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    • 1. 发明专利
    • On-demand type manufacturing device
    • 需求类型制造设备
    • JP2009045706A
    • 2009-03-05
    • JP2007214759
    • 2007-08-21
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • NAKANO ZENASHIDA KIWAMUAKETO JUNBOKU SAIKAKU
    • B23Q41/02
    • PROBLEM TO BE SOLVED: To provide an on-demand type manufacturing device which enables manufacturing of a small component by a small device, and can effectively produce small amounts and multiple kinds of products.
      SOLUTION: A production line 1 is constituted by placing processing devices A, B, C, D and E in a row which are used for performing different processing, heat treatment, and inspection as shown in Fig. 1(a). After performing processing for manufacturing a specific product in sequence by using the production line 1, the production line 1 is disassembled for the production of other products as shown in (b). Then an intermediate product is manufactured by a production line 2 constituted by placing processing devices F, A, E in a row while adding additional processing device F as shown in (c). Then processing of the intermediate product is performed by a production line 3 constituted by placing processing devices D, E, C in a row. On the other hand, a second product is manufactured from the same intermediate product by processing devices C, F, B in another production line 4. The positions of installation platforms of work of each processing device are unified. Then the work is transferred to a certain position regardless of what the adjacent processing device is, and the next processing device processes it.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种能够通过小型装置制造小型部件的按需型制造装置,能够有效地生产少量和多种产品。 解决方案:生产线1通过将处理装置A,B,C,D和E放置在用于进行不同处理,热处理和检查的行中来构成,如图1所示。 1(a)。 在通过使用生产线1进行制造特定产品的处理之后,如(b)所示,生产线1被分解以生产其他产品。 然后,如(c)所示,通过将处理装置F,A,E配置成一行而添加附加处理装置F的生产线2制造中间产品。 然后,通过将处理装置D,E,C排列成一行的生产线3进行中间制品的加工。 另一方面,通过在另一条生产线4中的加工装置C,F,B由相同的中间产品制造第二产品。每个加工装置的工作安装平台的位置是统一的。 然后将工作转移到某个位置,而不管相邻的处理装置是什么,下一个处理装置处理它。 版权所有(C)2009,JPO&INPIT
    • 2. 发明专利
    • Mask pattern for fine structure formation experiment
    • 结构形态实验的掩模图
    • JP2006128706A
    • 2006-05-18
    • JP2005319845
    • 2005-11-02
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • ASHIDA KIWAMUMORITA NOBORUKAWASEKI NORITAKARYO KOKUSHIN
    • H01L21/306B82B3/00
    • PROBLEM TO BE SOLVED: To easily and accurately measure variations in the absolute height produced by etching, when experiment for collecting fundamental data such as etching rate to processing qualifications is carried out, in a processing method of forming a front surface which functions as an etching mask on a single-crystal silicon material front surface, thereafter, dissolving a portion other than the mask using an etchant after that, and forming the fine structure of nano meter scale.
      SOLUTION: In order to carry out processing for forming the fine structure of nano meter scale, by forming a front surface which functions as an etching mask by carrying out FFM processing to single-crystal silicon and very fine machining by FIB irradiation etc. or by other techniques, and dissolving a portion other than the mask using etchant after that, when experiment for collecting fundamental data on processing qualifications is carried out, the SiO
      2 a square shape mask pattern of 40 μm×40 μm for use as the reference surface of height measurement is produced near a processing portion. The etching rate of a mask portion and an etching portion can be measured accurately by referring to the reference surface. At this time, digits from 00 to 99 are produced, in advance, near the processing portion for the identification of the processing qualifications.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了容易且精确地测量通过蚀刻产生的绝对高度的变化,当进行用于收集诸如蚀刻速率到处理资格的基础数据的实验时,在形成功能的前表面的处理方法中 作为单晶硅材料前表面上的蚀刻掩模,然后,使用蚀刻剂之后,除了掩模以外的部分溶解,形成纳米级的微细结构。 解决方案:为了进行形成纳米级微细结构的处理,通过对单晶硅进行FFM处理并通过FIB照射等非常精细的加工形成用作蚀刻掩模的前表面 或通过其他技术,然后使用蚀刻剂溶解除了掩模之外的部分之后,当进行用于收集关于加工资格的基础数据的实验时,SiO 2 40μm的正方形掩模图案 在处理部附近产生用作高度测量用基准面的×40μm。 可以通过参照基准面精确地测量掩模部分和蚀刻部分的蚀刻速率。 此时,预先在处理部附近生成从00到99的数字,以识别处理资格。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Tissue piece sampling device for endoscope
    • 用于内镜的组织块采样装置
    • JP2014113211A
    • 2014-06-26
    • JP2012267630
    • 2012-12-06
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • KURITA TSUNEOASHIDA KIWAMU
    • A61B10/02A61B1/00A61B17/00
    • PROBLEM TO BE SOLVED: To increase the safety of a tissue piece sampling device for endoscope by making it possible to provide high cutting characteristics for hardened tissue pieces and flexible tissue layers and to securely take out the cut tissue piece from the body as well as to impose physical restriction to the degree of invasion of the cutting tool.SOLUTION: A tissue piece sampling device for endoscope has a drill blade (3) made of a spiral blade attached to a tip end of a wire (4) inserted into an outer cylinder part (1), an inner cylinder part (2) being inserted into the outer cylinder part (1), with a rotation stop connection made in the front side. An outer periphery of the drill blade has an external diameter substantially equal to an inner periphery of the inner cylinder part (2). A cut tissue piece is transferred to a reception pocket (6), along a spiral passage formed between a spiral groove of the drill blade (3) and an inner peripheral surface of the inner cylinder part (2) when the drill blade (3) is rotationally driven by way of the wire (4). When the reception pocket (6) is filled with tissue pieces, tissue pieces are no more transferred by the drill blade (3) to thereby suppress the cutting of tissue pieces.
    • 要解决的问题:为了提高用于内窥镜的组织片取样装置的安全性,可以为硬化的组织片和柔性组织层提供高切割特性,并且可靠地从身体取出切割的组织片,以及 对切​​削刀具的入侵程度施加物理限制。解决方案:一种内窥镜用的组织片取样装置,具有安装在插入外筒的线(4)的前端的螺旋叶片的钻刀(3) 部分(1),插入外筒部分(1)中的内筒部分(2),在前侧形成有旋转停止连接。 钻刀的外周的外径大致与内筒部(2)的内周大致相等。 当钻刀(3)被切割时,切割的组织块沿着形成在钻刀(3)的螺旋槽和内筒部(2)的内周表面之间的螺旋通道传送到接收槽(6) 通过线(4)旋转地驱动。 当接收袋(6)填充有组织块时,组织块不再被钻刀(3)转移,从而抑制组织块的切割。
    • 6. 发明专利
    • Method and device for forming microstructure
    • 用于形成微结构的方法和装置
    • JP2006073762A
    • 2006-03-16
    • JP2004254855
    • 2004-09-01
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • ASHIDA KIWAMUMORITA NOBORUKAWASEKI NORITAKAPARK JEONG-WOO
    • H01L21/306B81C1/00B82B1/00B82B3/00
    • PROBLEM TO BE SOLVED: To provide a method for forming a microstructure which enables the formation of the microstructure of a desired shape and height without a need of a photoresist process, far UV-rays radiation work, an oxidation process, etc. in microprocessing single crystal silicon by etching.
      SOLUTION: While a single silicon material is immersed in an etching liquid, the micro-mechanical processing of a given pattern is carried out on the surface of the silicon material using a frictional force microscope mechanism to form a desired mask pattern at desired timing. In this process, the height of the microstructure to be formed can be adjusted using a time difference in the formation of an etching mask. In addition, the selection of a vertical load or a feed rate or the number of repeating processes upon micro-mechanical processing changes the strength of the etching mask, allowing the adjustment of the height of a micropattern to be formed.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种用于形成微结构的方法,其能够形成所需形状和高度的微结构,而不需要光致抗蚀剂工艺,远紫外线辐射工作,氧化过程等。 在微处理单晶硅中通过蚀刻。 解决方案:当单个硅材料浸入蚀刻液体中时,使用摩擦力显微镜机构在硅材料的表面上进行给定图案的微机械加工,以在期望的方式形成期望的掩模图案 定时。 在该工序中,可以使用蚀刻掩模的形成中的时差来调整要形成的微结构体的高度。 此外,垂直载荷或进给速度的选择或微机械处理时的重复处理次数改变了蚀刻掩模的强度,从而允许调整要形成的微图案的高度。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • Mask pattern for fine structure forming experiment
    • 用于细微结构形成实验的掩模图案
    • JP2005085875A
    • 2005-03-31
    • JP2003314049
    • 2003-09-05
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • ASHIDA KIWAMUSHIBATA KOICHI
    • B81C1/00H01L21/66
    • PROBLEM TO BE SOLVED: To calculate etching rate by easily and accurately measuring change in the absolute height when calculating, with the experiment, the etching rate of the mask portion and the region other than the mask portion.
      SOLUTION: Since the processing to form a fine structure of nanometer scale is conducted by forming the surface to function as an etching mask with the FFM process and ultra-fine mechanical process with irradiation of FIB or the other method to a single-crystal silicon, and then dissolving a part other than the mask with the etchant; the square SiO
      2 mask pattern of about 40μm × 40μm as the reference surface for measuring the height is formed at the area near the processing portion for conducting the experiment to collect the basic data of the processing conditions. The etching rate of the mask and etching portions can be measured easily and accurately by referring to this reference surface. In this case, numerals of 00 to 99 are formed for identifying the processing conditions at the area near the processing portion.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:通过实验计算掩模部分和掩模部分之外的区域的蚀刻速率,通过容易且准确地测量绝对高度的变化来计算蚀刻速率。 解决方案:由于通过将FFB工艺和FIB照射的超细机械工艺形成表面作为蚀刻掩模来进行纳米尺度的精细结构的处理, 晶体硅,然后用蚀刻剂溶解除了掩模之外的部分; 作为用于测量高度的参考表面的大约40μm×40μm的正方形SiO 2 掩模图案形成在处理部分附近的区域,用于进行实验以收集处理条件的基本数据。 通过参考该参考表面,可以容易且精确地测量掩模和蚀刻部分的蚀刻速率。 在这种情况下,形成00〜99的数字,用于识别处理部附近的区域的处理条件。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Method of generating microstructure
    • 产生微结构的方法
    • JP2005064298A
    • 2005-03-10
    • JP2003293751
    • 2003-08-15
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • ASHIDA KIWAMUMORITA NOBORUKAWASEKI NORITAKARYO KOKUSHIN
    • B81C1/00H01L21/306
    • PROBLEM TO BE SOLVED: To obtain a method of microstructure generation capable of creating the microstructure of an optional shape and an optional height without requiring photoresist treatment, emitting operation of far UV, performing oxidation treatment, etc. in the case of microfabrication of single crystal silicon by etching.
      SOLUTION: When forming the micropattern of a prescribed shape by carrying out micro-machining of the prescribed shape on the surface of the single crystal silicon material by using the mechanism of a frictional force microscope and etching the material with an etch liquor, the vertical load of micro-machining part is selected optionally or a feeding amount in micro-machining is selected optionally. Thus, the height of the micropattern to be formed is adjusted without varying the density of the etching liquor.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了获得能够在微细加工的情况下产生可选形状和可选高度的微结构的微结构生成方法,而不需要光致抗蚀剂处理,远紫外发射操作,进行氧化处理等 的单晶硅。 解决方案:通过使用摩擦力显微镜的机构,用蚀刻液蚀刻该材料,在单晶硅材料的表面上进行规定形状的微加工,形成规定形状的微图案, 可选地选择微加工部件的垂直载荷,或者可选地选择微加工的进料量。 因此,在不改变蚀刻液的密度的情况下调节要形成的微图案的高度。 版权所有(C)2005,JPO&NCIPI
    • 9. 发明专利
    • Control method of spherical motor
    • 球形电机的控制方法
    • JP2014168357A
    • 2014-09-11
    • JP2013039773
    • 2013-02-28
    • National Institute Of Advanced Industrial & Technology独立行政法人産業技術総合研究所
    • KASASHIMA NAGAYOSHIYANO TOMOAKIASHIDA KIWAMU
    • H02P29/00
    • PROBLEM TO BE SOLVED: To perform control while taking account of the nonlinearity of cogging and magnetization.SOLUTION: A control method of a spherical motor includes step S1 for previously creating a cogging torque map by measuring a cogging torque vector, when a current is not fed to one electromagnet of a stator, by using the rotor position as a parameter, a step for previously creating a torque map of a torque vector by subtracting the cogging torque vector from the torque vector when a current is fed to the electromagnet, step S2 for calculating the torque vector T required for movement of a rotor from a current position to a target position, step S3 for calculating the cogging torque Tc generated at the current rotor position with reference to the torque map, step S4 for calculating a torque Ej required for each coil to generate T-Tc by removing the cogging torque component, and step S5 for calculating a current being fed to the electromagnet in order to generate the Ej with reference to the torque map.
    • 要解决的问题:考虑到齿槽和磁化的非线性来执行控制。解决方案:球面电动机的控制方法包括步骤S1,用于通过测量齿槽转矩矢量来预先产生齿槽转矩图,当电流不是 通过使用转子位置作为参数,馈送到定子的一个电磁体;步骤S2,用于通过从电流被馈送到电磁体的扭矩矢量中减去齿槽转矩矢量来预先产生转矩矢量的转矩图;步骤S2 用于计算转子从当前位置移动到目标位置所需的扭矩向量T;步骤S3,用于计算在当前转子位置处参考扭矩图生成的齿槽转矩Tc;步骤S4,用于计算所需的扭矩Ej 对于每个线圈通过去除齿槽转矩分量来产生T-Tc,以及步骤S5,用于计算馈送到电磁体的电流,以便用ref产生Ej 转向扭矩图。