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1. 发明专利

JPS6257273B2 失效
公开(公告)号：JPS6257273B2
公开(公告)日：1987-11-30
申请号：JP12157781
申请日：1981-08-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MICHIGAMI OSAMU , KATO JUJIRO , TANABE KEIICHI , TAKENAKA HISATAKA , YOSHII SHIZUKA
IPC分类号： H01L39/24

2. 发明专利

JPS5821881A MANUFACTURE OF TUNNEL TYPE JOSEPHSON JUNCTION ELEMENT 失效
公开(公告)号：JPS5821881A
公开(公告)日：1983-02-08
申请号：JP12157781
申请日：1981-08-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MICHIGAMI OSAMU , KATOU YUUJIROU , TANABE KEIICHI , TAKENAKA HISATAKA , YOSHII SHIZUKA
IPC分类号： H01L39/24
摘要： PURPOSE:To form an Al2O3 of low dielectric constant and high quality by sputtering Nb-Al compound thin film with special gas of special pressure before forming a tunnel barrier layer, thereby forming an Al-rich layer and then oxidizing directly the compound. CONSTITUTION:When an Nb-Al superconductive thin film is sputtered in a single gas of C2F6, C3F8 or C4F10 or in the gas of at least two or more of CR4, C2F6 and C4F10 at the pressure of 0.5-0.005Torr, an Al-rich layer is formed on the Nb-Al superconductive thin film surface due to the difference of the sputtering rate of the Al and the Nb. When the surfaces of these elements are oxidized, an Al2O3 tunnel barrier layer having low dielectric constant is formed. In order to form the surface layer of Al-rich at this time, the sputtering velocity is accelerated for the Nb, and is decelerated reversely for the Al, thereby sputtering the compound.

3. 发明专利

JPS57211286A MANUFACTURE OF JOSEPHSON JUNCTION ELEMENT 失效
公开(公告)号：JPS57211286A
公开(公告)日：1982-12-25
申请号：JP9612981
申请日：1981-06-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MICHIGAMI OSAMU , KATOU YUUJIROU , TANABE KEIICHI , YOSHII SHIZUKA , TAKENAKA HISATAKA
IPC分类号： H01L39/24
摘要： PURPOSE:To obtain a Josephson junction element, the speed of operation thereof is fast, by forming a first superconductive layer consisting of an Nb-Al alloy according to a predetermined pattern onto a substrate and shaping a barrier layer through sputtering treatment in which CF4 gas is used and gas pressure is specified. CONSTITUTION:The substrate 1 consisting of an Si layer, the surface thereof has an oxide film, or sapphire or the like is coated with the first superconductive layer 2 made of an Nb-Al alloy containing approximately 75% Sb and approximately 25% Al alloy in prescried pattern form by using a mask through sputtering. A section in the vicinity of the end section of the layer 2 is coated with a mask, and a layer 3 in which Al is enriched is shaped to the section extending over the side surface from the surface of the layer 2 exposed through sputtering treatment employing CF4 gas under the gas pressure of 0.005-0.5 Torr extending over the side surface from the surface of the layer 2 exposed. The layer 3 is changed into an Al2O3 barrier layer 4, a dielectric constant thereof is extremely low, through oxidizing treatment, and the second superconductive layer 5 composed of Pb, etc. is attached extending over the exposed section of the substrate 1 while coating the layer 4.

4. 发明专利

JPS58140172A MANUFACTURE OF TUNNEL TYPE JOSEPHSON JUNCTION ELEMENT 失效
公开(公告)号：JPS58140172A
公开(公告)日：1983-08-19
申请号：JP2419482
申请日：1982-02-16
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KATOU YUUJIROU , MICHIGAMI OSAMU , TANABE KEIICHI , TAKENAKA HISATAKA , YOSHII SHIZUKA
IPC分类号： H01L39/24
摘要： PURPOSE:To obtain the tunnel type characteristics having excellent voltage-to- current characteristics by a method wherein an Nb2O2 tunnel barrier layer is formed by performing a high frequency discharge in the mixed gas atmosphere of Ar, CF4 and O2. CONSTITUTION:A second superconductive layer is faced first superconductive layer of Nb through the inermediary of a tunnel barrier layer. Said tunnel barrier layer is formed on the first superconductive layer in the atmosphere of gas pressure of 5-50mTorr of the mixed gas of Ar, CF4 and O2 (having the mixing ratio of 3-20vol% of CF4 gas and 0.5-10vol% of O2 gas for the mixed gas) by performing a high frequency discharge wherein self-biasing voltage of 50-400V is used.

5. 发明专利

JPS5827385A MANUFACTURE OF JOSEPHSON ELEMENT 失效
公开(公告)号：JPS5827385A
公开(公告)日：1983-02-18
申请号：JP12545581
申请日：1981-08-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MICHIGAMI OSAMU , TAKENAKA HISATAKA , TANABE KEIICHI , KATOU YUUJIROU , YOSHII SHIZUKA
IPC分类号： H01L39/24
摘要： PURPOSE:To obtain a high reliability and high speed Josephson element by forming a V3Si amorphous layer on the surface of the V3Si compound thin film primary electrode and oxidizing the upper layer of the amorphous layer, thereby forming a stable tunnel barrier layer. CONSTITUTION:After a V3Si compound thin film primary electrode 12 (A15 phase with good crystallinity) is covered by sputtering on a substrate 11 (e.g., a thermally oxidized Si substrate), a non-superconductive complete amorphous V3Si thin film 13 which exhibits high resistance is formed with good controllability by a DC magnetron sputtering method. Subsequently, the surface of the amorphous V3Si is cleaned by sputtering, and the upper layer of the film 13 is then oxidized, thereby forming a tunnel barrier layer 14. Subsequently, an upper electrode 15(Pb, Nb, NbN or the like) is formed on the layer, and a Josephson element is formed.

6. 发明专利

JPS57183614A VERTICAL MAGNETIC RECORDING HEAD 失效
公开(公告)号：JPS57183614A
公开(公告)日：1982-11-12
申请号：JP6895581
申请日：1981-05-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HATAKEYAMA IWAO , YOSHII SHIZUKA
IPC分类号： G11B5/127
摘要： PURPOSE:To realize the recording with ultrahigh density for a vertical recording medium, by providing the same polarity to the two head cores which are opposite to each other and having minute gaps and forming a sharp magnetic flux distribution by making use of the repulsion caused between the same polarities. CONSTITUTION:A coil 6.2 is wound around a head core 6.1, and a head gap 6.3 is formed. At the same time, a reproducing coil 6.6 is wound around the core 6.1 to detect the change of magnetization within the magnetic pole. The coil 6.2 is energized so that a magnetic pole of the same polarity is formed on the core surface at the gap 6.3. The magnetic fluxes at the inside and the outside of the core are shown by the dotted lines in the figure and have the mutual repulsion to be converged at the gap 6.3. A part of the magnetic flux flows to the opposite side to the gap 6.3 to form a closed magnetic path, and another part of the magnetic flux goes toward a vertical recording medium 2.1. In addition, a magnetic core 8.1 is provided at the position near the gap 6.3, and the magnetic fluxes shown by the dotted lines are generated by a coil 8.2 wound around the core 8.1. As a result, the quantity of leakage toward the medium 2.1 can be increased for the magnetic flux generated at the gap 6.3.

7. 发明专利

JPS53136967A DRY ETCHING METHOD FOR SILICON OXIDE FILM ON SILICON SUBSTRATE 失效
公开(公告)号：JPS53136967A
公开(公告)日：1978-11-29
申请号：JP5138577
申请日：1977-05-04
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OJIMA MASAHARU , YOSHII SHIZUKA , KIZAWA KAZUMASA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To ensure a dry etching of SiO2 on the Si substrate by controlling the supply voltage to the reaction system or stopping the gas supply by means of the electric signal which shows the intensity of the SiF-group exhaustion gas of the reaction system.

8. 发明专利

JPS5364636A DRY ETCHING DEVICE 失效
公开(公告)号：JPS5364636A
公开(公告)日：1978-06-09
申请号：JP13955476
申请日：1976-11-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OJIMA MASAHARU , KIZAWA KAZUMASA , YOSHII SHIZUKA
IPC分类号： C23F4/00 , C23F1/00 , H01L21/302 , H01L21/3065 , H05K3/06 , H05K3/08

9. 发明专利

JPS5256957A LIQUID CRYSTAL DISPLAY PANEL 失效
公开(公告)号：JPS5256957A
公开(公告)日：1977-05-10
申请号：JP13353875
申请日：1975-11-05
申请人： NIPPON ELECTRIC CO , NIPPON TELEGRAPH & TELEPHONE
发明人： NAEMURA SHIYOUHEI , SAITOU FUJIO , YOSHII SHIZUKA
IPC分类号： G02F1/1339
摘要： PURPOSE:To hold two electrode substrates at a regular interval by bonding them through an adhesive ink layer including a multiplicity of particles which have a smaller particle size and which are printed on one of the substrates by screen printing process.

10. 发明专利

JPS6347153B2 失效
公开(公告)号：JPS6347153B2
公开(公告)日：1988-09-20
申请号：JP12157881
申请日：1981-08-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKENAKA HISATAKA , MICHIGAMI OSAMU , KATO JUJIRO , TANABE KEIICHI , YOSHII SHIZUKA
IPC分类号： H01L39/24

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