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1. 发明专利

JPS61229896A PRODUCTION OF DES-N-METHYLERYTHROMYCIN DERIVATIVE 失效
公开(公告)号：JPS61229896A
公开(公告)日：1986-10-14
申请号：JP6919385
申请日：1985-04-03
申请人： NIPPON ZEON CO , TAISHO PHARMA CO LTD
发明人： YAMADA TOSHIRO , KOBAYASHI MASASHI , SASAMOTO MASAAKI , MORIMOTO SHIGEO , ADACHI TAKASHI , WATANABE YOSHIAKI
IPC分类号： C07H17/08 , B01J25/00 , B01J27/13 , B01J31/00 , B01J31/02 , B01J31/16 , C07B61/00
摘要： PURPOSE:To obtain the titled compound useful as an antibacterial agent, with simple procedure in high yield, by using a specific protected des-N- methylerythromycin derivative as a starting raw material and contacting the derivative with a platinum-group metal compound in the presence of formic acid, thereby eliminating the protecting group from the derivative. CONSTITUTION:The protected des-N-methylerythromycin derivative of formula I (R1 is H or OH; R2 and R4 are H or lower alkyl; R3 is lower alkyl; R5-R7 are 2-alkenyl-type residue) used as a starting raw material is made to contact with a platinum-group metal compound catalyst in the presence of formic acid (salt) (preferably organic amine salt of formic acid, such as diethylamine formate) preferably at 50-150 deg.C usually for 5min-24hr. The deprotection reaction takes place to give the objective compound of formula II. Preferably, a bivalent organic Pd compound such as palladium acetate is used as the above platinum-group metal compound catalyst in combination with a ligand such as triphenylphosphine, etc.

2. 发明专利

JPS61229895A PROTECTED DES-N-METHYLERYTHROMYCIN DERIVATIVE 失效
公开(公告)号：JPS61229895A
公开(公告)日：1986-10-14
申请号：JP6919285
申请日：1985-04-03
申请人： NIPPON ZEON CO , TAISHO PHARMA CO LTD
发明人： YAMADA TOSHIRO , FUJISAWA HIROSHI , GOTO KUNIAKI , MORIMOTO SHIGEO , ADACHI TAKASHI , WATANABE YOSHIAKI
IPC分类号： C07H17/08
摘要： NEW MATERIAL:The compound of formula (R1 is H or OH; R2-R4 are 2- alkenyl-type residue). EXAMPLE:2'-O, N-diallyloxycarbonyl-des-N-methyl-9-allyloxyimino-9-deoxoeryth romycin A. USE:A synthetic intermediate for chemically modified erythromycin derivative. It has excellent stability and all of the protecting groups can be eliminated by single stage reaction under neutral condition. PREPARATION:For example, the oxime of erythromycin A is made to react with a 2-alkenylation agent such as allyl bromide in an aprotic polar solvent such as DMF, etc., in the presence of a base such as KOH, and the obtained 2-alkenylated product is made to react with a 2-alkenyloxycarbonylation agent such as allyl chloroformate in a polar solvent such as acetone in the presence of a base such as sodium bicarbonate.

3. 发明专利

JP2005239596A Method for purifying unsaturated fluorinated carbon compound 审中-公开
标题翻译：净化不饱和氟化碳化合物的方法
公开(公告)号：JP2005239596A
公开(公告)日：2005-09-08
申请号：JP2004048973
申请日：2004-02-25
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGAWARA MITSURU , SUGIMOTO TATSUYA , YAMADA TOSHIRO
IPC分类号： C07C17/38 , C07C17/389 , C07C21/22 , C07C23/08
摘要： PROBLEM TO BE SOLVED: To provide a technique for extremely reducing inorganic impurities in an unsaturated fluorinated carbon compound since more reduction in impurities in raw material gas is required in the field of semiconductor production, electronic and electric parts, etc.
SOLUTION: An unsaturated fluorinated carbon compound having extremely reduced inorganic impurities such as nitrogen, oxygen, etc., is obtained by packing an unsaturated fluorinated carbon compound into a pressure vessel such as a cylinder, etc., and extracting gas from a vapor-phase part in a state compressed to specific pressure or above. Preferably the unsaturated fluorinated carbon compound is brought into contact with a calcined metal oxide besides the gas extraction operation from the vapor-phase part. The water content in the unsaturated fluorinated carbon compound is extremely reduced by bringing the compound into contact with the calcined metal oxide.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在不饱和氟化碳化合物中极度降低无机杂质的技术，因为在半导体生产领域中需要更多的原料气体杂质的减少，电子和电气部件等。
解决方案：通过将不饱和氟化碳化合物填充到诸如气缸等的压力容器中而获得具有极低的无机杂质如氮气，氧气等的不饱和氟化碳化合物，相位部分处于压缩至特定压力或以上的状态。除了来自气相部分的气体提取操作之外，优选使不饱和氟化碳化合物与煅烧金属氧化物接触。通过使化合物与煅烧的金属氧化物接触，使不饱和氟化碳化合物中的水分含量极度降低。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2003282538A Gas for plasma reaction and producing method therefor 有权
标题翻译：用于等离子体反应的气体及其生产方法
公开(公告)号：JP2003282538A
公开(公告)日：2003-10-03
申请号：JP2002081893
申请日：2002-03-22
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGAWARA MITSURU , YAMADA TOSHIRO , SUGIMOTO TATSUYA , TANAKA KIMIAKI
IPC分类号： H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide gas for plasma reaction which has high selectivity with respect to a material to be etched, and to provide a producing method therefor.
SOLUTION: Gas containing chain perfluoroalkane whose number of carbons is 5 or 6 is used for dry etching. It is desirable that the content of chain perfluoroalkane is not less than 99.9% by volume with respect to the total amount of gas for plasma reaction. For the producing method of gas for plasma reaction, reaction rough products containing chain perfluoroalkane are refined in an inert gas of a group 0.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供对待蚀刻材料具有高选择性的等离子体反应气体，并提供其制备方法。解决方案：使用碳数为5或6的含有链全氟烷烃的气体用于干蚀刻。链状全氟烷烃的含量相对于等离子体反应用气体的总量优选为99.9体积％以上。对于等离子体反应气体的制造方法，含有链全氟烷烃的反应粗产物在0组的惰性气体中精制。版权所有（C）2004，JPO

5. 发明专利

JP2003146917A METHOD FOR PRODUCING PERFLUOROALKYNE COMPOUND 审中-公开
公开(公告)号：JP2003146917A
公开(公告)日：2003-05-21
申请号：JP2001342791
申请日：2001-11-08
申请人： NIPPON ZEON CO
发明人： SUGAWARA MITSURU , YAMADA TOSHIRO , SUGIMOTO TATSUYA
IPC分类号： C07C17/23 , C07C17/383 , C07C21/22
摘要： PROBLEM TO BE SOLVED: To efficiently and profitably produce a highly pure perfluoroalkyne compound. SOLUTION: This method for producing the perfluoroalkyne compound is characterized by bringing a dihydrofluoroalkane compound represented by formula 1: R -CHF-CHF-R and/or a monohydrofluoroalkene compound represented by formula 2: R -CX=CY-R (R and R are each identically or differently a 1 to 6C perfluoroalkyl; one of X and Y is H, and the other is F) into contact with a basic compound.

6. 发明专利

JP2002256295A CLEANING METHOD 失效
公开(公告)号：JP2002256295A
公开(公告)日：2002-09-11
申请号：JP2001053540
申请日：2001-02-28
申请人： NIPPON ZEON CO
发明人： SUGIMOTO TATSUYA , KIYAMA HARUYUKI , SUZUKI TAKEFUMI , YAMADA TOSHIRO
IPC分类号： B08B3/08 , C11D7/24 , C11D7/30 , C11D7/50
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method generally applicable to various kinds of materials to be cleaned, giving no opposite effect, especially on precision electronic electric parts, not only giving good cleaning effect but also improving drying property of the material, and leaving no smell generated from the cleaning agent. SOLUTION: The cleaning method comprises the first cleaning process in which a material to be cleaned is washed with a cleaning agent (A) containing at least tetrahydrodicyclopentadiene and the second cleaning process in which the material having the cleaning agent (A) attached on it through the first cleaning process is washed with a cleaning agent (B) containing at least a fluorinated hydrocarbon.

7. 发明专利

JPH10189553A DRYETCHING METHOD 失效
公开(公告)号：JPH10189553A
公开(公告)日：1998-07-21
申请号：JP31290697
申请日：1997-10-30
申请人： AGENCY IND SCIENCE TECHN , KIKAI SYST SHINKO KYOKAI , NIPPON DENSHI KIKAI KOGYOKAI , NIPPON ZEON CO
发明人： SEKIYA AKIRA , YAMADA TOSHIRO , GOTO KUNIAKI , TAKAGAKI TETSUYA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide the high selectivity for protective films such as photoresist and polysilicon, etc., also making feasible of the rapid etching by a method wherein the etching step is performed without controlling the attainable temperature of an etched base substance using a dry etching gas containing perfluorocycloolefin. SOLUTION: The dry etching gas containing perfluorocycloolefin may be a producing source of fluorine radical from a plasma in the dry etching step. Especially, the etching step is performed without substantially controlling the attainable temperature of the etched base substance, that is, at the temperature not exceeding ±30% of the attainable temperature of the etched base substance under no control at all. Through these procedures, the title dry etching method is provided with the high polysilicon selectively and the high photoresist selectivity also making it possible to perform rapid etching step.

8. 发明专利

JPH0454654B2 失效
公开(公告)号：JPH0454654B2
公开(公告)日：1992-08-31
申请号：JP14149083
申请日：1983-08-02
申请人： NIPPON ZEON CO
发明人： KATAOKA HIDEAKI , YAMADA TOSHIRO , GOTO KUNIAKI , TSUJI JIRO
IPC分类号： C07C47/38 , B01J31/00 , B01J31/04 , B01J31/24 , C07B61/00 , C07C45/00 , C07C45/51 , C07C47/42 , C07C49/527 , C07C49/603 , C07C67/00

9. 发明专利

JPS644503B2 失效
公开(公告)号：JPS644503B2
公开(公告)日：1989-01-25
申请号：JP14148983
申请日：1983-08-02
申请人： NIPPON ZEON CO
发明人： KATAOKA HIDEAKI , YAMADA TOSHIRO , GOTO KUNIAKI , TSUJI JIRO
IPC分类号： C07C69/738 , B01J31/04 , B01J31/22 , B01J31/24 , C07B61/00 , C07C45/65 , C07C49/20 , C07C49/587

10. 发明专利

JP2005041836A Method for producing 2-oxabicyclo-[3, 3, 0]-1-octene comound 审中-公开
标题翻译：用于生产2-氧杂环辛烯 - [3,3,0] -1-戊烯的方法
公开(公告)号：JP2005041836A
公开(公告)日：2005-02-17
申请号：JP2003279196
申请日：2003-07-24
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： NAKANO YASUYUKI , SAKAMOTO KEI , YAMADA TOSHIRO , NEMOTO HISAO
IPC分类号： C07D307/93 , C07B61/00
摘要： PROBLEM TO BE SOLVED: To provide an industrially advantageous method for producing 2-oxabicyclo-[3,3,0]-1-octene compound.
SOLUTION: A 2-oxabicyclo-[3,3,0]-octane compound represented by formula (1) (wherein, R
1 to R
10 are each independently hydrogen or a 1-20C alkyl group which may have a substituent; R
11 is a 1-20C alkyl group which may have a substituent, a 2-20C alkenyl group which may have a substituent or a 6-20C aryl group which may have a substituent; and R
12 is a hydrocarbon group which may have a substituent) is reacted in the presence of α-hydroxy esters and an acid catalyst.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供工业上有益的2-氧杂二环[3,3,0] -1-辛烯化合物的制备方法。解决方案：由式（1）表示的2-氧杂双环[3,3,0] - 辛烷化合物（其中R 1和R 10各自独立地选自独立地是氢或可以具有取代基的1-20C烷基; R 11是可以具有取代基的1-20C烷基，可以具有取代基的2-20C烯基或可以具有取代基的6-20℃芳基; R 12是可以具有取代基的烃基）在α-羟基酯和酸催化剂的存在下反应。版权所有（C）2005，JPO＆NCIPI

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