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    • 2. 发明专利
    • VACUUM DEPOSITION DEVICE
    • JPS61270371A
    • 1986-11-29
    • JP11019985
    • 1985-05-24
    • MITSUBISHI HEAVY IND LTDNISSHIN STEEL CO LTD
    • SHIMOZATO YOSHIOYANAGI KENICHIKATO MITSUOFURUKAWA HEIZABUROTSUKIJI NORIOAIKO TAKUYAITO TAKEHIKO
    • C23C14/56
    • PURPOSE:To make uniform the film thickness distribution in the transverse direction by providing a control plate which can change optionally the vapor deposition area by moving along the progressing direction of an object for vapor deposition to a channel outlet connecting an evaporation vessel and the object for vapor deposition. CONSTITUTION:The vapor 10 emitted from the surface of the molten metal in the evaporation chamber 3 in a vapor deposition chamber 2 flows out through a shutter 7 to a channel 6 and deposits on a thin metallic sheet 5 which is the object for vapor deposition and is wound on a roll 9 in the outlet part of the channel. The control plate P for the vapor deposition rate which can change optionally the vapor deposition rate to the sheet 5 by changing the outlet area of the channel 6 is provided between the outlet of the channel 6 and the sheet 5. The plate P can be advanced into and retreated from the channel 6 by the engagement of a pinion S and a rack R when a shaft 11 is rotated. The pressure in the channel is maintained under the pressure adequate for the pressure in the vacuum vessel if the position of the plate P is selected. The film thickness is thus uniformly distributed in the transverse direction of the thin sheet.
    • 3. 发明专利
    • Method and device for plating by vacuum deposition
    • 通过真空沉积法沉积的方法和装置
    • JPS6173880A
    • 1986-04-16
    • JP19257484
    • 1984-09-17
    • Mitsubishi Heavy Ind LtdNisshin Steel Co Ltd
    • FURUKAWA HEIZABUROWAKE KANJISHIMOZATO YOSHIOYANAGI KENICHIKATO MITSUOWADA TETSUYOSHITSUKIJI NORIOAIKO TAKUYAKIKKO TOSHIHARUNAKANISHI KOJI
    • C21D9/56C23C14/56
    • C21D9/561C21D9/565C23C14/562
    • PURPOSE:To obtain a plated product having good film strength by providing nitrogen replacing chambers between an annealing furnace and vacuum sealing devices and controlling the pressure and hydrogen concn. in the nitrogen replacing chambers. CONSTITUTION:The inlet side nitrogen replacing chamber 3 is provided between the inlet side vacuum sealing device 5 in front of a vacuum deposition chamber 7 of a plating device by vacuum deposition and the annealing furnace 2. The outlet side nitrogen replacing chamber 8 is provided between the outlet side vacuum sealing device 5 behind the chamber 7 and the atm. A circulating and refining device 12 for gaseous N2 which circulates the gaseous N2 from the devices 5 toward the chambers 9 and removes the water, oil and oxygen in the gaseous N2 is provided between both vacuum sealing devices and the chambers 9 under the atmospheric pressure of both vacuum sealing devices. The pressure P1 in the furnace 2 is controlled to the atmospheric pressure or above, the pressure P2 of the chamber 3 to the atmospheric pressure or above and the pressure P3 of the chamber 8 to the atmospheric pressure or above to satisfy the equation. The hydrogen concn. in the chamber 3 is con trolled to
    • 目的:通过在退火炉和真空密封装置之间提供氮气置换室并控制压力和氢气浓度,以获得具有良好膜强度的镀层产品。 在氮气置换室中。 构成:入口侧氮气置换室3通过真空蒸镀在电镀装置的真空蒸镀室7前方的入口侧真空密封装置5与退火炉2之间设置。出口侧氮气置换室8设置在 出口侧真空密封装置5在室7后面。 用于气态N 2的循环和精炼装置12,其将气态N 2从装置5循环到室9,并且除去气态N 2中的水,油和氧,在两个真空密封装置和室9之间在大气压力 两个真空密封装置。 将炉2中的压力P1控制在大气压以上,将室3的压力P2设定为大气压以上,将室8的压力P3设定为大气压以上,以满足上述等式。 氢气 在室3中被控制到<= 20%。
    • 5. 发明专利
    • METHOD FOR SUPPLYING ZINC TO VACUUM DEPOSITION DEVICE FOR ZINC
    • JPS60100663A
    • 1985-06-04
    • JP20601783
    • 1983-11-04
    • MITSUBISHI HEAVY IND LTDNISSHIN STEEL CO LTD
    • SHIMOZATO YOSHIOITANO SHIGEOTSUKIJI NORIOAIKOU TAKUYA
    • C23C14/14C23C14/24
    • PURPOSE:To prevent a suction pipe for molten Zn and an evaporating pan from being eroded by Zn in the stage of supplying molten Zn to a vacuum deposition chamber for Zn by filling preliminarily the molten Pb into said suction pipe and the Zn evaporating pan above said pipe and supplying the molten Zn through the inside thereof to the evaporation chamber. CONSTITUTION:Molten Zn 4 is sucked up and supplied through a suction pipe 7 from a Zn melting furnace 5 into an evaporating pan 8 in the stage of depositing by evaporation the molten Zn in the pan 8 onto the surface of a steel strip 1 which is continuously supported by the revolution of the support roll 3 in a vacuum evaporation chamber 2. The molten Pb 11 in the melting furnace 5 is preliminarily filled into the pan 8 and pipe 7 in this stage. A partition wall 5-1 to separate the molten Pb 11 and the molten Zn 4 is provided to enclose the pipe 7 and an inflow port 7-1 is provided on the Zn side (a) thereof. The molten Zn 4 is supplied to (a) from which the molten Zn is admitted through the port 7-1 into the molten Pb 11, is passed therethrough and is supplied to the pan 8 from the pipe 7 by the difference of specific gravities. Since the molten Zn does not contact with the pipe 7 and the pan 8, the pipe and pan are prevented from being eroded by the molten Zn.
    • 7. 发明专利
    • Detection of quantity of metallic vapor to be stuck for vacuum evaporation device
    • 检测真空蒸发器的金属蒸汽量
    • JPS61119671A
    • 1986-06-06
    • JP24043184
    • 1984-11-16
    • Mitsubishi Heavy Ind LtdNisshin Steel Co Ltd
    • TAUCHI KUNIAKIYANAGI KENICHIKATO MITSUOFURUKAWA HEIZABUROSEKIGUCHI YASUAKITSUKIJI NORIOAIKO TAKUYAKIKKO TOSHIHARUNAKANISHI KOJI
    • C23C14/54C23C14/56
    • C23C14/54
    • PURPOSE:To detect exactly the vapor deposition quantity of a metal without using a costly detector for the vapor deposition quantity of the metal in the stage of evaporating metallic vapor to the surface of a traveling strip by detecting the strip temp. at the inlet and outlet of a vapor deposition device and calculating and determining the vapor deposition quantity of the metal by a calculator. CONSTITUTION:The vapor of the molten metal 1 in a bath vessel 2 is admitted through a vapor flow port 19 into a duct 6 and the evaporating metal is deposited on the surface of the strip 7 passing continuously in proximity to the aperture thereof. The inlet temp. and outlet temp. of the strip 7 are respectively measured by thermometers 41, 42. The measured values are inputted to the calculator 43 and the metal quantity Qd deposited by evaporation on the strip 7 is calculated and determined by equation. In equation (1), rs is the specific gravity of the strip, (d) is the thickness thereof, Cs is the specific heat, Tsin, Tsout are respectively the inlet and outlet temps. of the strip and H is the latent heat of vapor deposition.
    • 目的:通过检测带材温度,在金属蒸气蒸发到移动带表面的阶段,无需使用昂贵的检测器来精确检测金属的气相沉积量。 在气相沉积装置的入口和出口处,并通过计算器计算和确定金属的气相沉积量。 构成:熔池2中的熔融金属1的蒸汽通过蒸气流入口19进入管道6中,并且蒸发金属沉积在条带7的表面上,其连续通过其孔径。 入口温度 和出口温度 条带7分别由温度计41,42测量。测量值被输入到计算器43,通过蒸发沉积在条带7上的金属量Qd被计算并由等式确定。 在式(1)中,rs是条带的比重,(d)是其厚度,Cs是比热,Tsin,Tsout分别是入口和出口温度。 的条带,H是蒸气沉积的潜热。