otherwise, in the sensor comprising the material including the pressure-sensitive coloring matter, the pressure sensitive material is used, characterized by being equipped with fine projecting or granular structures having the diameter of 1-500 μm.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过对包括压敏色素的压敏材料进行微处理以扩大和改善机械和结构的压力测量灵敏度，以形成精细的自立体。解决方案：在包括压敏色素的材料的该传感器中，使用压敏材料，其特征在于，其具有精细的自立切片或具有最大外部尺寸的细小的膜状或束状结构 1-500微米。否则，在包含压敏色素的材料的传感器中，使用压敏材料，其特征在于具有直径为1-500μm的细小的突出或粒状结构。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2013179020A Organic photoelectronic element 审中-公开
标题翻译：有机光电元件
公开(公告)号：JP2013179020A
公开(公告)日：2013-09-09
申请号：JP2012117145
申请日：2012-05-23
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , Denshikako Co Ltd , 電子化工株式会社
发明人： MIZUTANI WATARU , AOBA KAZUMI , OMORI TAKASHI , SAKAI HIDEKI , MOMOTAKE ISATO
IPC分类号： H05B33/28 , H01L51/42 , H01L51/50 , H05B33/02
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a simple method for preparing an organic photoelectronic element in which an upper structure thereof is structured while an organic conductive film is applied over the entire surface of a base material by photogravure coating, spin coating or the like.SOLUTION: An organic photoelectronic element includes: a base material and an organic conductive film on the base material; a metal electricity-conductive layer provided on the organic conductive film; and a non-metal conductive material film exhibiting high resistivity against the organic conductive film provided so as to be brought into contact with the electricity-conductive layer. Another organic photoelectronic element includes: a base material and an organic transparent conductive film on the base material; an organic luminescent material film formed on the organic transparent conductive film; a metal electricity-conductive layer provided on the organic luminescent material film; and a non-metal conductive material film exhibiting high resistivity against the organic conductive film provided so as to be brought into contact with the metal electricity-conductive layer.
摘要翻译：要解决的问题：提供一种简单的制备其上部结构的有机光电子元件的方法，同时通过照相凹版涂布，旋涂等将有机导电膜施加在基材的整个表面上。有机光电元件包括：基材和基材上的有机导电膜; 设置在有机导电膜上的金属导电层; 以及与有机导电膜呈现高电阻率的非金属导电材料膜，其被设置成与导电层接触。另一种有机光电子元件包括：基材和基材上的有机透明导电膜; 形成在有机透明导电膜上的有机发光材料膜; 设置在有机发光材料膜上的金属导电层; 以及与所述有机导电膜呈现高电阻率的非金属导电材料膜，所述有机导电膜设置成与所述金属导电层接触。

3. 发明专利

JP2012164587A Method of manufacturing organic photoelectric conversion device 审中-公开
标题翻译：制造有机光电转换装置的方法
公开(公告)号：JP2012164587A
公开(公告)日：2012-08-30
申请号：JP2011025549
申请日：2011-02-09
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SUZUKI KENKICHI , SHIMIZU HIROSHI , YATSUSE KIYOSHI , MIZUTANI WATARU
IPC分类号： H05B33/10 , H01L51/42 , H01L51/50
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To obtain a polymer organic photoelectric conversion device having a multilayer structure similar to that of a low-molecular organic photoelectric conversion device.SOLUTION: The method of manufacturing an organic photoelectric conversion device includes a step for preparing a film-like electrode substrate, a step for supplying a polymer organic material composing a photoelectric conversion device, in semi-molten state, to a plurality of calender roller systems, separately, and then rolling the polymer organic material, separately, by means of a plurality of calender rollers configuring the plurality of calender roller systems thus producing a plurality of films, and a step for laminating the plurality of films sequentially on the electrode substrate in the order of occurrence of photoelectric conversion function.
摘要翻译：要解决的问题：获得具有类似于低分子有机光电转换装置的多层结构的聚合物有机光电转换装置。解决方案：制造有机光电转换装置的方法包括制备薄膜状电极基板的步骤，半熔融状态的构成光电转换装置的聚合物有机材料的步骤，砑光辊系统，然后分别通过构成多个砑光辊系统的多个砑光辊分别滚动聚合物有机材料，从而产生多个膜，以及将多个膜依次层压在电极基板按顺序发生光电转换功能。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2007123828A Switching device 有权
标题翻译：切换设备
公开(公告)号：JP2007123828A
公开(公告)日：2007-05-17
申请号：JP2006189380
申请日：2006-07-10
申请人： Funai Electric Advanced Applied Technology Research Institute Inc , National Institute Of Advanced Industrial & Technology , 株式会社船井電機新応用技術研究所 , 独立行政法人産業技術総合研究所
发明人： NAITO YASUHISA , HORIKAWA MASAYO , ABE HIDEKAZU , SHIMIZU TETSUO , MIZUTANI WATARU , FURUTA SHIGEO , ONO MASATOSHI , TAKAHASHI TAKESHI
IPC分类号： H01L21/28 , B82B1/00 , H01L21/285 , H01L27/10 , H01L29/06 , H01L29/41
CPC分类号： H01L45/1226 , H01L45/04 , H01L45/12
摘要： PROBLEM TO BE SOLVED: To provide a non-volatile switching device that is of very simple structure and is capable of performing a stable repeated switching operation. SOLUTION: The switching device 100 includes an insulative substrate 10, a first electrode 20 provided on the insulative substrate 10, a second electrode 30 provided on the insulative substrate 10, and an interelectrode clearance 40 that is provided between the first electrode 20 and the second electrode 30 and has a distance G between the first electrode 20 and the second electrode 30 being 0 nm COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种结构非常简单且能够进行稳定的重复切换操作的非易失性开关装置。解决方案：开关装置100包括绝缘基板10，设置在绝缘基板10上的第一电极20，设置在绝缘基板10上的第二电极30和设置在第一电极20之间的电极间间隙40 并且第二电极30的第一电极20和第二电极30之间的距离G为0nm

5. 发明专利

JP2006128438A Method of forming nano-gap electrode and nano-gap electrode obtained thereby, and element equipped with the electrode 审中-公开
标题翻译：形成纳米GAP电极和获得的纳米GAP电极的方法及与电极配套的元件
公开(公告)号：JP2006128438A
公开(公告)日：2006-05-18
申请号：JP2004315502
申请日：2004-10-29
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAITO YASUHISA , HORIKAWA MASAYO , MIZUTANI WATARU
IPC分类号： H01L21/28 , G03F7/20 , H01L21/285 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To manufacture a specified nano-gap electrode having a gap length of 1-20 nm and an electrode width of 100 nm or less by using a technology of patterning accuracy in the order of microns without using electron beam exposure having a high running cost.
SOLUTION: The method of forming the gap electrode comprises processes of forming the pattern of a photo mask on a substrate by light exposure, carrying out the first-time slanting evaporation of an electrode material, lifting it off, carrying out a second-time light exposure to form a slit pattern extended across the evaporated electrode film formed by the first-time evaporation, carrying out the second-time slanting evaporation of the electrode material, and lifting it off. In the method of forming the nano-gap electrode, when forming the slit pattern, the slit pattern is formed at an angle α
摘要翻译：要解决的问题：通过使用图案化精度为微米级的技术而不使用电子束来制造具有1-20nm的间隙长度和100nm或更小的电极宽度的规定的纳米间隙电极暴露的运行成本高。解决方案：形成间隙电极的方法包括通过曝光在基板上形成光掩模的图案的过程，执行电极材料的首次倾斜蒸发，将其提升，进行第二次时间曝光以形成延伸穿过由第一次蒸发形成的蒸发的电极膜的狭缝图案，进行电极材料的第二次倾斜蒸发并将其提起。在形成纳米间隙电极的方法中，当形成狭缝图案时，相对于第一次蒸发电极形成与<90°成角度的角度的狭缝图案。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006058020A Surface potential measuring type sensor device 有权
标题翻译：表面电位测量型传感器装置
公开(公告)号：JP2006058020A
公开(公告)日：2006-03-02
申请号：JP2004237173
申请日：2004-08-17
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAKAMURA TORU , KOYAMA EMIKO , TOKUHISA HIDEO , MIZUTANI WATARU , TSUKAGOSHI KIYOMI , NAITO YASUHISA , ISHIDA TAKAO , HUIHIA DENG , KINRI MASATOSHI , SUZUKI YASUZO , KAWANISHI YUJI
IPC分类号： G01N27/416 , C12M1/00 , C12N15/09 , G01N33/53
摘要： PROBLEM TO BE SOLVED: To provide a surface potential measuring type sensor device capable of simply sensing many components in a specimen with ultrahigh sensitivity using a microelectrode for measuring surface potential. SOLUTION: The surface potential measuring type sensor device is composed of a reference potential measuring region, a sensor membrane region constituted by sucking a nanosensor, which is composed of a sensing unit reference potential measuring region for producing a potential change as a signal when a target molecule is recognized by one kind or a plurality of kinds of host molecules and a bonding unit for bonding the sensing unit, on a substrate, on the surface of the substrate, an accumulation sensor part wherein a plurality of the three-element regions of wiring net regions for monitoring potential are accumulated on a silicon substrate, a covered lead part for feeding the signal to a controller, an adaptor part for connecting the same and a measuring controller part to which those parts are connected. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种表面电位测量型传感器装置，其能够使用用于测量表面电位的微电极，以超高灵敏度简单地感测样品中的许多部件。解决方案：表面电位测量型传感器装置由参考电位测量区域，由吸收纳米传感器构成的传感器膜区域构成，该传感器膜区域由用于产生电位变化的感测单元参考电位测量区域作为信号当通过一种或多种主体分子识别出靶分子和用于将感测单元接合的接合单元时，在基板上的基板表面上的累积传感器部分，其中多个三元件用于监视电位的布线网区的区域被累积在硅基板上，用于将信号馈送到控制器的被覆盖引线部分，用于连接的信号的适配器部分和与这些部件连接的测量控制器部分。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005235879A Nano scale field effect element having air gap between source electrode and drain electrode processed with fine metal particle coated with thiol or disulfide molecule 审中-公开
标题翻译：具有源极电极和漏极电极之间的空气隙的纳米尺度场效应元件与用THIOL或DISIFFIDE分子涂覆的金属微粒加工
公开(公告)号：JP2005235879A
公开(公告)日：2005-09-02
申请号：JP2004040812
申请日：2004-02-18
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： HORIKAWA MASAYO , NAKANO YOSHINORI , ISHIDA TAKAO , NAITO YASUHISA , MIZUTANI WATARU
IPC分类号： H01L29/06 , H01L29/66 , H01L29/786 , H01L29/80 , H01L51/00 , H01L51/05
摘要： PROBLEM TO BE SOLVED: To provide a nanometer scale field effect element exhibiting good reproducibility of signal. SOLUTION: In a field effect element comprising a source electrode S, a gate electrode, and a drain electrode D fabricated in a semiconductor substrate in nanometer scale, a space above the semiconductor substrate connecting the source electrode and the drain electrode is processed with fine metal particles coated with thiol or disulfide represented by general formula CH 3 (CH 2 ) n SH or (CH 3 (CH 2 ) n SH-) 2 (in the formula, n is an integer of 3-30). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供显示出良好的信号再现性的纳米级场效应元件。解决方案：在包括以纳米级制造在半导体衬底中的源电极S，栅电极和漏电极D的场效应元件中，处理连接源电极和漏极的半导体衬底上方的空间被处理用通式CH 3（CH 2 SB 2）表示的硫醇或二硫化物的金属微粒（SH 2 ）SH或（CH 3 < / SB>（CH 2 ）SH - ） 2（在该式中，n是3-30的整数）。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004259748A Method of manufacturing electrode of electrode-crosslinked molecular element and electrode-crosslinked molecular element having electrode structure manufactured by the method 有权
公开(公告)号：JP2004259748A
公开(公告)日：2004-09-16
申请号：JP2003045863
申请日：2003-02-24
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAITO YASUHISA , MIZUTANI WATARU , KAWANISHI YUJI
IPC分类号： H01L21/285 , H01L21/28 , H01L51/00 , H01L51/05 , H01L51/40
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing electrode of electrode-crosslinked molecular element by which an electrode structure containing a molecular-sized gap can be manufactured easily without using the electron beam lithography, and to provide an electrode-crosslinked molecular element having the electrode structure manufactured by the method.
SOLUTION: After a resist pattern 12 having a prescribed horizontal width is formed on a substrate 11 by photolithography, and first electrode layers 14a and 14b are formed on the surface of the substrate 11 so that a gap 13 having a prescribed width may be formed between the layers 14a and 14b by vapor-depositing a conductive material on the surface of the substrate 11 obliquely to the surface at an angle of θ1 (0°

9. 发明专利

JP2004067485A Method for improving conductivity of carbon nanotube 审中-公开
标题翻译：改善碳纳米管电导率的方法
公开(公告)号：JP2004067485A
公开(公告)日：2004-03-04
申请号：JP2002232723
申请日：2002-08-09
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： MIZUTANI WATARU , TOKUMOTO HIROSHI , ABE HIDEKAZU , YASUDA AYUMI
IPC分类号： B82B3/00 , C01B31/02 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for improving conductivity of carbon nanotubes by which a metal can be incorporated into the nanotube even when nanotubes are in a state of wiring between elements.
SOLUTION: The method for improving the conductivity of carbon nanotubes is carried out by heating carbon nanotubes in contact with a conductive metal under non-oxidative conditions. The metal is fixed to both ends of the carbon nanotubes.
COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2012099244A Electrode, method of manufacturing electrode, organic electroluminescent (el) device, and method of manufacturing the same device 审中-公开
标题翻译：电极，制造电极的方法，有机电致发光（EL）器件及其制造方法
公开(公告)号：JP2012099244A
公开(公告)日：2012-05-24
申请号：JP2010243725
申请日：2010-10-29
申请人： Denshikako Co Ltd , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所 , 電子化工株式会社
发明人： MIZUTANI WATARU , FUSHIKI TORU , AOBA KAZUMI , SAKAI HIDEKI , MOMOTAKE ISATO
IPC分类号： H05B33/26 , H01L51/50 , H05B33/10 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To manufacture a transparent electrode, which has the equivalent function as much as possible without using a conventional ITO, by using an inexpensive process which facilitates the increase in area and has high productivity.SOLUTION: The electrode includes a transparent electrode portion and an auxiliary electrode portion which are formed of the same material. In a coating process, the electrode is manufactured in which the uniform voltage is made to be obtained in the transparent electrode portion by being formed so that the auxiliary electrode portion is thicker and has a lower resistance value than the transparent electrode portion. Furthermore, the organic electroluminescent device (EL) is manufactured by using this electrode.

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