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1. 发明专利

JPH0537048A SOLID PULSE LASER SYSTEM 失效
公开(公告)号：JPH0537048A
公开(公告)日：1993-02-12
申请号：JP18780991
申请日：1991-07-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MAHESHIYU JIYUNAKAA , YAMAGUCHI EIICHI , OTSUKA KENJU
IPC分类号： H01S3/08 , H01S3/0943 , H01S3/098 , H01S3/105
摘要： PURPOSE:To obtain a stable ultrashort pulse by a method wherein a polarizing compensator and a pair of prisms are added between one of mirrors and a laser medium within a pulse resonator. CONSTITUTION:This embodiment comprises an argon laser 1 as an exciting light source and a pulse resonator The pulse resonator comprises a titanium sapphire laser consisting of a titanium sapphire crystal 2, a polarizing compensator 3 (for example, a 1/4 wavelength plate and a 1/2 wavelength plate), convex mirrors 4, 4', a plane mirror 5, a laser radiating mirror 6, a wavelength selection element 7, and a pair of phase compensating prisms 8. When the pulse resonator is excited by the argon laser, either a solution beam or a continuous beam can be produced by the titanium sapphire crystal 2. Thus, a stable ultrashort pulse can be obtained.

2. 发明专利

JPH04186060A HEATING METHOD 失效
公开(公告)号：JPH04186060A
公开(公告)日：1992-07-02
申请号：JP31264890
申请日：1990-11-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , NISHIOKA TAKASHI
IPC分类号： F24J3/00 , C01B3/00 , C25B1/02 , F25B17/12 , G21B1/00 , G21B3/00
摘要： PURPOSE:To obtain a heat generating method which is the same as a conventional method by using hydrogen which is extremely cheaper than heavy hydrogen by a method wherein heat is generated by applying potential gradient between both surfaces of a plate shaped body, for which one surface of a hydrogen occlusion plate is covered with a thin film, the hydrogen atom diffusion constant of which is small. CONSTITUTION:A sample, for which on one surface of a hydrogen occlusion palladium plate 1, an oxide or nitride thin film 2 is adhered, is held at the boundary between a hydrogen gas chamber 3 and a vacuum chamber 4 through O rings 5. The vacuum chamber 4 is isolated from the hydrogen chamber 3 by the sample and O rings, and becomes dischargeable at a high vacuum, by a turbo molecular pump 6. Heat reaction is generated by applying potential from a voltage source 7, between both surfaces of the hydrogen occlusion palladium plate 1. As the thin film 2, a film of which the hydrogen atom diffusion constant is small, such as a film of aluminum oxide, manganese oxide, silicon oxide, aluminum nitride or silicon nitride, etc., is usable, and it is adhered on the surface of the palladium plate by a thickness of approximately 100-2000Angstrom , by the vapor-deposition process.

3. 发明专利

JPH03183987A METHOD AND DEVICE FOR LOW-TEMPERATURE NUCLEAR FUSION REACTION 失效
公开(公告)号：JPH03183987A
公开(公告)日：1991-08-09
申请号：JP32266289
申请日：1989-12-14
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , NISHIOKA TAKASHI
IPC分类号： G21B3/00 , G21B1/00
摘要： PURPOSE:To improve the efficiency of a nuclear fusion reaction by impressing different deuterium pressure gradients to the surface of the sample of a palladium plate coated with a thin film having a small deuterium atom diffusion coefft. to accumulate deuteri um atoms at the boundary between this sample and the thin film. CONSTITUTION:After the pressure in a vacuum chamber 6 is reduced down to about Torr by a turbo molecular pump 7, gaseous deuterium (D2) is introduced under about 1 to 40 atm into a gaseous D2 chamber 1. The effect of promoting the diffusion directivity of the deuterium (D) atoms is enhanced when a voltage is impressed to the sample 4 by a DC voltage source 2. The surface of the sample 4 is then heated up by an IR heater 3. The heating temp. is confined up to about 300 deg.C when the sample 4 is Pd and up to about 600 deg.C in the case of Ti. The gaseous D2 introduced into the chamber 1 is occluded in the sample 4 and the D atoms occluded in the sample 4 are diffused toward the thin film 5 side of the sample 4 by the pressure gradient generated by the pressure difference between the chamber 1 and the vacuum chamber 6. The heating up of the sample 4 promotes the directivity of the D atm diffusion similar to the impression of the DC voltage.

4. 发明专利

JPH11212125A METHOD AND DEVICE FOR COMPRESSING OPTICAL PULSE 失效
公开(公告)号：JPH11212125A
公开(公告)日：1999-08-06
申请号：JP1651298
申请日：1998-01-29
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MAHESHU R JUNAKER , YAMAGUCHI EIICHI , UESUGI SUNAO
IPC分类号： G02F1/35
摘要： PROBLEM TO BE SOLVED: To enable the compression of an optical pulse even when the intensity of incident pulse light is high, to simplify an optical system as well and to easily perform light compression by using a linear diatomic molecular material. SOLUTION: This device is composed of a microcapillary 1 made of metal vessel having a window part as an optical waveguide when filling is gas or fluid, convergent system 3 for making incident pulse light 2 incident to the microcapillary 1, and optical system 4 for enlarging an optical pulse from the microcapillary 1. The compressed optical pulse is provided as emitted pulse light 5. In this case, the pulse light 2 is made incident to the linear diatomic molecular material especially such as hydrogen gas or heavy hydrogen gas, and optical pulse width is compressed by the peculiar characteristics of the linear diatomic molecular material. Thus, since the linear diatomic molecular material is used for a light compressing medium, even when the pulse light of high intensity is made incident, the optical pulse compression can be provided without light damage and extremely short pulse light can be provided.

5. 发明专利

JPH05188001A TIME-RESOLVED LIGHT EMISSION MEASURING DEVICE 失效
公开(公告)号：JPH05188001A
公开(公告)日：1993-07-27
申请号：JP233592
申请日：1992-01-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MAHESHIYU AARU JIYUNAKAA , YAMAGUCHI EIICHI
IPC分类号： G01J1/02 , G01J1/04 , G01N21/64
摘要： PURPOSE:To obtain a time-resolved light emission measuring device where the time-resolution is higher than that of the conventional device, and which is inexpensive and highly stable. CONSTITUTION:The laser beam 6 is diffracted by 90 deg. by a grating 8, and as a result, the wave packet of the laser beam in a certain time has the time delay relative to the X-axis direction (in the direction where the laser beam 6 advances). On the other hand, the beam to be measured 7 is reflected by 90 deg. by a mirror 9, and has no time delay relative to the X-axis direction. These beams are made incident on a filter 12 through a cylindrical lens 10 and a non-linear optical element 11, and the beam having the energy which is proportional to the product between the intensity of the laser beam 6 and that of the beam to be measured 7 and is equal to the sum of the respective energy is emitted. That means that the time axis of the beam to be measured is converted to the space axis. Then, the beam is made incident on a photodetector 13 and the time axis of the beam to be measured is converted to the X-axis.

6. 发明专利

JPH0117250B2 失效
公开(公告)号：JPH0117250B2
公开(公告)日：1989-03-29
申请号：JP3738782
申请日：1982-03-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KOBAYASHI TAKESHI , YAMAGUCHI EIICHI , HIROTA YUKIHIRO
IPC分类号： H01L21/314 , H01L21/318

7. 发明专利

JPS58154245A MEASUREMENT OF INTERFACE LEVEL DENSITY BETWEEN SEMICONDUCTOR AND INSULATOR OF MIS SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58154245A
公开(公告)日：1983-09-13
申请号：JP3738982
申请日：1982-03-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI
IPC分类号： H01L21/66
摘要： PURPOSE:To accurately measure interface level density without relationship with dependency on temperature by applying an DC voltage between a semiconductor and metal and by obtaining interface level density between semiconductor and insulator using an equation containing capacitance after the time (t)hr from application of a DC voltage and the time (t). CONSTITUTION:An MIS semiconductor device U where a metal 3 is arranged on a semiconductor 1 through an insulator 2 is provided within a thermostatic oven 4 and a DC voltage which is enough for allowing formation of deep depletion layer into the semiconductor 1 from a voltage generator 5 through a capacitance meter 6 is applied between the semiconductor 1 and metal 3 of a device U. A capacitance C between the semiconductor 1 and metal 3 is measured after 7hr from application of voltage, the data of capacitance C and time (t) are supplied to a data processing circuit 8 through a digitalizing and memory circuit 7, an energy level E expressed by the equation including the time (t) is obtained by the circuit 8, and moreover an interface level density Ns expressed by the equation including the time (t) and capacitance C.

8. 发明专利

JPH0152909B2 失效
公开(公告)号：JPH0152909B2
公开(公告)日：1989-11-10
申请号：JP2292180
申请日：1980-02-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , KOBAYASHI TAKESHI
IPC分类号： H01L31/10 , H01L31/0264 , H01L31/09

9. 发明专利

JPS63305561A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63305561A
公开(公告)日：1988-12-13
申请号：JP14115887
申请日：1987-06-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , OKAMURA MASAMICHI
IPC分类号： H01L29/78 , H01L29/43
摘要： PURPOSE:To provide a semiconductor field effect transistor having excellent interface characteristics, by arranging, a II-VI elements semiconductor containing ZnSe1-xTex or Zns1-xTex on the surface of InP or InAs, which performs lattice- matching with said semiconductor. CONSTITUTION:Silicon (Si ) ions are selectively implanted in the surface of a semi-insulating InP substrate 1. The substrate is then annealed within the atmosphere of PH3 with a infrared ray lamp so that n type source region 2 and drain region 3 are formed. The surface is then etched in order to remove the surface layer damaged by the heat treatment. A ZnSe1-xTex crystal layer 4 is formed by the organic metal chemical vapor phase deposition using starting materials of Zn(C2H5)2, Te(C2H5)2 and H2Se. The parts of the ZnSe1-xTex located on the source region 2 and the drain region 3 are removed and a source electrode 5, a drain electrode 6 and a gate electrode 7 are formed. According to this method, an interface having excellent characteristics can be provided and, hence, high electron mobility and stable operation of the device can be obtained.

10. 发明专利

JPS63252313A FORMING METHOD FOR SUPERCONDUCTIVE THIN FILM 失效
公开(公告)号：JPS63252313A
公开(公告)日：1988-10-19
申请号：JP8626787
申请日：1987-04-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , FURUKAWA YOSHITAKA , MIKAMI OSAMU , OKAMURA MASAMICHI , HIROTA YUKIHIRO
IPC分类号： H01L39/24 , C23C16/40 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/12
摘要： PURPOSE:To enable the manufacturing of a superconductive thin film, which is composed mainly of Bax[M]yCuOz, by a vapor growth method, by forming a superconductive thin film, which is composed mainly of Ba [M] CuO (where [M] is Y, or one or more of elements selected from lanthanide (Ln)), on a substrate which is disposed in a specific reaction region. CONSTITUTION:Copper halide, barium halide, lanthanide halide or yttrium halide, are de-halogenated by the use of a hydrogen gas. Further, a reaction to carbon dioxide is used to form a thin film of Bax[M]yCuOz (where [M] is Y, or one or more of elements selected from Ln) on the substrate. When the supply amount of a source gas and the temperature in reaction are changed, composition of a superconductive thin film can be controlled with good repetition. The superconductive thin film can be thus formed by a vapor phase reaction without providing a high-energy interface barrier on the substrate.

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