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    • 6. 发明专利
    • Method and device for plating by vacuum deposition
    • 通过真空沉积法沉积的方法和装置
    • JPS6173880A
    • 1986-04-16
    • JP19257484
    • 1984-09-17
    • Mitsubishi Heavy Ind LtdNisshin Steel Co Ltd
    • FURUKAWA HEIZABUROWAKE KANJISHIMOZATO YOSHIOYANAGI KENICHIKATO MITSUOWADA TETSUYOSHITSUKIJI NORIOAIKO TAKUYAKIKKO TOSHIHARUNAKANISHI KOJI
    • C21D9/56C23C14/56
    • C21D9/561C21D9/565C23C14/562
    • PURPOSE:To obtain a plated product having good film strength by providing nitrogen replacing chambers between an annealing furnace and vacuum sealing devices and controlling the pressure and hydrogen concn. in the nitrogen replacing chambers. CONSTITUTION:The inlet side nitrogen replacing chamber 3 is provided between the inlet side vacuum sealing device 5 in front of a vacuum deposition chamber 7 of a plating device by vacuum deposition and the annealing furnace 2. The outlet side nitrogen replacing chamber 8 is provided between the outlet side vacuum sealing device 5 behind the chamber 7 and the atm. A circulating and refining device 12 for gaseous N2 which circulates the gaseous N2 from the devices 5 toward the chambers 9 and removes the water, oil and oxygen in the gaseous N2 is provided between both vacuum sealing devices and the chambers 9 under the atmospheric pressure of both vacuum sealing devices. The pressure P1 in the furnace 2 is controlled to the atmospheric pressure or above, the pressure P2 of the chamber 3 to the atmospheric pressure or above and the pressure P3 of the chamber 8 to the atmospheric pressure or above to satisfy the equation. The hydrogen concn. in the chamber 3 is con trolled to
    • 目的:通过在退火炉和真空密封装置之间提供氮气置换室并控制压力和氢气浓度,以获得具有良好膜强度的镀层产品。 在氮气置换室中。 构成:入口侧氮气置换室3通过真空蒸镀在电镀装置的真空蒸镀室7前方的入口侧真空密封装置5与退火炉2之间设置。出口侧氮气置换室8设置在 出口侧真空密封装置5在室7后面。 用于气态N 2的循环和精炼装置12,其将气态N 2从装置5循环到室9,并且除去气态N 2中的水,油和氧,在两个真空密封装置和室9之间在大气压力 两个真空密封装置。 将炉2中的压力P1控制在大气压以上,将室3的压力P2设定为大气压以上,将室8的压力P3设定为大气压以上,以满足上述等式。 氢气 在室3中被控制到<= 20%。